Page 1
MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
MTP 6N60 600 V < 1. 2 Ω 6.8 A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
=1Ω
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS= 0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ) 600 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC6.8A
I
D
Drain Current (continuous) at Tc=100oC4.2A
I
D
(•) Drain Current (pulsed) 30 A
Total D i ssipation at Tc=25oC 125 W
tot
Derating Factor 1 W/
St or a ge Tem perature -65 to 150
stg
Max. Operating Junctio n Temperatur e 150
T
j
o
C
o
C
o
C
1/9
Page 2
MTP6N60
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction -c as e Max
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
1
62.5
0.5
300
6.8 A
460 mJ
21 mJ
4.2 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 600 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max R ating x 0.8 Tc=125oC
DS
25
250
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold V oltage VDS=VGSID=1mA 23.14.5V
St at ic Drain-s our ce O n
VGS=10V ID=3A 1 1.2 Ω
Resistance
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
6.8 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 2 4.8 S
VDS=25V f=1MHz VGS= 0 1150
160
75
1500
240
110
µA
µA
pF
pF
pF
2/9
Page 3
MTP6N60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=480V ID=6A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=300V ID=3A
RG=50 Ω VGS=10V
50
14065175
(see test circuit, figure 3)
240 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 480 V ID=6A VGS=10V 78
8
41
VDD=480V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
100
27
145
98 nC
125
34
180
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
3.8
24
(pulsed)
V
(∗) For w ar d On Volt age ISD=6A VGS=0 2 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
750
13.5
Charge
I
RRM
Reverse Recovery
38
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/9
Page 4
MTP6N60
Derating Curve
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
4/9
Gate Charge vs Gate-source Voltage
Page 5
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
MTP6N60
Cross-over TimeTurn-off Drain-source Voltage Slope
5/9
Page 6
MTP6N60
Switching SafeOperating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
6/9
Page 7
MTP6N60
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge Test Circuit
7/9
Page 8
MTP6N60
ISOWATT220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
Ø
F1
F
G1
H
G
F2
123
L2
L4
P011G
8/9
Page 9
MTP6N60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third partieswhich may resultsfrom its use.No
licenseis granted by implicationor otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication aresubject tochange withoutnotice. This publicationsupersedes and replaces allinformation previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as criticalcomponents in lifesupport devices or systemswithout express
writtenapproval of SGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved
Australia- Brazil - Canada -China - France- Germany - HongKong- Italy- Japan- Korea- Malaysia - Malta - Morocco - The Netherlands-
Singapore - Spain- Sweden- Switzerland- Taiwan- Thailand- United Kingdom - U.S.A
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
.
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