Page 1
MWI 30-06 A7
MWI 30-06 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
Preliminary Data
1
2
5
6
Type: NTC - Option:
MWI 30-06 A7 without NTC
MWI 30-06 A7T with NTC
3
4
17
7
8
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
TVJ = 25°C to 150°C 600 V
TC = 25°C 45 A
TC = 80°C 30 A
RBSOA VGE = ±15 V; RG = 33 Ω; TVJ = 125°C I
Clamped inductive load; L = 100 µH V
t
SC
(SCSOA) non-repetitive
P
tot
V
= V
CE
; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C 10 µs
CES
TC = 25°C 140 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
V
V
I
CES
CE(sat)
GE(th)
IC = 30 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
IC = 0.7 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.5 mA
9
10
11
12
±
20 V
= 60 A
CM
≤ V
CEK
CES
T
16
15
14
T
min. typ. max.
4.5 6.5 V
NTC
I
C25
V
CES
V
CE(sat) typ.
= 45 A
= 600 V
= 1.9 V
Features
l
NPT IGBT technology
l
low saturation voltage
l
low switching losses
l
switching frequency up to 30 kHz
l
square RBSOA, no latch up
l
high short circuit capability
l
positive temperature coefficient for
easy parallelling
l
MOS input, voltage controlled
l
ultra fast free wheeling diodes
l
solderable pins for PCB mounting
l
package with copper base plate
Advantages
l
space savings
l
reduced protection circuits
l
package designed for wave soldering
Typical Applications
l
AC motor control
l
AC servo and robot drives
l
power supplies
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
on
off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = ±15 V; RG = 33 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 1600 pF
V
= 300V; VGE = 15 V; IC = 30 A 150 nC
CE
(per IGBT) 0.88 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
B3 - 2
50 ns
50 ns
270 ns
40 ns
1.4 mJ
1.0 mJ
023
© 2000 IXYS All rights reserved
Page 2
MWI 30-06 A7
MWI 30-06 A7T
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 36 A
TC = 80°C 24 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 30 A; VGE = 0 V; TVJ = 25°C 2.0 2.2 V
TVJ = 125°C 1.5 1.7 V
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
VR = 300 V; VGE = 0 V 90 ns
(per diode) 2.11 K/W
Temperature Sensor NTC (MWI ... A7T version only)
Symbol Conditions Characteristic Values
min. typ. max.
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+150 °C
-40...+125 °C
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
IGBT (typ.)
C
= 0.156 J/K; R
th1
C
= 1.164 J/K; R
th2
Free Wheeling Diode (typ.)
C
= 0.065 J/K; R
th1
C
= 1.766 J/K; R
th2
Dimensions in mm (1 mm = 0.0394")
= 15 V; TJ = 125°C)
GE
V
= 0.95 V; R0 = 42 m
0
V0 = 1.09 V; R0 = 12 m
= 0.545 K/W
th1
= 0.155 K/W
th2
= 0.636 K/W
th1
= 0.344 K/W
th2
Ω
Ω
Symbol Conditions Characteristic Values
min. typ. max.
R
d
d
R
pin-chip
S
A
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
© 2000 IXYS All rights reserved
023
B3 - 3
Page 3
MWI 30-06 A7
MWI 30-06 A7T
90
A
75
I
C
60
VGE= 17V
15V
13V
45
30
15
TJ = 25°C
0
0123456
V
CE
11V
9V
V
90
A
75
I
C
60
VGE= 17V
15V
13V
45
30
15
0
0123456
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
90
A
75
I
C
60
45
30
T
= 125°C
J
TJ = 25°C
15
0
4 6 8 10 12 14 16
V
GE
VCE = 20V
V
50
40
A
I
F
30
= 125°C
T
J
20
10
0
0.00.51.01.52.02.5
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
11V
9V
TJ = 125°C
V
V
CE
TJ = 25°C
V
V
F
V
B3 - 4
20
50
V
40
A
30
t
rr
15
GE
I
RM
10
20
5
VCE = 300V
= 30A
I
C
0
0 20406080100120
nC
Q
G
10
I
RM
0
0 200 400 600 800 1000
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2000 IXYS All rights reserved
-di/dt
TJ = 125°C
V
= 300V
R
= 15A
I
F
MWI3006A7
A/µs
150
120
ns
90
60
30
0
t
rr
Page 4
MWI 30-06 A7
MWI 30-06 A7T
t
E
t
r
d(on)
on
80
ns
60
t
40
20
0
A
2.0
mJ
1.5
E
off
V
= 300V
CE
V
= ±15V
GE
R
= 33Ω
G
1.0
= 125°C
T
VJ
0.5
0.0
0204060
I
C
8
VCE = 300V
mJ
V
= ±15V
GE
R
= 33Ω
G
6
E
on
= 125°C
T
VJ
4
2
0
0204060
I
C
E
t
t
off
d(off)
f
400
ns
300
t
200
100
0
A
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
4
V
= 300V
CE
V
= ±15V
mJ
GE
= 30A
I
3
C
= 125°C
T
VJ
E
on
2
t
E
d(on)
t
r
on
80
ns
60
t
2.0
V
= 300V
CE
V
= ±15V
mJ
GE
= 30A
I
E
C
off
1.5
= 125°C
T
VJ
1.0
E
off
40
1
0.5
t
d(off)
400
ns
300
200
100
t
0
0 1020304050607080
R
G
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
80
A
60
I
CM
40
20
RG = 33 Ω
= 125°C
T
VJ
0
0 100 200 300 400 500 600 700
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
t
f
20
Ω
0.0
0 1020304050607080
R
G
0
Ω
10
K/W
1
Z
thJC
diode
IGBT
0.1
0.01
0.001
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MWI3006A7
s
t
© 2000 IXYS All rights reserved
B3 - 5
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