Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
MX0912B251Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19
Page 2
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
FEATURES
• Interdigitated structure; high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration, and specified in class C.
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
lumns
Top view
1
2
Fig.1 Simplified outline and symbol.
c
b
33
e
MAM045
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF
OPERATION
Class C
=10µs; δ = 10%
t
p
(GHz)
0.960 to 1.215 50 >235 >7 >42 see Figs 7 and 8
=25°C in a common base class C broadband amplifier.
mb
f
V
(V)
CC
P
(W)
L
G
po
(dB)
η
(%)
C
Zi/Z
L
(Ω)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current tp≤ 10 µs; δ≤10% − 15 A
total power dissipation
Tmb=75°C; tp≤ 10 µs; δ≤10% − 690 W
(peak power)
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
1000
handbook, halfpage
P
tot
(W)
800
600
400
200
0
−
50 200
tp=10µs; δ = 10%; P
0
tot max
100
= 690 W.
MGL041
Tmb (°C)
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 19 3
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
THERMAL CHARACTERISTICS
T
= 125 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See “
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
CBO
I
CES
I
EBO
thermal resistance from junction to mounting base CW 1.9 K/W
thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ = 10%
0.28 K/W
notes 1 and 2
Mounting recommendations in the General part of handbook SC19a”
.
collector cut-off current VCB=65V; IE= 0 100 mA
V
=50V; IE= 0 10 mA
CB
collector cut-off current VCE=60V; RBE= 0 100 mA
emitter cut-off current VEB= 1.5 V; IC=0 1 mA
APPLICATION INFORMATION
Microwave performance up to T
=25°C measured in the test jig as shown in Fig.6 and working in class C broadband
mb
mode in pulse; note 1.
MODE OF OPERATION
Class C;
=10µs; δ = 10%
t
p
t
= 300 µs; δ = 10%;
p
f
(GHz)
0.960 to 1.215 50 >235
1.03 to 1.09 50 typ. 280 typ. 8 typ. 48
V
(V)
CC
(2)
P
L
(W)
typ. 275
G
po
(dB)
>7
typ. 7.4
η
C
(%)
>42
typ. 47
see Fig.5
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
during pulse.
CC
Zi/Z
L
(Ω)
see Figs 7 and 8
1997 Feb 19 4
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
300
handbook, halfpage
P
L
(W)
250
200
0.95 1.05 1.15 1.25
VCC= 50 V; tp=10µs; δ = 10%.
f (GHz)
Fig.3 Load power as a function of frequency.
(In broadband test circuit as shown in Fig.6)
MGL042
50
handbook, halfpage
η
C
(%)
45
40
0.95 1.05 1.15 1.25
VCC= 50 V; tp=10µs; δ = 10%.
Fig.4 Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.6)
MGL043
f (GHz)
1997 Feb 19 5
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
handbook, full pagewidth
1 µs
1 µs
300 µs
3 ms
MGK066
Fig.5 Pulse definition.
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L1, L2 0.65 mm diameter copper wire − total length = 12 mm;
−
height of loop = 9 mm
L3 4 turns 0.65 mm diameter
copper wire
− int. diameter 3 mm;
L=5mm
−
C1 DC block 100 pF ATC, ref. 100A101KP50X
C2 tantalum capacitor 10 µF; 50 V
C3 electrolytic capacitor 470 µF; 63 V
C4 feedthrough bypass capacitor Erie, ref. 1250-003
C5, C6 variable gigatrim capacitor 0.8 to 8 pF Tekelec, ref. 729.1
1997 Feb 19 6
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
handbook, full pagewidth
30
6
40
0.635
6
−V
CC
83323
2.5
9
5
3
22
C3
5
5
22
30
53 12
0.635
11
+V
121
40
3
CC
C4
L1
4.5 5
L2
C5 C6
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.
Fig.6 Broadband test circuit.
1997 Feb 19 7
L3
C1
MGK068
Page 8
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
handbook, full pagewidth
VCC= 50 V; Zo=5Ω; PL= 235 W.
Fig.7 Input impedance as a function of frequency associated with optimum load impedance.
1
0.5
0.960 GHz
0.2
+
j
0
− j
0.2
0.2 0.5 1 2 5 10
0.5
1.215 GHz
1
2
5
10
∞
10
5
2
MGL039
handbook, full pagewidth
VCC= 50 V; Zo=5Ω; PL= 235 W.
Fig.8 Optimum load impedance as a function of frequency associated with input impedance.
1
0.5
0.2
+
j
0
− j
0.2
0.2 0.5 1 2 5 10
1.215 GHz
0.5
0.960 GHz
1
2
5
10
∞
10
5
2
MGL040
1997 Feb 19 8
Page 9
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
PACKAGE OUTLINE
handbook, full pagewidth
3.3
2.9
0.15 max
3.3
seating plane
8.25
12.85 max
23 max
3.7
max
16.5
6
max
1.6 max
3
9.85
max
MBC881
2.7
min
10.3
10.0
2.7
min
1
2
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
Fig.9 SOT439A.
1997 Feb 19 9
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Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19 10
Page 11
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B251Y
NOTES
1997 Feb 19 11
Page 12
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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 19 Document order number: 9397 750 01803
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