Datasheet MTP3J15N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

50V P-CHANNEL Enhancement Mode MOSFET

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 1/ 8

MTP3J15N3

ID -130mA
RDSON@VGS=-10V, ID=-100mA

RDSON@VGS=-5V, ID=-100mA

Features

BVDSS -50V

Low gate charge

•

Excellent thermal and electrical capabilities

•

Pb-free package

•

Equivalent Circuit Outline

MTP3J15N3

4.5Ω(typ)
6Ω(typ)

SOT-23

D

G：Gate
S：Source
D：Drain

G

S

Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)

Parameter
Drain-Source Voltage VDS -50 V
Gate-Source Voltage VGS ±20 V

Continuous Drain Current @ TA=25°C, VGS=-5V
Pulsed Drain Current (Note 1) IDM -520 mA

Maximum Power Dissipation @ TA=25℃

Thermal Resistance, Junction-to-Ambient Rth,ja 556

Maximum Lead Temperature for Soldering Purpose, 10 s TL 260
Operating Junction and Storage Temperature Tj, Tstg -55~+150

Note : 1. Pulse width≤ 10μs, duty cycle≤2%.

Symbol

ID -130 mA

P

D 225 mW

Limits Unit

°C/W

°C
°C

MTP3J15N3 CYStek Product Specification

CYStech Electronics Corp.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV
V

*R

Dynamic

*t

*t

Source-Drain Diode

-50 - - V VGS=0V, ID=-250μA

DSS

-1 -1.4 -2 V VDS=VGS, ID=-1mA

GS(th)

GFS 100 - - mS VDS=-15V, ID=-100mA
I

- -

GSS

10

μA

VGS=±20V, VDS=0

±

- - -0.1 VDS=-25V, VGS=0

I

DSS

DS(ON)

- - -1 VDS=-50V, VGS=0

- - -25

- 6 10 VGS=-5V, ID=-100mA

- 5 8

μA

Ω

=-50V, VGS=0, Tj=125°C

V

DS

VGS=-10V, ID=-100mA

Ciss - 25 -

Coss - 7 -

pF VDS=-5V, VGS=0, f=1MHz

Crss - 2 -

- 2.5 -

d(ON)

*tr - 2 -

- 7.3 -

d(OFF)

ns

VDS=-15V, ID=-100mA, VGS=-5V,
RG=3.3Ω

*tf - 3 -

*Qg - 1.2 - nC VDS=-40V, ID=-500mA, VGS=-5V

*IS - - -130

*ISM - - -520

mA

*VSD - -0.85 -1.2 V VGS=0V, IS=-130mA

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 2/ 8

Ordering Information

Device Package Shipping Marking

MTP3J15N3

SOT-23

(Pb-free)

3000 pcs / Tape & Reel PD

MTP3J15N3 CYStek Product Specification

CYStech Electronics Corp.

GS

Typical Characteristics

Typical Output Characteristics

600

500

400

300

, Drain Current (mA)

200

D

-I

100

0

012345678910

, Drain-Source Voltage(V)

-V

DS

-VGS=5V

-VGS=4.5V

-VGS=4V

-VGS=3.5V

-VGS=3V

-VGS=2.5V

-VGS=2V

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 3/ 8

Brekdown Voltage vs Ambient Temperature

1.4

1.2

1

, Normal iz ed Dra in-Sourc e

Breakdown Voltage

DSS

0.8

-BV

0.6

-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)

ID=-250μA,
V

=0V

Static Drain-Source On-State resistance vs Drain Current

12

11

10

9

8

7

Resistance(Ω)

, Static Drain-Source On-State

6

DS (on)

R

5

4

0.001 0.01 0.1 1

-VGS=3V

-VGS=5V

-VGS=10V

D

, Drain Current(A)

-I

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

20

18

16

14

12

ID=-100mA
I

=-30mA

D

, Static Drain-Source On-

R

DS( ON)

State Resistance(Ω)

