Datasheet MX29LV800TMC-90, MX29LV800TMI-70, MX29LV800TMI-90, MX29LV800TTC-70, MX29LV800TTC-70R Datasheet (MXIC)

FEA TURES

PRELIMINARY

MX29LV800T/B

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE

3V ONLY FLASH MEMORY

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program
operation

• Fast access time: 70/90ns

• Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with
Erase Suspend capability.

- Automatically program and verify data at specified
address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and
erase operation completion.

• Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program or
erase operation completion.

• Sector protection

- Hardware method to disable any combination of
sectors from program or erase operations

- Tempoary sector unprotect allows code changes in
previously locked sectors.

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-pin CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power
supply Flash

GENERAL DESCRIPTION

The MX29LV800T/B is a 8-mega bit Flash memory or­ganized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV800T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.

The standard MX29L V800T/B off ers access time as fast
as 70ns, allowing operation of high-speed microproces­sors without wait states. To eliminate bus contention,
the MX29L V800T/B has separate chip enab le (CE) and
output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800T/B uses a command register to manage
this functionality . The command register allo ws for 100%

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TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi­mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents
even after 100,000 erase and prog ram cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy­cling. The MX29LV800T/B uses a 2.7V~3.6V VCC sup­ply to perform the High Reliability Erase and auto Pro­gram/Erase algorithms.

The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro­tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.

1

MX29LV800T/B

PIN CONFIGURATIONS

44 SOP(500 mil)

44

RY/BY

A18
A17

CE

GND

OE
Q0
Q8
Q1
Q9
Q2

Q10

Q3

Q11

2
3
4

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12
13
14

MX29LV800T/B

15
16
17
18
19
20
21
22

48 TSOP (Standard Type) (12mm x 20mm)

A15
A14
A13
A12
A11
A10

A9

A8
NC
NC

WE

RESET

NC
NC

RY/BY

A18
A17

A7

A6

A5

A4

A3

A2

A1

RESET

43

WE

42

A8

41

A9

40

A10

39

A11

38

A12

37

A13

36

A14

35

A15

34

A16

33

BYTE

32

GND

31

Q15/A-1

30

Q7

29

Q14

28

Q6

27

Q13

26

Q5

25

Q12

24

Q4

23

VCC

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

MX29LV800T/B

PIN DESCRIPTION

SYMBOL PIN NAME

A0~A18 Address Input
Q0~Q14 Data Input/Output
Q15/A-1 Q15(Word mode)/LSB addr(Byte mode)
CE Chip Enable Input
WE Write Enable Input
BYTE Word/Byte Selction input
RESET Hardware Reset Pin
OE Output Enable Input
RY/BY Ready/Busy Output
VCC Power Supply Pin (2.7V~3.6V)
GND Ground Pin

48

A16

47

BYTE

46

GND

45

Q15/A-1

44

Q7

43

Q14

42

Q6

41

Q13

40

Q5

39

Q12

38

Q4

37

VCC

36

Q11

35

Q3

34

Q10

33

Q2

32

Q9

31

Q1

30

Q8

29

Q0

28

OE

27

GND

26

CE

25

A0

48-Ball CSP Ball Pitch = 0.8 mm, Top View, Balls Facing Do wn
(8mm x 9mm x 1.2mm for MX29LV800T/BXB and 6mm x 8mm x 1.3mm for MX29LV800T/BXE)

A BCDEFGH
6 A13 A12 A 14 A15 A16 BYTE Q15/A-1 GN D
5 A9 A8 A10 A11 Q7 Q14 Q13 Q6
4 WE RESET N C N C Q5 Q1 2 Vcc Q4
3 RY/BY N C A18 NC Q 2 Q10 Q1 1 Q3
2 A7 A17 A6 A5 Q0 Q8 Q9 Q1
1A3A4 A2A1A0CEOEGND

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BLOCK STRUCTURE
Table 1: MX29LV800T SECTOR ARCHITECTURE

Sector Sector Size Address range Sector Address

Byte Mode W ord Mode Byte Mode (x8) Wor d Mode (x16) A1 8 A1 7 A1 6 A1 5 A14 A 13 A1 2

SA0 64Kbytes 32Kwords 00000h-0FFFFh 00000h-07FFFh 0000XXX
SA1 64Kbytes 32Kwords 10000h-1FFFFh 08000h-0FFFFh 0001XX X
SA2 64Kbytes 32Kwords 20000h-2FFFFh 10000h-17FFFh 0010XXX
SA3 64Kbytes 32Kwords 30000h-3FFFFh 18000h-1FFFFh 0011XX X
SA4 64Kbytes 32Kwords 40000h-4FFFFh 20000h-27FFFh 0100XXX
SA5 64Kbytes 32Kwords 50000h-5FFFFh 28000h-2FFFFh 0101XX X
SA6 64Kbytes 32Kwords 60000h-6FFFFh 30000h-37FFFh 0110XXX
SA7 64Kbytes 32Kwords 70000h-7FFFFh 38000h-3FFFFh 0111XX X
SA8 64Kbytes 32Kwords 80000h-8FFFFh 40000h-47FFFh 1000XXX
SA9 64Kbytes 32Kwords 90000h-9FFFFh 48000h-4FFFFh 1001XX X
SA10 64Kbytes 32Kwords A0000h-AFFFFh 50000h-57FFFh 1010XXX
SA11 64Kbytes 32Kwords B0000h-BFFFFh 58000h-5FFFFh 1011XXX
SA12 64Kbytes 32Kwords C0000h-CFFFFh 60000h-67FFFh 1100XXX
SA13 64Kbytes 32Kwords D0000h-DFFFFh 68000h-6FFFFh 1101XXX
SA14 64Kbytes 32Kwords E0000h-EFFFFh 70000h-77FFFh 1110XXX
SA15 32Kbytes 16Kwords F0000h-F7FFFh 78000h-7BFFFh 11110XX
SA16 8Kbytes 4Kwords F8000h-F9FFFh 7C000h-7CFFFh 111110 0
SA17 8Kbytes 4Kwords FA000h-FBFFFh 7D000h-7DFFFh 111110 1
SA18 16Kbytes 8Kwords FC000h-FFFFFh 7E000h-7FFFFh 111111X

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

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Table 2: MX29LV800B SECTOR ARCHITECTURE

Sector Sector Size Address range Sector Address

Byte Mode W ord Mode Byte Mode (x8) Wor d Mode (x16) A1 8 A1 7 A1 6 A1 5 A14 A 13 A1 2

