Datasheet MTN3400N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

30V N-CHANNEL Enhancement Mode MOSFET

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 1/ 8

MTN3400N3

BVDSS 30V

Features

Low on-resistance

•

Low gate charge

•

Excellent thermal and electrical capabilities

•

Compact and low profile SOT-23 package

•

Equivalent Circuit Outline

MTN3400N3

ID 5.8A

RDSON(TYP)

VGS=10V, ID=5.8A

VGS=4.5V, ID=5A

GS=2.5V, ID=4A

V

SOT-23

D

25mΩ
27mΩ
32mΩ

G：Gate
S：Source
D：Drain

G

S

Absolute Maximum Ratings (Ta=25°C)

Parameter
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V

Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Note 1, 2) IDM 30 A
Maximum Power Dissipation @ TA=25℃

Linear Derating Factor

Thermal Resistance, Junction-to-Ambient (Note 3) Rth,ja 90
Operating Junction and Storage Temperature Tj, Tstg -55~+150

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270

°C/W when mounted on minimum copper pad.

Symbol

D 5.8 A

I

Limits Unit

ID 4.6 A

1.38 W

PD

0.01

W/°C

°C/W

°C

MTN3400N3 CYStek Product Specification

CYStech Electronics Corp.

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV
V

*R

Dynamic

*t

*t

Source-Drain Diode

30 - - V VGS=0, ID=250μA

DSS

0.7 0.8 1.4 V VDS=VGS, ID=250μA

GS(th)

GFS - 11 - S VDS=5V, ID=5A

±

I

- -

GSS

I

- - 1 μA VDS=24V, VGS=0

DSS

I

- - 5 μA VDS=24V, VGS=0, Tj=55°C

DSS

100

- 25 28 VGS=10V, ID=5.8A

DS(ON)

- 27 33 VGS=4.5V, ID=5A

- 32 52

Ciss - 1052 -

Coss - 57 -

Crss - 54 -

- 5 -

d(ON)

*tr - 2.4 -

- 16 -

d(OFF)

*tf - 5 -

*Qg - 9.7 12
*Qgs - 2.7 ­*Qgd - 4.1 -

Rg

-

1.2 3.6

*VSD - 0.74 1.0 V VGS=0V, IS=1.0A

*IS - - 2.5 A VD=VG=0V, VS=1.0V

*trr - 16 - ns

*Qrr - 8.9 - nC

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 2/ 8

nA

VGS=±12V, VDS=0

mΩ

=2.5V, ID=4A

V

GS

pF VDS=15V, VGS=0, f=1MHz

ns

VDS=15V, VGS=10V, RG=3Ω, ID=5.8A

nC VDS=15V, ID=5.8A, VGS=4.5V

Ω

f=1MHz

IS=5A, VGS=0V, dI/dt=100A/μs

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking

MTN3400N3

SOT-23

(Pb-free)

3000 pcs / Tape & Reel 3400

MTN3400N3 CYStek Product Specification

CYStech Electronics Corp.

V=2V

Typical Characteristics

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 3/ 8

Typical Output Characteristics

30

3V,4V,5V,6V,7V,8V,9V,10V

20

, Drain Current(A)

10

D

I

0

012345678910

Static Drain-Source On-State resistance vs Drain Current

1000

VGS=1.8V

100

Resistance(mΩ)

, Static Drain-Source On-State

DS(on)

R

10

0.01 0.1 1 10 100

VDS, Drain-Source Voltage(V)

VGS=2V

VGS=2.5V

VGS=4.5V

I

, Drain Current(A)

D

VGS=10V

Brekdown Voltage vs Ambient Temperature

46

44

42

40

(V)

DSS

38

BV

36

34

Drain-Source Breakdown Voltage

32

30

-75 -50 -25 0 25 50 75 100 125 150 175

ID=250μA,

=0V

V

GS

Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

1.2

VGS=0V

1

Tj=25°C

0.8

0.6

Tj=150°C

, Source-Drain Voltage(V)

SD

0.4

V

0.2
04812162

I

, Reverse Drain Current(A)

DR

0

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

180

160

ID=5.8A

140

120

100

80

, Static Drain-Source On-

60

State Resistance(mΩ)

DS(on)

40

R

20

, Static Drain-Source On-State

DS(on)

R

0

024681

V

, Gate-Source Voltage(V)

GS

0

Drain-Source On-State Resistance vs Junction Tempearture

60

55

VGS=4.5V, ID=5A

50

45

VGS=2.5V, ID=4A

40

35

30

Resistance(mΩ)

25

20

VGS=10V, ID=5.8A

15

10

-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)

MTN3400N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 4/ 8

Capacitance vs Drain-to-Source Voltage

10000

1000

Crss

100

Capacitance---(pF)

10

0.1 1 10 100
, Drain-Source Voltage(V)

V

DS

Forward Transfer Admittance vs Drain Current

100

10

C

oss

Ciss

Threshold Voltage vs Junction Tempearture

1.2

1

0.8

0.6

, Threshold Voltage-(V)

GS(th)

0.4

V

ID=250μA

ID=1mA

0.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

VDS=15V

=5.8A

I

D

8

1

0.1

, Forward Transfer Admittance(S)

FS

G

0.01

0.001 0.01 0.1 1 10
I

, Drain Current(A)

D

Maximum Safe Operating Area

100

10

1

, Drain Current(A)

D

I

0.1

TA=25°C, Tj=150°C, VGS=10V
Single Pulse

0.01

0.01 0.1 1 10 100

VDS, Drain-Source Voltage(V)

VDS=5V
Pulsed
Ta=25°C

10μs

100μs

1ms

10ms

100ms

DC

6

4

, Gate-Source Voltage(V)

2

GS

V

0

0 2 4 6 8 1012 14161820

Qg, Total Gate C harge(nC)

Maximum Drain Current vs JunctionTemperature

7

6

5

4

3

2

, Maximum Drain Current(A)

D

1

I

TA=25°C, VGS=10V

0

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

MTN3400N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 5/ 8

Typical Transfer Characteristics

80

VDS= 5V

70

60

50

40

30

, Drain Current(A)

D

20

I

10

0

0246810

, Gate-Source Voltage(V)

V

GS

Transient Thermal Response Curves

1

D=0.5

Power Derating Curve

1.6

1.4

1.2

1

0.8

0.6

, Power Dissipation(W)

D

0.4

P

0.2

0

0 50 100 150 200

TA, Ambient Temperature(℃)

Mounted on FR-4 board

²

with 1 in

pad area

0.2

0.1

0.1

0.05

0.02

Normalized Transient Thermal Resistance

0.01

Single Pulse

0.01

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t

, Square Wave Pulse Duration(s)

1

JA

1.R

(t)=r(t)*R

θ

2.Duty Factor, D=t1/t

3.TJM-TA=PDM*Z

4.R

θJA

=27

θJA

θ

0°C/W

2

JA

(t)

MTN3400N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 6/ 8

Carrier Tape Dimension

MTN3400N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 7/ 8

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (t

L)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTN3400N3 CYStek Product Specification

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2012.03.29
Page No. : 8/ 8

A

L

3

S

B

1

V

C

D

G

DIM Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

2

Style: Pin 1.Gate 2.Source 3.Drain

H

K

J

DIM

Min. Max. Min. Max.

TE

3400

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*: Typical

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10

Marking:

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN3400N3 CYStek Product Specification