Page 1
MWI 15-12 A7
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
Preliminary Data
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 82 W; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
P
tot
Symbol Conditions Characteristic Values
V
CE(sat)
V
GE(th)
I
CES
TVJ = 25°C to 150°C 1200 V
TC = 25°C 30 A
TC = 80°C 20 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 82 W; TVJ = 125°C 10 µs
CES
TC = 25°C 140 W
IC = 15 A; VGE = 15 V; TVJ = 25°C 2.0 2.6 V
IC = 0.6 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.9 mA
TVJ = 125°C 0.8 mA
1
2
3
4
17
(T
5
6
7
8
= 25°C, unless otherwise specified)
VJ
9
10
16
15
14
11
12
±
20 V
= 35 A
CM
£ V
CEK
CES
min. typ. max.
TVJ = 125°C 2.3 V
4.5 6.5 V
I
C25
V
CES
V
CE(sat) typ.
= 30 A
= 1200 V
= 2.0 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
solderable pins for PCB mounting
●
package with copper base plate
Advantages
●
space savings
●
reduced protection circuits
●
package designed for wave soldering
Typical Applications
●
AC motor control
●
AC servo and robot drives
●
power supplies
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
on
off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 82 W
VCE = 25 V; VGE = 0 V; f = 1 MHz 1000 pF
V
= 600V; VGE = 15 V; IC = 15 A 70 nC
CE
(per IGBT) 0.88 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
100 ns
75 ns
500 ns
70 ns
2.3 mJ
1.8 mJ
021
1 - 4
Page 2
MWI 15-12 A7
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 25 A
TC = 80°C 17 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 15 A; VGE = 0 V; TVJ = 25°C 2.4 2.7 V
TVJ = 125°C 1.7 V
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 16 A
VR = 600 V; VGE = 0 V 130 ns
(per diode) 2.1 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.327 V; R0 = 30 m
Thermal Response
IGBT (typ.)
C
= 0.156 J/K; R
th1
C
= 1.162 J/K; R
th2
Free Wheeling Diode (typ.)
C
= 0.065 J/K; R
th1
C
= 0.639 J/K; R
th2
= 15 V; TJ = 125°C)
GE
V0 = 1.37 V; R0 = 62 m
= 0.685 K/W
th1
= 0.195 K/W
th2
= 1.758 K/W
th1
= 0.342 K/W
th2
Ω
Ω
R
d
d
R
pin-chip
S
A
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
© 2000 IXYS All rights reserved
2 - 4
Page 3
MWI 15-12 A7
50
V
= 17V
A
40
I
C
GE
15V
13V
30
20
10
TVJ = 25°C TVJ = 125°C
0
01234567
V
CE
11V
9V
V
50
V
= 17V
A
40
I
C
GE
15V
13V
30
20
10
0
01234567
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
50
A
40
I
C
30
20
T
= 125°C
VJ
TVJ = 25°C
10
50
40
A
I
F
30
20
10
11V
9V
V
V
CE
TVJ = 25°CTVJ = 125°C
0
VCE = 20V
4 6 8 10 12 14 16
V
GE
V
0
01234
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
15
V
GE
10
5
VCE = 600V
= 15A
I
C
0
0 20406080100
Q
G
nC
40
t
rr
A
30
I
RM
20
10
I
RM
0
0 200 400 600 800 1000
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
V
F
TVJ = 125°C
V
I
-di/dt
= 600V
R
= 15A
F
A/ms
MWI1512A7
V
200
160
ns
t
rr
120
80
40
0
© 2000 IXYS All rights reserved
3 - 4
Page 4
MWI 15-12 A7
6
mJ
t
E
on
d(on)
4
t
r
2
E
on
VCE = 600V
V
= ±15V
GE
= 82
R
G
TVJ = 125°C
0
0102030
I
C
120
ns
t
80
40
W
0
A
6
mJ
E
off
4
V
2
V
R
TVJ = 125°C
0
0102030
I
C
= 600V
CE
= ±15V
GE
= 82
G
t
E
t
d(off)
off
W
f
600
ns
t
400
200
0
A
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
3
mJ
E
on
2
V
= 600V
CE
= ±15V
V
1
GE
= 15A
I
C
T
= 125°C
VJ
0
0 20406080100120140
R
G
E
t
d(on)
t
150
on
ns
t
100
r
50
0
W
2.0
E
mJ
E
off
1.5
1.0
0.5
off
V
V
I
C
T
0.0
0 20406080100120140
R
G
= 600V
CE
= ±15V
GE
= 15A
= 125°C
VJ
t
t
d(off)
f
W
800
ns
600
400
200
0
t
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
40
A
30
I
CM
20
10
RG = 82
W
= 125°C
T
VJ
0
0 200 400 600 800 1000 1200 1400
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
© 2000 IXYS All rights reserved
10
K/W
1
Z
thJC
diode
IGBT
0.1
0.01
0.001
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MWI1512A7
s
t
4 - 4
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