Datasheet MTP2311N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

-60V P-CHANNEL Enhancement Mode MOSFET

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 1/8

MTP2311N3

Features

Low gate charge

•

Compact and low profile SOT-23 package

•

Advanced trench process technology

•

High density cell design for ultra low on resistance

•

Pb-free lead plating package

•

ID -3.5A
RDSON@VGS=-10V, ID=-2A

RDSON@VGS=-4.5V,ID=-1.7A

Symbol Outline

MTP2311N3

BVDSS -60V

72mΩ(typ)
98mΩ(typ)

SOT-23

D

G：Gate
S：Source
D：Drain

G

S

Absolute Maximum Ratings (Ta=25°C)

Parameter

Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V

Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=100°C (Note 3)
Pulsed Drain Current (Notes 1, 2) IDM -14 A

Maximum Power Dissipation (Note 3)

Linear Derating Factor

Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Symbol Limits Unit

ID

PD 1.38 W

0.01

-3.5 A

-2.2 A

W/°C

°C

MTP2311N3 CYStek Product Specification

Thermal Performance

Parameter Symbol Limit Unit

CYStech Electronics Corp.

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 2/8

Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 90

Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Electrical Characteristics (Tj=25°C, unless otherwise noted)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV

∆BV

V

*R

Dynamic

Source-Drain Diode

-60 - - V VGS=0, ID=-250μA

DSS

/∆Tj - 0.04 -

DSS

-1.0 -1.8 -3.0 V VDS=VGS, ID=-250μA

GS(th)

±

I

- -

GSS

I

DSS

- - -1 VDS=-48V, VGS=0

- - -25

100

V/°C Reference to 25°C, ID=-1mA

V

nA

μA

=±20V, VDS=0

GS

VDS=-48V, VGS=0 (Tj=70

- 72 90 ID=-2A, VGS=-10V

DS(ON)

- 98 120

mΩ

ID=-1.7A, VGS=-4.5V

*GFS - 5.8 - S VDS=-5V, ID=-3A

Ciss - 962 -

Coss - 56 -

pF VDS=-20V, VGS=0, f=1MHz

Crss - 40 -

t

- 5.9 -

d(ON)

V

=-20V, ID=-1A, VGS=-10V

tr - 5.7 -

t

- 19.2 -

d(OFF)

ns

DS

RG=6Ω

tf - 6 -

Qg - 11 -

Qgs - 3.4 -

nC V

=-30V, ID=-3.5A, VGS=-10V

DS

Qgd - 3.4 -

*IS - - -3.5

*ISM - - -14 A

*VSD - - -1.3 V VGS=0V, IF=IS

Trr - 12 - ns

Qrr - 7 - nC

VGS=0V, IF=-3.5A, dI/dt=100A/μs

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

°C)

°C/W

Ordering Information

Device Package Shipping Marking

MTP2311N3

(Pb-free lead plating package)

SOT-23

3000 pcs / Tape & Reel 2311

MTP2311N3 CYStek Product Specification

CYStech Electronics Corp.

V

V

GS

V

Typical Characteristics

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 3/8

Typical Output Characteristics

20

15

10

Drain Current (A)

,

D

-I

1000

100

Resistance(mΩ)

, Static Drain-Source On-State

DS( on )

R

10V
9V
8V
7V
6V

4.5

5

0

012345

Drain-Source Voltage(V)

-V

,

DS

Static Drain-Source On-State resistance vs Drain Current

VGS=-3.5V

VGS=-3V

VGS=-4.5V

10

0.001 0.01 0.1 1 10

-I

, Drain Current(A)

D

-VGS=4V

-VGS=3.5V

-VGS=3

-VGS=2.5V

VGS=-4

VGS=-10V

Brekdown Voltage vs Ambient Temperature

80

75

70

(V)

65

60

, Drain-Source Breakdown Voltage

DSS

55

-BV

ID=-250μA,

=0V

V

50

-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

1.2

VGS=0V

1

Tj=25°C

0.8

0.6

Tj=150°C

, Source-Drain Voltage(V)

SD

0.4

-V

0.2
024681

, Reverse Drain Current (A)

-I

DR

0

Drain-Source On-State Resistance vs Junction Tempearture

160
150
140
130

VGS=-4.5V, ID=-1.7A

120
110
100

90
80
70

Resistance(mΩ)

60

VGS=-10V, ID=-2A

50
40
30
20

-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)

, Static Drain-Source On-

R

DS( ON)

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

180

160

140

120

100

ID=-2A
I

=-1.7A

D

80

60

State Resistance(mΩ)

40

20

0

024681

-V

, Gate-Source Voltage(V)

GS

0

, Static Drain-Source On-State

DS( ON)

R

MTP2311N3 CYStek Product Specification

CYStech Electronics Corp.

μ

Typical Characteristics(Cont.)

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 4/8

Capacitance vs Drain-to-Source Voltage

10000

1000

100

Capacitance---(pF)

Crss

10

0.1 1 10 100
, Drain-Source Voltage(V)

-V

DS

Forward Transfer Admittance vs Drain Current

10

1

Ciss

C

oss

Threshold Voltage vs Junction Tempearture

2.2

2

1.8

1.6

1.4

,Threshold Voltage-(V)

1.2

GS( th)

-V
1

0.8

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

8

VDS=-30V

6

=-3.5A

I

D

ID=-250μA

0.1

, Forward Transfer Admittance-(S)

FS

G

0.01

0.001 0.01 0.1 1 10

-I

, Drain Current(A)

D

Maximum Safe Operating Area

100

10

1

, Drain Current (A)

D

-I

0.1

0.01

TA=25°C, Tj=150°C

=-10V

V

GS

Single Pulse

0.01 0.1 1 10 100

-V

, Drain-Source Voltage(V)

DS

VDS=-10V
Pulsed
Ta=25°C

100

10ms

100m

DC

1ms

10μs

, Gate-Source Voltage(V)

GS

-V

, Maximum Drain Current(A)

D

I

4

2

0

02468101214

Qg, Total Gate C harge(nC)

Maximum Drain Current vs JunctionTemperature

4.5

4

3.5

3

2.5

2

1.5

1

0.5

TA=25°C, VGS=-10V

0

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

MTP2311N3 CYStek Product Specification

CYStech Electronics Corp.

p

Typical Characteristics(Cont.)

Power Derating Curve

1.6

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 5/8

1.4

1.2

1

0.8

0.6

, Power Dissipation(W)

D

0.4

P

0.2

0

0 20 40 60 80 100 120 140 160

T

1

D=0.5

0.2

0.1

0.1

Resistance

0.05

Mounted on FR-4 board

²

with 1 in

, Ambient Temperature(℃)

A

ad area

Transient Thermal Response Curves

JA

1.R

(t)=r(t)*R

θ

2.Duty Factor, D=t1/t

3.TJM-TA=PDM*R

4.R

θJA

=270

°C/W

θJA

2

JA

(t)

θ

0.02

0.01

r(t), Norma lized Effec tiveTra nsient The rmal

0.01

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

Single Pulse

t

, Square Wave Pulse Duration(s)

1

MTP2311N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 6/8

Carrier Tape Dimension

MTP2311N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 7/8

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

S min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

MTP2311N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 8/8

Marking:

DIM

A

L

3

S

B

1

V

C

D

G

Inches

2

H

Millimeters Inches Millimeters

Min. Max. Min. Max.

Style: Pin 1.Gate 2.Source 3.Drain

K

J

DIM

Min. Max. Min. Max.

TE

2311

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*: Typical

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTP2311N3 CYStek Product Specification