Datasheet mun5211t1-d Datasheet

MUN5211T1G Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base--emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC--70/SOT--323 package which is designed for low power surface mount applications.

Features

 Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  The SC--70/SOT--323 package can be soldered using wave or reflow.

The modified gull--winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

 Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel.

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

PIN 1

BASE

(INPUT)

1

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NPN SILICON

BIAS RESISTOR

TRANSISTORS

R

1

R

2

3

2

SC--70/SOT--323

CASE 419

STYLE 3

PIN 3 COLLECTOR (OUTPUT)

PIN 2 EMITTER (GROUND)

MAXIMUM RATINGS (T

Rating

Collector--Base Voltage V

Collector--Emitter Voltage V

Collector Current I

=25C unless otherwise noted)

A

Symbol Value Unit

CBO

CEO

C

50 Vdc

100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

Derate above 25C

Thermal Resistance, Junction--to--Ambient

Thermal Resistance, Junction--to--Lead

Junction and Storage Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR--4 @ Minimum Pad.

2. FR--4 @ 1.0 x 1.0 inch Pad.

T

A

=25C

P

R

θ

R

θ

TJ,T

202 (Note 1)

D

310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)

618 (Note 1)

JA

403 (Note 2)

280 (Note 1)

JL

332 (Note 2)

-- 55 to +150 C

stg

mW

mW/C

C/W

MARKING DIAGRAM

8x M G

G

8x = Device Code M = Date Code* G = Pb--Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2 of this data sheet.

 Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 9

1 Publication Order Number:

MUN5211T1/D

MUN5211T1G Series

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K) Shipping

MUN5211T1G SC--70/SOT--323

(Pb--Free)

MUN5212T1G SC--70/SOT--323

(Pb--Free)

MUN5213T1G SC--70/SOT--323

(Pb--Free)

MUN5214T1G SC--70/SOT--323

(Pb--Free)

MUN5215T1G SC--70/SOT--323

(Pb--Free)

MUN5216T1G (Note 3) SC--70/SOT--323

(Pb--Free)

MUN5230T1G SC--70/SOT--323

(Pb--Free)

MUN5231T1G (Note 3) SC--70/SOT--323

(Pb--Free)

MUN5232T1G SC--70/SOT--323

(Pb--Free)

MUN5233T1G SC--70/SOT--323

(Pb--Free)

MUN5234T1G (Note 3) SC--70/SOT--323

(Pb--Free)

MUN5235T1G SC--70/SOT--323

(Pb--Free)

MUN5236T1G (Note 3) SC--70/SOT--323

(Pb--Free)

MUN5237T1G (Note 3) SC--70/SOT--323

(Pb--Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3. New devices. Updated curves to follow in s ubsequent data sheets.

8A 10 10 3000 / Tape & Reel

8B 22 22 3000 / Tape & Reel

8C 47 47 3000 / Tape & Reel

8D 10 47 3000 / Tape & Reel

8E 10  3000 / Tape & Reel

8F 4.7  3000 / Tape & Reel

8G 1.0 1.0 3000 / Tape & Reel

8H 2.2 2.2 3000 / Tape & Reel

8J 4.7 4.7 3000 / Tape & Reel

8K 4.7 47 3000 / Tape & Reel

8L 22 47 3000 / Tape & Reel

8M 2.2 47 3000 / Tape & Reel

8N 100 100 3000 / Tape & Reel

8P 47 22 3000 / Tape & Reel

†

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2

MUN5211T1G Series

ELECTRICAL CHARACTERISTICS (T

=25C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector--Base Cutoff Current

=50V,IE=0)

(V

CB

Collector--Emitter Cutoff Current

=50V,IB=0)

(V

CE

Emitter--Base Cutoff Current MUN5211T1G

=6.0V,IC= 0) MUN5212T1G

(V

EB

MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G

Collector--Base Breakdown Voltage

(I

=10mA, IE=0)

C

Collector--Emitter Breakdown Voltage (Note 4)

=2.0mA,IB=0)

(I

C

ON CHARACTERISTICS (Note 4)

DC Current Gain MUN5211T1G

=10V,IC= 5.0 mA) MUN5212T1G

(V

CE

MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G

Collector--Emitter Saturation Voltage

=10mA,IB= 0.3 mA) MUN5211T1G

(I

C

MUN5212T1G MUN5213T1G MUN5214T1G MUN5236T1G

=10mA,IB= 5 mA) MUN5230T1G

(I

C

MUN5231T1G MUN5237T1G

=10mA,IB= 1 mA) MUN5215T1G

(I

C

MUN5216T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Symbol Min Typ Max Unit

