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CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN7002N3
Description
The MTN7002N3 is a N-channel enhancement-mode MOSFET.
Symbol Outline
Spec. No. : C325N3
Issued Date : 2002.12.18
Revised Date : 2007.12.12
Page No. : 1/5
MTN7002N3
SOT-23
D
S
G：Gate
G
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage BVDSS 60 V
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source Voltage
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Total Power Dissipation (Tc=25°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Lead Temperature, for 10 second Soldering
BVDGR 60 V
VGS
D
I
D
I
DM
I
P
D
Tj
Tstg
Rth,ja
Rth,jc
TL
200 *1 mA
115 *1 mA
800 *2 mA
±20 V
200
500
-55~+150
-55~+150
625
250
240
mW
°C
°C
°C/W
°C/W
°C
Note : *1. The power dissipation of the package may result in a continuous drain current
*2. Pulse Width ≤ 300µs, Duty cycle ≤2%
MTN7002N3 CYStek Product Specification
Page 2
Spec. No. : C325N3
CYStech Electronics Corp.
Issued Date : 2002.12.18
Revised Date : 2007.12.12
Page No. : 2/5
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BV
V
V
R
60 - - V VGS=0, ID=10µA
DSS
1 - 2.5 V VDS=2.5V, ID=0.25mA
GS(th)
I
- - 100 nA VGS=+20V, VDS=0
GSS/F
I
- - -100 nA VGS=-20V, VDS=0
GSS/R
I
- - 1 µA VDS=60V, VGS=0
DSS
I
500 - - mA VDS>2V
D(ON)
DS(ON)
DS(ON)
- - 0.375 V ID=50mA, VGS=5V
- - 3.75 V ID=500mA, VGS=10V
- - 7.5 ID=50mA, VGS=5V
- - 7.5 Ω ID=500mA, VGS=10V
GFS 80 - - mS VDS>2V
C
- - 50
iss
C
- - 25
oss
C
- - 5
rss
pF VDS=25V, VGS=0, f=1MHz
Ordering Information
Device Package Shipping Marking
, VGS=10V
DS(ON)
, ID=200mA
DS(ON)
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
MTN7002N3 SOT-23 3000 pcs / Tape & Reel 702
Characteristic Curves
TYPICAL OUTPUT CHARACT ERISICS
1.4
1.2
1.0
0.8
0.6
0.4
DRAIN CURRENT---ID(A)
0.2
0.0
012345678910
VGS =8V
VGS =5V
VGS =4V
DRAIN-SOURCE ---VDS(V)
MTN7002N3 CYStek Product Specification
TYTICAL TRANSFER CHARACTERISTIC
1.4
1.2
1.0
0.8
0.6
0.4
DRAIN CURRENT---ID(A)
0.2
0.0
012345678910
GAT E-SOURCE VOLTAGE---VGS(V)
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CYStech Electronics Corp.
V
Characteristic Curves(Cont.)
STAT IC DRAIN-SOURCE ON-STAT E
RESISTANCE vs DRAIN CURRENT
Spec. No. : C325N3
Issued Date : 2002.12.18
Revised Date : 2007.12.12
Page No. : 3/5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GA TE-SO URCE VOL TSAG E
4.0
3.5
3.0
2.5
2.0
1.5
1.0
RESISTANCE--- RDS(on)(ohm)
STATIC DRAIN-SOURCE ON-STATE
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS=5 V
VGS=1 0
DRAIN CURRENT---ID(A)
FORWARD TRANSFER ADMITTANCE
vs DRAIN CURRENT
1000
VGS=10V
100
GFS(ms)
10
10
9
8
7
6
STATIC DRAIN-SOURCE ON-STATE
5
4
3
2
RESISTANCE--- RDS(on)(ohm)
1
0
0 5 10 15 20
ID=115mA
ID=57.5m
GATE-SOURCE VOLTAGE---VGS(V)
REVERSE DRAIN CURRENT vs SOURCE-
DRAIN VOLTAGE
1.00
Pul se d
0.10
VGS=0 VVGS=10V
FORWARD TRANSFER ADMITTANCE---
1
0.001 0.01 0.1 1
DRAIN CURRENT---ID(A)
SWITCHING CHARACTERIST ICS
1000
Td(off)
100
10
SWITCHING TIMES---(ns)
1
0.001 0.01 0.1 1
DRAIN CURRENT---ID(A)
Tf
Td(on)
Tr
REVERSE DRAIN CURRENT---IDR(A)
0.01
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
POWER DISSIPATION--PD(W)
0.05
0.00 0.50 1.00 1.50
SOURCE-DRAIN VOLTAGE---VSD(V)
POWER DERATING CURVE
0
0 50 100 150 200
AMBIENT TEMPERATURE---Ta(℃)
MTN7002N3 CYStek Product Specification
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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C325N3
Issued Date : 2002.12.18
Revised Date : 2007.12.12
Page No. : 4/5
Carrier Tape Dimension
MTN7002N3 CYStek Product Specification
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SOT-23 Dimension
A
L
CYStech Electronics Corp.
Spec. No. : C325N3
Issued Date : 2002.12.18
Revised Date : 2007.12.12
Page No. : 5/5
Marking:
C
DIM
3
S
B
1
V
D
G
2
H
K
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
J
DIM
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
Min. Max. Min. Max.
TE
702
*: Typical
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes: 1.Controlling dimension: millimeters.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002N3 CYStek Product Specification
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