Page 1
MUN5111T1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
= 25°C unless otherwise noted)
A
CBO
CEO
C
P
D
R
q
JA
R
q
JL
TJ, T
stg
50 Vdc
50 Vdc
100 mAdc
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
−55 to +150 °C
mW
°C/W
°C/W
°C/W
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PNP SILICON
BIAS RESISTOR
TRANSISTORS
PIN 3
PIN 1
BASE
(INPUT)
R
1
R
2
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
6x M G
6x = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
G
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 10
1 Publication Order Number:
MUN5111T1/D
Page 2
MUN5111T1 Series
ORDERING INFORMATION AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5111T1G SC−70/SOT−323
(Pb−Free)
MUN5112T1G SC−70/SOT−323
(Pb−Free)
MUN5113T1G SC−70/SOT−323
(Pb−Free)
MUN5113T3G SC−70/SOT−323
(Pb−Free)
MUN5113T1G SC−70/SOT−323
(Pb−Free)
MUN5114T1G SC−70/SOT−323
(Pb−Free)
MUN5115T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5116T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5130T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5131T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5132T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5133T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5134T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5135T1G (Note 3) SC−70/SOT−323
(Pb−Free)
MUN5136T1G SC−70/SOT−323
(Pb−Free)
MUN5137T1G SC−70/SOT−323
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
6A 10 10 3000/Tape & Reel
6B 22 22 3000/Tape & Reel
6C 47 47 3000/Tape & Reel
6C 47 47 10,000/Tape & Reel
6C 47 47 3000/Tape & Reel
6D 10 47 3000/Tape & Reel
6E 10 ∞ 3000/Tape & Reel
6F 4.7 ∞ 3000/Tape & Reel
6G 1.0 1.0 3000/Tape & Reel
6H 2.2 2.2 3000/Tape & Reel
6J 4.7 4.7 3000/Tape & Reel
6K 4.7 47 3000/Tape & Reel
6L 22 47 3000/Tape & Reel
6M 2.2 47 3000/Tape & Reel
6N 100 100 3000/Tape & Reel
6P 47 22 3000/Tape & Reel
†
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2
Page 3
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current MUN5111T1
(VEB = 6.0 V, IC = 0) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN5111T1
(VCE = 10 V, IC = 5.0 mA) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN5113T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN5136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN5137T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Symbol Min Typ Max Unit
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
h
V
CE(sat)
V
FE
OL
− − 100 nAdc
− − 500 nAdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
50 − − Vdc
50 − − Vdc
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
− − 0.25 Vdc
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
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Page 4
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5115T1
Input Resistor
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5116T1
MUN5131T1
MUN5132T1
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
MUN5114T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
Symbol Min Typ Max Unit
V
OH
R1
R1/R
2
4.9 − − Vdc
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
kW
250
200
150
100
R
= 833°C/W
q
50
, POWER DISSIPATION (MILLIWATTS)
D
P
0
-50 0 50 100 150
JA
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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Page 5
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
1
IC/IB = 10
0.1
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.01
CE(sat)
V
0 40
4
3
2
20
IC, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
TA=-25°C
75°C
versus I
C
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
, DC CURRENT GAIN (NORMALIZED)
FE
50
1000
100
10
1 10 100
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
Figure 3. DC Current Gain
100
75°C
10
1
25°C
