Datasheet MUN5233DW1T1, MUN5212DW1T1, MUN5213DW1T1, MUN5214DW1T1, MUN5215DW1T1 Datasheet (LRC)

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RA TINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

CBO

CEO

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated) Symbol Max Unit

Total Device Dissipation P

D

T A = 25°C

Derate above 25°C

Thermal Resistance – R

θJA

Junction-to-Ambient 490 (Note 2.)

Characteristic

(Both Junctions Heated) Symbol Max Unit

Total Device Dissipation

P

D

T A = 25°C
Derate above 25°C

Thermal Resistance –

R

θJA

Junction-to-Ambient
Thermal Resistance –

R

θJL

Junction-to-Lead

Junction and Storage

T J , T

stg

Temperature

1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad

50 Vdc
50 Vdc

100 mAdc

187 (Note 1.) mW

256 (Note 2.)

1.5 (Note 1.)

mW/°C

2.0 (Note 2.)

670 (Note 1.) °C/W

250 (Note 1.)

mW

385 (Note 2.)

2.0 (Note 1.)

mW/°C

3.0 (Note 2.)

493 (Note 1.)

°C/W

325 (Note 2.)

188 (Note 1.)

°C/W

208 (Note 2.)

–55 to +150 °C

MUN5211DW1T1

Series

6

5

4

1

2

3

SOT-363

CASE 419B STYLE1

Q

6

2

R

1

5

R

2

R

1

2

4

1

R

2

Q

1

3

MARKING DIAGRAM

6

45

7X

132

7X = Device Marking

= (See Page 2)

DEVICE MARKING

INFORMATION

See specific marking information in
the device marking table on page 2 of
this data sheet.

MUN5211dw–1/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R 1(K) R 2(K) Shipping

MUN5211DW1T1 SOT–363 7A 10 10 3000/Tape & Reel
MUN5212DW1T1 SOT–363 7B 22 22 3000/Tape & Reel
MUN5213DW1T1 SOT–363 7C 47 47 3000/Tape & Reel
MUN5214DW1T1 SOT–363 7D 10 47 3000/Tape & Reel
MUN5215DW1T1 (Note 3.) SOT–363 7E 10 3000/Tape & Reel
MUN5216DW1T1 (Note 3.) SOT–363 7F 4.7 3000/Tape & Reel
MUN5230DW1T1 (Note 3.) SOT–363 7G 1.0 1.0 3000/Tape & Reel
MUN5231DW1T1 (Note 3.) SOT–363 7H 2.2 2.2 3000/Tape & Reel
MUN5232DW1T1 (Note 3.) SOT–363 7J 4.7 4.7 3000/Tape & Reel
MUN5233DW1T1 (Note 3.) SOT–363 7K 4.7 47 3000/Tape & Reel
MUN5234DW1T1 (Note 3.) SOT–363 7L 22 47 3000/Tape & Reel
MUN5235DW1T1 (Note 3.) SOT–363 7M 2.2 47 3000/Tape & Reel
MUN5236DW1T1 (Note 3.) SOT–363 7N 100 100 3000/Tape & Reel
MUN5237DW1T1 (Note 3.) SOT–363 7P 47 22 3000/Tape & Reel

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current MUN5211DW1T1
(V

= 6.0 V, I C = 0) MUN5212DW1T1

EB

= 50 V, I E = 0) I

CB

= 50 V, I B = 0) I

CE

CBO

CEO

I

EBO

MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1

Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0)

V
V

(BR)CBO

(BR)CEO

3. New resistor combinations. Updated curves to follow in subsequent data sheets.

4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

8 8

– – 100 nAdc
– – 500 nAdc

–

–
–
–
–
–
–
–
–
–
–
–
–
–
–

0.5

–

0.2

–

0.1

–

0.2

–

0.9

–

1.9

–

4.3

–

2.3

–

1.5

–

0.18

–

0.13

–

0.2

–

0.05

–

0.13
50 – – Vdc
50 – – Vdc

mAdc

MUN5211dw–2/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(Note 5.)

DC Current Gain MUN5211DW1T1
(V

= 10 V, I C = 5.0 mA) MUN5212DW1T1

CE

MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1

h

FE

35
60
80
80
160
160

3.0

8.0
15
80
80
80
80
80

60
100
140
140
350
350

5.0
15
30
200
150
140
150
140

–
–
–
–
–
–
–
–
–
–
–
–
–
–

Collector-Emitter Saturation Voltage

(IC= 10mA,IB= 0.3 mA)
(I C= 10mA, I B= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I C= 10mA, IB= 1mA) MUN5215DW1T1/MUN5216DW1T1

MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(V

= 5.0 V, V B = 2.5 V, R L = 1.0 kΩ)

CC

MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1

(V

= 5.0 V, V B = 3.5 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 5.5 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 4.0 V, R L = 1.0 kΩ)

CC

Output Voltage (off)
(V

= 5.0 V, V B = 0.05 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 0.25 V, R L = 1.0 kΩ)

CC

(V

CC

= 5.0 V, V B = 0.5 V, R L = 1.0 kΩ)

MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1

MUN5230DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1

V

CE(sat)

V

V

– – 0.25 Vdc

OL

OH

–
–
–
–
–
–
–
–
–
–
–
–
–
–

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

4.9 – – Vdc

Vdc

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

MUN5211dw–3/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(Note 6.)