I

CBO

I

CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

h

V

CE(sat)

FE

-- -- 100 nAdc

-- -- 500 nAdc

--

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

50 -- -- Vdc

35 60 80

80 160 160

3.0

8.0 15 80 80 80 80 80

60 100 140 140 350 350

5.0 15 30

200 150 140 150 140

--

Vdc

--

0.25

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3

MUN5211T1G Series

ELECTRICAL CHARACTERISTICS (T

=25C unless otherwise noted) (Continued)

A

Characteristic

ON CHARACTERISTICS (Note 5) (Continued)

Output Voltage (on)

(V

=5.0V,VB=2.5V,RL=1.0kΩ) MUN5211T1G

CC

MUN5212T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G

=5.0V,VB=3.5V,RL=1.0kΩ) MUN5213T1G

(V

CC

(V

=5.0V,VB=5.5V,RL=1.0kΩ) MUN5236T1G

CC

(V

=5.0V,VB=4.0V,RL=1.0kΩ) MUN5237T1G

CC

Output Voltage (off)

(V

=5.0V,VB=0.5V,RL=1.0kΩ) MUN5211T1G

CC

MUN5212T1G MUN5213T1G MUN5214T1G MUN5234T1G MUN5235T1G

=5.0V,VB=0.05V,RL=1.0kΩ) MUN5230T1G

(V

CC

(V

=5.0V,VB=0.25V,RL=1.0kΩ) MUN5215T1G

CC

MUN5216T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5236T1G MUN5237T1G

Input Resistor

MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G

Resistor Ratio

MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Symbol Min Typ Max Unit

V

OL

V

OH

R

R1/R

--

4.9

1

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

1.54 70

32.9

2

0.8

0.17

--

0.8

0.055

0.38

0.038

0.8

1.7

--

10 22 47 10 10

4.7

1.0

2.2

4.7

4.7 22

2.2

100

47

1.0

0.21

--

1.0

0.1

0.47

0.047

1.0

2.1

0.2

--

13

28.6

61.1 13 13

6.1

1.3

2.9

6.1

28.6

2.86

130

61.1

1.2

0.25

--

1.2

0.185

0.56

0.056

1.2

2.6

Vdc

kΩ

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4

MUN5211T1G Series

350

300

250

200

150

100

, POWER DISSIPATION (mW)

D

50

P

0

-- 50 0 50 100 150

R

= 403C/W

θ

JA

T

, AMBIENT TEMPERATURE (C)

A

Figure 1. Derating Curve

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5

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211T1G

1

IC/IB=10

0.1

0.01

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

0.001

CE(sat)

020 40

V

IC, COLLECTOR CURRENT (mA)

Figure 2. V

4

3

2

, CAPACITANCE (pF)

ob

1

C

0

010203040

V

, REVERSE BIAS VOLTAGE (VOLTS)

R

CE(sat)

TA=--25C

versus I

C

Figure 4. Output Capacitance

25C

75C

f=1MHz I

=0V

E

T

=25C

A

1000

VCE=10V

TA=75C

25C

-- 2 5 C

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

50

1 10 100

, COLLECTOR CURRENT (mA)

I

C

Figure 3. DC Current Gain

100

75C

10

1

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

0.001

50

01 234

25C

TA=--25C

56 78 910

V

, INPUT VOLTAGE (VOLTS)

in

VO=5V

Figure 5. Output Current versus Input Voltage

10

, INPUT VOLTAGE (VOLTS)

in

V

1

0.1

VO=0.2V

1002030

, COLLECTOR CURRENT (mA)

I

C

TA=--25C

75C

Figure 6. Input Voltage versus Output Current

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6

25C

40

50

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212T1G

1

IC/IB=10

0.1

0.01

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

0.001

CE(sat)

V

0

4

3

2

, CAPACITANCE (pF)

ob

1

C

0

0 10 203040

TA=--25C

20 50

, COLLECTOR CURRENT (mA)

I

C

Figure 7. V

V

, REVERSE BIAS VOLTAGE (VOLTS)

R

CE(sat)

25C

versus I

Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage

40

C

f=1MHz I

=0V

E

T

A

75C

=25C

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

I

, COLLECTOR CURRENT (mA)