SA0 16Kbytes 8Kwords 00000h-03FFFh 00000h-01FFFh 000000X
SA1 8Kbytes 4Kwords 04000h-05FFFh 02000h-02FFFh 000001 0
SA2 8Kbytes 4Kwords 06000h-07FFFh 03000h-03FFFh 000001 1
SA3 32Kbytes 16Kwords 08000h-0FFFFh 04000h-07FFFh 00001XX
SA4 64Kbytes 32Kwords 10000h-1FFFFh 08000h-0FFFFh 0001XX X
SA5 64Kbytes 32Kwords 20000h-2FFFFh 10000h-17FFFh 0010XXX
SA6 64Kbytes 32Kwords 30000h-3FFFFh 18000h-1FFFFh 0011XX X
SA7 64Kbytes 32Kwords 40000h-4FFFFh 20000h-27FFFh 0100XXX
SA8 64Kbytes 32Kwords 50000h-5FFFFh 28000h-2FFFFh 0101XX X
SA9 64Kbytes 32Kwords 60000h-6FFFFh 30000h-37FFFh 0110XXX
SA10 64Kbytes 32Kwords 70000h-7FFFFh 38000h-3FFFFh 0111XX X
SA11 64Kbytes 32Kwords 80000h-8FFFFh 40000h-47FFFh 1000XX X
SA12 64Kbytes 32Kwords 90000h-9FFFFh 48000h-4FFFFh 1001XX X
SA13 64Kbytes 32Kwords A0000h-AFFFFh 50000h-57FFFh 1010XXX
SA14 64Kbytes 32Kwords B0000h-BFFFFh 58000h-5FFFFh 1011XXX
SA15 64Kbytes 32Kwords C0000h-CFFFFh 60000h-67FFFh 1100XXX
SA16 64Kbytes 32Kwords D0000h-DFFFFh 68000h-6FFFFh 1101XXX
SA17 64Kbytes 32Kwords E0000h-EFFFFh 70000h-77FFFh 1110XXX
SA18 64Kbytes 32Kwords F0000h-FFFFFh 78000h-7FFFFh 1111XXX

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

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BLOCK DIAGRAM

MX29LV800T/B

CE
OE

WE

RESET

A0-A18

CONTROL
INPUT

LOGIC

ADDRESS

LATCH

AND

BUFFER

PROGRAM/ERASE

HIGH VOLTAGE

X-DECODER

MX29L V800T/B

FLASH
ARRA Y

Y-DECODER

Y-PASS GATE

SENSE

AMPLIFIER

PGM

DATA

ARRAY

SOURCE

HV

HV

WRITE

STATE

MACHINE

(WSM)

STATE

REGISTER

COMMAND

DATA
DECODER

COMMAND

DATA LATCH

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Q0-Q15/A-1

PROGRAM

DATA LATCH

I/O BUFFER

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MX29LV800T/B

AUTOMATIC PROGRAMMING

The MX29L V800T/B is byte programmab le using the Au­tomatic Programming algorithm. The Automatic Pro­gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV800T/B is less than 10 sec­onds.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro­gram verification, and counts the number of sequences.
The device provides an unlock bypass mode with faster
programming. Only two write cycles are needed to pro­gram a word or byte, instead of f our . A status bit similar
to DATA polling and a status bit toggling between con­secutive read cycles, provide feedback to the user as
to the status of the programming operation. Refer to write
operation status, table 7, for more information on these
status bits.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan­dard microprocessor write timings. The device will auto­matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu­tive read cycles provides feedback to the user as to the
status of the erasing operation.

Register contents serve as inputs to an internal state­machine which controls the erase and programming cir­cuitry . During write cycles, the command register inter­nally latches address and data needed for the program­ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichev er hap­pens first.

MXIC's Flash technology combines years of EPROM
experience to produce the highest lev els of quality, reli­ability , and cost effectiv eness. The MX29LV800T/B elec­trically erases all bits simultaneously using Fowler­Nordheim tunneling. The bytes are prog rammed by us­ing the EPROM programming mechanism of hot elec­tron injection.

AUTOMATIC CHIP ERASE

The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
T ypical erasure at room temper ature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri­cal erase. The timing and v erification of electrical erase
are controlled internally within the device.

AUTOMATIC SECTOR ERASE

The MX29L V800T/B is sector(s) erasab le using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verifi­cation of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.

During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis­ter to respond to its full command set.

AUTOMATIC SELECT

The auto select mode provides manufacturer and de­vice identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the de­vice to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9 and other address pin A6, A1 and A0 as referring
to Table 3. In addition, to access the automatic select
codes in-system, the host can issue the automatic se-

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MX29LV800T/B

lect command through the command register without
requiring VID , as shown in tab le4.

T o v erify whether or not sector being protected, the sec­tor address must appear on the appropriate highest or­der address bit (see Table 1 and Table 2). The rest of
address bits, as shown in table3, are don't care. Once
all necessary bits have been set as required, the pro­gramming equipment may read the corresponding iden­tifier code on Q7~Q0.

T ABLE 3. MX29LV800T/B AUTO SELECT MODE OPERATION

A18 A11 A9 A8 A6 A5 A1 A0

Description Mode CE OE WE | | | | Q15~Q0

A12 A10 A7 A2

Read Silicon ID L L H X X VID X L X L L C2 H
Manfacturer Code
Read Silicon ID Word L L H X X VID X L X L H 22DAH
(Top Boot Block) Byte L L H X X VID X L X L H XXDAH
Device ID Word L L H X X VID X L X L H 225BH
(Bottom Boot Block) Byte L L H X X VID X L X L H XX5BH

XX01H

Sector Protection L L H SA X VID X L X H L (protected)
Verification XX00H

(unprotected)

NOTE:SA=Sector Address, X=Don't Care , L=Logic Low , H=Logic High

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MX29LV800T/B

T ABLE 4. MX29LV800T/B COMMAND DEFINITIONS

First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus

Command Bus Cycle Cycle Cycle Cycle Cycle Cycle

Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Reset 1 XXXH F0H
Read 1 RA RD
Read Silicon ID Word 4 555H AAH 2AAH 55H 555H 90H ADI DDI

Byte 4 AAAH AAH 555H 55H AAAH 90H ADI DDI
Sector Protect Word 4 555H AAH 2AAH 55H 555H 90H (SA) XX00H
Verify x02H XX01H

Byte 4 AAAH AAH 555H 55H AAAH 9 0H (SA) 00H

x04H 0 1 H

Porgram Word 4 555H AAH 2AAH 55H 555H A0H PA PD

Byte 4 AAAH AAH 555H 55H AAAH A0H PA PD
Chip Erase Word 6 555H AAH 2AAH 5 5H 555H 80H 555H AAH 2AAH 55H 555H 10H

Byte 6 AAAH AAH 555H 55H AAAH 8 0H AAAH AAH 555H 55H AAAH 10 H
Sector Erase Word 6 555H AAH 2AAH 5 5H 555H 80H 555H AAH 2AAH 55 H SA 30 H

Byte 6 AAAH AAH 555H 55H AAAH 8 0H AAAH AAH 555H 55H SA 30 H
Sector Erase Suspend 1 XXXH B 0H
Sector Erase Resume 1 XXXH 3 0H

Note:

1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.

2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.

3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or
555H to Address A10~A-1 in byte mode.

Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A18 in either state.

4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it
means the sector is still not being protected.

