Datasheet MMBV2103LT1, MMBV2105LT1, MMBV2107LT1, MMBV2108LT1, MMBV2109LT1 Datasheet (LRC)

Silicon T uning Diode

LESHAN RADIO COMPANY, LTD.

MMBV2101LT1
MMBV2103LT1

These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance —10%

• Complete Typical Design Curves

3
CA THODE

1
ANODE

MMBV2105LT1
MMBV2107LT1
MMBV2108LT1

MMBV2109LT1
MV2101 MV2104
MV2106 MV2108

MV2109 MV21 11

MV21 1 5

6.8-100p

30 VOLTS

VOLTAGE VARIABLE

CAPACITANCE DIODES

3

1

2

MAXIMUM RATINGS(EACH DIODE)

Rating Symbol MV21XX MMBV21XXLT1 Unit

Reverse Voltage V
Forward Current I

Forward power Dissipation @T A

Derate above 25°C 2.8 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T

DEVICE MARKING

MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105L T1=4U MMBV2109LT1=4J

ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage
(IR=1.0µAdc)
Reverse Voltage Leakage Current I
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient TC
(VR=4.0Vdc,f=1.0MHz)

= 25°C P

R

F

D

J

stg

30 Vdc

200 mAdc

280 225 m W

+150 °C

–55 to +150 °C

V

(BR)R

R

C

30 — — Vdc

— — 0.1 µAdc

— 280 — ppm/°C

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MMBV2101~MMBV2109

MV2101~MV2115

–1/3

LESHAN RADIO COMPANY, LTD.

MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115

C T , Diode Capacitance

Device

MMBV2101LT1/MV2101 6.1 6.8 7.5 450 2.5 2. 7 3.2
MMBV2103LT1 9.0 1 0 11 400 2.5 2.9 3.2
MV2104 10.8 12 13.2 400 2.5 2.9 3.2
MMBV2105LT1/MV2105 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1/MV2108 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2109LT1/MV2109 29.7 33 36.3 200 2.5 3.0 3.2
MV2111 42.3 47 51.7 150 2.5 3.0 3.2
MV2115 90 100 110 100 2.6 3.0 3.3

MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.

V R = 4.0 Vdc, f = 1.0 MHz

pF

Min Nom Ma x Typ Min Typ Max

Q, Figure of Merit

V R = 4.0 Vdc,

f = 50 MHz

T R, Tuning Ratio

C 2 /C

f = 1.0 MHz

30

P ARAMETER TEST METHODS

,DIODE CAPACIT ANCE TEMPERATURE

4.T C

1. C T , DIODE CAPACITANCE

= C C + C J ). C T is measured at 1.0 MHz using a

(C

T

ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).

2. T

, TUNING RATIO

R

is the ratio of C T measured at 2.0 Vdc divided by

T

R

C

measured at 30 Vdc.

T

3. Q, FIGURE OF MERIT

Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:

2πfC

G

Q =

(Booton Electronics Model 33As8 or equivalent).Use

~

Lead Length

1/16”.

~

C

COEFFICIENT

TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
T

= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the

A

following equation,which defines TC
C

TC C=

(+85°C)– CT(–65°C )10

T

85+65 . C

:

C

6

(25°C)

T

Accuracy limited by measurement of CT to±0.1pF.

MMBV2101~MMBV2109

MV2101~MV2115

–2/3

1000

500

200

100

50

20

10

, DIODE CAPACITANCE (pF)

T

5.0

C

2.0

1.0

0.1

MV2115

MMBV2109LT1/MV2109

MMBV2105LT1/MV2105

MMBV2101LT1/MV2101

LESHAN RADIO COMPANY, LTD.

MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115

TYPICAL DEVICE CHARACTERISTICS

0.5

1.0 2.00.2 10

VR, REVERSE VOLTAGE (VOLTS)

3.00.3

Figure 1. Diode Capacitance versus Reverse V oltage

5.0

3020

1.040

at T

= 25°C

A

= (CURVE)

V

R

VR = 2.0 Vdc

VR = 30 Vdc

1.030

1.020

1.010

1.000

0.990

0.980

NORMALIZED DIODE CAPACITANCE

0.970

0.960

NORMALIZED TO C

T

, JUNCTION TEMPERATURE (°C)

J

Figure 2. Normalized Diode Capacitance versus

Junction Temperature

5000
3000

2000

1000

500

300
200

100

Q, FIGURE OF MERIT

50
30

20

10

1.0 2.0 5.0 7.0

MMBV2109LT1/MV2109

3.0

, REVERSE VOLTAGE (VOLTS)

V

R

MMBV2101LT1/MV2101

MV2115

10

Figure 4. Figure of Merit versus Reverse Voltage

VR = 4.0 Vdc

T

+100

T

= 25°C

A

f = 50 MHz

20

, REVERSE CURRENT (nA)

R

I

[phone] +25 +50-50 +75

5000
3000

2000

1000

500

300
200

100

Q, FIGURE OF MERIT

30

100

5.0

2.0

1.0

0.50

0.20

0.10

0.05

0.02

0.01

50

20
10

0

5.0 10 2015 25

V

, REVERSE VOLTAGE (VOLTS)

R

T

= 125°C

A

T

= 75°C

A

T

= 25°C

A

Figure 3. Reverse Current versus Reverse Bias

Voltage

MMBV2101LT1/MV2101

50
30

T

= 25°C

A

20

V

= 4.0 Vdc

R

10

10

20 200 250

30 50 70

f, FREQUENCY (MHz)

MV2115

MMBV2109LT1/MV2109

100

Figure 5. Figure of Merit versus Frequency

30

MMBV2101~MMBV2109

MV2101~MV2115

–3/3