Datasheet MUR1620CTPBF DataSheet (Vishay)

VS-MUR1620CTPbF

TO-220AB

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt

Anode

PRODUCT SUMMARY

Package TO-220AB

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

max. 175 °C

T

J

Diode variation Common cathode

Base

common

cathode

2

2

Common

cathode

13

2 x 8 A

200 V

0.975 V

Anode

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR1620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.

These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.

Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current

Non-repetitive peak surge current per leg I

Peak repetitive forward current per leg I

Operating junction and storage temperatures T

per leg

total device Rated V

I

F(AV)

FSM

, T

J

RRM

FM

, TC = 150 °C 16

R

Rated VR, square wave, 20 kHz, TC = 150 °C 16

Stg

200 V

8.0

100

- 65 to 175 °C

A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

,

V

BR

V

R

IR = 100 μA 200 - -

R

IF = 8 A - - 0.975

F

I

= 8 A, TJ = 150 °C - - 0.895

F

VR = VR rated - - 5

T

= 150 °C, VR = VR rated - - 250

J

VR = 200 V - 25 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

μA

Document Number: 94078 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [e-mail], [e-mail] 1

www.vishay.com/doc?91000

VS-MUR1620CTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 0.5 A, IR = 1.0 A, I

I

F

T

= 25 °C

J

= 125 °C - 34 -

T

J

TJ = 25 °C - 1.7 -

T

= 125 °C - 4.2 -

J

TJ = 25 °C - 23 -

rr

T

= 125 °C - 75 -

J

= 0.25 A - - 25

REC

= 8 A

I

F

dI

/dt = 200 A/μs

F

V

= 160 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AB MUR1620CT

T

, T

J

Stg

--3.0

R

thJC

R

thJA

R

thCS

Mounting surface, flat, smooth and
greased

®

-20-

- 65 - 175 °C

--50

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

°C/W

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Ultrafast Rectifier, 2 x 8 A FRED Pt

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

VS-MUR1620CTPbF

®

Vishay Semiconductors

100

10

1

- Instantaneous

F

I

Forward Current (A)

0.1

0.2 1.4

0 1.80.6 1.0

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

0.4 0.8 1.2 1.6

VF - Forward Voltage Drop (V)

100

10

1

0.1

- Reverse Current (µA)

0.01

R

I

0.001
0 100 150

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

200 25050

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

100

TJ = 25 °C

- Junction Capacitance (pF)

T

C

10

1 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Document Number: 94078 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

, [e-mail], [e-mail] 3

This datasheet is subject to change without notice.

thJC

Characteristics

www.vishay.com/doc?91000

VS-MUR1620CTPbF

03

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

160

170

180

See note (1)

150

DC

140

130

6912

Square wave (D = 0.50)
Rated V

R

applied

0612

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

39

2

4

10

6

8

RMS limit

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt

®

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

60

50

40

(ns)

rr

t

30

20

10

100 1000

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dI

200

VR = 160 V

= 125 °C

T

J

= 25 °C

T

160

J

IF = 30 A

= 15 A

I

F

(nC)

rr

Q

120

= 8 A

I

F

80

IF = 30 A

= 15 A

I

F

= 8 A

I

F

/dt

F

Note

(1)

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Fig. 6 - Forward Power Loss Characteristics

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

REV

x VFM at (I

F(AV)

) x R

;

thJC

/D) (see fig. 6);

F(AV)

This datasheet is subject to change without notice.

40

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

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Ultrafast Rectifier, 2 x 8 A FRED Pt

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

= 200 V

V

R

0.01 Ω

L = 70 μH

D.U.T.

VS-MUR1620CTPbF

®

Vishay Semiconductors

dIF/dt
adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94078 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-MUR1620CTPbF

2

- Ultrafast MUR series

1

- Vishay Semiconductors product

3

- Current rating (16 = 16 A)

4

- Voltage rating (20 = 200 V)

5

- CT = Center tap (dual)

Tube standard pack quantity: 50 pieces

6

- PbF = Lead (Pb)-free

Device code

51 32 4 6

VS- MUR 16 20 CT PbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95222

Part marking information www.vishay.com/doc?95225

®

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, [e-mail], [e-mail] Revision: 28-Apr-11

This datasheet is subject to change without notice.

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DIMENSIONS in millimeters and inches

13

2

D

D1

H1

Q

13

2

C

C

D

D

3 x b23 x b

(b, b2)

b1, b3

(H1)

D2

Detail B

C

A

B

L

e1

Lead tip

E

E2

Ø P

0.014 AB

M M

0.015 AB

MM

Seating

plane

c

A2

A1

A

A

A

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Conforms to JEDEC outline TO-220AB

(6)

(6)

(7)

(6)

(7)

e

2 x

L1

(2)

Detail B

Section C - C and D - D

View A - A

Base metal Plating

(4)

(4)

c1

c

(6)

Thermal pad

(E)

E1

(6)

Outline Dimensions

Vishay Semiconductors

TO-220AB

SYMBOL

A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7

b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147

D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and
E1

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Revision: 08-Mar-11 [e-mail]

NOTES SYMBOL

, [e-mail], [e-mail] 1

(7)

(8)

Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline

MILLIMETERS INCHES

NOTES

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