Datasheet MX0912B100Y, MZ0912B100Y Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

MX0912B100Y; MZ0912B100Y

NPN microwave power transistors

Product specification
Supersedes data of June 1992

1997 Feb 20

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power sharing and low
thermal resistance

• Input and output matching cell allows an easier design
of circuits.

APPLICATIONS

• Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange

package and improved output prematching cells. It is
recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

lumns

Top view

1

33

2

MAM045

Fig.1 Simplified outline and symbol (SOT439A).

handbook, halfpage

1

3

2

c

b

e

c

b

e

Top view

MAM314

Fig.2 Simplified outline and symbol (SOT443A).

QUICK REFERENCE DATA

Microwave performance at T

MODE OF OPERATION

Class-C; t

=10µs; δ = 10 % 0.960 to 1.215 50 >100 >7 >42 see Figs 8 and 9

p

≤ 25 °C in a common base class-C broadband amplifier.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

P

η

C

(%)

Zi; Z

(Ω)

L

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 20 2

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 10 µs; δ≤10 % − 6A
total power dissipation

(peak power)

tp≤ 10 µs; δ≤10 %;
Tmb=75°C

− 290 W

storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic;

− 235 °C

t ≤ 10 s

300

handbook, halfpage

P

tot

(W)

200

100

0

−

50 200

tp=10µs; δ = 10 %; P

0

tot max

100

= 290 W.

MGL046

Tmb (°C)

Fig.3 Maximum power dissipation derating as a

function of mounting-base temperature.

1997 Feb 20 3

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j−h

Notes

1. See “

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

thermal resistance from junction to mounting-base Tj= 125 °C 3.2 K/W
thermal resistance from mounting-base to heatsink Tj= 125 °C; note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs; δ =10%;

0.43 K/W

Tj= 125 °C; notes 1 and 2

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB=65V; IE= 0 40 mA

V

=50V; IE=0 4 mA

CB

collector cut-off current VCB=60V; RBE= 0 40 mA
emitter cut-off current VEB= 1.5 V; IC= 0 400 µA

APPLICATION INFORMATION

Microwave performance up to T

=25°C measured in the test jig as shown in Fig.7 and working in class C broadband

mb

in pulse mode; note 1.

MODE OF OPERATION

Class C;

=10µs; δ = 10%

t

p

t

= 300 µs; δ = 10%;

p

f

(GHz)

V

(V)

CC

(2)

P

(W)

L

0.960 to 1.215 50 ≥100
typ. 115

1.03 to 1.09 50 typ. 125 typ. 8 typ. 50

G

p

(dB)

≥7

typ. 7.6

η

C

(%)

≥42

typ. 44

see Fig.6

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. V

during pulse.

CC

Zi/Z

L

(Ω)

see Figs 8 and 9

1997 Feb 20 4

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

130

handbook, halfpage

P

L

(W)

120

110

0.95 1.05 1.15 1.25

VCC= 50 V; tp=10µs; δ = 10%.

f (GHz)

Fig.4 Load power as a function of frequency.

(In broadband test circuit as shown in Fig.7)

MGL047

50

handbook, halfpage

η

C

(%)

45

40

0.95 1.05 1.15 1.25

VCC= 50 V; tp=10µs; δ = 10%.

Fig.5 Collector efficiency as a function of

frequency. (In broadband test circuit as
shown in Fig.7)

MGL048

f (GHz)

1997 Feb 20 5

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

handbook, full pagewidth

1 µs

1 µs

300 µs

3 ms

MGK066

Fig.6 Pulse definition.

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1 0.65 mm diameter copper wire − total length = 12 mm;

−

height of loop = 12 mm

L2 4 turns 0.65 mm diameter

− int. dia. 3 mm; L = 5 mm −

copper wire
C1 capacitor 100 pF − ATC, ref. 100A101KP50X
C2 tantalum capacitor 10 µF; 50 V −−
C3 electrolytic capacitor 470 µF; 63 V −−
C4 feedthrough bypass capacitor −− Erie, ref. 1250-003
C5, C6 variable gigatrim capacitor 0.6 to 4.5 pF − Tekelec, ref. 727.1

1997 Feb 20 6

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

handbook, full pagewidth

30

18

40

0.635 0.635

23 3 4

10

12.5

C3

5

10

5

30

103

16

+V

331

40

7

CC

C4

L1

Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.

Fig.7 Broadband test circuit.

1997 Feb 20 7

C2

C5

L2

C1

MGK067

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

handbook, full pagewidth

VCC= 50 V; Zo=10Ω; PL= 100 W.

Fig.8 Input impedance as a function of frequency associated with optimum load impedance.

1

0.5

0.2

1.215 GHz

+

j

0

− j

0.2

0.2 0.5 1 2 5 10

0.960 GHz

0.5

1

2

5

10

∞

10

5

2

MGL044

handbook, full pagewidth

VCC= 50 V; Zo=10Ω.; PL= 100 W.

Fig.9 Optimum load impedance as a function of frequency associated with input impedance.

1

0.5

0.2

+

j

0

− j

0.2

0.2 0.5 1 2 5 10

1.215 GHz

0.960 GHz

0.5

1

2

5

10

∞

10

5

2

MGL045

1997 Feb 20 8

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

PACKAGE OUTLINES

handbook, full pagewidth

3.3

2.9

0.15 max

3.3

seating plane

8.25

12.85 max

23 max

3.7

max

16.5

6

max

1.6 max

3

9.85
max

MBC881

2.7

min

10.3

10.0

2.7

min

1

2

Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.

Fig.10 SOT439A.

1997 Feb 20 9

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

handbook, full pagewidth

3.5

2.9

3.4

3.2

0.1

X

seating plane

3

Y

1

2

24 max

3.1

0.5

4 min

Y

6.4

max

1.7 max

0.5 X

10.5

10.5
max23max

max

0.5 X

Dimensions in mm.
Torque on nut: max 0.5 Nm.
Recommended screw: M3

16.5

Fig.11 SOT443A.

MBC663

0.5 Y

1997 Feb 20 10

Philips Semiconductors Product specification

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 20 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 20 Document order number: 9397 750 01717