Datasheet MTP3403AN3, MTP3413N3 Datasheet (CYStech)

CYStech Electronics Corp.

P-Channel Logic Level Enhancement Mode MOSFET

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 1/8

MTP3413N3

Features

1.8V gate rated

•

Advanced trench process technology

•

High density cell design for ultra low on resistance

•

Pb-free lead plating and halogen-free package

•

Equivalent Circuit Outline

MTP3413N3

BVDSS -20V ID -4.9A

RDSON(TYP)

VGS=-4.5V, ID=-4.3A VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-2A

SOT-23

D

39mΩ 50mΩ 65mΩ

G：Gate S：Source D：Drain

G

S

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V

Continuous Drain Current @TC=25°C Continuous Drain Current @TC=100°C Pulsed Drain Current (Note 1&2) IDM -35 A Maximum Power Dissipation @TA=25°C

Maximum Power Dissipation @TA=70°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150

Note : 1. Pulse width limited by maximum junction temperature.

ID -4.9 A ID -3.1 A

PD

1.38 W

0.88

°C

2. Pulse width≤300μs, duty cycle≤2%

MTP3413N3 CYStek Product Specification

Spec. No. : C394N3

CYStech Electronics Corp.

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance, Junction-to-Ambient (Note) Rth,ja 90

Issued Date : 2012.01.19 Revised Date : Page No. : 2/8

°C/W

Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV V

-20 - - V VGS=0, ID=-250µA

DSS

-0.4 -0.6 -0.95 V VDS=VGS, ID=-250µA

GS(th)

I

- - ±100 nA VGS=±8V, VDS=0

GSS

I

DSS

- - -1 µA VDS=-20V, VGS=0

- - -10 µA VDS=-20V, VGS=0, Tj=55°C

- 39 50 VGS=-4.5V, ID=-4.3A

*R

DS(ON)

- 50 60 VGS=-2.5V, ID=-2.5A

- 65 75

mΩ

VGS=-1.8V, ID=-2.0A

Dynamic

Ciss - 1220 -

Coss - 103 -

pF VDS=-10V, VGS=0, f=1MHz

Crss - 92 -

*t

- 12.5 -

d(ON)

*tr - 12 -

- 70 -

d(OFF)

ns

VDS=-10V, ID=-1A, VGS=-4.5V, RD=10Ω,

=6Ω

R

G

*tf - 20 -

*Qg - 10 -

*Qgs - 1.9 -

nC VDS=-10V, ID=-4.3A, VGS=-4.5V

*Qgd - 2.7 -

Source-Drain Diode

*ISD - - -1.3 *ISM - - -35

A

*VSD - -0.76 -1 V VGS=0V, IS=-1.3A

*trr - 23 - ns

*Qrr - 8.5 - nC

IS=-1.3A, VGS=0V, dI/dt=100A/µs

*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%

Ordering Information

Device Package Shipping

MTP3413N3

(Pb-free lead plating and halogen-free package)

SOT-23

3000 pcs / Tape & Reel

MTP3413N3 CYStek Product Specification

V

GS

Typical Characteristics

Typical Output Characteristics

20

5V

4.5 4V

15

3.5 3V

2.5

10

Drain Current (A)

,

D

-I 5

0

012345

Static Drain-Source On-State resistance vs Drain Current

1000

-V

Drain-Source Voltage(V)

,

DS

CYStech Electronics Corp.

Brekdown Voltage vs Ambient Temperature

30

28

26

-VGS=1.8V

-VGS=1.5V

(V)

24

, Drain-Source Breakdown Voltage

22

DSS

-BV

20

-75 -50 -25 0 25 50 75 100 125 150 175

Reverse Drain Current vs Source-Drain Voltage

1.2

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 3/8

Tj, Junction Temperature(°C)

ID=-250μA,

=0V

V

100

VGS=-1.8V

VGS=-2.5V

VGS=0V

1

0.8

Tj=25°C

Tj=150°C

0.6

Resistance(mΩ)

, Static Drain-Source On-State

DS (on)

R

VGS=-4.5V

10

0.001 0.01 0.1 1 10

D

, Drain Curre nt(A)

