Datasheet MTN7002ZHN3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

N-Channel Logic Level Enhancement Mode MOSFET

MTN7002ZHN3

Description

The MTN7002ZHN3 is a N-channel enhancement-mode MOSFET.

Features

• Low on-resistance

• High ESD

• High speed switching

• Low-voltage drive(2.5V)

• Easily designed drive circuits

• Easy to use in parallel

• Pb-free package

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 1/7

Symbol Outline

MTN7002ZHN3

D

G

S

G：Gate
S：Source
D：Drain

SOT-23

D

S

G

MTN7002ZHN3 CYStek Product Specification

Spec. No. : C320N3

CYStech Electronics Corp.

Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 2/7

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage

Drain Current

Drain Reverse Current

Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature

Continuous ID
Pulsed I
Continuous IDR
Pulsed IDRP

VGSS

DP

P

D

TCH

Tstg

±20 V

300 mA

800 *1 mA

300 mA
800 *1 mA
350 *2 mW
1550 *3 V

+150

-55~+150

°C
°C

Thermal Characteristics

Parameter Symbol Value Unit

Thermal Resistance, Junction to Ambient RθJA 357 *2

Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch

*3. Human body model, 1.5kΩ in series with 100pF

°C/W

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BV

V

60 - - V VGS=0, ID=10μA

DSS*

1 1.2 2.5 V VDS=VGS, ID=250μA

GS(th)

I

- - ±10 μA VGS=±20V, VDS=0

GSS

I

- - 1 μA VDS=60V, VGS=0

DSS

- 1.5 2.5 ID=100mA, VGS=10V

R

DS(ON)*

- 1.9 3 ID=100mA, VGS=4.5V

- 3.3 6

Ω

ID=10mA, VGS=2.5V

GFS 100 240 - mS VDS=10V, ID=100mA

C

- 30.6 -

iss

C

- 5.5 -

oss

C

- 4 -

rss

pF VDS=10V, VGS=0, f=1MHz

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking

MTN7002ZHN3

MTN7002ZHN3 CYStek Product Specification

SOT-23

(Pb-free)

3000 pcs / Tape & Reel 702

CYStech Electronics Corp.

Characteristic Curves

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 3/7

Typical Output Characteristics

1.4

1.2

1.0

0.8

0.6

Drain Current - ID(A)

0.4

0.2

0.0
024681012

Drain-Source Voltage -VDS(V)

10V

3.5V

2.5V

VGS=2V

3V

6V

4.5V

4V

1.4

1.2

1

0.8

0.6

0.4

Drain Current -ID(A)

0.2

0

024681012

Typical Transfer Characteristics

VDS= 10V

Gate-Source Voltage-VGS(V)

Static Drain-Source On-State resistance vs Drain Current

10

1.2

Reverse Drain Current vs Source-Drain Voltage

1

Tj=25°C

VGS= 2. 5V

VGS= 4. 5V

Resistance-RDS(on)(Ω)

Static Drain-Source On-State

VGS=10V

1

0.001 0.01 0.1 1
Drain Current-ID(A)

Static Drain-Source On-State Resistance vs Gate-Source

Volta ge

7

6

5

4

3

2

Resistance-RDS(ON)(Ω)

Static Drain-Source On-State

1

ID=100mA

0.8

Tj=125°C

0.6

0.4

Source-Drain Voltage-VSD(V)

0.2
0 0.2 0.4 0.6 0.8 1

Drain-Source On-State Resistance vs Junction Tempearture

7

6

5

4

3

2

Resistance-RDS(ON)(Ω)

Static Drain-Source On-State

1

Reverse Drain Current -IDR(A)

VGS=10V, ID=100mA

0

024681

Gate-Source Voltage-VGS(V)

0

0

-60 -20 20 60 100 140 180
Junction Temperature-Tj(°C)

MTN7002ZHN3 CYStek Product Specification

CYStech Electronics Corp.

Characteristic Curves(Cont.)

Capacitance vs Drain-to-Source Voltage

100

1.6

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 4/7

Threshold Voltage vs Junction Tempearture

Ciss

10

Capacitance---(pF)

1

0.1 1 10 100
Drain-Source Voltage -VDS(V)

Power Derating Curve

400

350

300

250

200

150

C

Crss

ID=250uA

1.4

1.2

oss

1

Threshold Voltage-VGS(th)(V)

0.8

-60 -20 20 60 100 140

Junction Temperature-Tj(°C)

100

Power Dissipation---PD(mW)

50

0

0 50 100 150 200

Ambient Temperature---TA(℃)

MTN7002ZHN3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 5/7

Carrier Tape Dimension

MTN7002ZHN3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 6/7

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTN7002ZHN3 CYStek Product Specification

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 7/7

A

L

3

S

B

1

2

Marking:

702

G

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

H

Inches Millimeters Inches

K

J

DIM

Style : Pin 1.Gate 2.Source 3.Drain

Min. Max. Min. Max.

*:Typical

Millimeters

C

DIM

V

D

Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0005 0.0040 0.013 0.10

Notes : 1.Controlling dimension : millimeters.

Material :

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN7002ZHN3 CYStek Product Specification