Datasheet MTNK3N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

ESD protected N-CHANNEL MOSFET

Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 1/6

BVDSS 20V

MTNK3N3

Description

• Low voltage drive, 1.8V

• Easy to use in parallel

• High speed switching

• ESD protected device

• Pb-free package

Symbol Outline

ID 100mA
RDSON

SOT-23 MTNK3N3

D

3Ω

G：Gate
S：Source

G

D：Drain

S

Absolute Maximum Ratings

Parameter Symbol Limits Unit
Drain-Source Voltage BVDSS 20 V
Gate-Source Voltage
Continuous Drain Current

Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient

Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%

*2. Human body model, 1.5kΩ in series with 100pF

(Ta=25°C)

VGS

I

D

I

DM

P

D

Tj

Rth,ja

±8 V

100 mA

400 *1 mA

300 mW

350 *2 V

-55~+150
417

°C

°C/W

MTNK3N3 CYStek Product Specification

Spec. No. : C447N3

CYStech Electronics Corp.

Issued Date : 2010.08.18
Revised Date :
Page No. : 2/6

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV
V

R

20 - - V VGS=0, ID=100μA

DSS

0.5 - 1.0 V VDS=VGS, ID=250μA

GS(th)

±

I

- -

GSS

I

- - 500 nA VDS=20V, VGS=0

DSS

DS(ON)

- 1.7 3 VGS=4.5V, ID=100mA

- 3.5 6

1

μA

Ω

VGS=±8V, VDS=0

VGS=1.8V, ID=20mA

GFS 100 - - mS VDS=5V, ID=100mA

Dynamic

C

- 23 50

iss

C

- 7.7 25

oss

C

- 5.8 5

rss

pF VDS=10V, VGS=0, f=1MHz

Source-Drain Diode

*VSD - - 1 V VGS=0V, IS=10mA

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking

MTNK3N3

(Pb-free)

Typical Characteristics

Typical Output Characteristics

0.7

5V

Drain C urrent - ID(A)

0.6

0.5

0.4

0.3

0.2

0.1

SOT-23

4.5V

4.0V

3.5V

3V

2.5V

2.0V

1.8V

VGS= 1.5V

3000 pcs / Tape & Reel K3

Typical Transfer Characteristics

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Drain Current -ID(A)

0.1

VDS= 3V

0

01234

Drain-Source Volta ge -VDS(V)

0

0123456

Gate-Source Voltage-VGS(V)

MTNK3N3 CYStek Product Specification

CYStech Electronics Corp.

Characteristic Curves(Cont.)

Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 3/6

10

Resistance-RDS(on)(Ω)

Static Drain-Source On-State

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Source-Drain Voltage-VSD(V)

0.2

0.1

350

Static Drain-Source On-State resistance vs Drain Current

VGS=1.8V

VGS= 4.5V

1

0.001 0.01 0.1 1
Drain Current-ID(A)

Reverse Drain Current vs Source-Drain Voltage

1

00.10.20.30
Reverse Drain Current -IDR(A)

Power Derating Curve

.4

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

7

6

5

4

3

2

Resistance-RDS(ON)(Ω)

Static Drain-Source On-State

1

0

024681

ID=100mA

ID=20mA

0

Gate-Source Voltage-VGS(V)

Capacitance vs Drain-to-Source Voltage

100

Ciss

C

10

Capacitance---(pF)

1

0.1 1 10 100
Drain-Source Voltage -VDS(V)

oss

Crss

300

250

200

150

100

Power Dissipation---PD(mW)

50

0

0 50 100 150 200

Ambient Temperature---TA(℃)

MTNK3N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 4/6

Carrier Tape Dimension

MTNK3N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 5/6

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

S min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (T

− Time (t

L)

L)

Peak Temperature(TP)

Time within 5°C of actual peak
temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

60-180 seconds

60-150 seconds

150°C
200°C

217°C

MTNK3N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 6/6

Marking:

K3

xx

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*:Typical

C

DIM

A

L

3

S

B

1

V

D

G

2

H

K

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

J

DIM

Device Code

Date Code

Style : Pin 1.Gate 2.Source 3.Drain

Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10

Notes : 1.Controlling dimension : millimeters.

Material :

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTNK3N3 CYStek Product Specification