Datasheet N1159NC380, N1159NC420 Datasheet (Westcode Semiconductors)

Page 1
Phase Control Thyristor
Types N1159NC380 to N1159NC420

Absolute Maximum Ratings

Date:- 9 Apr, 2003
Data Sheet Issue:- 1
Old Type No.: N500CH30-42
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 3800-4200 V
Non-repetitive peak off-state voltage, (note 1) 3800-4200 V
Repetitive peak reverse voltage, (note 1) 3800-4200 V
Non-repetitive peak reverse voltage, (note 1) 3900-4300 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
I
t capacity for fusing tp=10ms, V
Critical rate of rise of on-state current (repetitive), (Note 6) 150 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
sink
=25°C, (note 4)
sink
rm
=55°C, (note 2)
sink
=85°C, (note 2)
sink
=85°C, (note 3)
sink
=25°C, (note 2)
RRM
10V, (note 5)
rm
, (note 5) 1.05×10
RRM
10V, (note 5)
LIMITS
LIMITS
UNITS
UNITS
1159 A
809 A
501 A
2268 A
2015 A
, (note 5) 14.5 kA
16.1 kA
1.30×10
6
6
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 1 of 11 April, 2003
, IFG=2A, t
DRM
0.5µs, T
r
case
=125°C.
Page 2
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Characteristics

Phase Control Thyristor Types N1159NC380 to N1159NC420
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 2.15 ITM=1830A V
Maximum peak on-state voltage - - 3.08 ITM=3480A V
Threshold voltage - - 1.10 V
Slope resistance - - 0.574
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.6 1.5 µs
Turn-on time - 1.3 3.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 4700 - µC
Recovered charge, 50% Chord - 2000 2200 µC
Reverse recovery current - 130 - A
I
=1000A, tp=1000µs, di/dt=10A/µs,
TM
V
=50V
r
Reverse recovery time - 30 -
ITM=1000A, tp=1000µs, di/dt=10A/µs, V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=10A/µs, V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
- 700 -
- 1000 -
- - 0.022 Double side cooled K/W
- - 0.044 Single side cooled K/W
(Note 1)
, linear ramp, gate o/c
DRM
, IT=1500A, di/dt=10A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 2 of 11 April, 2003
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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Phase Control Thyristor Types N1159NC380 to N1159NC420
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
38 3800 3900 1950 40 4000 4100 2000 42 4200 4300 2040

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn­on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT

8.0 Computer Modelling Parameters

Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 3 of 11 April, 2003
Page 4
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8.1 Device Dissipation Calculations

I
AV
Where V0=1.10V, rs=0.574m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
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2
4
=
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
00
2
rff
Ω,
++
WrffVV
AVs
and:
s
Supplementary Thermal Impedance
0.0312 0.0285 0.0267 0.0255 0.0240 0.0228 0.0220
0.0543 0.0513 0.0496 0.0484 0.0469 0.0455 0.0440
0.0256 0.0246 0.0239 0.0233 0.022
0.0509 0.0482 0.0471 0.0463 0.044
Form Factors
Phase Control Thyristor Types N1159NC380 to N1159NC420
T
AV
=
R
max
th
=
TTT
Hsj
W

8.2 Calculating VT using ABCD coefficients

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V that plotted.
given below:
T
T
A
B
C
D
vs. VT, on page 6 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
in
T
()
ln
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients 125°C Coefficients
0.1427085
0.2382484
6.071424×10
-0.0256394
A
B
-4
C
D
0.3139796
0.1669113
6.282724×10
-0.0132676
+++=
IDICIBAV
TTTT
-4
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 4 of 11 April, 2003
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p
p
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8.3 D.C. Thermal Impedance Calculation

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=
=
p
Phase Control Thyristor Types N1159NC380 to N1159NC420
np
 
1
pt
1
t
τ
p
=
err
 
Where
The coefficients for this device are shown in the tables below:
Term
r
τ
Term
r
τ

9.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1
p = 1
t = Duration of heating pulse in seconds. r
= Thermal resistance at time t.
t
= Amplitude of pth term.
r
τ
= Time Constant of rth term.
p
p
p
0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10
p
n, n
to
0.01249139 6.316833×10
0.8840810 0.1215195 0.03400152 6.742908×10
123456
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
is the number of terms in the series and:
D.C. Double Side Cooled
12345
-3
D.C. Single Side Cooled
1.850855×10
-3
1.922045×10
-3
-3
6.135330×10
1.326292×10
-4
-3
-3
-3
Fig. 1
is based on a 150µs integration time i.e.
(ii) Q
rr
(iii)
FactorK
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 5 of 11 April, 2003
=
150
µ
s
dtiQ
.
rrrr
0
t
1
=
t
2
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Phase Control Thyristor Types N1159NC380 to N1159NC420