-I

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

180

160

140

120

, Static Drain-Source On-

DS( ON)

R

State Resistance(mΩ)

100

80

60

40

ID=-4.3A

=-2.5A

I

D

=-0.2A

I

D

20

0

024681

-V

, Gate-Source Voltage(V)

GS

VGS=-10V

0

, Source-Drain Voltage(V)

SD

0.4

-V

0.2 024681

, Reverse Drain Current (A)

-I

Drain-Source On-State Resistance vs Junction Tempearture

DR

0

100

90

80

VGS=-1.8V, ID=-2A

VGS=-2.5V, ID=-2.5A

70

60

50

Resistance(mΩ)

, Static Drain-Source On-State

40

DS( ON)

30

R

VGS=-4.5V, ID=-4.3A

20

-60 -20 20 60 100 140 180 Tj, Junction Temperature(°C)

MTP3413N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10000

1000

Ciss

0.8

0.7

0.6

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 4/8

Threshold Voltage vs Junction Tempearture

ID=-250μA

100

Capacitance---(pF)

Crss

10

0.1 1 10 100 , Drain-Source Voltage(V)

-V

DS

Forward Transfer Admittance vs Drain Current

10

1

0.1

, Forward Transfer Admittance-(S)

FS

G

0.01

0.001 0.01 0.1 1 10

-I

, Drain Current(A)

D

C

oss

VDS=-10V Pulsed Ta=25°C

0.5

,Threshold Voltage-(V)

0.4

GS( th)

-V

0.3

0.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

8

VDS=-10V

, Gate-Source Voltage(V)

GS

-V

6

4

2

0

=-4.3A

I

D

0 2 4 6 8 10 12 14 16 18

Qg, Total Gate C harge(nC)

100

10

Maximum Safe Operating Area

10μs

100μs

Maximum Drain Current vs JunctionTemperature

6

5

4

1ms

1

, Drain Current (A)

D

-I

0.1

TA=25°C, Tj=150°C

=-4.5V

V

GS

Single Pulse

0.01

0.01 0.1 1 10 100

-V

, Drain-Source Voltage(V)

DS

10ms

100ms

DC

3

2

, Maximum Drain Current(A)

1

D

I

TA=25°C, VGS=-4.5V

0

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

MTP3413N3 CYStek Product Specification

CYStech Electronics Corp.

p

Typical Characteristics(Cont.)

Power Derating Curve

1.6

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 5/8

1.4

1.2

1

0.8

0.6

, Power Dissipation(W)

D

0.4

P

0.2

0

0 20 40 60 80 100 120 140 160

T

1

D=0.5

0.2

0.1

Resistance

0.05

Mounted on FR-4 board with 1 in²

, Ambient Temperature(℃)

A

ad area

Transient Thermal Response Curves

JA

1.R

(t)=r(t)*R

θ

2.Duty Factor, D=t1/t

3.TJM-TA=PDM*R

4.R

θJA

=270

°C/W

θJA

2

JA

(t)

θ

0.02

0.01

r(t), Norma lized Effec tiveTra nsient The rmal

Single Pulse

0.01

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t

, Square Wave Pulse Duration(s)

1

MTP3413N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 6/8

Carrier Tape Dimension

MTP3413N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 7/8

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

S min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C 150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C 200°C

60-180 seconds

217°C

60-150 seconds

MTP3413N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C394N3 Issued Date : 2012.01.19 Revised Date : Page No. : 8/8

Marking:

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

C

DIM

A

L

3

S

B

1

V

D

G

Inches

2

H

K

Millimeters Inches Millimeters

Min. Max. Min. Max.

J

DIM

Style: Pin 1.Gate 2.Source 3.Drain

Min. Max. Min. Max. A 0.1102 0.1204 2.80 3.04 J 0.0032 0.0079 0.08 0.20 B 0.0472 0.0669 1.20 1.70 K 0.0118 0.0266 0.30 0.67 C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15 D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0000 0.0040 0.00 0.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

TE

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MTP3413N3 CYStek Product Specification

Datasheet MTP3403AN3, MTP3413N3 Datasheet (CYStech) [ru]