Datasheet N1263JK160, N1263JK180 Datasheet (Westcode Semiconductors)

Wespack Phase Control Thyristor

Types N1263JK160 to N1263JK180

Development Type No.: NX159JK160-180

Absolute Maximum Ratings

Date:- 9th September, 2014

Data Sheet Issue:- 3

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1600-1800 V Non-repetitive peak off-state voltage, (note 1) 1600-1800 V Repetitive peak reverse voltage, (note 1) 1600-1800 V Non-repetitive peak reverse voltage, (note 1) 1700-1900 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)M

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=60%V I2t

(di/dt)crCritical rate of rise of on-state current (note 6)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T

=25°C, (note 4) 2145 A

sink

Peak non-repetitive surge tp=10ms, Vrm=60%V

=55°C, (note 2) 1263 A

sink

=85°C, (note 2) 860 A

sink

=85°C, (note 3) 453 A

sink

=25°C, (note 2) 2504 A

sink

, (note 5) 15.0 kA

RRM

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

, (note 5) 1.13×10

RRM

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

(continuous, 50Hz) 100 (repetitive, 50Hz, 60s) 200

(non-repetitive) 400 Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, ITM=2000A, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

16.5 kA

1.36×10

6

A2s A2s

A/µs

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 1 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rr

t

rr

t

q

Maximum peak on-state voltage - - 1.59 ITM=1700A V Maximum peak on-state voltage - - 2.25 ITM=3700A V Threshold voltage - - 1.015 V Slope resistance - - 0.332

, linear ramp, gate o/c

DRM

Peak off-state current - - 100 Rated V Peak reverse current - - 100 Rated V Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300 Gate non-trigger voltage

- - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA mA

mA

V Holding current - - 1000 Tj=25°C mA Gate-controlled turn-on delay time - 0.5 1.5 µs Turn-on time - 1.0 2.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, IT=1000A, di/dt=10A/µs,

DRM

µs Recovered charge - 1700 - µC Recovered charge, 50% Chord - 1050 1350 µC Reverse recovery current - 100 - A Reverse recovery time, 50% Chord - 21 -

- 150 -

Turn-off time

- 250 -

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

- - 0.0270 Double side cooled K/W

R

thJK

Thermal resistance, junction to heatsink

- - 0.0469 Anode side cooled K/W

- - 0.0636 Cathode side cooled K/W F Mounting force 10 - 20 Note 2. kN W

t

Weight - 135 - g

Notes:-

1) Unless otherwise indicated T

2)

For other clamp forces, please consult factory.

=125°C.

j

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 2 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

D

DC V

R

16 1600 1700 1040 18 1800 1900 1150

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 3 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

∆

(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2

4

I

=

AV

Where V

R

th

=1.015V, rT=0.332mΩ,

T0

= Supplementary thermal impedance, see table below and

00

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

and:

W

AV

=

R

T

th

max

−=∆

TTT

Kj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.0369 0.0348 0.0329 0.0314 0.0299 0.0277 0.0270

Square wave Cathode Side Cooled 0.0740 0.0716 0.0695 0.0677 0.0667 0.0641 0.0636

Sine wave Double Side Cooled 0.0350 0.0330 0.0315 0.0300 0.0278

Sine wave Cathode Side Cooled 0.0719 0.0696 0.0679 0.0668 0.0643

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.46 2.45 2 1.73 1.41 1.15 1

Sine wave 3.98 2.78 2.22 1.88 1.57

8.2 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V to that plotted.

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 4 of 11 September, 2014

agree with the true device characteristic over a current range, which is limited

T

25°C Coefficients 125°C Coefficients

A 1.125034479 A 0.515189879 B -0.03145424 B 0.06949785 C 1.70934×10 D 9.362494×10

-4

-3

C 2.83136×10 D 1.856071×10

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

-3

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

8.3 D.C. Thermal Impedance Calculation

−

=

np

⎛ ⎜

∑

=

p

1

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds. r

= Thermal resistance at time t.

t

r

= Amplitude of pth term.

p

= Time Constant of rth term.