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

0.1
N1159NC380-420
0.01
Issue 1
(A)
TM
10000
N1159NC380-420
Issue 1
Tj = 125°CTj = 25°C
SSC
0.044K/W
DSC
0.022K/W
1000
Instantaneous On-state current - I
100
012345
Instantaneous On-state voltage - V
(V)
TM
0.001
Transient thermal impedance (K/W)
0.0001
0.00001 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

9
N1159NC380-420
Issue 1
Tj=25°C
8
7
6
Max VG dc
30
N1159NC380-420
Tj=25°C
25
20
Issue 1
Max VG dc
(V)
G
5
4
Gate Voltage - V
3
2
1
IGD, V
GD
0
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 6 of 11 April, 2003
IGT, V
GT
25°C
-10°C
125°C
0 0.2 0.4 0.6 0.8 1
Gate Current - I
-40°C
(A)
G
Min VG dc
(V)
G
15
Gate Voltage - V
10
5
PG 2W dc
0
0246810
Gate Current - I
PG Max 30W dc
(A)
G
Min VG dc
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Phase Control Thyristor Types N1159NC380 to N1159NC420
Figure 5 - Total recovered charge, Q
100000
(µC)
rr
10000
Recovered charge - Q
1000
1 10 100 1000
di/dt (A/µs)
rr
N1159NC380-420
Issue 1
Tj=125°C
2000A 1500A 1000A
500A

Figure 6 - Recovered charge, Qra (50% chord)

10000
, 50% chord (µC)
ra
Recovered charge - Q
1000
1 10 100 1000
di/dt (A/µs)
N1159NC380-420
Issue 1
Tj=125°C
2000A 1500A
1000A
500A
Figure 7 - Peak reverse recovery current, I
1000
N1159NC380-420
Issue 1
Tj=125°C
(A)
rm
100
Reverse recovery current - I
10
1 10 100 1000
di/dt (A/µs)
2000A 1500A 1000A 500A
rm

Figure 8 - Maximum recovery time, trr (50% chord)

100
(µs)
rr
10
Reverse recovery time (50% chord) - t
1
1 10 100 1000
di/dt (A/µs)
N1159NC380-420
Issue 1
Tj=125°C
2000A 1500A 1000A 500A
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 7 of 11 April, 2003
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Phase Control Thyristor Types N1159NC380 to N1159NC420

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

5000
N1159NC380-420
Issue 1
4500
4000
3500
3000
2500
2000
Maximum forward dissipation (W)
1500
1000
500
30°
60°
90°
180°
120°

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

150
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
30° 60° 90° 120° 180°
N1159NC380-420
Issue 1
0
0 500 1000 1500
Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

5000
N1159NC380-420
Issue 1
4500
4000
3500
3000
2500
2000
Maximum forward dissipation (W)
1500
1000
d.c. 270° 180° 120° 90° 60° 30°
0
0 500 1000 1500
Mean forward curren t (A) (Whole cycle averaged)

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

150
125
100
75
50
Maximum permissible heatsink temperature (°C)
25
N1159NC380-420
Issue 1
30° 60° 90° 120° 180° 270° d.c.
500
0
0 500 1000 1500 2000 2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 8 of 11 April, 2003
0
0 500 1000 1500 2000 2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Phase Control Thyristor Types N1159NC380 to N1159NC420

Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

2500
N1159NC380-420
Issue 1
2000
1500
1000
Maximum forward dissipation (W)
500
30°
60°
90°
180°
120°

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

150
N1159NC380-420
Issue 1
125
100
75
50
Maximum permissable heatsink temperature (°C)
25
180°30° 60° 90° 120°
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

2500
N1159NC380-420
Issue 1
2000
1500
1000
Maximum forward dissipation (W)
500
d.c. 270° 180° 120° 90° 60° 30°
0
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

150
125
100
75
50
Maximum permissible heatsink temperature (°C)
25
N1159NC380-420
Issue 1
30° 60° 90° 120° 180° 270° d.c.
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 9 of 11 April, 2003
0
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Figure 17 - Maximum surge and I2t Ratings

Phase Control Thyristor Types N1159NC380 to N1159NC420
100000
N1159NC380-420
Issue 1
Tj (initial) = 125°C
10000
Total peak half sine surge current (A)
1000
13510 1 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: V
RRM
10V
I2t: 60% V
I
: V
TSM
I
: 60% V
TSM
RRM
RRM
10V
RRM
1.00E+07
1.00E+06
1.00E+05
s)
2
t (A
2
Maximum I
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 10 of 11 April, 2003
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Outline Drawing & Ordering Information

Phase Control Thyristor Types N1159NC380 to N1159NC420
ORDERING INFORMATION
N1159 NC
Fixed
Type Code
Order code: N1159NC400 – 4000V V
IXYS Semiconductor GmbH
Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.
outline code
, V
DRM
Fixed
, 27.7mm clamp height capsule.
RRM
www.westcode.com
www.ixys.net
(Please quote 10 digit code as below)



Voltage code
/100
V
DRM
14
0
Fixed turn-off
time code
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
© Westcode Semiconductors Ltd.
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1 Page 11 of 11 April, 2003
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