
MWI 451-17 E9
IGBT Modules
Sixpack
Preliminary data
28
11/12
29
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C60
I
C80
TVJ = 25°C to 125°C 1700 V
TC = 25°C 580 A
TC = 60°C 475 A
TC = 80°C 405 A
RBSOA RG = 3.3 Ω; TVJ = 125°C I
Clamped inductive load; L = 100 µH V
t
SC
(SCSOA) TVJ = 125°C; non-repetitive; V
P
tot
V
= 1200 V; VGE = ±15 V; RG = 3.3 Ω;10µs
CE
CEmax
< V
CES
TC = 25°C 2.2 kW
9/10
±
20 V
= 750 A
CM
≤ V
CEK
CES
642
252015
262116
272217
231813
241914
531
I
C60
V
CES
V
CE(sat) typ
7/8
See outline drawing for pin arrangement
= 475 A
= 1700 V
= 2.25 V
Features
- NPT3 IGBT technology
- low saturation voltage
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient
for easy parallelling
- MOS input, voltage controlled
- ultra fast free wheeling diodes
- solderable pins for PCB mounting
- package with copper base plate
Advantages
- space savings
- reduced protection circuits
- package designed for wave soldering
E72873
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
IC = 450 A; VGE = 15 V; TVJ = 25°C 2.25 2.65 V
TVJ = 125°C 2.65 3.0 V
IC = 30 mA; VGE = V
V
CE
= V
= 0 V; TVJ = 25°C 1 mA
CES; VGE
TVJ = 125°C 9 26 mA
CE
57V
VCE = 0 V; VGE = ± 20 V 1.5 µA
100 ns
Inductive load, T
= 125°C
VJ
VCE = 900 V; IC = 450 A
VGE = ±15 V; RG = 3.3 Ω
90 ns
470 ns
400 ns
90 mJ
90 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 33 nF
V
= 900 V; VGE = 15 V; IC = 300 A 2.6 µC
CE
0.057 K/W
© 2007 IXYS All rights reserved
Typical Applications
- AC motor control
- AC servo and robot drives
- power supplies
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Diodes
Symbol Conditions Maximum Ratings
MWI 451-17 E9
I
I
F80
FRM
TC = 80°C 450 A
tp = 1 ms 900 A
I2t TVJ = 125°C; t = 10 ms; VR = 0 V 35000 A2s
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
R
thJC
IF = 450 A; VGE = 0 V; TVJ = 25°C 2.2 V
IF = 450 A; diF/dt = 3500 A/µs; 400 A
TVJ = 125°C; VR = 1200 V
0.075 K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
JM
T
stg
V
ISOL
M
d
operating -40...+125 °C
+150 °C
-40...+125 °C
I
≤ 1 mA; 50/60 Hz 3400 V~
ISOL
Mounting torque (M5) 3 - 6 Nm
Terminal connection torque (M6) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
term-chip
S
A
thCH
)
*
Resistance terminal to chip 0.55 mΩ
Creepage distance on surface 12.7 mm
Strike distance in air 10 mm
with heatsink compound 0.01 K/W
R
d
d
R
Weight 900 g
*) V = V
CE(sat)
+ 2x R
· IC resp. V = VF + 2x R
term-chip
term-chip
· I
F
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
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Dimensions in mm (1 mm = 0.0394")
MWI 451-17 E9
=
tolerance for all dimensions:
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
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MWI 451-17 E9
800
A
600
400
TJ = 25°C
TJ = 125°C
200
0
01234
V
CE
V
800
TJ = 125°C
A
I
600
C
400
200
0
01234
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
VGE= 17 V
V
CE
15 V
13V
11 V
9 V
V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
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