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COMMAND DEFINITIONS

MX29LV800T/B

Device operations are selected by writing specific ad­dress and data sequences into the command register.
Writing incorrect address and data values or writing them

sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the

Sector Erase operation is in progress.
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command

T ABLE 5. MX29LV800T/B BUS OPERA TION

ADDRESS Q8~Q15

DESCRIPTION CE O E WE A18 A10 A9 A 8 A6 A5 A1 A0 Q0~Q7 BYTE BYTE

A12 A11 A7 A2 =VIH =VIL

Read L L H AIN Dout Dout =High Z

DQ15=A-1
Write L H L AIN DIN(3) DIN
Reset X X X X High Z High Z High Z
Temproary sector unlock X X X AIN DIN DIN High Z
Output Disable L H H X High Z High Z High Z
Standby Vcc ± 0.3V X X X High Z High Z High Z
Sector Protect L H L SA X X X L X H L DIN X X
Sector Unprotect L H L X X X X H X H L D IN X X
Sector Protection Verify L L H SA X VID X L X H L CODE(5) X X

NOTES:

1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.

2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.

3. Refer to Table 4 for valid Data-In during a write operation.

4. X can be VIL or VIH.

5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.

6. A18~A12=Sector address for sector protect.

7.The sector protect and chip unprotect functions may also be implemented via programming equipment.

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MX29LV800T/B

REQUIREMENTS FOR READING ARRAY
DATA

To read array data from the outputs, the system must
drive the CE and OE pins to VIL. CE is the pow er control
and selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH.

The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory contect
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enab led for read access
until the command register contents are altered.

WRITE COMMANDS/COMMAND
SEQUENCES

T o program data to the de vice or erase sectors of memory
, the sysytem must drive WE and CE to VIL, and OE to
VIH.

The device features an Unlock Bypass mode to facilitate
faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a byte, instead of four. The "byte Program
Command Sequence" section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.

An erase operation can erase one sector , multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data."section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.

After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
reqister (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.

Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.

ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.

STANDBY MODE

When using both pins of CE and RESET, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
IF CE and RESET are held at VIH, but not within the
range of VCC ± 0.3V , the device will still be in the standb y
mode, but the standby current will be larger . During Auto
Algorithm operation, Vcc activ e current (Icc2) is required
even CE = "H" until the oper ation is complated. The de­vice can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.

OUTPUT DISABLE

With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.

RESET OPERATION

The RESET pin provides a hardware method of resetting
the device to reading arra y data. When the RESET pin is
driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET pluse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitated once the device is ready to accept another
command sequence, to ensure data integrity

Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL
but not within VSS±0.3V, the standby current will be
greater.

The RESET pin may be tied to system reset circuitry . A
system reset would that also reset the Flash memory,
enabling the system to read the boot-up firm-ware from

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MX29LV800T/B

the Flash memory .
If RESET is asserted during a program or erase

operation, the R Y/BY pin remains a "0" (b usy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
sysytem can thus monitor RY/BY to determine whether
the reset operation is complete. If RESET is asserted
when a program or erase operation is commpleted within
a time of tREADY (not during Embedded Algorithms).
The system can read data tRH after the RESET pin
returns to VIH.

Refer to the AC Characteristics tables for RESET
parameters and to Figure 22 for the timing diagram.

READ/RESET COMMAND

The read or reset operation is initiated by writing the
read/reset command sequence into the command reg­ister. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.

If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid com­mand must then be written to place the device in the
desired state.

SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS

Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed b y writing the
"set-up" command 80H. Two more "unlock" write cy­cles are then followed by the chip erase command 10H
or sector erase command 30H.

The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Au­tomatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to pro vide any
control or timing during these operations.

When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).

If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manu­facturer and device codes must be accessible while the
device resides in the target system. PROM program­mers typically access signature codes by raising A9 to
a high voltage(VID). Howev er, m ultiplexing high voltage
onto address lines is not generally desired system de­sign practice.

The MX29L V800T/B contains a Silicon-ID-Read opera­tion to supple traditional PROM programming methodol­ogy . The oper ation is initiated by writing the read silicon
ID command sequence into the command register. F ol­lowing the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H/00C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of DAH/22D AH for MX29LV800T, 5BH/225BH for
MX29LV800B.

P/N:PM0709

The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" at which time the device returns to the Read
mode, or the data on Q6 stops toggling for two consecu­tive read cycles at which time the device returns to the
Read mode.

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MX29LV800T/B

T ABLE 6. SILICON ID CODE

Pins A0 A 1 Q15~Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code(Hex)
Manufacture code Word VIL VIL 00H 1 1 0 0 0 0 1 0 00C2H

Byte VIL VIL X 1 1 0 0 0 0 1 0 C 2H
Device code Word VIH VIL 22 H 1 1 0 1 1 0 1 0 22DAH
for MX29LV800T Byte VIH VIL X 1 1 0 1 1 0 1 0 DAH
Device code Word VIH VIL 22 H 0 1 0 1 1 0 1 1 225BH
for MX29LV800B Byte VIH VIL X 0 1 0 1 1 0 1 1 5 BH
Sector Protection Word X VIH X 0 0 0 0 0 0 0 1 01H (Protected)
Verification Byte X VIH X 0 0 0 0 0 0 0 0 00H (Unprotected)

READING ARRAY DATA

The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read arra y data
after completing an Automatic Program or Automatic
Erase algorithm.

After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys­tem can read array data using the standard read tim­ings, except that if it reads at an address within erase­suspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system
able the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.

must issue the reset command to re-en-

RESET COMMAND

Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.

The reset command may be written between the se­quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.

The reset command may be written between the se­quence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once prog ramming begins ,how ever, the
device ignores reset commands until the operation is
complete.

The reset command may be written between the se­quence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command
data (also applies to SILICON ID READ during Erase
Suspend).

must be written to return to reading array

P/N:PM0709

If Q5 goes high during a program or erase operation,
writing the reset command returns the device to read­ing array data (also applies during Erase Suspend).

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MX29LV800T/B

SECTOR ERASE COMMANDS

The Automatic Sector Erase does not require the de­vice to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Au­tomatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will auto­matically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.

When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when either the data on Q7 is "1" at which time the de­vice returns to the Read mode, or the data on Q6 stops
toggling for two consecutive read cycles at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.

When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "un­lock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later , while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successiv e sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichev er
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer .) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.

ERASE SUSPEND

This command only has meaning while the state ma­chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend Com-

mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However , when the Erase Suspend com­mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready . At this time,
state machine only allows the command register to re­spond to Erase Resume, program data to , or read data
from any sector not selected for erasure.

The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro­gram operation is complete, the system can once again
read array data within non-suspended sectors.

ERASE RESUME

This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.

WORD/BYTE PROGRAM COMMAND SEQUENCE

The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 1 shows the address
and data requirements for the byte program command
sequence.

When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.

Any commands written to the device during the Em-

not

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MX29LV800T/B

bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operat ion. The Byte Prog ram command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.

Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".

WRITE OPERSTION STATUS

The device provides several bits to determine the sta­tus of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. T able 10 and the f ollowing subsections describe the
functions of these bits. Q7, R Y/BY, and DQ6 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.

this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sec­tors selected for erasure to read valid status information
on Q7.

After an erase command sequence is written, if all sec­tors selected for erasing are protected, Data P olling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.

When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchr onously with Q0-Q6 while Output En­able (OE) is asserted low.

RY/BY:Ready/Busy

Q7: Data Polling

The Data Polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or com­pleted, or whether the device is in Erase Suspend. Data
Polling is v alid after the rising edge of the final WE pulse
in the program or erase command sequence.