τ

p

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

p

9.0 Reverse recovery ratings (i) Q

is based on 50% Irm chord as shown in Fig. 1

ra

1 2 3 4

0.01628776 5.61118×10

0.2858404 0.09388713 0.02816524 3.592634×10

D.C. Cathode Side Cooled

1

0.04742413 0.01200315 2.629734×10

1.793815 0.1311505 0.01493408 2.829606×10

2 3 4

1

pt

⎜ ⎝

-3

t

τ

p

err

−⋅=

2.647435×10

⎞ ⎟

⎟ ⎠

-3

2.309156×10

1.66852×10

-3

Fig. 1

is based on a 150µs integration time i.e.

(ii) Q

rr

=

(iii)

FactorK =

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 5 of 11 September, 2014

t

1

t

2

150

s

µ

dtiQ

.

rrrr

∫

0

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

A

Curves

Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance

0.1

N1263JK160-180

0.01

Issue 3

KSC 0.0636K/W

SC 0.0469K/W

DSC 0.0270K/W

(A)

TM

10000

N1263JK160-180

Issue 3

Tj = 25°C

Tj = 125°C

1000

Instantaneous On-state current - I

100

00.511.522.533.54

Instantaneous On-state voltage - V

(V)

TM

Figure 3 – Gate Characteristics – Trigger limits

7

N1263JK160-180

Issue 3

Tj=25°C

6

(V)

GT

Gate Trigger Voltage - V

5

4

3

2

IGT, V

Max VG dc

GT

0.001

Thermal impedance (K/W)

0.0001

0.00001

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Figure 4 – Gate Characteristics – Power Curves

20

N1263JK160-180

Issue 3

Tj=25°C

18

16

Max VG dc

14

(V)

GT

12

10

Time (s)

8

Gate Trigger Voltage - V

6

PG Max 30W dc

25°C

-10°C

1

IGD, V

GD

0

0 0.1 0.2 0.3 0.4 0.5 0.6

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 6 of 11 September, 2014

125°C

Gate Trigger Current - I

-40°C

Min VG dc

(A)

GT

4

2

0

02468

PG 4W dc

Gate Trigger Current - I

Min VG dc

(A)

GT

10

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Figure 5 – Total Recovered Charge, Q

10000

N1263JK160-180

Issue 3

Tj=125°C

(µC)

rr

2000A 1500A

1000A

500A

Figure 6 – Recovered Charge, Qra (50% chord)

10000

N1263JK160-180

Issue 3

Tj=125°C

2000A 1500A

1000A

(µC)

ra

1000

500A

Recovered charge - Q

Recovered charge, 50% chord - Q

1000

1 10 100 1000

di/dt (A/µs)

Figure 7 – Peak Reverse Recovery Current, I

1000

N1263JK160-180

Issue 3

Tj=125°C

(A)

rm

100

Reverse recovery current - I

2000A 1000A 1500A 500A

100

1 10 100 1000

Figure 8 – Maximum Recovery Time, t

rm

100

(µs)

rr

10

Reverse recovery time, 50% chord - t

di/dt (A/µs)

(50% chord)

rr

N1263JK160-180

Issue 3

Tj=125°C

2000A 1500A 1000A 500A

10

1 10 100 1000

di/dt (A/µs)

1

1 10 100 1000

di/dt (A/µs)

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 7 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

4000

N1263JK160-180

3500

3000

2500

2000

Issue 3

90°

60°

30°

180°

120°

Figure 10 – On-state current vs. Heatsink temperature – Double Side Cooled (Sine wave)

140

120

100

80

N1263JK160-180

Issue 3

60

1500

Maximum forward dissipation (W)

1000

40

Maximum permissable heatsink temperature (°C)

500

0

0 500 1000 1500 2000

Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

4000

N1263JK160-180

3500

3000

2500

2000

1500

Maximum forward dissipation (W)

1000

Issue 3

180°

120°

90°

60°

30°

270°

d.c.

