Datasheet MX27C512TA-12, MX27C512TA-90, MX27C512TC-12, MX27C512TC-15, MX27C512TC-45 Datasheet (MXIC)

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Operating current: 30mA
Standby current: 100uA
Package type:
- 28 pin plastic DIP
- 32 pin PLCC
- 28 pin 8 x 13.4 mm TSOP(I)
1
PIN CONFIGURATIONS
GENERAL DESCRIPTION
The MX27C512 is a 5V only, 512K-bit, ultraviolet Eras­able Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program­ming signals are TTL levels, requiring a single pulse. For programming outside from the system, existing EPROM
programmers may be used. The MX27C512 supports intelligent fast programming algorithm which can result in programming time of less than fifteen seconds.
This EPROM is packaged in industry standard 28 pin dual-in-line packages 32 lead PLCC, and 28 lead TSOP(I) packages.
FEATURES
64K x 8 organization
Single +5V power supply
+12.5V programming voltage
Fast access time: 45/55/70/90/100/120/150ns
Totally static operation
Completely TTL compatible
P/N: PM0235
REV. 4.5, NOV. 09, 2001
BLOCK DIAGRAM
PIN DESCRIPTION
PLCC
8 x 13.4mm 28TSOP(I)
SYMBOL PIN NAME
A0~A15 Address Input Q0~Q7 Data Input/Output CE Chip Enable Input OE/VPP Output Enable Input/Program Supply
Voltage NC No Internal Connection VCC Power Supply Pin (+5V) GND Ground Pin
MX27C512
512K-BIT [64Kx8] CMOS EPROM
1 2 3 4 5 6 7 8 9 10 11 12 13 14
A15 A12
A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2
GND
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC A14 A13 A8 A9 A11 OE/VPP A10 CE Q7 Q6 Q5 Q4 Q3
MX27C512
1
4
5
9
13
14 17 20
21
25
29
32
30
A8 A9 A11 NC OE/VPP A10 CE Q7 Q6
A6 A5 A4 A3 A2 A1
A0 NC Q0
Q1
Q2
GND
NC
Q3Q4Q5
A7
A12
A15NCVCC
A14
A13
MX27C512
OE/VPP
A11
A9
A8 A13 A14
VCC
A15 A12
A7
A6
A5
A4
A3
22 23 24 25 26 27 28 1 2 3 4 5 6 7
A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2
21 20 19 18 17 16 15 14 13 12 11 10
9 8
MX27C512
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q7
CE
OE/VPP
A0~A15
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-SELECT
512K BIT
CELL
MAXTRIX
VCC GND
. . . . . . . .
. . . . . . . .
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MX27C512
AUTO IDENTIFY MODE
The auto identify mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and device type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the MX27C512.
To activate this mode, the programming equipment must force 12.0 ± 0.5(VH) on address line A9 of the device. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during auto identify mode.
Byte 0 ( A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device identifier code. For the MX27C512, these two identifier bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (Q7) defined as the parity bit.
READ MODE
The MX27C512 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE, assuming that CE has been LOW and addresses have been stable for at least tACC - tOE.
STANDBY MODE
The MX27C512 has a CMOS standby mode which reduces the maximum VCC current to 100uA . It is placed in CMOS standby when CE is at VCC ± 0.3 V. The MX27C512 also has a TTL-standby mode which reduces the maximum VCC current to 1.5 mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input.
FUNCTIONAL DESCRIPTION
THE PROGRAMMING OF THE MX27C512
When the MX27C512 is delivered, or it is erased, the chip has all 512K bits in the "ONE" or HIGH state. "ZEROs" are loaded into the MX27C512 through the procedure of programming.
For programming, the data to be programmed is applied with 8 bits in parallel to the data pins.
Vcc must be applied simultaneously or before Vpp, and removed simultaneously or after Vpp. When programming an MXIC EPROM, a 0.1uF capacitor is required across Vpp and ground to suppress spurious voltage transients which may damage the device.
