Static Drain-Source On-State resistance vs Drain Current
1000
-V
Drain-Source Voltage(V)
,
DS
CYStech Electronics Corp.
Brekdown Voltage vs Ambient Temperature
30
28
26
-VGS=1.8V
-VGS=1.5V
(V)
24
, Drain-Source Breakdown Voltage
22
DSS
-BV
20
-75 -50 -250255075 100 125 150 175
Reverse Drain Current vs Source-Drain Voltage
1.2
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 3/8
Tj, Junction Temperature(°C)
ID=-250μA,
=0V
V
100
VGS=-1.8V
VGS=-2.5V
VGS=0V
1
0.8
Tj=25°C
Tj=150°C
0.6
Resistance(mΩ)
, Static Drain-Source On-State
DS (on)
R
VGS=-4.5V
10
0.0010.010.1110
D
, Drain Curre nt(A)
-I
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
, Static Drain-Source On-
DS( ON)
R
State Resistance(mΩ)
100
80
60
40
ID=-4.3A
=-2.5A
I
D
=-0.2A
I
D
20
0
024681
-V
, Gate-Source Voltage(V)
GS
VGS=-10V
0
, Source-Drain Voltage(V)
SD
0.4
-V
0.2
024681
, Reverse Drain Current (A)
-I
Drain-Source On-State Resistance vs Junction Tempearture
DR
0
100
90
80
VGS=-1.8V, ID=-2A
VGS=-2.5V, ID=-2.5A
70
60
50
Resistance(mΩ)
, Static Drain-Source On-State
40
DS( ON)
30
R
VGS=-4.5V, ID=-4.3A
20
-60-202060100140180
Tj, Junction Temperature(°C)
MTP3413N3 CYStek Product Specification
Page 4
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
1000
Ciss
0.8
0.7
0.6
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 4/8
Threshold Voltage vs Junction Tempearture
ID=-250μA
100
Capacitance---(pF)
Crss
10
0.1110100
, Drain-Source Voltage(V)
-V
DS
Forward Transfer Admittance vs Drain Current
10
1
0.1
, Forward Transfer Admittance-(S)
FS
G
0.01
0.0010.010.1110
-I
, Drain Current(A)
D
C
oss
VDS=-10V
Pulsed
Ta=25°C
0.5
,Threshold Voltage-(V)
0.4
GS( th)
-V
0.3
0.2
-60 -40 -20 020 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
VDS=-10V
, Gate-Source Voltage(V)
GS
-V
6
4
2
0
=-4.3A
I
D
024681012141618
Qg, Total Gate C harge(nC)
100
10
Maximum Safe Operating Area
10μs
100μs
Maximum Drain Current vs JunctionTemperature
6
5
4
1ms
1
, Drain Current (A)
D
-I
0.1
TA=25°C, Tj=150°C
=-4.5V
V
GS
Single Pulse
0.01
0.010.1110100
-V
, Drain-Source Voltage(V)
DS
10ms
100ms
DC
3
2
, Maximum Drain Current(A)
1
D
I
TA=25°C, VGS=-4.5V
0
255075100125150175
Tj, Junction Temperature(°C)
MTP3413N3 CYStek Product Specification
Page 5
CYStech Electronics Corp.
p
Typical Characteristics(Cont.)
Power Derating Curve
1.6
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 5/8
1.4
1.2
1
0.8
0.6
, Power Dissipation(W)
D
0.4
P
0.2
0
020406080100120140160
T
1
D=0.5
0.2
0.1
0.1
Resistance
0.05
Mounted on FR-4 board
with 1 in²
, Ambient Temperature(℃)
A
ad area
Transient Thermal Response Curves
JA
1.R
(t)=r(t)*R
θ
2.Duty Factor, D=t1/t
3.TJM-TA=PDM*R
4.R
θJA
=270
°C/W
θJA
2
JA
(t)
θ
0.02
0.01
r(t), Norma lized Effec tiveTra nsient The rmal
Single Pulse
0.01
1.E-041.E-031.E-021.E-011.E+001.E+011.E+02
t
, Square Wave Pulse Duration(s)
1
MTP3413N3 CYStek Product Specification
Page 6
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 6/8
Carrier Tape Dimension
MTP3413N3 CYStek Product Specification
Page 7
CYStech Electronics Corp.
Recommended wave soldering condition
Product Peak Temperature Soldering Time
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 7/8
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
5 +1/-1 seconds
Profile feature Sn-Pb eutectic Assembly
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(T
S min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
3°C/second max. 3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C 260 +0/-5 °C
10-30 seconds 20-40 seconds
6°C/second max. 6°C/second max.
6 minutes max. 8 minutes max.
Pb-free Assembly
150°C
200°C
60-180 seconds
217°C
60-150 seconds
MTP3413N3 CYStek Product Specification
Page 8
SOT-23 Dimension
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 8/8
Marking:
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
DIM
A
L
3
S
B
1
V
D
G
Inches
2
H
K
Millimeters Inches Millimeters
Min. Max. Min. Max.
J
DIM
Style: Pin 1.Gate 2.Source 3.Drain
Min. Max. Min. Max.
A 0.1102 0.12042.80 3.04 J 0.00320.0079 0.08 0.20
B 0.0472 0.06691.20 1.70 K 0.01180.0266 0.30 0.67
C 0.0335 0.05120.89 1.30 L 0.03350.0453 0.85 1.15
D 0.0118 0.01970.30 0.50 S 0.08300.1161 2.10 2.95