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MUR8100E, RURP8100
Data Sheet January 2000
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(t
< 75ns) with soft recovery characteristics. They have a
rr
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switchingpower
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09617.
Ordering Information
PART NUMBER PACKAGE BRAND
MUR8100E TO-220AC MUR8100
RURP8100 TO-220AC RURP8100
NOTE: When ordering, use entire part number.
File Number 2780.4
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<75ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave 1 Phase 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
MUR8100E
RURP8100 UNITS
1000 V
1000 V
1000 V
8A
16 A
100 A
75 W
20 mJ
-55 to 175
AVL
, T
R
D
J
o
C
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1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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MUR8100E, RURP8100
Electrical Specifications T
= 25oC, Unless Otherwise Specified.
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 8A - - 1.8 V
IF = 8A, TC = 150oC - - 1.5 V
I
R
VR = 1000V - - 100 µA
VR = 1000V, TC = 150oC - - 500 µA
t
rr
IF = 1A - - 85 ns
IF = 8A, dIF/dt = 200A/µs - - 100 ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A, dIF/dt = 200A/µs - 50 - ns
IF = 8A, dIF/dt = 200A/µs - 30 - ns
IF = 8A, dIF/dt = 200A/µs - 500 - nC
VR = 10V, IF = 0A - 30 - pF
- - 2.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr= Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta+tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
, REVERSE CURRENT (µA)
R
I
0.001
200
0.1
0.01
175oC
10
400
100oC
25oC
600
800
1
0
200
VR, REVERSE VOLTAGE (V)
40
10
, FORWARD CURRENT (A)
F
I
100oC
1
0.5
0 0.5 1 1.5
175oC
o
25
C
2 2.5
VF, FORWARD VOLTAGE (V)
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
2
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MUR8100E, RURP8100
Typical Performance Curves (Continued)
100
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
TC = 25oC, dIF/dt = 200A/µs
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
4
81
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
0.5
TC = 100oC, dIF/dt = 200A/µs
t
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
4
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
150
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
0.5 814
TC = 175oC, dIF/dt = 200A/µs
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
8
6
SQ. WAVE
4
2
, AVERAGE FORWARD CURRENT (A)
0
F(AV)
I
140 150 160 175165
T
155
, CASE TEMPERATURE (oC)
C
DC
170145
8
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
100
80
60
40
20
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
I = 1A
L = 40mH
R < 0.1Ω
E
Q
1 ANDt2
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
- VDD)]
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
)
MUR8100E, RURP8100
CURRENT
SENSE
LR
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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