During the Automatic Program algorithm, the device out­puts on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to progr amming dur­ing Er ase Suspend. When the Automatic Program algo­rithm is complete, the device outputs the datum pro­grammed to Q7. The system must provide the progr am
address to read valid status information on Q7. If a pro­gram address falls within a protected sector, Data Poll­ing on Q7 is active for approximately 1 us, then the de­vice returns to reading array data.

During the Automatic Erase algorithm, Data Polling pro­duces a "0" on Q7. When the Automatic Erase algo­rithm is complete, or if the device enters the Erase Sus­pend mode, Data P olling produces a "1" on Q7. This is
analogous to the complement/true datum out-put de­scribed for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to

The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since R Y/BY
is an open-drain output, sever al RY/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.

If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.)If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.

T able 7 sho ws the outputs for R Y/BY during write opera­tion.

Q6:Toggle BIT I

Toggle Bit I on Q6 indicates whether an Automatic Pro­gram or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence(prior to the pro­gram or erase operation), and during the sector time-

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MX29LV800T/B

During an Automatic Program or Erase algorithm opera­tion, successive read cycles to any address cause Q6
to toggle. The system may use either OE or CE to con­trol the read cycles. When the operation is complete , Q6
stops toggling.

After an erase command sequence is written, if all sec­tors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.

The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase sus­pended. When the de vice is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. Ho wever, the system m ust also use Q2
to determine which sectors are erasing or erase-sus­pended. Alternatively, the system can use Q7.

If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program com­mand sequence is written, then returns to reading array
data.

Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algo­rithm is complete.

Table 7 shows the outputs for Toggle Bit I on Q6.

Q2:Toggle Bit II

The "T oggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively eraseing (that is,
the Automatic Erase alorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.

Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by com­parison, indicates whether the device is actively eras­ing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus , both status bits

are required for sectors and mode information. Refer to
Table 7 to compare outputs for Q2 and Q6.

Reading Toggle Bits Q6/ Q2

Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. T ypically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.

Howe v e r, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys­tem also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfuly completed the program or erase opera­tion. If it is still toggling, the device did not complete the
operation successfully, and the system must wr ite the
reset command to return to reading array data.

The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the sta­tus as described in the previous paragraph. Alterna­tively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.

Q5
Exceeded Timing Limits

Q5 will indicate if the program or erase time has ex­ceeded the specified limits(internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.

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MX29LV800T/B

If this time-out condition occurs during sector erase op­eration, it specifies that a particular sector is bad and it
may not be reused. Howe ver , other sectors are still func­tional and may be used for the program or erase opera­tion. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute prog ram or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.

If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com­bination of sectors are bad.

T able 7. WRITE OPERATION STA TUS

Status Q7 Q6 Q5 Q3 Q2 RY/BY

Byte Program in Auto Program Algorithm Q7 Toggle 0 N/A N o 0

If this time-out condition occurs during the byte program­ming operation, it specifies that the entire sector con­taining that byte is bad and this sector maynot be re­used, (other sectors are still functional and can be re­used).

The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.

(Note1) (Note2)

Toggle

Auto Erase Algorithm 0 Toggle 0 1 Toggle 0

Erase Suspend Read 1 N o 0 N/A Toggle 1

In Progress

Erase Suspended Mode Erase Suspend Read Data Data Data Data Data 1

Byte Program in Auto Program Algorithm Q7 Toggle 1 N/A N o 0

Exceeded
Time Limits Auto Erase Algorithm 0 Toggle 1 1 Toggle 0

Erase Suspend Program Q7 Toggle 1 N/A N/A 0

(Erase Suspended Sector) Toggle

(Non-Erase Suspended Sector)
Erase Suspend Program Q7 Toggle 0 N/A N/A 0

Toggle

Note:

1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.

2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.

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MX29LV800T/B

Q3
Sector Erase Timer

After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase com­mand sequence.

If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the com­mand has been accepted, the system software should
check the status of Q3 prior to and following each sub­sequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.

POWER SUPPLY DECOUPLING

In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected be­tween its VCC and GND .

POWER-UP SEQUENCE

The MX29L V800T/B po wers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.

TEMPORARY SECTOR UNPROTECT

This feature allows temporary unprotection of previously
protected sector to change data in-system. The T empo­rary Sector Unprotect mode is activated by setting the
RESET pin to VID(11.5V-12.5V). During this mode, for­merly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin,all the previously protected sectors are pro­tected again.

DATA PROTECTION

The MX29LV800T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically re­sets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful comple­tion of specific command sequences. The device also
incorporates several features to pre vent inadve rtent write
cycles resulting from VCC po wer-up and power-down tran­sition or system noise.

WRITE PULSE "GLITCH" PROTECTION

Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.

LOGICAL INHIBIT

Writing is inhibited by holding any one of OE = VIL, CE
= VIH or WE = VIH. T o initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.

SECTOR PROTECTION

The MX29LV800T/B features hardware sector protec­tion. This feature will disable both program and erase
operations for these sectors protected. To activate this
mode, the programming equipment must force VID on
address pin A9 and OE (suggest VID = 12V). Program­ming of the protection circuitry begins on the falling edge
of the WE pulse and is terminated on the rising edge.
Please refer to sector protect algorithm and waveform.

T o verify programming of the protection circuitry , the pro­gramming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
device output Q0 f or a protected sector . Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses,except for A1, are don't care.
Address locations with A1 = VIL are reserved to read
manufacturer and device codes.(Read Silicon ID)

It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Perf orming a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector .

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CHIP UNPROTECT

The MX29LV800T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotect mode.

To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.
Refer to chip unprotect algorithm and waveform for the
chip unprotect algorithm. The unprotection mechanism
begins on the falling edge of the WE pulse and is
terminated on the rising edge.

It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.

MX29LV800T/B

It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.

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MX29LV800T/B

ABSOLUTE MAXIMUM RATINGS

Storage T emperature

Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC

Ambient T emperature

with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC

V oltage with Respect to Ground

VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V

A9, OE, and

RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V

All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may over­shoot VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may ov ershoot to VCC +2.0 V for periods up to
20 ns.

2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During voltage transitions , A9, OE,
and RESET may ov ershoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input volt­age on pin A9 is +12.5 V which may overshoot to

14.0 V f or periods up to 20 ns.

3. No more than one output ma y be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.

OPERATING RATINGS

Commercial (C) Devices

Ambient Temperature (T

Industrial (I) Devices

Ambient Temperature (T

CC Supply Voltages

V

V

CC for regulated voltage range . . . . . +3.0 V to 3.6 V

V

CC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V

Operating ranges define those limits between which the
functionality of the device is guaranteed.

A ) . . . . . . . . . . . . 0°C to +70°C

A ) . . . . . . . . . . -4 0 °C to +85°C

Stresses above those listed under "Absolute Maximum
Rat-ings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those in­dicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maxi­mum rating conditions for extended periods may affect
device reliability.

