Datasheet MTP3055E Datasheet (SGS Thomson Microelectronics)



MTP3055E

N - CHANNEL 60V - 0.1Ω - 12A TO-220

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

MT P3055E 60 V < 0.15 Ω 12 A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

o

■ 175

■ APPLICATIONORIENTED

C OPERATINGTEMPERATURE

DS(on)

= 0.1 Ω

CHARACTERIZATION

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

DM

P

T

(•) Pulse widthlimited by safeoperating area
First digit of the datecode being Zor K identifies silicon characterized in this datasheet.

July 1999

Dra in- sour c e Voltage ( VGS=0) 60 V

DS

Dra in- gate V ol t age (RGS=20kΩ)60V

DGR

Gat e-source Voltage

GS

I

Dra in Current (contin uous) at Tc=25oC12A

D

Dra in Current (pulsed) at Tc= 100oC9A

DM

20 V

±

(•) Dra in Current (pulsed) 48 A

Tot al Dissipation at Tc=25oC40W

tot

St orage Tem pe r at ur e -65 to 175

stg

T

Max. Operat ing Junc tion Tem perature 175

j

o

C

o

C

1/8

MTP3055E

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-s

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead T emperat ure For Solder ing Purp os e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse A v alan che Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

3.75

62.5

0.5

300

12 A

50 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRatingx0.8 Tc=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA22.94V
Sta t ic Drain-sour c e On

VGS=10V ID=7A 0.1 0.15

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on )maxVGS

=10V 12 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacitanc e

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=6A 4 6 S

VDS=25V f=1MHz VGS= 0 760

100

30

µ
µA

Ω

pF
pF
pF

A

2/8

MTP3055E

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING RESISTIVE LOAD

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Q
Q
Q

t

Turn-on Time
Rise T ime

r

Tur n-of f Delay Time

t

Fall T ime

f

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=30V ID=7A
R

G

=50

Ω

VGS=10V

(see t est circuit)

ID=12A VGS=10V

=40V

V

DD

(see t est circuit)

20
65
70
35

15

7
5

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current
Source-drain Current

(•)

(pulsed)

12
48

(∗)ForwardOnVoltage ISD=12A VGS=0 2.0 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs

=30V Tj= 150oC

V

DD

65

0.17

Charge

ns
ns
ns
ns

nC
nC
nC

A
A

ns

µ

C

SafeOperating Area ThermalImpedance

3/8

MTP3055E

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

MTP3055E

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

MTP3055E

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

TO-220 MECHANICALDATA

MTP3055E

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/8

MTP3055E

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