Datasheet N1114LC120, N1114LC180 Datasheet (Westcode Semiconductors)

Date:- 02 August 2012

Data Sheet Issue:- 2

Phase Control Thyristor

Types N1114LC120 to N1114LC180

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200-1800 V
Non-repetitive peak off-state voltage, (note 1) 1200-1800 V
Repetitive peak reverse voltage, (note 1) 1200-1800 V
Non-repetitive peak reverse voltage, (note 1) 1300-1900 V

OTHER RATINGS

I

Mean on-state current, T

T(AV)

I

Mean on-state current. T

T(AV)

I

Mean on-state current. T

T(AV)

I

Nominal RMS on-state current. T

T(RMS)

I

D.C. on-state current. T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, VRM=0.6V

TSM

I

TSM2

Peak non-repetitive surge t
I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

(di/dt)cr

2

I

t capacity for fusing tp=10ms, VRM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs

=55°C, (note 2) 1114 A

sink

=85°C, (note 2) 756 A

sink

=85°C, (note 3) 450 A

sink

=25°C, (note 2) 2214 A

sink

=25°C, (note 4) 1885 A

sink

, (note 5) 12.7 kA

RRM

=10ms, VRM≤10V, (note 5)

p

, (note 5) 806×103 A

RRM

Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
V

Peak reverse gate voltage 5 V

RGM

P

Mean forward gate power 4 W

G(AV)

PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T

Storage temperature range -40 to +150 °C

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

7) Rated V

, ITM=2000A, IFG=2A, tr≤0.5µs, T

DRM

, T

DRM

case

initial.

j

=125°C.

below 25°C.

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

UNITS

14.0 kA

2

980×10

3

A

2

s
s

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 1 of 10 August 2012

Phase Control Thyristor Types N1114LC120 to N1114LC180

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM

Maximum peak on-state
voltage

- - 1.59 ITM=1700A V

VT0 Threshold voltage - - 1.0 V
rT Slope resistance - - 0.349

(dv/dt)cr
I

DRM

I

RRM

Critical rate of rise of off-state
voltage

1000 - - VD=80% V

Peak off-state current - - 60 Rated V
Peak reverse current - - 60 Rated V

DRM

mA

DRM

mA

RRM

mΩ

V/µs

VGT Gate trigger voltage - - 3.0 Tj=25°C V
IGT Gate trigger current - - 300 Tj=25°C. VD=10V, IT=2A mA
IH Holding current - - 1000 Tj=25°C mA

R

thJK

Thermal resistance, junction to
heatsink

- - 0.032 Double side cooled K/W

- - 0.064 Single side cooled K/W
F Mounting force 10 - 20 kN
Wt Weight - 340 - g

Notes:-

1) Unless otherwise indicated T

=125°C.

j

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 2 of 10 August 2012

Phase Control Thyristor Types N1114LC120 to N1114LC180

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V
12 1200 1300 810
14 1400 1500 930
16 1600 1700 1040
18 1800 1900 1150

2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 3 of 10 August 2012

should remain flowing for the same duration as the anode current and have a

G

.

GT

Phase Control Thyristor Types N1114LC120 to N1114LC180

∆

(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2

4

=

I

AV

00

2

Where V

R

th

=1.0V,rT=0.349mΩ,

T0

= Supplementary thermal impedance, see table below.

2

⋅⋅⋅++−

WrffVV

AVTTT

2

⋅⋅

rff

T

W

and:

AV

=

R

T

th

max

TTT

−=∆

Hsj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.048 0.0436 0.0413 0.0388 0.036 0.0345 0.032
Square wave Single Side Cooled 0.079 0.0769 0.074 0.0716 0.0688 0.0665 0.064

Sine wave Double Side Cooled 0.0415 0.0394 0.0378 0.0355 0.032
Sine wave Single Side Cooled 0.0735 0.0718 0.07 0.0679 0.064

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.46 2.45 2 1.73 1.41 1.15 1

Sine wave 3.98 2.78 2.22 1.88 1.57

8.2 Calculating V

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 7 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

T

in

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
to that plotted.

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 4 of 10 August 2012

agree with the true device characteristic over a current range, which is limited

T

25°C Coefficients 125°C Coefficients

A 0.235424 A -0.18889721
B 0.2397938 B 0.2929696
C 4.894957×10-4 C 5.667005×10-4
D -0.03048948 D -0.03307492

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

Phase Control Thyristor Types N1114LC120 to N1114LC180

p

p

8.3 D.C. Thermal Impedance Calculation

−

=

np

⎛
⎜

∑

=

p

1

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

r

= Amplitude of pth term.

= Time Constant of r

τ

term.

th

1

pt

⎜
⎝

t

⎞

τ

p

⎟

err

−⋅=
⎟

⎠

D.C. Double Side Cooled

Term 1 2 3 4

rp

τ

p

Term 1 2 3 4 5

rp

τ

p

9.0 Reverse recovery ratings (i) Q

ra

0.03947164 0.01022837 8.789912×10-3 4.235162×10-3 1.907609×10-3

4.090062 1.078983 0.08530917 0.01128791 1.240861×10-3

is based on 50% Irm chord as shown in Fig. 1

0.01771901 4.240625×10-3 6.963806×10-3 3.043661×10-3

0.7085781 0.1435833 0.03615196 2.130842×10-3

D.C. Single Side Cooled

Fig. 1

is based on a 150µs integration time i.e.