20

0

0 500 1000 1500 2000

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

140

120

100

Mean forward current (A) (Whole cycle averaged)

80

30° 60° 90° 120° 180°

N1263JK160-180

Issue 3

60

40

Maximum permissible heatsink temperature (°C)

500

0

0 500 1000 1500 2000 2500

Mean Forward Current (A) (Whole Cycle Averaged)

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 8 of 11 September, 2014

20

0

0 500 1000 1500 2000 2500

Mean Forward Current (A) (Whole Cycle Averaged)

30° 60° 90° 120 180° d.c.270°

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Figure 13 – On-state current vs. Power dissipation – Cathode Side Cooled (Sine wave)

1800

N1263JK160-180

Issue 3

Figure 14 – On-state current vs. Heatsink temperature – Cathode Side Cooled (Sine wave)

140

N1263JK160-180

Issue 3

1600

90°

60°

1400

1200

1000

800

600

Maximum forward dissipation (W)

400

200

0

0 200 400 600 800 1000

Mean forward current (A) (Whole cycle averaged)

30°

180°

120°

Figure 15 – On-state current vs. Power dissipation – Cathode Side Cooled (Square wave)

1800

N1263JK160-180

Issue 3

1600

1400

1200

30°

60°

90°

120°

180°

270°

d.c.

120

100

80

60

40

Maximum permissable heatsink temperature (°C)

20

0

0 200 400 600 800 1000

Figure 16 – On-state current vs. Heatsink temperature – Cathode Side Cooled (Square wave)

Mean forward current (A) (Whole cycle averaged)

140

120

100

30° 60° 90° 120° 180°

N1263JK160-180

Issue 3

1000

800

600

Maximum forward dissipation (W)

400

200

0

0 200 400 600 800 1000 1200

Mean Forward Current (A) (Whole Cycle Averaged)

80

60

40

Maximum permissible heatsink temperature (°C)

20

0

0 200 400 600 800 1000 1200

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90° 120° 180° d.c.270°

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 9 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Figure 17 – Maximum surge and I2t Ratings

100000

10000

Total peak half sine surge current (A)

1000

135101 5 10 50 100

Duration of surge (ms)

I2t: V

RRM

≤10V

I

Tj (initial) = 125°C

N1263JK160-180

Duration of surge (cycles @ 50Hz)

I2t: 60% V

: V

TSM

I

: 60% V

TSM

Issue 3

RRM

≤10V

RRM

1.00E+07

1.00E+06

1.00E+05

s)

2

t (A

2

Maximum I

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 10 of 11 September, 2014

Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180

Outline Drawing & Ordering Information

ORDERING INFORMATION (Please quote 10 digit code as below)

N1263 JK

Fixed

Type Code

Order code: N1263JK180 – 1800V V

IXYS Semiconductor GmbH

Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627

marcom@ixys.de

E-mail:

IXYS Corporation

3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670

sales@ixys.net

E-mail:

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

DRM

Fixed

outline code

, V

, 14mm clamp height capsule.

RRM

www.ixysuk.com

www.ixys.com



Voltage code

/100

V

DRM

16-18

E-mail:

101A361

0

Fixed turn-off

time code

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

IXYS UK Westcode Ltd

Tel: +44 (0)1249 444524

Fax: +44 (0)1249 659448

sales@ixysuk.com

E-mail:

IXYS Long Beach

2500 Mira Mar Ave, Long Beach

IXYS Long Beach, Inc

CA 90815

Tel: +1 (562) 296 6584

Fax: +1 (562) 296 6585

service@ixyslongbeach.com

Data Sheet. Types N1263JK160 to N1263JK180 Issue 2 Page 11 of 11 September, 2014

Datasheet N1263JK160, N1263JK180 Datasheet (Westcode Semiconductors)

Specifications and Main Features

Frequently Asked Questions

User Manual

Absolute Maximum Ratings

Characteristics

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

8.3 D.C. Thermal Impedance Calculation

9.0 Reverse recovery ratings (i) Q

Curves

Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance

Figure 3 – Gate Characteristics – Trigger limits

Figure 4 – Gate Characteristics – Power Curves

Figure 6 – Recovered Charge, Qra (50% chord)

Figure 17 – Maximum surge and I2t Ratings

Outline Drawing & Ordering Information