Datasheet MWI25-12A7T, MWI25-12A7 Datasheet (IXYS)

MWI 25-12 A7
MWI 25-12 A7T

IGBT Modules

Sixpack

Short Circuit SOA Capability
Square RBSOA

13

Preliminary Data

Type: NTC - Option:
MWI 25-12 A7 without NTC

MWI 25-12 A7T with NTC

IGBTs

Symbol Conditions Maximum Ratings
V

CES

V

GES

I

C25

I

C80

RBSOA VGE = ±15 V; RG = 47 W; TVJ = 125°C I

t

SC

(SCSOA) non-repetitive
P

tot

Symbol Conditions Characteristic Values

V

CE(sat)

V

GE(th)

I

CES

TVJ = 25°C to 150°C 1200 V

TC = 25°C 50 A
TC = 80°C 35 A

Clamped inductive load; L = 100 µH V
V

= V

CE

; VGE = ±15 V; RG = 47 W; TVJ = 125°C 10 µs

CES

TC = 25°C 225 W

IC = 25 A; VGE = 15 V; TVJ = 25°C 2.2 2.7 V

IC = 1 mA; VGE = V
V

= V

CE

CES; VGE

CE

= 0 V; TVJ = 25°C 2 mA

TVJ = 125°C 2 mA

1
2

3
4

17

(T

5
6

7
8

= 25°C, unless otherwise specified)

VJ

9

10

16
15
14

11
12

±

20 V

= 50 A

CM

£ V

CEK

CES

min. typ. max.

T

NTC

T

TVJ = 125°C 2.6 V

4.5 6.5 V

I

C25

V

CES

V

CE(sat) typ.

= 50 A
= 1200 V
= 2.2 V

Features

●

NPT IGBT technology

●

low saturation voltage

●

low switching losses

●

switching frequency up to 30 kHz

●

square RBSOA, no latch up

●

high short circuit capability

●

positive temperature coefficient for
easy parallelling

●

MOS input, voltage controlled

●

ultra fast free wheeling diodes

●

solderable pins for PCB mounting

●

package with copper base plate

Advantages

●

space savings

●

reduced protection circuits

●

package designed for wave soldering

Typical Applications

●

AC motor control

●

AC servo and robot drives

●

power supplies

I

GES

t

d(on)

t

r

t

d(off)

t

f

E
E

C
Q

R

on
off

ies

Gon

thJC

VCE = 0 V; VGE = ± 20 V 200 nA

Inductive load, TVJ = 125°C
VCE = 600 V; IC = 25 A
VGE = ±15 V; RG = 47 W

VCE = 25 V; VGE = 0 V; f = 1 MHz 1650 pF
V

= 600V; VGE = 15 V; IC = 35 A 120 nC

CE

(per IGBT) 0.55 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

100 ns

70 ns

500 ns

70 ns

3.8 mJ

2.8 mJ

023

1 - 4

MWI 25-12 A7
MWI 25-12 A7T

Diodes

Symbol Conditions Maximum Ratings
I

F25

I

F80

TC = 25°C 50 A
TC = 80°C 33 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 35 A; VGE = 0 V; TVJ = 25°C 2.4 2.6 V

TVJ = 125°C 1.7 1.9 V

IF = 25 A; diF/dt = -400 A/µs; TVJ = 125°C 20 A
VR = 600 V; VGE = 0 V 200 ns

(per diode) 1.19 K/W

Temperature Sensor NTC (MWI ... A7T version only)

Symbol Conditions Characteristic Values

min. typ. max.

R

25

B

25/50

T = 25°C 4.75 5.0 5.25 kW

3375 K

Module

Symbol Conditions Maximum Ratings
T

VJ

T

stg

V

ISOL

M

d

I

£ 1 mA; 50/60 Hz 2500 V~

ISOL

Mounting torque (M5) 2.7 - 3.3 Nm

-40...+150 °C

-40...+125 °C

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 40.7 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 24.9 mW

Thermal Response

IGBT (typ.)

C

= 0.136 J/K; R

th1

C

= 1.309 J/K; R

th2

Free Wheeling Diode (typ.)

C

= 0.081 J/K; R

th1

C

= 0.915 J/K; R

th2

Dimensions in mm (1 mm = 0.0394")

= 0.418 K/W

th1

= 0.132 K/W

th2

= 0.973 K/W

th1

= 0.217 K/W

th2

Symbol Conditions Characteristic Values

min. typ. max.
R
d

d
R

pin-chip

S
A

thCH

Creepage distance on surface 6 mm
Strike distance in air 6 mm

with heatsink compound 0.02 K/W

5mW

Weight 180 g

© 2000 IXYS All rights reserved

Higher magnification see outlines.pdf

2 - 4

MWI 25-12 A7
MWI 25-12 A7T

60

TJ = 25°C

A

50

I

C

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGE=17V

15V
13V

11V

9V

V

V

CE

60

T

= 125°C

J

A

50

I

C

40

30

20

10

0

0.00.51.01.52.02.53.03.5

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

60

VCE = 20V

= 25°C

T

J

A

50

I

C

40

30

20

10

0

567891011

V

V

GE

80

A

70
60

I

F

50
40
30
20
10

0

01234

T

= 125°C

J

VGE=17V

15V

13V
11V

9V

V

V

CE

TJ = 25°C

V

V

F

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

20

VCE = 600V

V

= 25A

I

C

15

V

GE

10

5

0

0 20 40 60 80 100 120 140

Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of

© 2000 IXYS All rights reserved

free wheeling diode

60

A

I

RM

t

rr

40

TJ = 125°C

= 600V

-di/dt

V

R

= 25A

I

F

MWI 25-12A7

A/ms

20

I

RM

0

Q

G

nC

0 200 400 600 800 1000

300

ns

200

100

0

t

rr

free wheeling diode

3 - 4

MWI 25-12 A7
MWI 25-12 A7T

14
12

mJ

10

E

on

8

t

d(on)

6

t

r

4

E

2

on

VCE = 600V

= ±15V

V

GE

R

= 47

G

TJ = 125°C

0

0 1020304050

I

C

140
120

ns

100

t

6

mJ

5

E

off

4

80
60

3

W

40
20
0

A

2

1

0

0 1020304050

VCE = 600V
V

GE

R

G

TJ = 125°C

I

C

= ±15V

= 47

t

W

E

d(off)

t

600

off

ns

500

t

400

300

200

100

f

0

A

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching

times versus collector current times versus collector current

12

V

= 600V

CE

mJ

10

E

on

8

= ±15V

V

GE

= 25A

I

C

T

= 125°C

J

240

ns

t

d(on)

E

on

180

t

t

r

5

V

= 600V

CE

mJ

E

off

= ±15V

V

GE

4

I

= 25A

C

= 125°C

T

J

t

d(off)

E

3

6

120

2

4

2

0

0 40 80 120 160 200 240

R

G

W

60

0

1

0

0 40 80 120 160 200 240

R

G

1500

ns

1200

off

t

900

600

300

t

f

0

W

Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching

times versus gate resistor times versus gate resistor

70

A

60

I

50

CM

40
30

RG = 47

= 125°C

T

J

< V

V

CEK

20
10

0

0 200 400 600 800 100 0 1200

Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance

RBSOA

© 2000 IXYS All rights reserved

10

K/W

1

Z

thJC

W

CES

0.1

0.01

diode

IGBT

0.001

single pulse

0.0001

V

V

CE

0.00001 0.0001 0.001 0.01 0.1 1

MWI 25-12A7

s

t

4 - 4