Datasheet MWI50-12A7T, MWI50-12A7 Datasheet (IXYS)

MWI 50-12 A7
MWI 50-12 A7T

IGBT Modules

Sixpack

Short Circuit SOA Capability
Square RBSOA

13

Preliminary Data

1
2

5
6

Type: NTC - Option:
MWI 50-12 A7 without NTC

MWI 50-12 A7T with NTC

3
4

17

7
8

IGBTs

Symbol Conditions Maximum Ratings
V

CES

V

GES

I

C25

I

C80

TVJ = 25°C to 150°C 1200 V

TC = 25°C 85 A
TC = 80°C 60 A

RBSOA VGE = ±15 V; RG = 22 W; TVJ = 125°C I

Clamped inductive load; L = 100 µH V

t

SC

(SCSOA) non-repetitive
P

tot

V

= V

CE

; VGE = ±15 V; RG = 22 W; TVJ = 125°C 10 µs

CES

TC = 25°C 350 W

Symbol Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

VJ

V

V
I

CES

CE(sat)

GE(th)

IC = 50 A; VGE = 15 V; TVJ = 25°C 2.2 2.7 V

TVJ = 125°C 2.5 V
IC = 2 mA; VGE = V
V

= V

CE

CES; VGE

CE

= 0 V; TVJ = 25°C 4 mA

TVJ = 125°C 3 mA

9

10

11
12

±

20 V

= 100 A

CM

£ V

CEK

CES

T

16
15
14

T

min. typ. max.

4.5 6.5 V

NTC

I

C25

V

CES

V

CE(sat) typ.

= 85 A
= 1200 V
= 2.2 V

Features

●

NPT IGBT technology

●

low saturation voltage

●

low switching losses

●

switching frequency up to 30 kHz

●

square RBSOA, no latch up

●

high short circuit capability

●

positive temperature coefficient for
easy parallelling

●

MOS input, voltage controlled

●

ultra fast free wheeling diodes

●

solderable pins for PCB mounting

●

package with copper base plate

Advantages

●

space savings

●

reduced protection circuits

●

package designed for wave soldering

Typical Applications

●

AC motor control

●

AC servo and robot drives

●

power supplies

I

GES

t

d(on)

t

r

t

d(off)

t

f

E
E

C
Q

R

on
off

ies

Gon

thJC

VCE = 0 V; VGE = ± 20 V 200 nA

Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22 W

VCE = 25 V; VGE = 0 V; f = 1 MHz 3300 pF
V

= 600V; VGE = 15 V; IC = 50 A 230 nC

CE

(per IGBT) 0.35 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

100 ns

70 ns

500 ns

70 ns

7.6 mJ

5.6 mJ

023

1 - 4

MWI 50-12 A7
MWI 50-12 A7T

Diodes

Symbol Conditions Maximum Ratings
I

F25

I

F80

TC = 25°C 110 A
TC = 80°C 70 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 50 A; VGE = 0 V; TVJ = 25°C 2.2 2.6 V

TVJ = 125°C 1.6 1.8 V

IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C 40 A
VR = 600 V; VGE = 0 V 200 ns

(per diode) 0.61 K/W

Temperature Sensor NTC (MWI ... A7T version only)

Symbol Conditions Characteristic Values

min. typ. max.

R

25

B

25/50

T = 25°C 4.75 5.0 5.25 kW

3375 K

Module

Symbol Conditions Maximum Ratings
T

VJ

T

stg

V

ISOL

M

d

I

£ 1 mA; 50/60 Hz 2500 V~

ISOL

Mounting torque (M5) 2.7 - 3.3 Nm

-40...+150 °C

-40...+125 °C

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 20.7 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 11.3 mW

Thermal Response

IGBT (typ.)

C

= 0.22 J/K; R

th1

C

= 1.74 J/K; R

th2

Free Wheeling Diode (typ.)

C

= 0.16 J/K; R

th1

C

= 1.37 J/K; R

th2

Dimensions in mm (1 mm = 0.0394")

= 0.26 K/W

th1

= 0.09 K/W

th2

= 0.483 K/W

th1

= 0.127 K/W

th2

Symbol Conditions Characteristic Values

min. typ. max.
R
d

d
R

pin-chip

S
A

thCH

Creepage distance on surface 6 mm
Strike distance in air 6 mm

with heatsink compound 0.02 K/W

5mW

Weight 180 g

© 2000 IXYS All rights reserved

Higher magnification see outlines.pdf

2 - 4

MWI 50-12 A7
MWI 50-12 A7T

120

TJ = 25°C

A

100

I

C

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGE=17V

15V

13V
11V

9V

V

V

CE

120

= 125°C

T

J

A

100

I

C

80

60

40

20

0

0.00.51.01.52.02.53.03.5

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

120

VCE = 20V

A

= 25°C

T

J

100

I

C

80

60

180

A

150

I

F

120

90

T

= 125°C

J

VGE=17V

15V

13V

11V

9V

V

V

CE

TJ = 25°C

40

20

0

567891011

V

GE

V

60

30

0

01234

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

free wheeling diode

20

VCE = 600V

V

= 50A

I

C

15

V

GE

10

5

0

0 50 100 150 200 250

Q

nC

G

120

A

I

RM

t

rr

80

40

I

RM

0

0 200 400 600 800 1000

V

F

TJ = 125°C
V

R

= 50A

I

F

-di/dt

= 600V

MWI50-12A7

A/ms

V

300

ns

t

rr

200

100

0

Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of

© 2000 IXYS All rights reserved

free wheeling diode

3 - 4

MWI 50-12 A7
MWI 50-12 A7T

E
t

d(off)

W

t

600

ns

off

500

t

400

300

200

100

f

0

A

24

mJ

18

E

on

12

t

d(on)

t

r

6

E

on

VCE = 600V
V

= ±15V

GE

R

= 22

G

TJ = 125°C

0

0 20406080100

I

C

120

ns

90

t

60

W

30

0

A

12

mJ

10

E

off

8

6

4

2

0

0 20406080100

I

C

VCE = 600V

= ±15V

V

GE

R

= 22

G

TJ = 125°C

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching

times versus collector current times versus collector current

20

V

= 600V

CE

mJ

15

E

on

= ±15V

V

GE

= 50A

I

C

T

= 125°C

J

t

E

d(on)

on

240

ns

180

t

10

V

= 600V

CE

mJ

E

off

= ±15V

V

GE

8

I

= 50A

C

= 125°C

T

J

t

d(off)

E

6

10

t

r

120

4

1500

ns

1200

off

t

900

600

5

0

0 102030405060708090100

R

G

60

0

W

2

0

0 102030405060708090100

R

G

300

t

f

0

W

Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching

times versus gate resistor times versus gate resistor

120

A

100

I

CM

80

60

RG = 22

= 125°C

T

J

< V

V

CEK

W

CES

40

20

0

0 200 400 600 800 1000 1200

V

V

CE

1

K/W

0.1

Z

thJC

0.01

diode

IGBT

0.001

0.0001

single pulse

0.00001

0.00001 0.0001 0.001 0.01 0.1 1
t

MWI50-12A7

s

Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance

RBSOA

© 2000 IXYS All rights reserved

4 - 4