Input Resistor MUN5211DW1T1

MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1

Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/

MUN5213DW1T1/MUN5236DW1T1

MUN5214DW1T1

MUN5215DW1T1/MUN5216DW1T1

MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1

MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1

R

1

R 1 /R

7.0

15.4

32.9

7.0

7.0

3.3

0.7

1.5

3.3

3.3

15.4

1.54
70

32.9

2

0.8

0.17
–

0.8

0.055

0.38

0.038

1.7

10
22
47
10
10

4.7

1.0

2.2

4.7

4.7
22

2.2
100
47

1.0

0.21
–

1.0

0.1

0.47

0.047

2.1

13

28.6

61.1
13
13

6.1

1.3

2.9

6.1

6.1

28.6

2.86
130

61.1

1.2

0.25
–

1.2

0.185

0.56

0.056

2.6

kΩ

6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

300

250

200

150

100

, POWER DISSIPATION (mW)

50

D

P

0

–50 0 50 100 150

T A , AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

833°C

MUN5211dw–4/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1

1

0.1

0.01

0.001
020 4050

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

4

3

2

I C , COLLECTOR CURRENT (mA)

Figure 2. V CE(sat) versus I C

1000

100

, DC CURRENT GAIN (NORMALIZED)

10

FE

1 10 100

h

I C , COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

100

10

1

0.1

1

C ob CAPACITANCE (pF)

0

01020304050

V R , REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

10

1

V in , INPUT VOL TAGE (VOLTS)

0.1
01020304050

I C , COLLECTOR CURRENT (mA)

Figure 6. Input V oltage versus Output Current

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001
012345678910

V in , INPUT VOLTAGE (VOLTS)

Figure 5. Output Current versus Input V oltage

MUN5211dw–5/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW1T1

10

1

0.1

0.01
020 4050

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

4

3

2

1

I C , COLLECTOR CURRENT (mA)

Figure 7. V CE(sat) versus I C

C ob CAPACITANCE (pF)

0

01020304050

V R , REVERSE BIAS VOLTAGE (VOLTS)

Figure 9. Output Capacitance

1000

100

, DC CURRENT GAIN (NORMALIZED)

10

FE

1 10 100

h

I C , COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

100

10

1

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001
012345678910

V in , INPUT VOLTAGE (VOLTS)

Figure 10. Output Current versus Input oltage

100

10

1

V in , INPUT VOL TAGE (VOLTS)

0.1
01020304050

I C ,COLLECTOR CURRENT (mA)

Figure 11. Input Voltage versus Output Current

MUN5211dw–6/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW1T1

10

1

0.1

0.01
020 4050

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

0.8

0.6

0.4

1

I C , COLLECTOR CURRENT (mA)

Figure 12. V CE(sat) versus I C

1000

100

10

, DC CURRENT GAIN (NORMALIZED)

FE

1 10 100

h

I C , COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

100

10

1

0.1

C ob CAPACITANCE (pF)

0.2

0

01020304050

V R , REVERSE BIAS VOLTAGE (VOLTS)

Figure 14. Output Capacitance

100

10

1

V in , INPUT VOL TAGE (VOLTS)

0.1
01020304050

I C , COLLECTOR CURRENT (mA)

Figure 16. Input V oltage versus Output Current

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001
012345678910

V in , INPUT VOLTAGE (VOLTS)

Figure 15. Output Current versus Input oltage

MUN5211dw–7/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW1T1

1

0.1

0.01

0.001
020406080

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

4

3.5

3

2.5

2

1.5

1

C ob CAPACITANCE (pF)

0.5

0

0 2 4 6 8 10152025303540 4550

I C , COLLECTOR CURRENT (mA)

Figure 17. V CE(sat) versus I C

V R , REVERSE BIAS VOLTAGE (VOLTS)

Figure 19. Output Capacitance

300

250

200

150

100

50

, DC CURRENT GAIN (NORMALIZED)

0

FE

1 2 3 4 5101520405060708090100

h

I C , COLLECTOR CURRENT (mA)

Figure 18. DC Current Gain

100

10

, COLLECTOR CURRENT (mA)

C

I

1

012345678910

V in , INPUT VOLTAGE (VOLTS)

Figure 20. Output Current versus Input oltage

10

1

V in , INPUT VOL TAGE (VOLTS)

0.1
01020304050

I C ,COLLECTOR CURRENT (mA)

Figure 21. Input V oltage versus Output Current

MUN5211dw–8/8