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TO-247AC
VS-MUR3020WTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
Anode
1
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
max. 175 °C
T
J
Diode variation Common cathode
Base
common
cathode
2
13
Common
cathode
2 x 15 A
200 V
1.05 V
Anode
2
2
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
VS-MUR3020WTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current per leg I
Peak repetitive forward current per leg I
Operating junction and storage temperatures T
per leg
total device Rated V
RRM
I
F(AV)
FSM
, T
J
FM
, TC = 150 °C 30
R
Rated VR, square wave, 20 kHz, TC = 150 °C 30
Stg
200 V
15
200
- 65 to
175
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 15 A - - 1.05
F
I
= 15 A, TJ = 150 °C - - 0.85
F
VR = VR rated - - 10
T
= 150 °C, VR = VR rated - - 500
J
VR = 200 V - 55 - pF
T
Measured lead to lead 5 mm from package body - 12 - nH
S
V
μA
Document Number: 94080 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
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VS-MUR3020WTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
= 125 °C - 39 -
T
J
TJ = 25 °C - 1.6 -
T
= 125 °C - 4.1 -
J
TJ = 25 °C - 19 -
rr
T
= 125 °C - 90 -
J
I
= 15 A
F
/dt = 200 A/μs
dI
F
= 160 V
V
R
-22-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC MUR3020WT
, T
T
J
Stg
R
--1.5
thJC
R
thJA
R
thCS
Typical socket mount - - 40
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
-0.5-
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
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Page 3
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-MUR3020WTPbF
®
Vishay Semiconductors
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
200 25050
VR - Reverse Voltage (V)
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 1.50.3 0.9
Ultrafast Rectifier, 2 x 15 A FRED Pt
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.6
VF - Forward Voltage Drop (V)
1.2
1000
100
10
1
- Reverse Current (µA)
0.1
R
I
0.01
0 100 150
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94080 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
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thJC
Characteristics
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VS-MUR3020WTPbF
05
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
10 15 20
Square wave (D = 0.50)
Rated V
R
applied
25
01020
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
515
5
10
25
15
20
RMS limit
25
100 1000
Q
rr
(nC)
dIF/dt (A/µs)
40
IF = 30 A
I
F
= 15 A
I
F
= 8 A
200
120
VR = 160 V
T
J
= 125 °C
T
J
= 25 °C
80
160
0
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Ultrafast Rectifier, 2 x 15 A FRED Pt
60
50
40
(ns)
rr
t
30
20
10
100 1000
Fig. 7 - Typical Reverse Recovery Time vs. dI
®
dIF/dt (A/µs)
VR = 160 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
= 15 A
I
F
= 8 A
I
F
/dt
F
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
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F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
Fig. 8 - Typical Stored Charge vs. dI
R
/dt
F
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Page 5
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MUR3020WTPbF
Ultrafast Rectifier, 2 x 15 A FRED Pt
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
D
IRFP250
S
®
Vishay Semiconductors
Document Number: 94080 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
Fig. 10 - Reverse Recovery Waveform and Definitions
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VS-MUR3020WTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
®
ORDERING INFORMATION TABLE
Device code
Dimensions www.vishay.com/doc?95223
Part marking information www.vishay.com/doc?95226
VS- MUR 30 20 WT PbF
51 32 4 6
1 - Vishay Semiconductors product
2 - Ultrafast MUR series (TO-247AC)
3 - Current rating (30 = 30 A)
- Voltage rating (20 = 200 V)
4
- WT = Center tap (dual) TO-247
5
6 - PbF = Lead (Pb)-free
Tube standard pack quantity: 25 pieces
LINKS TO RELATED DOCUMENTS
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Page 7
www.vishay.com
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay Semiconductors
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
(3)
(4)
(5)
(6)
(7)
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 95223
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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