TA=-25°C
25°C
-25°C
, CAPACITANCE (pF)
ob
1
C
0
010203040
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
, INPUT VOLTAGE (VOLTS)
in
V
0.1
0
10 20 30 40 50
0.1
, COLLECTOR CURRENT (mA) h
C
0.01
I
0.001
50
IC, COLLECTOR CURRENT (mA)
0
TA=-25°C
75°C
VO = 5 V
1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
25°C
Figure 6. Input Voltage versus Output Current
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Page 6
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1
10
IC/IB = 10
1
TA=-25°C
0.1
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.01
CE(sat)
V
0 20 50
IC, COLLECTOR CURRENT (mA)
Figure 7. V
4
3
2
CE(sat)
versus I
40
C
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
1000
100
, DC CURRENT GAIN (NORMALIZED)
FE
10
1
100
75°C
10
1
10
, COLLECTOR CURRENT (mA)
I
C
Figure 8. DC Current Gain
25°C
TA=-25°C
VCE = 10 V
TA=75°C
25°C
-25°C
100
, CAPACITANCE (pF)
ob
1
C
0
010203040
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
, INPUT VOLTAGE (VOLTS)
in
V
100
10
0.1
VO = 0.2 V
1
0 10 20 30
0.1
, COLLECTOR CURRENT (mA) h
C
I
0.01
0.001
50
0 1 2 3 4
Figure 10. Output Current versus Input Voltage
TA=-25°C
25°C
75°C
IC, COLLECTOR CURRENT (mA)
VO = 5 V
5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
40 50
Figure 11. Input Voltage versus Output Current
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Page 7
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1
1
IC/IB = 10
TA=-25°C
0.1
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.01
CE(sat)
V
010203040
IC, COLLECTOR CURRENT (mA)
Figure 12. V
1
0.8
0.6
CE(sat)
versus I
25°C
75°C
C
f = 1 MHz
lE = 0 V
TA = 25°C
1000
TA=75°C
100
, DC CURRENT GAIN (NORMALIZED)
FE
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
10
1
TA=75°C
25°C
-25°C
25°C
-25°C
0.4
, CAPACITANCE (pF)
ob
C
0.2
0
010203040
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
TA=-25°C
10
1
, INPUT VOLTAGE (VOLTS)
in
V
0.1
0 10 20 30 40
0.1
0.01
, COLLECTOR CURRENT (mA) h
C
I
0.001
50
75°C
IC, COLLECTOR CURRENT (mA)
010
25°C
VO = 5 V
123456 789
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
50
Figure 16. Input Voltage versus Output Current
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Page 8
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
1
IC/IB = 10
0.1
0.01
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
CE(sat)
0.001
V
020406080
IC, COLLECTOR CURRENT (mA)
Figure 17. V
4.5
4
3.5
3
2.5
2
1.5
, CAPACITANCE (pF)
ob
C
1
0.5
0
0 2 4 6 8 101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
CE(sat)
TA=-25°C
75°C
versus I
25°C
C
f = 1 MHz
lE = 0 V
TA = 25°C
180
VCE = 10 V
160
140
120
100
80
60
40
, DC CURRENT GAIN (NORMALIZED)
20
FE
0
1 10 100
2 4 6 8 15 20 40 50 60 70 80 90
IC, COLLECTOR CURRENT (mA)
-25°C
TA=75°C
25°C
Figure 18. DC Current Gain
100
TA=75°C
-25°C
10
, COLLECTOR CURRENT (mA) h
C
I
1
0 246 810
Vin, INPUT VOLTAGE (VOLTS)
25°C
VO = 5 V
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
75°C
1
, INPUT VOLTAGE (VOLTS)
in
V
0.1
010 20 30 4050
IC, COLLECTOR CURRENT (mA)
25°C
TA=-25°C
Figure 21. Input Voltage versus Output Current
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+12 V
Typical Application
for PNP BRTs
LOAD
Figure 22. Inexpensive, Unregulated Current Source
8
Page 9
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
1
0.1
, MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
CE(sat)
V
0.01
10
9
8
7
6
5
4
, CAPACITANCE (pF)
3
ob
C
2
1
0
75°C
25°C
−25°C
IC, COLLECTOR CURRENT (mA)
Figure 23. Maximum Collector Voltage versus
Collector Current
6050403020100
1000
100
10
, DC CURRENT GAIN
FE
h
35302520151050
1
100
10
1
0.1
, COLLECTOR CURRENT (mA)
C
I
0.01
40 60 80 100
IC, COLLECTOR CURRENT (mA)
Figure 24. DC Current Gain
75°C
−25°C
25°C
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