FAST PROGRAMMING
The device is set up in the fast programming mode when the programming voltage OE/VPP = 12.75V is applied, with VCC = 6.25 V, (Algorithm is shown in Figure 1). The programming is achieved by applying a single TTL low level 100us pulse to the CE input after addresses and data line are stable. If the data is not verified, an additional pulse is applied for a maximum of 25 pulses. This process is repeated while sequencing through each address of the device. When the programming mode is completed, the data in all address is verified at VCC = 5V ± 10%.
PROGRAM INHIBIT MODE
Programming of multiple MX27C512s in parallel with different data is also easily accomplished by using the Program Inhibit Mode. Except for CE and OE, all like inputs of the parallel MX27C512 may be common. A TTL low-level program pulse applied to an MX27C512 CE input with OE/VPP = 12.5 ± 0.5V will program that MX27C512. A high-level CE input inhibits the other MX27C512s from being programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed bits to determine that they were correctly programmed. The verification should be performed with OE/VPP and CE, at VIL. Data should be verified tDV after the falling edge of CE.
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MX27C512
NOTES: 1. VH = 12.0 V ± 0.5 V
2. X = Either VIH or VIL
3. A1 - A8 = A10 - A15 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during programming.
MODE SELECT TABLE
PINS
MODE CE OE/VPP A0 A9 OUTPUTS
Read VIL VIL X X DOUT Output Disable VIL VIH X X High Z Standby (TTL) VIH X X X High Z Standby (CMOS) VCC±0.3V X X X High Z Program VIL VPP X X DIN Program Verify VIL VIL X X DOUT Program Inhibit VIH VPP X X High Z Manufacturer Code(3) VIL VIL VIL VH C2H Device Code(3) VIL VIL V IH VH 91H
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two­line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not occur.
It is recommended that CE be decoded and used as the primary device-selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1 uF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and GND to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7 uF bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.
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MX27C512
Figure1. FAST PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 6.25V
OE/VPP = 12.75V
PROGRAM ONE 100us PULSE
X = 0
LAST
ADDRESS ?
VERIFY BYTE
VCC = 5.25V
DEVICE PASSED
COMPARE
ALL BYTES
TO ORIGINAL
DATA
DEVICE FAILED
INCREMENT ADDRESS
FAIL
PASS
NO
NO
YES
YES
ADDRESS = FIRST LOCATION
LAST
ADDRESS ?
INCREMENT ADDRESS
FAIL
PASS
INCREMENT X
X = 25 ?
NO
OE/VPP = VIL
YES
PROGRAM ONE 100us PULSE
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MX27C512
SWITCHING TEST CIRCUITS
SWITCHING TEST WAVEFORMS
DEVICE UNDER
TEST
DIODES = IN3064 OR EQUIVALENT
CL = 100 pF including jig capacitance (30pF for 45/55/70 ns parts)
6.2K ohm
1.8K ohm +5V
CL
2.0V
0.8V
TEST POINTS
INPUT
2.0V
0.8V OUTPUT
AC TESTING: AC driving levels are 2.4V/0.4V for commercial grade, 3.0V/0V for industrial grade.
Input pulse rise and fall times are < 10ns.
AC driving levels
1.5V
TEST POINTS
INPUT
1.5V
OUTPUT
AC TESTING: (1) AC driving levels are 3.0V/0V for both commercial grade and industrial grade.
Input pulse rise and fall times are < 10ns. (2) For MX27C1000-45, MX27C1000/1001-55, MX27C1000/1001-70.
AC driving levels
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MX27C512
ABSOLUTE MAXIMUM RATINGS
RATING VALUE
Ambient Operating Temperature -40oC to 125oC Storage Temperature -65oC to 125oC Applied Input Voltage -0.5V to 7.0V Applied Output Voltage -0.5V to VCC + 0.5V VCC to Ground Potential -0.5V to 7.0V A9 & Vpp -0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are sub­ject to change.