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MX29LV800T/B

CAPACITANCE TA = 25oC, f = 1.0 MHz

SYMBOL PARAMETER MIN. TYP MAX. UNIT CONDITIONS

CIN1 Input Capacitance 8 pF VIN = 0V
CIN2 Control Pin Capacitance 1 2 pF VIN = 0V
COUT Output Capacitance 12 pF VOUT = 0V

READ OPERATION

Table 8. DC CHARACTERISTICS

Symbol PARAMETER MIN. TYP MAX. UNIT CONDITIONS

ILI Input Leakage Current ± 1 uA VIN = VSS to VCC
ILIT A9 Input Leakage Current 35 uA VCC=VCC max; A9=12.5V
ILO Output Leakage Current ± 1 uA V OUT = VSS to VCC, VCC=VCC max
ICC1 VCC Active Read Current 7 12 mA CE=VIL, OE=VIH @5MHz

ICC2 VCC Active write Current 1 5 30 mA CE=VIL, OE=VIH
ICC3 VCC Standby Current 0.2 5 u A CE; RESET=VCC ± 0.3V
ICC4 VCC Standby Current 0.2 5 u A RESET=VSS ± 0.3V

During Reset
ICC5 Automative sleep mode 0.2 5 u A VIH=VCC ± 0.3V;VIL=VSS ± 0.3V
VIL Input Low Voltage(Note 1) -0.5 0.8 V
VIH Input High Voltage 0.7xVCC VCC+ 0.3 V
VID Voltage for Automative

Select and Temporary 11.5 12.5 V VCC=3.3V

Sector Unprotect
VOL Output Low Voltage 0.45 V IOL = 4.0mA, VCC= VCC min
VOH1 Output High Voltage(TTL) 0.85xVCC IOH = -2mA, VCC=VCC min
VOH2 Output High Voltage VCC-0.4 IOH = -100uA, VCC min

(CMOS)
VLKO Low VCC Lock-out 2.3 2.5 V

Voltage

TA = -40oC to 85oC, VCC = 2.7V~3.6V

2 4 mA (Byte Mode) @1MHz
7 12 mA CE=VIL, OE=VIH @5MHz
2 4 mA (Word Mode) @1MHz

NOTES:

1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.

2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is ov er the specified maximum v alue, read operation cannot be guaranteed.

3.Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.

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AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V

Table 9. READ OPERATIONS

29LV800T/B-70(R) 29LV800T/B-90

SYMBOL PARAMETER MIN. MAX. MIN. MAX. UNIT CONDITIONS

tRC Read Cycle Time (Note 1) 70 90 ns
tACC Address to Output Delay 7 0 90 ns CE=OE=VIL
tCE CE to Output Delay 70 90 ns OE=VIL
tOE OE to Output Delay 30 35 ns CE=VIL
tDF OE High to Output Float (Note1) 0 25 0 3 0 ns CE=VIL
tOEH Output Enable Read 0 0 ns

Hold Time Toggle and Data Polling 10 1 0 n s

tOH Address to Output hold 0 0 ns CE=OE=VIL

TEST CONDITIONS:

• Input pulse levels: 0V/3.0V.

• Input rise and fall times is equal to or less than 5ns.

• Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV800T/B-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV800T/B-70 and 29LV800T/B­70R.

• Reference levels for measuring timing: 1.5V.

NOTE:

1. Not 100% tested.

2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.

3. 29L V800T/B-70R operates at VCC=3.0V~3.6V

P/N:PM0709

REV. 1.3, JAN. 24, 2002

21

SWITCHING TEST CIRCUITS

MX29LV800T/B

DEVICE UNDER

TEST

SWITCHING TEST WAVEFORMS

3.0V

0V

INPUT

CL

CL= 100pF Including jig capacitance
(30pF for MX29LV800T/B-70 & MX29LV800T/B-70R)

6.2K ohm

TEST POINTS

2.7K ohm

DIODES=IN3064

OR EQUIVALENT

OUTPUT

+3.3V

P/N:PM0709

AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.

REV. 1.3, JAN. 24, 2002

22

Figure 1. READ TIMING WAVEFORMS

MX29LV800T/B

tRC

Addresses

CE

WE

OE

Outputs

RESET

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VIH
VIL

HIGH Z

tOEH

tACC

tACC

ADD Valid

tCE

tOE

DATA V alid

tDF

tOH

HIGH Z

P/N:PM0709

REV. 1.3, JAN. 24, 2002

23

MX29LV800T/B

AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V

Table 10. Erase/Program Operations

29LV800T/B-70 (R) 29LV800T/B-90

SYMBOL PARAMETER MIN. MAX. MIN. MAX. UNIT

tW C Write Cycle Time (Note 1) 70 9 0 ns
tAS Address Setup Time 0 0 ns
tAH Address Hold Time 4 5 45 ns
tDS Data Setup Time 3 5 45 ns
tD H Data Hold Time 0 0 ns
tOES Output Enable Setup Time 0 0 ns
tGHWL Read Recovery Time Before Write 0 0 ns

(OE High to WE Low)
tCS CE Setup Time 0 0 ns
tC H CE Hold Time 0 0 ns
tWP Write Pulse Width 3 5 35 ns
tWPH Write Pulse Width High 3 0 30 ns
tWHWH1 Programming Operation (Note 2) 9/11(TYP.) 9/11(TYP.) us

(Byte/Word program time)
tWHWH2 Sector Erase Operation (Note 2) 0.7(TYP.) 0.7(TYP.) sec
tVCS VCC Setup Time (Note 1) 5 0 50 us
tRB Recovery Time from RY/BY 0 0 ns
tBUSY Program/Erase Vaild to RY/BY Delay 9 0 90 ns
tWPP1 Write Pulse Width for Sector Protect 100ns 10us 100ns 10us

(A9, OE Control) (Typ.) (Typ.)
tWPP2 Write Pulse Width for Sector Unprotect 100ns 12ms 100ns 12ms

(A9, OE Control) (Typ.) (Typ.)

NOTES:

1. Not 100% tested.

2. See the "Er ase and Programming P erformance" section for more information.

3. 29L V800T/B-70R operates at VCC=3.0V~3.6V .

P/N:PM0709

REV. 1.3, JAN. 24, 2002

24

MX29LV800T/B

AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V

T able 11. Alternate CE Contr olled Erase/Program Operations

29LV800T/B-70 (R) 29L V800T/B-90

SYMBOL P ARAMETER MIN. MAX. MIN. MAX. UNIT

tW C Write Cycle Time (Note 1) 7 0 70 ns
tAS Address Setup Time 0 0 ns
tAH Address Hold Time 45 45 ns
tDS Data Setup Time 35 4 5 ns
tDH Data Hold Time 0 0 ns
tOES Output Enable Setup Time 0 0 ns
tGHEL Read Recovery Time Bef ore Write 0 0 ns
tWS WE Setup Time 0 0 ns
tWH WE Hold Time 0 0 ns
tCP CE Pulse Width 3 5 3 5 ns
tCPH CE Pulse Width High 30 30 ns
tWHWH1 Programming Byte 9Typ. ) 9(Typ .) us

Operation(note2) Word 11(T yp.) 11(T yp.) us
tWHWH2 Sector Erase Operation (note2) 0.7(Typ.) 0.7(T yp .) sec

NOTE:

