Datasheet MTNN20N03Q8 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 1/9

MTNN20N03Q8

N-CH 1 N-CH 2
BVDSS 30V 60V
ID 8A 0.115A

Description

The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.

Features

Simple drive requirement

•

Low on-resistance

•

Fast switching speed

•

Two N-ch MOSFETs in a package

•

Pb-free lead plating package

•

RDSON(MAX)

20mΩ 5Ω

Equivalent Circuit Outline

MTNN20N03Q8 SOP-8

G：Gate

S：Source

D：Drain

MTNN20N03Q8 CYStek Product Specification

CYStech Electronics Corp.

Absolute Maximum Ratings (Ta=25°C)

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 2/9

Parameter Symbol

Unit

N-CH 1 N-CH 2

Drain-Source Voltage VDS 30 60 V

Limits

Gate-Source Voltage VGS

D 8 0.115 A

Continuous Drain Current @ TC=25 °C (Note 1)

Continuous Drain Current @ TC=100 °C (Note 1)

I

I

D 6 0.08 A

±20 ±20

V

Pulsed Drain Current (Note 2&3) IDM 32 0.7 A

Total Power Dissipation @ TA=25 °C
Linear Derating Factor

ESD susceptibility (Note 4)

Operating Junction Temperature Tj -55~+150

Storage Temperature Tstg -55~+150

Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 62.5

Note : 1. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.

2. Pulse width limited by maximum junction temperature.

3. Pulse width≤300μs, duty cycle≤2%.

4. Human body model, 1.5kΩ in series with 100pF

Pd 2 0.4 W

0.016 0.016

1250 V

W / °C

°C

°C

°C/W

Characteristics (Tj=25°C, unless otherwise specified)

N-Channel MOSFET 1

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV

30 - - V VGS=0, ID=250μA

DSS

V

1.0 1.5 3.0 V VDS = VGS, ID=250μA

GS(th)

GFS - 16 - S VDS =5V, ID=8A

I

- -

GSS

- - 1 VDS =24V, VGS =0

- - 25

- 15.5 20 VGS =10V, ID=8A

- 23 31

*R

I

DSS

DS(ON)

±

100

nA

μA

mΩ

VGS=±20

V

=20V, VGS =0, Tj=125°C

DS

V

=5V, ID=6A

GS

Dynamic

*Qg(VGS=10V) - 11 -

*Qg(VGS=5V) - 6 -

*Qgs - 1.2 -

nC I

=8A, VDS=15V, VGS=10V

D

*Qgd - 3.3 -

*td

- 11 -

(ON)

V

=15V, ID=1A,VGS=10V,

R

DS

=6Ω

G

*tr - 16 -

*td

- 36 -

(OFF)

ns

*tf - 20 -

Ciss - 1115 -

Coss - 116 -

pF V

=0V, VDS=15V, f=1MHz

GS

Crss - 82 -

Ω

Rg - 2 -

VGS=15mV, VDS=0V, f=1MHz

MTNN20N03Q8 CYStek Product Specification

Spec. No. : C805Q8

CYStech Electronics Corp.

Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 3/9

Source-Drain Diode

*IS - - 2.3

*ISM - - 9.2

*VSD - - 1.2 V IF=I

*trr - 50 - ns

*Qrr - 2 - nC

A

S, VGS

, VGS=0, dI/dt=100A/μs

I

F=IS

=0V

N-Channel MOSFET 2

Symbol Min. Typ. Max. Unit Test Conditions

BV

V

R

60 - - V VGS=0, ID=10μA

DSS*

1 - 2.5 V VDS=VGS, ID=250μA

GS(th)

I

- - ±10 μA VGS=±20V, VDS=0

GSS

I

- - 1 μA VDS=60V, VGS=0

DSS

DS(ON)*

- 3.6 5.5 ID=100mA, VGS=5V

- 3 5

Ω

ID=100mA, VGS=10V

GFS 100 - - mS VDS=10V, ID=100mA

C

- 30.5 -

iss

C

- 9.3 -

oss

C

- 5.9 -

rss

pF VDS=10V, VGS=0, f=1MHz

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping

MTNN20N03Q8

(Pb-free lead plating package)

SOP-8

3000 pcs / Tape & Reel

Typical Characteristics
N-CH MOSFET 1

30

V = 10 V

GS

25

20

15

10

D

I - Drain Current (A)

5

0

0

On-Region Charact eri sti cs

6V

7V

5V

12

V - Dr ain Source Voltage(V)

DS

4.5V

4V

3.5V

3

4

5

On-Resistance Vari ation wi th Drain Cur rent and Gat e Volt age

2.4

2.2
V = 3. 5 V

GS

2.0

1.8

1.6

1.4

DS(ON)

1.2

1.0

R -Normalized

Drain-Source On-Resist ance

0.8

0

4.0 V

4.5 V

6

12

I - Drain Curr ent (A)

D

5.0 V

6.0 V

7.0 V

18 24

10 V

30

MTNN20N03Q8 CYStek Product Specification

Spec. No. : C805Q8

CYStech Electronics Corp.

Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 4/9

On-Resi stance Variat ion w ith Temperat ure

1.9
I = 8A

D

V = 10V

GS

1.6

On-Resist ance Variation wit h Gate-to-Source Volt age

0.09

I = 8 A

0.08

0.07

D

DS(ON)

R - On-Resistance( Ω )

0.06

0.05

0.04

0.03

0.02

0.01

T = 125° C

A

T = 25° C

A

2

4

V - Gat e-Source Vol t age( V )

6

GS

810

1.3

1.0

DS(on)

R - Nor malized

Drain-Source On-Resistance

0.7

0.4

-50

0

-25 25
T - Juncti on Temperature (° C)

J

75

100 150

12550

30

25

20

15

10

D

I - Drain Current (A)

5

V = 10V

DS

Transf er Charact er ist ics

T = -55° C

A

125° C

25° C

Is - Reverse Drain Current( A )

100

10

0.1

0.01

Body Diode Forw ard Volt age Variation
wit h Source Current and Temperature

V = 0V

GS

T = 1 25° C

A

1

25° C

-55° C

0

1

1.5

GS

V - Gat e-Sou rce Volt age( V )

2.0

3.02.5 3.5

0.001

0.2 0.6

0

0.4

V - Body Diode Forward Volt age( V )

SD

1.00.8 1.2

1.4

10

8

6

4

GS

V - Gat e-Sour ce Volt age( V )

2

0

Gate Char ge Ch aract erist ics

I = 8A

D

0

Q - Gate Charge( nC )

g

V = 5V

DS

48

10V

15V

12 16

Capacit ance(pF)

1500

1350

1200

1050

900

750

600

450

300

150

Cap a ci t an c e Ch a r ac t er i st i c s

0

5

0

V - Dr ain -Sou rce Vo lt age( V )

DS

f = 1MHz
V = 0 V

GS

Ci s s

Co s s

Cr s s

15

10

20

25 30

MTNN20N03Q8 CYStek Product Specification

100

10

D

0.1

I - Drain Current ( A )

0.01

0.1

Maximum Safe Operating Ar ea

R Li mit

DS(ON)

1

V = 10V

GS

Si n gl e Pu l se
R = 125°C/W

θJA

T = 25°C

A

1

V - Dr ain-Sour ce Vol ta ge( V )

DS

N-CH MOSFET 2

CYStech Electronics Corp.

Single Pulse Maximum Power Dissipation

DC

10s

1ms

10ms

100ms

1s

10 100

100

μs

50

40

30

20

10

P( pk ),Peak Transi ent Po wer ( W )

0

0.001 0.01 0.1 10010

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 5/9

Si n gl e Pu l se
R = 125° C/ W

θJA

T = 25° C

A

1

1000

Drain Curre nt - ID(A)

Typical Output Characteristics

0.3

0.25

0.2

0.15

0.1

0.05

6V

0

01234

Static Drain-Source On-State resistance vs Drain Current

10

4V

3.5V

3V

VGS= 2.2V

Drain-Source Voltage -VDS(V)

VGS=5V

Typical Transfer Characteristics

0.3

0.25

0.2

0.15

0.1

Drain Current -ID(A)

0.05

0

01234

10

VDS= 10V

Gate-Source Voltage-VGS(V)

St at ic Dra in-Source On-St at e res istance vs Drai n C urre nt

Resistance-RDS(on)(Ω)

Static Drain-Source On-State

1

0.01 0.1 1
Drain Current-ID(A)

Resistance-RDS(on)(Ω)

Static Drain-Source On-State

1

0.01 0.1 1

VGS= 10V

Drain C urrent-ID(A)

MTNN20N03Q8 CYStek Product Specification

Spec. No. : C805Q8

CYStech Electronics Corp.

Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 6/9

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

7

6

5

10

Reverse Drain Current vs Source-Drain Voltage

1

4

3

2

Resistance-RDS(ON)(Ω)

Static Drain-Source On-State

1

0

0 5 10 15 20 25

ID=50mA

ID=100mA

Gate-Source Voltage-VGS(V)

0.1

0.01

Source-Drain Voltage-VSD(V)

0.001
0 0.2 0.4 0.6 0.8 1

Reverse Drain Current -IDR(A)

Capacitance vs Drain-to-Source Voltage

100

Ciss

C

10

Capacitance---(pF)

oss

Crss

1

0.1 1 10 100
Drain-Source Voltage -VDS(V)

MTNN20N03Q8 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 7/9

Carrier Tape Dimension

MTNN20N03Q8 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 8/9

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTNN20N03Q8 CYStek Product Specification

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

g

SOP-8 Dimension

CYStech Electronics Corp.

Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 9/9

Top View

B

A

C

Right side View

G

I

H

Device Name

Date Code

Marking:

20N03

□□□□

J

E

DIM

D

Front View

Part A

F

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.
A 0.1890 0.2007 4.80 5.10 I 0.0098 REF 0.25 REF
B 0.1496 0.1654 3.80 4.20 J 0.0118 0.0354 0.30 0.90
C 0.2283 0.2441 5.80 6.20 K 0.0074 0.0098 0.19 0.25
D 0.0480 0.0519 1.22 1.32 L 0.0145 0.0204 0.37 0.52
E 0.0138 0.0193 0.35 0.49 M 0.0118 0.0197 0.30 0.50
F 0.1472 0.1527 3.74 3.88 N 0.0031 0.0051 0.08 0.13
G 0.0531 0.0689 1.35 1.75 O 0.0000 0.0059 0.00 0.15
H 0.1889 0.2007 4.80 5.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Part A

M

K

L

N

O

DIM

Min. Max. Min. Max.

8-Lead SOP-8 Plastic Package

CYStek Packa

e Code: Q8

*: Typical

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTNN20N03Q8 CYStek Product Specification