Datasheet MUR 8100EG ONS Datasheet

MUR8100E, MUR880E

MUR8100E is a Preferred Device

SWITCHMODEt
Power Rectifiers

Ultrafast “E’’ Series with High Reverse
Energy Capability

The MUR8100 and MUR880E diodes are designed for use in

switching power supplies, inverters and as free wheeling diodes.

Features

• 20 mJ Avalanche Energy Guaranteed

• Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

• Ultrafast 75 Nanosecond Recovery Time

• 175°C Operating Junction Temperature

• Popular TO−220 Package

• Epoxy Meets UL 94 V−0 @ 0.125 in.

• Low Forward Voltage

• Low Leakage Current

• High T emperature Glass Passivated Junction

• Reverse Voltage to 1000 V

• Pb−Free Packages are Available*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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ULTRAFAST RECTIFIERS

8.0 A, 800 V − 1000 V

1

4

3

4

TO−220AC

CASE 221B

1

3

MARKING DIAGRAM

AY WWG

U8xxxE

KA

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 3

1 Publication Order Number:

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
U8xxxE = Device Code

KA = Diode Polarity

ORDERING INFORMATION

Device Package Shipping

MUR8100E TO−220 50 Units / Rail
MUR8100EG TO−220

MUR880E TO−220

Preferred devices are recommended choices for future use
and best overall value.

xxx = 100 or 80

(Pb−Free)

(Pb−Free)

50 Units / Rail

50 Units / Rail
50 Units / RailMUR880EG TO−220

MUR8100E/D

MUR8100E, MUR880E

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR880E

MUR8100E

Average Rectified Forward Current
(Rated V

, TC = 150°C) Total Device

R

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 kHz, TC = 150°C)

R

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Operating Junction and Storage Temperature Range TJ, T

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Case

V

V

I

F(AV)

I

R

RRM

RWM

V

R

I

FM

FSM

q

JC

stg

V

800

1000

8.0 A

16 A

100 A

−65 to +175 °C

2.0 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 1)

(i

= 8.0 A, TC = 150°C)

F

= 8.0 A, TC = 25°C)

(i

F

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, T
(Rated DC Voltage, T

Maximum Reverse Recovery Time

= 1.0 A, di/dt = 50 A/ms)

(I

F

= 0.5 A, iR = 1.0 A, I

(I

F

Controlled Avalanche Energy

(See Test Circuit in Figure 6)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

= 100°C)

C

= 25°C)

C

= 0.25 A)

REC

W

v

F

i

R

t

rr

AVAL

1.5

V

1.8
mA

500

25

ns

100

75
20 mJ

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2

MUR8100E, MUR880E

100

70

50

30

20

10

7.0

5.0

3.0

2.0

1.0

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

0.7

0.5

0.3

0.2

0.1

TJ = 175°C

100°C

0.6

, INSTANTANEOUS VOLTAGE (VOLTS)

v

F

25°C

1.20.8 1.0 1.4 1.6

10,000

* The curves shown are typical for the highest voltage device in the voltage

* grouping. Typical reverse current for lower voltage selections can be

1000

* estimated from these same curves if V

is sufficiently below rated VR.

R

m

100

175°C

150°C

10

1.0

, REVERSE CURRENT ( A)

R

I

0.1

100°C

TJ = 25°C

0.01
0

200 400 600 800 1000

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 2. Typical Reverse Current*

10

9.0

8.0

7.0

6.0

SQUARE WAVE

5.0

4.0

3.0

2.0

, AVERAGE FORWARD CURRENT (AMPS)

1.0

F(AV)

0

I

1.80.4

150140

, CASE TEMPERATURE (°C)

T

C

160

RATED VR APPLIED

dc

170 180

10

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

, AVERAGE FORWARD CURRENT (AMPS)I

1.0

F(AV)

SQUARE WAVE

SQUARE WAVE

0

20 600

Figure 1. Typical Forward Voltage

Figure 3. Current Derating, Case

14

R

= 16°C/W

q

JA

R

= 60°C/W

q

JA

(No Heat Sink)

dc

TJ = 175°C

12

SQUARE WAVE

10

8.0

6.0

dc

80 120100

, AMBIENT TEMPERATURE (°C)

T

A

140 160 200180

, AVERAGE POWER DISSIPATION (WATTS)

F(AV)

P

4.0

2.0

0

1.00

2.0 3.0 5.0

I

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

4.040

6.0 9.07.0 8.0 10

Figure 4. Current Derating, Ambient Figure 5. Power Dissipation

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3

dc

MERCURY

SWITCH

MUR8100E, MUR880E

+V

DD

I

L

40 mH COIL

BV

DUT

V

D

I

D

I

I

S

1

DUT

L

D

V

DD

Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.

When S
up linearly; and energy is stored in the coil. At t

is closed at t0 the current in the inductor IL ramps

1

the switch

1

is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV

and the diode begins to conduct the full load current

DUT

which now starts to decay linearly through the diode, and
goes to zero at t

.

2

By solving the loop equation at the point in time when S
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the ener gy stored in the inductor plus a finite amount
of energy from the V

power supply while the diode is in

DD

t

0

breakdown (from t

to t2) minus any losses due to finite

1

t

1

component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V

voltage is low compared to the

DD

breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
Equation (2).

The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.

1

Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.

t

2

was closed,

1

t

EQUATION (1):

W

AVAL

EQUATION (2):

W

AVAL

[

[

1

LI

2

1

LI

2

2
LPK

2
LPK

ǒ

BV

BV

DUT

DUT–VDD

CH1
CH2

50mV

A

20ms

953 V VERT500V

Ǔ

ACQUISITIONS

1 217:33 HRS

SAVEREF SOURCE

CH1 CH2 REF REF

Figure 8. Current−Voltage Waveforms

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4

STACK

CHANNEL 2:
I

L

0.5 AMPS/DIV.

CHANNEL 1
V

DUT

500 VOLTS/DIV.

TIME BASE
20 ms/DIV.

:

:

MUR8100E, MUR880E

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.1

0.05

0.07

(NORMALIZED)

0.05

0.01

0.03

r(t), TRANSIENT THERMAL RESISTANCE

0.02

SINGLE PULSE

0.01

0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000

2.0 5.0 10 20 50

t, TIME (ms)

Figure 9. Thermal Response

1000

300

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

TJ = 25°C

Z

(t) = r(t) R

q

JC

R

q

JC

q

JC

= 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

2

J(pk)

− TC = P

(pk)

1

Z

1001.0

(t)

q

JC

100

C, CAPACITANCE (pF)

30

10

101.0

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 10. Typical Capacitance

100

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5

MUR8100E, MUR880E

PACKAGE DIMENSIONS

TO−220 TWO−LEAD

CASE 221B−04

ISSUE D

C

Q

B

4

F

T

S

A

13

U

H

K

L

D

G

R

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.82
D 0.025 0.035 0.64 0.89
F 0.142 0.147 3.61 3.73
G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
U 0.000 0.050 0.000 1.27

MILLIMETERSINCHES

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MUR8100E/D

6