Page 1
MXTA42
NPN Plastic-Encapsulate Transistor
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
( TA=25 C unless otherwise noted)
Symbol Max Unit
(1)
T
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
R
JA
θ
J,Tstg
Value
300
300
5.0
500
500
4.0
250
-55 to +150
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
mW/ C
Unit
Vdc
Vdc
Vdc
mAdc
mW
C/W
C
Device Marking
MXTA42=A42
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, I =0)
1.FR-5=1.0 x 0.75 x 0.062 in.
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
300
300
5.0
-
-
-
-
-
0.25
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
W E I T R O N
h t t p : / / w w w . w e i t r o n . c o m . t w
Page 2
MXTA42
ELECTRICAL CHARACTERISTICS (T
Characteristics
=25 C unless otherwise noted) (Countinued)
A
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC= 1 mAdc, V
(IC= 10 mAdc, V
(IC=30 mAdc, V
Collector-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
Base-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
Transition Frequency
(V =20 Vdc, I =10 mAdc, f=30MHz)
CE
CE=10 Vdc
CE=10 Vdc
CE=10 Vdc
C
Classification of h
)
)
)
FE(2)
h
FE
h
FE
h
FE
V
CE(sat)
V
BE(sat)
f
T
(1)
(2)
(3)
60
80
75
-
-
50
Rank A B1 B2 C
Max
250
0.2
0.9
-
UnitMin
-
-
-
Vdc
Vdc
MHz
Range
80-100 100-150 150-200 200-250
WEITRON
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Page 3
MXTA42
120
WE ITR ON
Typical Characteristics
100
80
60
40
hFE, DC CURRENT GAIN
20
0
0.1 1.0 10 100
Tj=+125 C
25 C
-55 C
I , COLLECTOR CURRENT (mA)
C
FIG. 1 DC Current Gain
1.4
V
1.2
1.0
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
00
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
CE(sat)@25 C, ICIB = 10
V
CE(sat)@125 C, ICIB =10
V
CE(sat)@ -55 C, ICIB=10
V
BE(sat)@25 C, ICIB = 10
V
BE(sat)@125 C, ICIB =10
V
BE(sat)@ -55 C, ICIB =10
V
BE(on)@25 C, VCE = 10V
V
BE(on)@125 C, VCE = 10V
V
BE(on)@-55 C, VCE = 10V
FIG.2 "On"Voltages
WEITRON
http://www.weitron.com.tw
80
70
60
50
40
30
20
T
f , CURRENT-GAIN-BANDWIDTH (MHz)
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mA)
C
Tj=25 C
VEC=20V
f=20MHz
FIG.3 Current-Gain-Bandwidth
Page 4
MXTA42
WE ITR ON
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
WEITRON
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