Datasheet MTP3N60FI, MTP3N60 Datasheet (SGS Thomson Microelectronics)

MTP3N60

MTP3N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

MTP 3N60
MTP 3N60FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ APPLICATION ORIENTED

DS(on)

DSS

600 V
600 V

=2Ω

R

DS(on)

<2.5Ω
<2.5Ω

I

D

3.9 A

2.5 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

MTP3N60 MTP3N60FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 600 V

DS

Drain- gate Voltage (RGS=20kΩ)600V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC3.92.5A

I

D

Drain Current (continuous) at Tc=100oC2.4 1.5A

I

D

(•) Drain Current (pulsed) 14 14 A

Total D i ssipation at Tc=25oC 100 35 W

tot

Derat ing Factor 0.8 0.28 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 to 150

stg

Max. Operating Junctio n Temperatur e 150

T

j

o
o

o

C

C
C

1/10

MTP3N60/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Res istance Junction -c as e M ax 1.25 3.57
Thermal Resis tance Junction- ambient Max

Thermal Res istance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

62.5

0.5

300

3.9 A

300 mJ

7.7 mJ

2.4 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 600 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold V oltage VDS=VGSID=1mA 2 3 4.5 V
St at ic Drain-s our ce O n

VGS=10V ID=1.5A 2 2.5 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

3.9 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1.5 2.6 S

VDS=25V f=1MHz VGS=0 560

90
40

800
130

55

µA
µA

pF
pF
pF

2/10

MTP3N60/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=480V ID=4A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=225V ID=2.5A
RG=15 Ω VGS=10V

45
33

(see test circuit, figure 3)

200 A/µs
RG=15 Ω VGS=10V
(see test circuit, figure 5)

VDD= 480 V ID=4A VGS=10V 43

6

21

VDD=480V ID=4A
RG=15 Ω VGS=10V
(see test circuit, figure 5)

35
40
60

60
42

55 nC

45
55
75

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

3.9
14

(pulsed)

V

(∗) For w ar d On Volt age ISD=3.9A VGS=0 2 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=4A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

420

3.7

Charge

I

RRM

Reverse Recovery

18

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

MTP3N60/FI

Thermal Impedeance For TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

MTP3N60/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

MTP3N60/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

6/10

MTP3N60/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

MTP3N60/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

MTP3N60/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

MTP3N60/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may results from its use.No
licenseis granted by implicationor otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication aresubject tochange withoutnotice. This publicationsupersedes and replaces allinformation previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systemswithout express
writtenapproval of SGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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