DC/AC Operating Conditions for Read Operation
MX27C512
-45 -55 -70 -90 -10 -12 -15
Operating Commercial 0°C to 55°C0°C to 70°C0°C to 70°C0°C to 70°C0°C to 70°C0°C to 70°C0°C to 70°C Temperature Industrial -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C
Automotive -40°C to 125°C -40°C to 125°C -40°C to 125°C -40°C to 125°C
Vcc Power Supply 5V ± 5% 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%
DC CHARACTERISTICS
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
VOH Output High Voltage 2.4 V IOH = -0.4mA VOL Output Low Voltage 0.4 V IOL = 2.1mA VIH Input High Voltage 2.0 VCC + 0.5 V VIL Input Low Voltage -0.2 0.8 V ILI Input Leakage Current -10 10 uA VIN = 0 to 5.5V ILO Output Leakage Current -10 10 uA VOUT = 0 to 5.5V ICC3 VCC Power-Down Current 100 uA CE = VCC ± 0.3V ICC2 VCC Standby Current 1.5 mA CE = VIH ICC1 VCC Active Current 30 mA CE = VIL, f=5MHz, Iout =0mA IPP VPP Supply Current Read 10 uA CE = VIL, VPP = 5.5V
CAPACITANCE TA = 25
o
C, f = 1.0 MHz (Sampled only)
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
CIN Input Capacitance 8 12 pF VIN = 0V COUT Output Capacitance 8 12 pF VOUT = 0V Vpp VPP Capacitance 18 25 pF VPP = 0V
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DC PROGRAMMING CHARACTERISTICS TA = 25
o
C ± 5°C
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
VOH Output High Voltage 2.4 V IOH = -0.40mA VOL Output Low Voltage 0.4 V IOL = 2.1mA VIH Input High Voltage 2.0 VCC + 0.5 V VIL Input Low Voltage -0.2 0.8 V ILI Input Leakage Current -10 10 uA VIN = 0 to 5.5V VH A9 Auto Select Voltage 11.5 12.5 V ICC3 VCC Supply Current(Program & Verify) 40 mA IPP2 VPP Supply Current(Program) 30 mA CE = VIL VCC1 Fast Programming Supply Voltage 6.00 6.50 V VPP1 Fast Programming Voltage 12.5 13.0 V
27C512-10 27C512-12 27C512-15
SYMBOL PARAMETER MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS
tACC Address to Output Delay 100 120 150 ns CE = OE = VIL tCE Chip Enable to Output Delay 100 120 150 ns OE = VIL tOE Output Enable to Output 45 50 65 ns CE = VIL
Delay
tDF OE High to Output Float, 0 30 0 35 0 50 ns
or CE High to Output Float
tOH Output Hold from Address, 0 0 0 n s
CE or OE which ever occurred first
AC CHARACTERISTICS
27C512-45 27C512-55 27C512-70 27C512-90
SYMBOL PARAMETER MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS
tACC Address to Output Delay 45 55 70 90 ns CE = OE = VIL tCE Chip Enable to Output Delay 45 55 70 90 ns OE = VIL tOE Output Enable to Output 25 30 35 40 ns CE = VIL
Delay
tDF OE High to Output Float, 0 17 0 20 0 20 0 25 ns
or CE High to Output Float
tOH Output Hold from Address, 0000 ns
CE or OE which ever occurred first
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AC PROGRAMMING CHARACTERISTICS TA = 25
o
C ± 5°C
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
tAS Address Setup Time 2 us tDS Data Setup Time 2 us tAH Address Hold Time 0 us tDH Data Hold Time 2 us tDFP Chip Enable to Output Float Delay 0 130 ns tVPS VPP Setup Time 2 us tPW CE Program Pulse Width 95 105 us tVCS Vcc Setup Time 2 us tDV Data Valid from CE 150 ns tOEH OE/VPP Hold Time 2 ns tVR OE/VPP Recovery Time 2 ns
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MX27C512
WAVEFORMS
READ CYCLE
FAST PROGRAMMING ALGORITHM WAVEFORM
ADDRESS
INPUTS
DATA
OUT
OE
CE
DATA ADDRESS
VALID DATA
tDF
tACC
tCE
tOE
tOH
Addresses
CE
OE/VPP
DATA
VCC
VIH
VIL
VPP1
VIL
VCC1
VCC
VIH
VIL
DATA OUT VALID
Hi-z
tAS
tVPS
tVCS
tDV
tPW
tDS
tDH
tVR
tVPS
tAH
tDFP
PROGRAM VERIFY
