Page 1
MTP20N15E
Power MOSFET
20 Amps, 150 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power converters
and PWM motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
and V
DSS
• This is a Pb−Free Device*
MAXIMUM RATINGS (T
Drain−Source Voltage V
Drain−Gate Voltage (RGS = 1.0 MΩ) V
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain − Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Drain−to−Source Avalanche Energy
− Starting T
= 120 Vdc, VGS = 10 Vdc,
(V
DD
I
= 20 Apk, L = 0.3 mH)
L
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Specified at Elevated Temperature
DS(on)
= 25°C unless otherwise noted)
C
Rating
= 25°C
J
Symbol Value Unit
stg
150 Vdc
150 Vdc
± 20
± 32
20
12
60
112
0.9
−55 to
150
60 mJ
1.1
62.5
260 °C
Vdc
Adc
Watts
W/°C
°C
°C/W
V
V
I
E
R
R
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
AS
θ
JC
θ
JA
T
L
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20 AMPERES
150 VOLTS
R
DS(on)
G
4
CASE 221A
1
2
3
MTP20N15E = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MTP20N15EG TO−220AB
= 130 mΩ
N−Channel
D
TO−220AB
STYLE 5
(Pb−Free)
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
MTP
20N15EG
AYWW
1
Gate
2
Drain
4
3
Source
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 1
1 Publication Order Number:
MTP20N15E/D
Page 2
MTP20N15E
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
= 0 Vdc, ID = 0.25 mAdc)
(V
GS
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
= 150 Vdc, VGS = 0 Vdc)
(V
DS
= 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
(V
DS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
= VGS, ID = 0.25 mAdc)
(V
DS
Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc) R
Drain−Source On−Voltage (VGS = 10 Vdc)
= 20 Adc)
(I
D
= 10 Adc, TJ = 125°C)
(I
D
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VDD = 75 Vdc, ID = 20 Adc,
V
= 10 Vdc,
GS
= 9.1 Ω)
R
G
Fall Time t
Gate Charge
(VDS = 120 Vdc, ID = 20 Adc,
V
= 10 Vdc)
GS
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(I
= 20 Adc, VGS = 0 Vdc, TJ = 125°C)
S
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/μs)
S
Reverse Recovery Stored
Charge
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol Min Ty p Max Unit
V
(BR)DSS
I
DSS
GSS(f)
I
GSS(r)
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
r
d(off)
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
Q
RR
150
−
−
TBD
−
−
Vdc
mV/°C
μAdc
−
−
−
−
2.0
−
−
−
−
−
−
TBD
10
100
100
100
4.0
−
nAdc
Vdc
mV/°C
− 0.12 0.13 Ohm
Vdc
−
−
−
−
2.8
2.6
8.0 11 − mhos
− 1133 1627 pF
− 332 474
− 105 174
− 11 25 ns
− 77 153
− 33 67
− 49 97
− 39.1 55.9 nC
− 7.5 −
− 22 −
− 17 −
Vdc
−
−
− 160 −
−
−
1.5
−
ns
− 123 −
− 36.5 −
− 1.1 − μC
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Page 3
MTP20N15E
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
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MTP20N15E/D
3
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