C

10

VCE=10V

TA=75C

25C

-- 2 5 C

Figure 8. DC Current Gain

100

10

1

0.1

, COLLECTOR CURRENT (mA) h

0.01

C

I

0.001

50

0

246810

75C 25C

, INPUT VOLTAGE (VOLTS)

V

in

TA=--25C

VO=5V

100

VO=0.2V

TA=--25C

10

75C

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1 0

10 20 30 40 50

I

, COLLECTOR CURRENT (mA)

C

Figure 11. Input Voltage versus Output Current

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7

25C

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213T1G

10

IC/IB=10

1

f=1MHz I

=0V

E

T

=25C

A

25C

75C

50

TA=--25C

0.1

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

0.01

CE(sat)

0

V

Figure 12. V

1

0.8

0.6

20 40

I

, COLLECTOR CURRENT (mA)

C

versus I

CE(sat)

C

1000

TA=75C

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

I

, COLLECTOR CURRENT (mA)

C

10

Figure 13. DC Current Gain

100

75C

10

1

25C

TA=--25C

VCE=10V

25C

-- 2 5 C

0.4

, CAPACITANCE (pF)

ob

C

0.2

0

010203040

V

, REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 14. Output Capacitance

100

VO=0.2V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1

010 203040 50

Figure 16. Input Voltage versus Output Current

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

0.001

50

TA=--25C

I

, COLLECTOR CURRENT (mA)

C

VO=5V

0246810

V

, INPUT VOLTAGE (VOLTS)

in

Figure 15. Output Current versus Input Voltage

25C

75C

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8

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214T1G

1

IC/IB=10

0.1

0.01

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

0.001

V

020406080

IC, COLLECTOR CURRENT (mA)

Figure 17. V

4

3.5

3

2.5

CE(sat)

TA=--25C

versus I

75C

C

f=1MHz l

=0V

E

T

=25C

A

25C

300

VCE=10

250

200

150

100

, DC CURRENT GAIN (NORMALIZED)

50

FE

0

2468 1520405060708090

1 10 100

, COLLECTOR CURRENT (mA)

I

C

TA=75C

25C

-- 2 5 C

Figure 18. DC Current Gain

100

TA=75C

-- 2 5 C

25C

2

1.5

, CAPACITANCE (pF)

ob

1

C

0.5

0

0 2 4 6 8 10 1520 2530 3540 4550

, REVERSE BIAS VOLTAGE (VOLTS)

V

R

Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage

10

VO=0.2V

1

, INPUT VOLTAGE (VOLTS)

in

V

10

, COLLECTOR CURRENT (mA) h

C

I

1

0246810

Vin, INPUT VOLTAGE (VOLTS)

TA=--25C

25C

75C

VO=5V

0.1 01020304050

IC, COLLECTOR CURRENT (mA)

Figure 21. Input Voltage versus Output Current

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9

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G

, COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

, CAPACITANCE (pF)

ob

C

0.1

0.01

0.001

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

1

0

1000

IC/IB=10

10

75C

-- 2 5 C 25C

30

I

, COLLECTOR CURRENT (mA)

C

Figure 22. V

CE(sat)

versus I

T

=--25C

100

, DC CURRENT GAIN

FE

h

504020

A

10

1

IC, COLLECTOR CURRENT (mA)

C

Figure 23. DC Current Gain

75C

25C

100

10

75C

25C

f=1MHz I

=0V

E

T

=25C

A

1

=--25C

T

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

A

VO=5V

0.001

3525155

VR, REVERSE BIAS VOLTAGE (VOLTS)

45 50403020100

Vin, INPUT VOLTAGE (VOLTS)

6543210

Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage

VCE=10V

100101

10987

10

T

=--25C

A

1

25C

75C

, INPUT VOLTAGE (VOLTS)

in

V

0.1

VO=0.2V

3020100

IC, COLLECTOR CURRENT (mA)

Figure 26. Input Voltage versus Output Current

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10

40 50

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G

, COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

, CAPACITANCE (pF)

ob

C

0.1

0.01

0.001

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

1

IC/IB=10

-- 2 5 C 25C

30

I

, COLLECTOR CURRENT (mA)

C

Figure 27. V

CE(sat)

versus I

3525155

75C

C

f=1MHz I

=0V

E

T

=25C

A

45 50403020100

100

75C

10

=--25C

T

, DC CURRENT GAIN

FE

h

504020100

1

A

25C

VCE=10V

100101

IC, COLLECTOR CURRENT (mA)