1. Not 100% tested.

2. See the "Er ase and Programming P erformance" section for more information.

3. 29L V800T/B-70R operates at VCC=3.0V~3.6V

P/N:PM0709

REV. 1.3, JAN. 24, 2002

25

Figure 2. COMMAND WRITE TIMING WAVEFORM

MX29LV800T/B

VCC

Addresses

WE

CE

OE

Data

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

3V

ADD Valid

tAS

tOES

tCS tCH

tWP

tDS

tAH

tWPH

tCWC

tDH

DIN

P/N:PM0709

REV. 1.3, JAN. 24, 2002

26

AUTOMATIC PROGRAMMING TIMING WAVEFORM

MX29LV800T/B

One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not re­quired because these operations are executed automati­cally by internal control circuit. Programming comple-

after automatic programming starts. Device outputs
DAT A during programming and DAT A after programming
on Q7.(Q6 is for toggle bit; see toggle bit, D AT A polling,
timing waveform)

tion can be verified by D A T A polling and toggle bit checking

Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM

Address

CE

OE

tWC

555h

tGHWL

tWP

tAS

PA

tAH

tCH

Read Status Data (last two cycle)Program Command Sequence(last two cycle)

PA PA

tWHWH1

WE

Data

RY/BY

VCC

tCS tWPH

tDS tDH

Status

DOUT

tVCS

A0h

PD

tBUSY

NOTES:

1.PA=Program Address, PD=Program Data, DOUT is the true data the program address

tRB

P/N:PM0709

REV. 1.3, JAN. 24, 2002

27

MX29LV800T/B

Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data A0H Address 555H

Write Program Data/Address

Increment
Address

No

No

Verify Word Ok ?

Last Address ?

Auto Program Completed

Data Poll
from system

YES

YES

P/N:PM0709

REV. 1.3, JAN. 24, 2002

28

Figure 5. CE CONTROLLED PROGRAM TIMING W A VEFORM

MX29LV800T/B

Address

WE

OE

CE

Data

555 for program
2AA for erase

tWC

tWH

tGHEL

tWS

tRH

tCP

tDS

tDH

PA for program
SA for sector erase
555 for chip erase

tAS

tAH

tCPH

A0 for program
55 for erase

Data Polling

tBUSY

PD for program
30 for sector erase
10 for chip erase

tWHWH1 or 2

PA

DQ7

DOUT

RESET

RY/BY

NOTES:

1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.

2.Figure indicates the last two bus cycles of the command sequence.

P/N:PM0709

REV. 1.3, JAN. 24, 2002

29

AUTOMATIC CHIP ERASE TIMING WAVEFORM

MX29LV800T/B

All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be veri-

matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DAT A polling, timing wav eform)

fied by DATA polling and toggle bit checking after auto-

Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM

Address

tWC

2AAh

CE

tGHWL

OE

tWP

tAS

555h

tAH

tCH

Read Status Data Erase Command Sequence(last two cycle)

VA VA

tWHWH2

WE

Data

RY/BY

VCC

tCS tWPH

tDS tDH

In

Progress

Complete

tRB

tVCS

55h

10h

tBUSY

NOTES:

SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

P/N:PM0709

REV. 1.3, JAN. 24, 2002

30

MX29LV800T/B

Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 10H Address 555H

NO

Data Pall from System

Data=FFh ?

YES

Auto Chip Erase Completed

P/N:PM0709

REV. 1.3, JAN. 24, 2002

31

AUTOMATIC SECTOR ERASE TIMING WAVEFORM

MX29LV800T/B

Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure comple-

ing after automatic erase starts. De vice outputs 0 dur­ing erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, D AT A polling, timing wa vef orm)

tion can be verified by DAT A polling and toggle bit check-

Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Address

CE

OE

tWC

2AAh

tGHWL

tWP

tAS

SA

tAH

tCH

Read Status Data Erase Command Sequence(last two cycle)

VA VA

tWHWH2

WE

Data

RY/BY

VCC

tCS tWPH

tDS tDH

In

Progress

Complete

tRB

tVCS

55h

30h

tBUSY

NOTES:

SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

P/N:PM0709

REV. 1.3, JAN. 24, 2002

32

MX29LV800T/B

Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 30H Sector Address

Last Sector
to Erase

YES

Data Poll from System

Data=FFh

YES

Auto Sector Erase Completed

NO

NO

P/N:PM0709

REV. 1.3, JAN. 24, 2002

33

MX29LV800T/B

Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART

START

Write Data B0H

Toggle Bit checking Q6

not toggled

YES

Read Array or

Program

Reading or

Programming End

YES

Write Data 30H

Continue Erase

Another

Erase Suspend ?

YES

NO

NO

NO

ERASE SUSPEND

ERASE RESUME

P/N:PM0709

REV. 1.3, JAN. 24, 2002

34

MX29LV800T/B

Figure 11. IN-SYSTEM SECTOR PROTECT/UNPROTECT TIMING WAVEFORM (RESET Control)

VID

RESET

SA, A6

A1, A0

Data

CE

WE

OE

VIH

Valid*

Sector Protect or Sector Unprotect

1us

Sector Protect =150us
Sector Unprotect =15ms

Valid* Valid*

Verify

40h60h60h

Status

P/N:PM0709

Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.

REV. 1.3, JAN. 24, 2002

35

MX29LV800T/B

Figure 12. SECTOR PROTECT TIMING WAVEFORM(A9, OE Control)

A1

A6

12V

3V

A9

12V

3V

OE

tVLHT

tVLHT

tVLHT

tWPP 1

Verify

WE

CE

Data

A18-A12

tOESP

01H F0H

tOE

Sector Address

P/N:PM0709

REV. 1.3, JAN. 24, 2002

36

MX29LV800T/B

Figure 13. SECTOR PROTECTION ALGORITHM (A9, OE Control)

START

Set Up Sector Addr

PLSCNT=1

OE=VID,A9=VID,CE=VIL

A6=VIL

Activate WE Pulse

Time Out 150us

No

PLSCNT=32?

Device Failed

Yes

No

Set WE=VIH, CE=OE=VIL
A9 should remain VID

Read from Sector

Addr=SA, A1=1

Data=01H?

Protect Another

Sector?

Remove VID from A9

Write Reset Command

Sector Protection

Complete

.

Yes

P/N:PM0709

REV. 1.3, JAN. 24, 2002

37

MX29LV800T/B

Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID

START

PLSCNT=1

RESET=VID

Wait 1us

Increment PLSCNT

No

PLSCNT=25?

Yes

Device failed

First Write
Cycle=60H

Yes

Set up sector address

Write 60H to sector address

with A6=0, A1=1, A0=0

Wait 150us

Verify sector protect :
write 40H with A6=0,

A1=1, A0=0

Read from sector address

No

Data=01H

Yes

Protect another

sector?

No

?

Yes

Temporary Sector
Unprotect Mode

Reset PLSCNT=1

P/N:PM0709

No

Remove VID from RESET

Write reset command

Sector protect complete

REV. 1.3, JAN. 24, 2002

38

MX29LV800T/B

Figure 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID

START

PLSCNT=1

RESET=VID

Wait 1us

Increment PLSCNT

No

PLSCNT=1000?