10

8

6

4

2

0

024681

-V

, Gate-Source Voltage(V)

GS

, Source-Drain Voltage(V)

SD

-V

, Normalized Static Drain-

DS( ON)

R

0

Reverse Drain Current vs Source-Drain Voltage

1.2

VGS=0V

1

Tj=25°C

0.8

0.6

Tj=150°C

0.4

0.2
0 0.1 0.2 0.3 0.4 0.5

, Reverse Drain Current (A)

-I

DR

Drain-Source On-State Resistance vs Junction Tempearture

2

1.8

1.6

1.4

VGS=-5V, ID=-100mA

1.2

1

0.8

Source On-State Resistance

0.6

VGS=-10V, ID=-100mA

0.4

-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)

MTP3J15N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 4/ 8

Capacitance vs Drain-to-Source Voltage

100

Ciss

10

Capacitance---(pF)

1

0.1 1 10 100

-V

, Drain-Source Voltage(V)

DS

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

20

16

12

T

J( MAX)

T

A

θJA

R

=25°C

C

oss

Crss

=150°C

=556°C/W

Threshold Voltage vs Junction Tempearture

1.6

1.4

1.2

1

0.8

, Normalized Threshold Voltage

0.6

GS( th)

-V

0.4

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

VDS=-40V

8

I

=-500mA

D

6

ID=-250μA

Power (W)

8

4

0

0.001 0.01 0.1 1 10 100
Pulse Width(s)

Maximum Safe Operating Area

1

0.1

, Drain Current (A)

0.01

D

-I

0.001

TA=25°C, Tj=150°C,

=-5V, R

θ

=556°C/W

JA

V

GS

Single Pulse

0.01 0.1 1 10 100
, Drain-Source Voltage(V)

-V

DS

1ms

10ms

100m

DC

100μs

1s

, Maximum Drain Current(A)

D

-I

, Gate-Source Voltage(V)

GS

-V

4

2

0

0 0.6 1.2 1.8 2.4 3 3.6

Qg, Total Gate Charge(nC)

Maximum Drain Current vs JunctionTemperature

0.16

0.14

0.12

0.1

0.08

0.06

0.04

0.02

TA=25°C, VGS=-5V

0

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

MTP3J15N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 5/ 8

Typical Transfer Characteristics

600

-VDS=10V

500

400

300

200

, Drain Current (mA)

D

-I
100

0

0123456

, Gate-Source Voltage(V)

-V

GS

Transient Thermal Response Curves

1

D=0. 5

0.2

0.1

0.1

0.05

0.02

Power Derating Curve

0.25

0.2

0.15

0.1

, Power Dissipation(W)

D

P

0.05

0

0 20 40 60 80 100 120 140 160

, Ambient Temperature(℃)

T

A

JA

1.R

(t)= r(t)*R

θ

2.Duty Factor, D=t1/t

3.TJM-TC=PDM*Z

4.R

θJA

=556

°C/W

θJA

2

JC

(t)

θ

0.01

0.01

Normalized Transient Thermal Resistance

0.001

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1. E+01 1.E+02 1.E+03

Single Pulse

t

, Square Wave Pulse Duration(s)

1

MTP3J15N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 6/ 8

Carrier Tape Dimension

MTP3J15N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 7/ 8

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

−Temperature Max(T

S min)

S max)

−Time(ts min to ts max)
Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

MTP3J15N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 8/ 8

Marking:

DIM

A

L

3

S

B

1

V

C

D

G

Inches

2

H

K

Millimeters Inches Millimeters

Min. Max. Min. Max.

J

DIM

Style: Pin 1.Gate 2.Source 3.Drain

Min. Max. Min. Max.

TE

PD

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*: Typical

A 0.1102 0.1204 2.80 3.04 J 0.0032 0.0079 0.08 0.20
B 0.0472 0.0669 1.20 1.70 K 0.0118 0.0266 0.30 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0000 0.0040 0.00 0.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTP3J15N3 CYStek Product Specification