PROGRAM
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MX27C512
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO. ACCESS TIME OPERATING STANDBY OPERATING PACKAGE
(ns) CURRENT MAX.(mA) CURRENT MAX.(uA) TEMPERATURE
MX27C512PC-45 45 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-45 45 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-45 45 30 100 0°C to 70°C 28 PinTSOP(I) MX27C512PC-55 55 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-55 55 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-55 55 30 100 0°C to 70°C 28 Pin TSOP(I) MX27C512PC-70 70 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-70 70 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-70 70 30 100 0°C to 70°C 28 Pin TSOP(I) MX27C512PC-90 90 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-90 90 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-90 90 30 100 0°C to 70°C 28 Pin TSOP(I) MX27C512PC-12 120 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-12 120 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-12 120 30 100 0°C to 70°C 28 Pin TSOP(I) MX27C512PC-15 150 30 100 0°C to 70°C 28 Pin DIP MX27C512QC-15 150 30 100 0°C to 70°C 32 Pin PLCC MX27C512TC-15 150 30 100 0°C to 70°C 28 Pin TSOP(I) MX27C512PI-45 45 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-45 45 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-45 45 30 100 -40°C to 85°C 28 PinTSOP(I) MX27C512PI-55 55 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-55 55 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-55 55 30 100 -40°C to 85°C 28 Pin TSOP(I) MX27C512PI-70 70 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-70 70 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-70 70 30 100 -40°C to 85°C 28 Pin TSOP(I) MX27C512PI-90 90 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-90 90 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-90 90 30 100 -40°C to 85°C 28 Pin TSOP(I) MX27C512PI-12 120 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-12 120 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-12 120 30 100 -40°C to 85°C 28 Pin TSOP(I) MX27C512PI-15 150 30 100 -40°C to 85°C 28 Pin DIP MX27C512QI-15 150 30 100 -40°C to 85°C 32 Pin PLCC MX27C512TI-15 150 30 100 -40°C to 85°C 28 Pin TSOP(I) MX27C512TA-90 90 30 100 -40°C to 125°C 28 Pin TSOP(I) MX27C512TA-120 120 30 100 -40°C to 125°C 28 Pin TSOP(I)
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PACKAGE INFORMATION
28-PIN PLASTIC DIP (600 mil)
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MX27C512
32-PIN PLASTIC LEADED CHIP CARRIER (PLCC)
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MX27C512
8 x 13.4mm 28-PIN PLASTIC TSOP
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MX27C512
REVISION HISTORY
Revision # Description Page Date
3.3 Programming Flow Chart corrected, programming verify after whole array programmed with 1 pulse.
4.0 1) Reduce operating current change from 40mA to 30mA.
2) Add 28-TSOP(I) and 28-SOP packages offering.
3) Eliminate Interactive Programming Mode.
4.1 IPP 100uA --> 10uA 08/07/1997
4.2 CDIP 70/90/100/120/150ns speed grades deleted from ordering 05/07/1998 information.
4.3 Cancel ceramic DIP package type P1,2,10,12 MAR/02/2000
4.4 Remove 28-pin SOP Package P1,10 SEP/19/2001 Package Information format changed P11~13
4.5 Add automotive grade P6,10 NOV/09/2001
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MX27C512
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