Datasheet MUR1520PBF DataSheet (Vishay)

VS-MUR1520PbF

TO-220AC

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Single die

cathode

1

Cathode

200 V

1.05 V

Base

15 A

2

Anode

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

3

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR1520PbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.

These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.

Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Peak repetitive forward current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

FM

Total device, rated VR, TC = 150 °C 15

Rated VR, square wave, 20 kHz, TC = 150 °C 30

Stg

200 V

200

- 65 to 175 °C

ANon-repetitive peak surge current I

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

,

V

BR

V

R

IR = 100 μA 200 - -

R

IF = 15 A - - 1.05

F

I

= 15 A, TJ = 150 °C - - 0.85

F

VR = VR rated - - 10

T

= 150 °C, VR = VR rated - - 500

J

VR = 200 V - 55 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

μA

Document Number: 94077 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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VS-MUR1520PbF

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 39 -

J

TJ = 25 °C - 1.6 -

T

= 125 °C - 4.1 -

J

= 15 A

I

F

/dt = 200 A/μs

dI

F

V

= 160 V

R

TJ = 25 °C - 19 -

T

= 125 °C - 90 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AC MUR1520

, T

T

J

Stg

R

--1.5

thJC

R

thJA

R

thCS

Mounting surface, flat, smooth and
greased

®

-22-

- 65 - 175 °C

--50

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

nsT

A

nC

°C/W

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Ultrafast Rectifier, 15 A FRED Pt

1

10

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

0 1.50.6 0.9

VF - Forward Voltage Drop (V)

I

F

- Instantaneous
Forward Current (A)

100

0.3 1.2

0.1

100

1000

0 10 100 1000

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

TJ = 25 °C

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

1000

100

VS-MUR1520PbF

®

Vishay Semiconductors

TJ = 175 °C

TJ = 150 °C

10

- Reverse Current (µA)

0.1

R

I

0.01

TJ = 125 °C

1

TJ = 25 °C

0 100 150

TJ = 100 °C

200 25050

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

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This datasheet is subject to change without notice.

thJC

Characteristics

www.vishay.com/doc?91000

VS-MUR1520PbF

0510

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

160

170

180

See note (1)

150

DC

140

130

15 20 25

Square wave (D = 0.50)
Rated V

R

applied

0 5 15 25

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

10 20

5

10

25

15

20

RMS limit

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

®

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

60

50

40

(ns)

rr

t

30

20

10

100 1000

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dI

200

VR = 160 V

= 125 °C

T

J

= 25 °C

T

160

J

IF = 30 A

= 15 A

I

F

(nC)

rr

Q

120

= 8 A

I

F

80

IF = 30 A

= 15 A

I

F

= 8 A

I

F

/dt

F

Note

(1)

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Fig. 6 - Forward Power Loss Characteristics

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

REV

x VFM at (I

F(AV)

) x R

;

thJC

/D) (see fig. 6);

F(AV)

This datasheet is subject to change without notice.

40

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

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Ultrafast Rectifier, 15 A FRED Pt

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

= 200 V

R

0.01 Ω

L = 70 μH

D.U.T.

VS-MUR1520PbF

®

Vishay Semiconductors

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94077 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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VS-MUR1520PbF

2 - Ultrafast MUR series

3 - Current rating (15 = 15 A)

- Voltage rating (20 = 200 V)

4

Tube standard pack quantity: 50 pieces

1

- Vishay Semiconductors product

5

- PbF = Lead (Pb)-free

Device code

51 32 4

VS- MUR 15 20 PbF

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

SPICE model www.vishay.com/doc?95271

®

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This datasheet is subject to change without notice.

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DIMENSIONS in millimeters and inches

(6)

E

(7)

E2

Q

(6)

D

D1

13

L3

L4

2

A

Ø P

0.014 AB

Detail B

L

MM

C

(6)

H1

(7)

TO-220AC

B

Seating

plane

A

A

A1

Outline Dimensions

Vishay Semiconductors

123

DL1D

H1

θ

E

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

CC

Detail B

Lead tip

SYMBOL

e1

MM

0.015 AB

c

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A

A2

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 [e-mail]

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