(ii) Q

rr

=

(iii)

FactorK =

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 5 of 10 August 2012

1

t

2

t

150

s

µ

dtiQ

.

rrrr

∫

0

Phase Control Thyristor Types N1114LC120 to N1114LC180

Curves

Figure 1 - On-state current vs. Power dissipation ­Double Side Cooled (Sine wave)

3500

180°

3000

2500

60°

30°

120°

90°

Figure 2 - On-state current vs. Heatsink
temperature - Double Side Cooled (Sine wave)

140

120

100

N1114LS120-180

N1114LC120-180

Issue 2

Issue 1

2000

1500

Maximum forward dissipation (W)

1000

500

N1114LS120-180

0

0 500 1000 1500

Mean forward current (A) (Whole cycle averaged)

Issue 1

Figure 3 - On-state current vs. Power dissipation ­Double Side Cooled (Square wave)

3500

d.c.

3000

2500

120°

90°

60°

270°

180°

80

60

40

Maximum permissable heatsink temperature (°C)

20

0

0 500 1000 1500

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120° 180°

Figure 4 - On-state current vs. Heatsink
temperature - Double Side Cooled (Square wave)

140

120

100

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

30°

2000

1500

Maximum forward dissipation (W)

1000

500

N1114LC120-180

N1114LS120-180

Issue 2

0

0 500 1000 1500 2000

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 6 of 10 August 2012

Issue 1

80

60

40

Maximum permissible heatsink temperature (°C)

20

0

0 500 1000 1500 2000

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60°

120° 180° d.c.270°

90°

Phase Control Thyristor Types N1114LC120 to N1114LC180

Figure 5 - On-state current vs. Power dissipation ­Single Side Cooled (Sine wave)

1800

1600

1400

1200

30°

60°

90°

180°

120°

Figure 6 - On-state current vs. Heatsink
temperature - Single Side Cooled (Sine wave)

140

120

100

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

1000

800

600

Maximum forward dissipation (W)

400

200

N1114LC120-180

N1114LS120-180

Issue 2

0

0 200 400 600 800 1000

Mean forward current (A) (Whole cycle averaged)

Issue 1

Figure 7 - On-state current vs. Power dissipation ­Single Side Cooled (Square wave)

1800

1600

1400

1200

30°

60°

90°

120°

180°

d.c.

270°

80

60

40

Maximum permissable heatsink temperature (°C)

20

0

0 200 400 600 800 1000

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120° 180°

Figure 8 - On-state current vs. Heatsink
temperature - Single Side Cooled (Square wave)

140

120

100

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

1000

800

600

Maximum forward dissipation (W)

400

200

N1114LC120-180

N1114LS120-180

Issue 2

0

0 200 400 600 800 1000 1200

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 7 of 10 August 2012

Issue 1

80

60

40

Maximum permissible heatsink temperature (°C)

20

0

0 200 400 600 800 1000 1200

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90° 120° 180° d.c.270°

Phase Control Thyristor Types N1114LC120 to N1114LC180

Figure 9 - On-state characteristics of Limit device Figure 10 - Transient Thermal Impedance

0.1

SSC 0.064K/W

DSC 0.032K/W

(A)

TM

10000

Tj = 125°CTj = 25°C

1000

Instantaneous On-state current - I

N1114LC120-180

N1114LS120-180

Issue 2

100

0.511.522.533.544.5

Instantaneous On-state voltage - VTM (V)

Issue 1

Figure 11 - Gate Characteristics - Trigger Limits

7

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

Tj=25°C

6

(V)

GT

5

4

IGT, V

Max VG dc

GT

0.01

Thermal impedance (K/W)

N1114LC120-180

N1114LS120-180

Issue 2

0.001

0.001 0.01 0.1 1 10 100

Time (s)

Figure 12 - Gate Characteristics - Power Curves

20

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

Tj=25°C

18

16

Max VG dc

14

(V)

GT

12

10

Issue 1

3

Gate Trigger Voltage - V

2

25°C

-10°C

1

IGD, V

GD

0

0 0.1 0.2 0.3 0.4 0.5 0.6

125°C

Gate Trigger Current - I

-40°C

Min VG dc

(A)

GT

8

Gate Trigger Voltage - V

6

4

2

0

0246810

PG Max 30W dc

PG 4W dc

Gate Trigger Current - I

Min VG dc

(A)

GT

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 8 of 10 August 2012

2

Figure 13 – Maximum surge and I

Phase Control Thyristor Types N1114LC120 to N1114LC180

t Ratings

100000

N1114LC120-180

N1114LS120-180

Issue 2

Issue 1

Tj (initial) = 125°C

10000

Total peak half sine surge current (A)

1000

135101 5 10 50 100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

I2t: V

RRM

≤

10V

I2t: 60% V

I

: V

TSM

I

: 60% V

TSM

RRM

RRM

≤10V

RRM

1.00E+07

1.00E+06

1.00E+05

s)

2

t (A

2

Maximum I

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 9 of 10 August 2012

Outline Drawing & Ordering Information

Phase Control Thyristor Types N1114LC120 to N1114LC180

101A216

ORDERING INFORMATION (Please quote 10 digit code as below)

N1114 LC

Fixed

Type Code

Typical order code : N1114LC140 – 1400V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.

Fixed

Outline Code

, V

DRM

, 1000V/µs dv/dt, 27mm clamp height capsule.

RRM

www.ixysuk.com

www.ixys.com

♦ ♦ 0

Voltage Code

12-18

Fixed turn-off

time code

IXYS UK Westcode Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

IXYS Long Beach

IXYS Long Beach, Inc

2500 Mira Mar Ave, Long Beach

CA 90815

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© IXYS UK Westcode Ltd.

Data Sheet. Types N1114LC120 to N1114LC180 Issue 2 Page 10 of 10 August 2012