First Write

Cycle=60H ?

All sector

protected?

Set up first sector address

Sector unprotect :

write 60H with

A6=1, A1=1, A0=0

Wait 50ms

Verify sector unprotect

write 40H to sector address

with A6=1, A1=1, A0=0

Read from sector address

with A6=1, A1=1, A0=0

No

Data=00H

Yes

Yes

No

No

?

Temporary Sector
Unprotect Mode

Protect all sectors

Set up next sector address

P/N:PM0709

Yes

Device failed

Yes

Last sector

verified?

No

Remove VID from RESET

Write reset command

Sector unprotect complete

39

Yes

REV. 1.3, JAN. 24, 2002

MX29LV800T/B

Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control)

A1

12V

Vcc 3V

A9

A6

tVLHT

12V

Vcc 3V

OE

tVLHT

WE

tOESP

CE

Data

A18-A12

Notes: tVLHT (Voltage transition time)=4us min.

tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.)
tWPP2 (Write pulse width for sector unprotect)=100ns min, 12ms(Typ.)
tOESP (OE setup time to WE activ e)=4us min.

tWPP 2

tVLHT

Verify

00H

tOE

Sector Address

F0H

P/N:PM0709

REV. 1.3, JAN. 24, 2002

40

MX29LV800T/B

Figure 17. CHIP UNPROTECTION ALGORITHM(A9, OE Control)

START

Protect All Sectors

PLSCNT=1

Set OE=A9=VID
CE=VIL,A6=1

Activate WE Pulse

Increment

Sector Addr

Set Up First Sector Addr

Read Data from Device

No

Remove VID from A9

Write Reset Command

Time Out 50ms

Set OE=CE=VIL

A9=VID,A1=1

Data=00H?

Yes

All sectors have

been verified?

Yes

Chip Unprotect

Complete

No

Increment

PLSCNT

No

PLSCNT=1000?

Yes

Device Failed

P/N:PM0709

* It is recommended before unprotect whole chip, all sectors should be protected in advance.

REV. 1.3, JAN. 24, 2002

41

WRITE OPERATION STATUS

Figure 18. DATA POLLING ALGORITHM

Start

Read Q7~Q0

Add.=VA(1)

MX29LV800T/B

Q7 = Data ?

No

No

NOTE : 1.VA=Valid address for programming

2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.

Q5 = 1 ?

Yes

Read Q7~Q0

Add.=VA

Q7 = Data ?

No

FAIL

Yes

Yes

(2)

Pass

P/N:PM0709

REV. 1.3, JAN. 24, 2002

42

Figure 19. TOGGLE BIT ALOGRITHM

Start

Read Q7-Q0

MX29LV800T/B

Read Q7-Q0

Toggle Bit Q6 =

Toggle ?

YES

NO

Note:1.Read toggle bit twice to determine whether or not it is toggling.

2. Recheck toggle bit because it may stop toggling as Q5 change to "1".

Q5= 1?

YES

Read Q7~Q0 Twice

Toggle bit Q6=

Toggle?

YES

Program/Erase Operation

Not Complete,Write

Reset Command

(Note 1)

NO

(Note 1,2)

NO

Program/Erase

operation Complete

P/N:PM0709

REV. 1.3, JAN. 24, 2002

43

MX29LV800T/B

Figure 20. Data Polling Timings (During Automatic Algorithms)

tRC

Address

CE

OE

WE

Q7

Q0-Q6

RY/BY

tCH

tBUSY

tOEH

tACC

tCE

tOE

tDF

tOH

Complement

Status Data

Complement

Status Data

VAVAVA

Valid DataTrue

Valid DataTrue

High Z

High Z

NOTES:

P/N:PM0709

VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.

REV. 1.3, JAN. 24, 2002

44

MX29LV800T/B

Figure 21. Toggle Bit Timings (During Automatic Algorithms)

tRC

Address

tACC

VA

tCE

VA

VA

VA

CE

tCH

tOE

OE

tOEH

tDF

WE

tOH

Q6/Q2

tBUSY

High Z

Valid Status

(first raed)

Valid Status

(second read) (stops toggling)

Valid Data

Valid Data

RY/BY

NOTES:

VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.

P/N:PM0709

REV. 1.3, JAN. 24, 2002

45

MX29LV800T/B

Table 12. AC CHARACTERISTICS

Parameter Std Description Test Setup All Speed Options Unit

tREAD Y1 RESET PIN Low (During Automatic Algorithms) MAX 20 us

to Read or Write (See Note)

tREAD Y2 RESET PIN Low (NOT During Automatic MAX 50 0 ns

Algorithms) to Read or Write (See Note)
tRP RESET Pulse Width (During Automatic Algorithms) MIN 5 00 ns
tR H RESET High Time Before Read(See Note) MIN 50 ns
tRB RY/BY Recov ery Time(to CE, OE go low) MIN 0 ns

Note:Not 100% tested

Figure 22. RESET TIMING WAVEFORM

RY/BY

CE, OE

RESET

RY/BY

CE, OE

tRH

tRP

tReady2

Reset Timing NOT during Automatic Algorithms

tReady1

tRB

RESET

P/N:PM0709

tRP

Reset Timing during Automatic Algorithms

REV. 1.3, JAN. 24, 2002

46

MX29LV800T/B

AC CHARACTERISTICS

WORD/BYTE CONFIGURATION (BYTE)

Parameter Description Speed Options Unit
JEDEC Std -70 -9 0 -120

tELFL/tELFH CE to BYTE Switching Low or High Max 5 ns
tFLQZ BYTE Switching Low to Output HIGH Z Max 25 30 30 ns
tFHQV BYTE Switching High to Output Active Min 70 90 120 ns

Figure 23. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from byte

mode to word mode)

CE

OE

BYTE

Q0~Q14

Q15/A-1

tELFH

DOUT

(Q0-Q7)

VA

tFHQV

DOUT

(Q0-Q14)

DOUT

(Q15)

P/N:PM0709

REV. 1.3, JAN. 24, 2002

47

MX29LV800T/B

Figure 24. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word

mode to byte mode)

CE

OE

tELFH

BYTE

Q0~Q14

Q15/A-1

DOUT

(Q0-Q14)

DOUT

(Q15)

tFLQZ

DOUT

(Q0-Q7)

VA

Figure 25. BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS

CE

The falling edge of the last WE signal

WE

P/N:PM0709

BYTE

tAS tAH

REV. 1.3, JAN. 24, 2002

48

MX29LV800T/B

Table 13. TEMPORARY SECTOR UNPROTECT

Parameter Std. Description T est Setup AllSpeed Options Unit
tVIDR VID Rise and F all Time (See Note) Mi n 50 0 ns
tRSP RESET Setup Time for Temporary Sector Unprotect Min 4 us

Note:
Not 100% tested

FIgure 26. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM

12V

RESET

0 or Vcc

tVIDR

CE

WE

tRSP

RY/BY

Program or Erase Command Sequence

Figure 27. Q6 vs Q2 for Erase and Erase Suspend Operations

Enter Embedded

Erasing

WE

Q6

Erase

Erase

Suspend

Enter Erase

Suspend Program

Erase
Suspend
Program

Erase Suspend

Read

Erase

Resume

tVIDR

Erase

0 or Vcc

Erase

Complete

Q2

NOTES:

