Page 1
CYStech Electronics Corp.
N-CHANNEL MOSFET
MTNK1N3
Description
The MTNK1N3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 1/7
Symbol Outline
MTNK1N3 SOT-23
D
G
S
G：Gate
S：Source
D：Drain
D
S
G
MTNK1N3 CYStek Product Specification
Page 2
Spec. No. : C320N3
CYStech Electronics Corp.
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage
Drain Current
Drain Reverse Current
Continuous ID
Pulsed I
Continuous IDR
Pulsed IDRP
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
VGSS
DP
P
D
TCH
Tstg
±20 V
115 mA
700 *1 mA
115 mA
700 *1 mA
200 *2 mW
1250 *3 V
+150
-55~+150
°C
°C
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BV
V
R
60 - - V VGS=0, ID=10μA
DSS*
1 - 2.5 V VDS=VGS, ID=250μA
GS(th)
I
- - ±10 μA VGS=±20V, VDS=0
GSS
I
- - 1 μA VDS=60V, VGS=0
DSS
DS(ON)*
- 3.6 5.5 ID=100mA, VGS=5V
- 3 5
Ω
ID=100mA, VGS=10V
GFS 100 - - mS VDS=10V, ID=100mA
C
- 7.32 -
iss
C
- 3.42 -
oss
C
- 7.63 -
rss
pF VDS=10V, VGS=0, f=1MHz
td(on) - 1.2 -
=30V, ID=200mA, RGS=25Ω,
V
tr - 1 -
td(off) - 1.1 -
ns
DD
VGS=10V, RL=15Ω
tf - 2.2 -
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking
MTNK1N3
SOT-23
(Pb-free)
3000 pcs / Tape & Reel 702
MTNK1N3 CYStek Product Specification
Page 3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 3/7
Typical Output Characteristics
0.3
0.25
0.2
0.15
0.1
Drain Current - ID(A)
0.05
6V
0
01234
4V
3.5V
3V
VGS= 2. 2V
Drain-Source Voltage -VDS(V)
0.3
0.25
0.2
0.15
0.1
Drain Current -ID(A)
0.05
0
01234
Typical Transfer Characteristics
VDS= 10V
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State resistance vs Drain Current
10
VGS=5V
St ati c Dra in-Sourc e On-Sta te re si stanc e vs Drain Curre nt
10
Resistance-RDS(o n)(Ω)
Static Drain-Source On-State
1
0.01 0.1 1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
7
6
5
4
3
2
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
1
0
ID=50mA
0 5 10 15 20 25
ID=100mA
Gate-Source Voltage-VGS(V)
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
1
0.01 0.1 1
10
1
0.1
0.01
Source-Drain Voltage-VSD(V)
0.001
VGS= 10V
Drain Current-ID(A)
Reverse Drain Current vs Source-Drain Voltage
0 0.2 0.4 0.6 0.8 1
Reverse Drain Current -IDR(A)
MTNK1N3 CYStek Product Specification
Page 4
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 4/7
Capacitance vs Drain-to-Source Voltage
100
10
Capacitance---(pF)
C
oss
1
0.1 1 10 100
Drain-Source Voltage -VDS(V)
Crss
Ciss
250
200
150
100
50
Power Dissipation---PD(mW)
0
0 50 100 150 200
Power Derating Curve
Ambient Temperature---TA(℃)
MTNK1N3 CYStek Product Specification
Page 5
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 5/7
Carrier Tape Dimension
MTNK1N3 CYStek Product Specification
Page 6
CYStech Electronics Corp.
Recommended wave soldering condition
Product Peak Temperature Soldering Time
Pb-free devices
Recommended temperature profile for IR reflow
260 +0/-5 °C
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 6/7
5 +1/-1 seconds
Profile feature Sn-Pb eutectic Assembly
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTNK1N3 CYStek Product Specification
3°C/second max. 3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C 260 +0/-5 °C
10-30 seconds 20-40 seconds
6°C/second max. 6°C/second max.
6 minutes max. 8 minutes max.
Pb-free Assembly
150°C
200°C
60-180 seconds
217°C
60-150 seconds
Page 7
SOT-23 Dimension
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2010.03.10
Page No. : 7/7
A
L
3
S
B
1
2
Marking:
702
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
H
Inches Millimeters Inches Millimeters
K
J
DIM
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Min. Max. Min. Max.
C
DIM
V
D
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes : 1.Controlling dimension : millimeters.
Material :
• Lead : 42 Alloy ; pure tin plated
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTNK1N3 CYStek Product Specification
Page 8
Loading...