Datasheet MUR 1100ERLG ONS Datasheet

Page 1
MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODEt Power Rectifiers
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
10 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
These are Pb−Free Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in Plastic Bags; 1,000 per Bag
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR180E
MUR1100E
Average Rectified Forward Current (Note 1) (Square Wave Mounting Method #3 Per Note 3)
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
V
RRM
V
RWM
V
I
F(AV)
I
FSM
TJ, T
R
stg
800
1000
1.0 @
TA = 95°C
35 A
− 65 to +175
V
A
°C
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ULTRAFAST RECTIFIERS
1.0 AMPERES, 800−1000 VOLTS
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A
MUR1x0E
YYWW G
G
A = Assembly Location MUR1x0E = Device Code
x 8 or 10 Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1 Publication Order Number:
MUR180E/D
Page 2
MUR180E, MUR1100E
THERMAL CHARACTERISTICS
Charateristics Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Ambient
R
q
JA
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp, TJ = 150°C)
= 1.0 Amp, TJ = 25°C)
(i
F
Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/ms) (IF = 0.5 Amp, iR = 1.0 Amp, I
= 0.25 Amp)
REC
Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6) W
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
v
F
i
R
t
rr
t
fr
AVAL
ORDERING INFORMATION
Device Package Shipping
MUR180E Axial Lead* MUR180EG Axial Lead* MUR180ERL Axial Lead* MUR180ERLG Axial Lead* MUR1100E Axial Lead* MUR1100EG Axial Lead* MUR1100ERL Axial Lead* MUR1100ERLG Axial Lead*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
See Note 3 °C/W
V
1.50
1.75 mA
600
10
ns
100
75 75 ns
10 mJ
1000 Units / Bag
5000 / Tape & Reel
1000 Units / Bag
5000 / Tape & Reel
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2
Page 3
MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
0.1
0.07
0.05
T
= 175°C
J
100°C
25°C
1000
TJ = 175°C
100
m
10
1.0
, REVERSE CURRENT ( A)
R
I
0.1
0.01 0 300200 500 600
100 400 1000
VR, REVERSE VOLTAGE (VOLTS)
100°C
25°C
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.
5.0
4.0 R
q
3.0
RATED V
= 50°C/W
JA
800 900700
R
0.03
0.02
0.01
0.3 0.90.5 1.3
0.7
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
Figure 1. Typical Forward Voltage
5.0
(CAPACITIVELOAD)
4.0
3.0 TJ = 175°C
2.0
1.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
0
P
0
0.5 1.0 1.5 2.0 2.5
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 4. Power Dissipation
1.1 1.5 1.9
I
PK
+ 20
I
AV
1.7 2.1
SQUARE WAVE
2.3
2.0
SQUARE WAVE
1.0
, AVERAGE FORWARD CURRENT (AMPS)
0
F(AV)
I
050
dc
150100 200
TA, AMBIENT TEMPERATURE (°C)
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 3)
C, CAPACITANCE (pF)
7.0
5.0
3.0
2.0
20
TJ = 25°C
10
0
10 20
VR, REVERSE VOLTAGE (VOLTS)
30 40 50
5.010
dc
Figure 5. Typical Capacitance
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Page 4
MERCURY
SWITCH
S
MUR180E, MUR1100E
+V
DD
I
40 mH COIL
L
BV
V
D
I
D
I
DUT
1
t
0
L
DUT
I
D
V
DD
t
1
t
t
2
Figure 6. Test Circuit
The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and goes to zero at t2.
By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite
EQUATION (1):
W
AVAL
[
1
LI
2
2 LPK
ǒ
BV
BV
DUT
DUT–VDD
Ǔ
CH1 CH2
Figure 7. Current−Voltage Waveforms
component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules.
1
Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
50mV
A
20ms
953 V VERT500V
CHANNEL 2: I
L
0.5 AMPS/DIV.
EQUATION (2):
W
AVAL
[
1
LI
2
2 LPK
ACQUISITIONS
1 217:33 HRS
SAVEREF SOURCE
CH1 CH2 REF REF
Figure 8. Current−Voltage Waveforms
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4
STACK
CHANNEL 1: V
DUT
500 VOLTS/DIV.
TIME BASE: 20 ms/DIV.
Page 5
MUR180E, MUR1100E
NOTE 3 — AMBIENT MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(R
) for the mountings shown is to be used as typical
qJA
guideline values for preliminary engineering or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR R
Mounting
Method 1 2 3
R
q
JA
MOUNTING METHOD 1
L L
MOUNTING METHOD 2
L L
Lead Length, L
1/8 1/4 1/2 Units
52 67
IN STILL AIR
q
JA
65 72 80 87 50
°C/W °C/W °C/W
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8
Board Ground Plane
P.C. Board with
1−1/2 X 1−1/2 Copper Surface
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Page 6
AXIAL LEAD
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MUR180E, MUR1100E
PACKAGE DIMENSIONS
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B
K
D
F
A
F
K
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.
DIM MIN MAX MIN MAX
A 4.10 5.200.161 0.205 B 2.00 2.700.079 0.106 D 0.71 0.860.028 0.034 F −−− 1.27−−− 0.050 K 25.40 −−−1.000 −−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
MILLIMETERSINCHES
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MUR180E/D
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