Figure 28. DC Current Gain

100

75C

10

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001

1

T

A

25C

=--25C

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

VO=5V

6543210

10987

Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage

10

T

=--25C

A

75C

25C

3020100

VO=0.2V

40 50

, INPUT VOLTAGE (VOLTS) V

1

in

0.1

IC, COLLECTOR CURRENT (mA)

Figure 31. Input Voltage versus Output Current

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11

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G

, COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

, CAPACITANCE (pF)

ob

C

0.1

0.01

0.001

6

5

4

3

2

1

0

1

IC/IB=10

-- 2 5 C

75C

25C

30

I

, COLLECTOR CURRENT (mA)

C

Figure 32. V

CE(sat)

versus I

3525155

C

f=1MHz I

=0V

E

T

=25C

A

45 50403020100

1000

VCE=10V

100

T

=--25C

10

, DC CURRENT GAIN

FE

h

504020100

1

A

75C

25C

100101

IC, COLLECTOR CURRENT (mA)

Figure 33. DC Current Gain

100

75C

10

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001

1

T

A

25C

=--25C

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

VO=5V

6543210

10987

Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage

10

T

=--25C

A

1

, INPUT VOLTAGE (VOLTS) V

75C

in

0.1

25C

3020100

VO=0.2V

40 50

IC, COLLECTOR CURRENT (mA)

Figure 36. Input Voltage versus Output Current

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12

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233T1G

, COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

, CAPACITANCE (pF)

ob

C

0.1

0.01

0.001

4

3.5

3

2.5

2

1.5

1

0.5

0

1

IC/IB=10

5

75C

-- 2 5 C 25C

20

I

, COLLECTOR CURRENT (mA)

C

Figure 37. V

CE(sat)

versus I

3525155

C

f=1MHz I

=0V

E

T

=25C

A

45 50403020100

1000

VCE=10V

75C

T

=--25C

100

10

, DC CURRENT GAIN

FE

h

302515100

1

A

25C

100101

IC, COLLECTOR CURRENT (mA)

Figure 38. DC Current Gain

100

75C

10

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001

1

T

A

25C

=--25C

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

VO=5V

6543210

10987

Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage

10

T

=--25C

A

1

, INPUT VOLTAGE (VOLTS) V

75C

in

0.1

25C

151050

VO=0.2V

20 25

IC, COLLECTOR CURRENT (mA)

Figure 41. Input Voltage versus Output Current

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13

MUN5211T1G Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G

, COLLECTOR VOLTAGE (VOLTS)

CE(sat)

V

, CAPACITANCE (pF)

ob

C

0.1

0.01

0.001

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

1

IC/IB=10

75C

-- 2 5 C

25C

30

I

, COLLECTOR CURRENT (mA)

C

Figure 42. V

CE(sat)

versus I

3525155

C

f=1MHz I

=0V

E

T

=25C

A

45 50403020100

1000

VCE=10V

75C

100

10

, DC CURRENT GAIN

FE

h

504020100

1

T

A

=--25C

25C

100101

IC, COLLECTOR CURRENT (mA)

Figure 43. DC Current Gain

100

25C

10

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001

1

T

A

75C

=--25C

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

VO=5V

6543210

10987

Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage

10

75C

, INPUT VOLTAGE (VOLTS) V

in

0.1

1

25C

T

A

=--25C

3020100

VO=0.2V

40 50

IC, COLLECTOR CURRENT (mA)

Figure 46. Input Voltage versus Output Current

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14

MUN5211T1G Series

V

TYPICAL APPLICATIONS FOR NPN BRTs

+12

FROM mPOR

OTHER LOGIC

Figure 47. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

ISOLATED

LOAD

V

CC

OUT

IN

Figure 48. Open Collector Inverter:

Inverts the Input Signal

+12 V

LOAD

Figure 49. Inexpensive, Unregulated Current Source

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15

0.05 (0.002)

D

e1

3

H

E

12

e

A1

MUN5211T1G Series

PACKAGE DIMENSIONS

SC--70 (SOT--323)

CASE 419--04

ISSUE N

E

b

A

A2

L

SOLDERING FOOTPRINT*

0.65

0.025

NOTES:

1. DIMENS IONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MA X MIN

A1 0.00 0.05 0.10 0.000 A2 0.70 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

e1

L

H

E

STYLE 3:

c

PIN 1. BASE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.38

0.20 0.56

2.00 2.10 2.40 0.079 0.083 0.095

2. EMITTER

3. COLLEC TOR

0.65

0.025

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.015

0.008 0.022

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1



inches

mm



*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MUN5211T1/D