P/N:PM0709

The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended

REV. 1.3, JAN. 24, 2002

49

Figure 28. TEMPORAR Y SECT OR UNPROTECT ALGORITHM

Start

RESET = VID (Note 1)

Perform Erase or Program Operation

Operation Completed

RESET = VIH

Temporary Sector Unprotect Completed(Note 2)

MX29LV800T/B

Note :

1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V

2. All previously protected sectors are protected again.

P/N:PM0709

REV. 1.3, JAN. 24, 2002

50

Figure 29. ID CODE READ TIMING WAVEFORM

MX29LV800T/B

VCC

ADD

A9

ADD

A0

A1

ADD

A2-A8

A10-A18

CE

WE

OE

VIH

VIL

VIH

VIL

VIH

VIH

VIH

VIL

VIL

VIL

VIH

VIL

3V

VID
VIH

VIL

tACC

tACC

tCE

tOE

tDF

DATA

Q0-Q15

VIH

VIL

DATA OUT

C2H/00C2H

tOH

tOH

DATA OUT

DAH/5BH (Byte)
22DAH/225BH (Word)

P/N:PM0709

REV. 1.3, JAN. 24, 2002

51

MX29LV800T/B

ERASE AND PROGRAMMING PERFORMANCE(1)

LIMITS

PARAMETER MIN. TYP.(2) MAX.(3) UNITS

Sector Erase Time 0.7 15 s e c
Chip Erase Time 14 se c
Byte Programming Time 9 3 00 us
Word Programming Time 11 3 60 us
Chip Programming Time Byte Mode 9 27 sec

Word Mode 5.8 1 7 sec

Erase/Program Cycles 100,000 Cycles

Note: 1.Not 100% Tested, Excludes external system level o v er head.

2.Typical values measured at 25°C, 3V.

3.Maximum values measured at 25°C, 2.7V .

LATCHUP CHARACTERISTICS

MIN. MAX.

Input Voltage with respect to GND on all pins except I/O pins -1.0V 12.5V
Input Voltage with respect to GND on all I/O pins -1.0V Vcc + 1.0V
Current -100mA +100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.

P/N:PM0709

REV. 1.3, JAN. 24, 2002

52

MX29LV800T/B

ORDERING INFORMATION

PLASTIC P ACKA GE

P ART NO . ACCESS TIME OPERATING CURRENT ST ANDBY CURRENT P A CK AG E

(ns) MAX.(mA) MAX.(uA)

MX29L V800TMC-70 7 0 30 5 44 Pin SOP
MX29L V800BMC-70 70 30 5 44 Pin SOP
MX29L V800TMC-90 90 30 5 44 Pin SOP
MX29L V800BMC-90 90 30 5 44 Pin SOP
MX29LV800TTC-70 70 30 5 48 Pin TSOP

(Normal T ype)

MX29LV800TTC-70R 70 30 5 48 Pin TSOP

(Normal T ype)

MX29L V800BTC-70 70 30 5 48 Pin TSOP

(Normal T ype)

MX29LV800BTC-70R 70 30 5 48 Pin TSOP

(Normal T ype)

MX29LV800TTC-90 90 30 5 48 Pin TSOP

(Normal T ype)

MX29L V800BTC-90 90 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800TXBC-70 70 30 5 48 Ball CSP
MX29L V800TXBC-90 90 30 5 48 Ball CSP
MX29L V800BXBC-70 70 30 5 48 Ball CSP
MX29L V800BXBC-90 90 30 5 48 Ball CSP
MX29L V800TXEC-70 70 30 5 48 Ball CSP
MX29L V800TXEC-90 90 30 5 48 Ball CSP
MX29L V800BXEC-70 70 30 5 48 Ball CSP
MX29L V800BXEC-90 90 30 5 48 Ball CSP
MX29L V800TMI-70 70 30 5 44 Pin SOP
MX29LV800BMI-70 70 30 5 44 Pin SOP
MX29L V800TMI-90 90 30 5 44 Pin SOP
MX29LV800BMI-90 90 30 5 44 Pin SOP
MX29L V800TTI-70 70 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800TTI-70R 70 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800BTI-70 70 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800BTI-70R 70 30 5 48 Pin TSOP

(Normal T ype)

P/N:PM0709

REV. 1.3, JAN. 24, 2002

53

MX29LV800T/B

P ART NO . ACCESS TIME OPERATING CURRENT ST ANDBY CURRENT P A CK AG E

(ns) MAX.(mA) MAX.(uA)

MX29L V800TTI-90 90 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800BTI-90 90 30 5 48 Pin TSOP

(Normal T ype)
MX29L V800TXBI-70 70 30 5 48 Ball CSP
MX29L V800TXBI-90 90 30 5 48 Ball CSP
MX29LV800BXBI-70 70 30 5 48 Ball CSP
MX29LV800BXBI-90 90 30 5 48 Ball CSP
MX29L V800TXEI-70 70 30 5 48 Ball CSP
MX29L V800TXEI-90 90 30 5 48 Ball CSP
MX29LV800BXEI-70 70 30 5 48 Ball CSP
MX29LV800BXEI-90 90 30 5 48 Ball CSP

P/N:PM0709

REV. 1.3, JAN. 24, 2002

54

PACKAGE INFORMATION

48-PIN PLASTIC TSOP

MX29LV800T/B

P/N:PM0709

REV. 1.3, JAN. 24, 2002

55

44-PIN PLASTIC SOP

MX29LV800T/B

P/N:PM0709

REV. 1.3, JAN. 24, 2002

56

48-Ball CSP (for MX29LV800TXBC/TXBI/BXBC/BXBI)

MX29LV800T/B

P/N:PM0709

REV. 1.3, JAN. 24, 2002

57

48-Ball CSP (for MX29LV800TXEC/TXEI/BXEC/BXEI)

MX29LV800T/B

P/N:PM0709

REV. 1.3, JAN. 24, 2002

58

MX29LV800T/B

REVISION HISTORY

Revision No. Description Page Date

1.0 Change heading as "PRELIMINARY" P1 JUL/31/2001
Correct mis-typing P10,19~22,24,

25,48

Changed tBUSY spec from 90us to 90ns P2 4

1.1 Correct mis-typing P1,11,38,39, SEP/12/2001

44
tBUSY timing was changed from 90ns min. to 90ns max. P2 4
Add protection waveform and flowchart(A9, OE control) P36,37
Add BYTE timing waveform P47,48

1.2 1.Wording change of sector erase commands P11,13 NOV/23/2001

2.Add the typical spec of tWPP1/tWPP2 P24,40

1.3 Add MX29LV800TXEC & MX29LV800TXEI & MX29LV800BXEC P53,54 JAN/24/2002
& MX29LV800BXEI in Ordering Information
Add 48-Ball CSP for MX29LV800TXEC/TXEI/BXEC/BXEI P58

P/N:PM0709

REV. 1.3, JAN. 24, 2002

59

MX29LV800T/B

MACRONIX INTERNATIONAL CO., LTD.

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