6543210
75°C
−25°C
25°C
120200
10987
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
10
−25°C
25°C
75°C
IC, OUTPUT CURRENT (mA)
302520151050
454035 50
, INPUT VOLTAGE (VOLTS)
in
V
0.1
1
Figure 27. Input Voltage versus Output Current
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Page 10
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1
1
0.1
0.01
, COLLECTOR VOLTAGE (VOLTS)
CE(sat)
0.001
V
0
8
7
6
5
4
3
, CAPACITANCE (pF)
ob
2
C
1
0
IC/IB = 10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 28. V
CE(sat)
25°C
30
versus I
3525155
C
f = 1 MHz
lE = 0 V
TA = 25°C
45 50403020100
75°C
1000
100
10
, DC CURRENT GAIN
FE
h
504020
1
100
75°C
10
1
0.1
0.01
, COLLECTOR CURRENT (mA)
C
I
0.001
75°C
TA = −25°C
IC, COLLECTOR CURRENT (mA)
Figure 29. DC Current Gain
25°C
TA = −25°C
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
6543210
VCE = 10 V
25°C
100101
VO = 5 V
10987
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
10
TA = −25°C
1
25°C
VO = 0.2 V
3020100
IC, COLLECTOR CURRENT (mA)
40 50
, INPUT VOLTAGE (VOLTS)
in
V
0.1
75°C
Figure 32. Input Voltage versus Output Current
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MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
, MAXIMUM COLLECTOR
CE(sat)
V
1
0.1
VOLTAGE (VOLTS)
0.01
IC, COLLECTOR CURRENT (mA)
−25°C
Figure 33. Maximum Collector Voltage versus
Collector Current
1.2
1.0
0.8
0.6
25°C
IC/IB = 10
f = 1 MHz
IE = 0 V
TA = 25°C
75°C
1000
75°C
100
10
, DC CURRENT GAIN (NORMALIZED)
FE
1
h
76543210
TA = −25°C
IC, COLLECTOR CURRENT (mA)
Figure 34. DC Current Gain
100
25°C
10
25°C
VCE = 10 V
100101
75°C
TA = −25°C
0.4
, CAPACITANCE (pF)
ob
C
0.2
0
1
, COLLECTOR CURRENT (mA)
C
I
6050403020100
0.1
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
6543210
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
100
TA = −25°C
121086420
VO = 0.2 V
181614 20
, INPUT VOLTAGE (VOLTS)
in
V
10
25°C
75°C
1
IC, COLLECTOR CURRENT (mA)
10987
Figure 37. Input Voltage versus Output Current
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MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
, MAXIMUM COLLECTOR
CE(sat)
V
1
TA = −25°C
0.1
VOLTAGE (VOLTS)
25°C
0.01
IC, COLLECTOR CURRENT (mA)
Figure 38. Maximum Collector Voltage versus
Collector Current
1.4
1.2
1.0
0.8
75°C
IC/IB = 10
35302520151050
f = 1 MHz
IE = 0 V
TA = 25°C
1000
100
, DC CURRENT GAIN (NORMALIZED)
FE
10
h
504540
IC, COLLECTOR CURRENT (mA)
Figure 39. DC Current Gain
100
10
1
75°C
TA = −25°C
25°C
VCE = 10 V
100101
75°C
TA = −25°C
25°C
0.6
, CAPACITANCE (pF)
0.4
ob
C
0.2
0
0.1
0.01
, COLLECTOR CURRENT (mA)
C
I
0.001
6050403020100
6543210
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
10
Figure 40. Output Capacitance Figure 41. Output Current versus Input Voltage
100
VO = 0.2 V
TA = −25°C
75°C
151050
20 25
, INPUT VOLTAGE (VOLTS)
in
V
10
25°C
1
IC, COLLECTOR CURRENT (mA)
11987
Figure 42. Input Voltage versus Output Current
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Page 13
MUN5111T1 Series
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE N
0.05 (0.002)
D
e1
3
H
E
12
e
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIMAMIN NOM MAX MIN
E
b
A
A2
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
e1
L
H
E
STYLE 3:
c
MILLIMETERS
0.80 0.90 1.00 0.032
0.65 BSC
0.38
0.20 0.56
2.00 2.10 2.40 0.079 0.083 0.095
PIN 1. BASE
2. EMITTER
3. COLLECT OR
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.028 REF
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
0.026 BSC
0.015
0.008 0.022
L
SOLDERING FOOTPRINT*
0.65
0.65
0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
ǒ
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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13
MUN5111T1/D
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