Datasheet MTN2310N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

60V N-CHANNEL Enhancement Mode MOSFET

BVDSS 60V

MTN2310N3

Features

Simple drive requirement

•

Small package outline

•

Pb-free lead plating and halogen-free package

•

Symbol Outline

ID 4A
RDSON@VGS=10V, ID=4A

RDSON@VGS=5V, ID=3A

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 1/8

41mΩ(typ)
46mΩ(typ)

MTN2310N3

G：Gate
S：Source
D：Drain

SOT-23

D

S

G

Absolute Maximum Ratings

Parameter

Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V

Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2) IDM 16 A

Maximum Power Dissipation@ TA=25℃ (Note 3)

Linear Derating Factor

Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

(Ta=25°C)

Symbol Limits Unit

ID

PD 1.38 W

0.01

4 A

3.2 A

W/°C

°C

MTN2310N3 CYStek Product Specification

Thermal Performance

Parameter Symbol Limit Unit

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 2/8

Thermal Resistance, Junction-to-Ambient, max RθJA 90

Thermal Resistance, Junction-to-Case, max RθJC 70

Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Electrical Characteristics (Tj=25°C, unless otherwise noted)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV
V

60 - - V VGS=0, ID=250μA

DSS

1.0 1.8 3.0 V VDS=VGS, ID=250μA

GS(th)

±

I

- -

GSS

I

DSS

- - 1 VDS=48V, VGS=0

- - 25

100

nA

μA

VGS=±20V, VDS=0

VDS=40V, VGS=0 (Tj=70

°C)

- 41 55 ID=4A, VGS=10V

*R

DS(ON)

- 46 65

mΩ

ID=3A, VGS=5V

*GFS - 9 - S VDS=5V, ID=4A

Dynamic

Ciss - 1128 -

Coss - 42 -

pF VDS=30V, VGS=0, f=1MHz

Crss - 32 -

t

- 12 -

d(ON)

tr - 18 -

t

- 32 -

d(OFF)

ns

VDS=30V, ID=1A, VGS=10V, RG=6Ω

tf - 6 -

Qg - 12 -

Qgs - 3.7 -

nC VDS=30V, ID=4A, VGS=10V

Qgd - 3.9 -

Source-Drain Diode

*IS - - 4

*ISM - - 16

A

*VSD - - 1.3 V VGS=0V, IF=IS

Trr - 15 - ns

Qrr - 8 - nC

VGS=0V, IF=4A, dI/dt=100A/μs

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

°C/W

°C/W

Ordering Information

Device Package Shipping

MTN2310N3-0-T1-G

MTN2310N3 CYStek Product Specification

(Pb-free lead plating and halogen-free package)

SOT-23

3000 pcs / Tape & Reel

GS

Typical Characteristics

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 3/8

, Drain Current (A)

D

I

Typical Output Characteristics

16

14

12

10

8

6

4

2

0

0246

Static Drain-Source On-State resistance vs Drain Current

10000

1000

VGS=2.5V

10V, 9V, 8V, 7V,6V,5V, 4V

VDS, Drain-Source Voltage(V)

VGS=3V

VGS=3V

Breakdown Voltage

, Normalized Drain-Sourc e

DSS

BV

8

1.2

0.8

Brekdown Voltage vs Ambie nt Temperature

1.4

1.2

1

0.8

0.6

ID=250μA,

=0V

V

0.4

-100 -50 0 50 100 150 200
Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

VGS=0V

1

Tj=25°C

Resistance(mΩ)

0.6

100

, Static Drain-Source On-State

DS(on)

R

10

0.01 0.1 1 10 100
, Drain Current(A)

I

D

VGS=4.5V

VGS=10V

, Source-Drain Voltage(V)

SD

0.4

V

0.2
024681

, Reverse Drain Current(A)

I

DR

Tj=150°C

0

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

400

360

320

280

240

200

160

, Static Drain-Source On-

120

State Resistance(mΩ)

DS(on)

80

R

ID=4A
I

=3A

D

40

, Normalized Static Drain-

DS(on)

R

0

024681

V

, Gate-Source Voltage(V)

GS

0

Drain-Source On-State Resistance vs Junction Tempearture

2

1.6

VGS=4.5V, ID=3A

1.2

0.8

Source On-State Resistance

VGS=10V, ID=4A

0.4

-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)

MTN2310N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 4/8

Capacitance---(pF)

Capacitance vs Drain-to-Source Voltage

10000

Ciss

1000

100

10

0.1 1 10 100
, Drain-Source Voltage(V)

V

DS

Forward Transfer Admittance vs Drain Current

100

10

C

Crss

oss

Threshold Voltage vs Junction Tempearture

1.4

1.2

ID=250μA

1

0.8

, Normalized Threshold Voltage

0.6

GS(th)

V

0.4

-60 -20 20 60 100 140

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

VDS=15V

8

6

VDS=30V

VDS=48V

4

1

, Forward Transfer Admittance(S)

FS

G

0.1

0.01 0.1 1 10 100
I

, Drain Current(A)

D

Maximum Safe Operating Area

100

R

DSON

Limited

10

1

, Drain Current (A)

D

I

0.1

0.01

TC=25°C, Tj=150°C

θJA

=10V, R

V

GS

Single Pulse

=90°C/W

0.1 1 10 100
V

, Drain-Source Voltage(V)

DS

VDS=5V
Pulsed
Ta=25° C

1ms

10ms

100ms

100μs

DC

, Gate-Source Voltage(V)

2

GS

V

ID=4A

0

048121

6

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

5

4.5

4

3.5

3

2.5

2

1.5

, Maximum Drain Current(A)

D

I

0.5

TA=25°C
V

=10V

1

GS

θJA

R

=90°C/W

0

25 50 75 100 125 150 175

, Junction Temperature(°C)

T

j

MTN2310N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 5/8

Typical Transfer Characteristics

40

VDS=5V

35

30

25

20

15

, Drain Current(A)

D

10

I

5

0

024681012

, Gate-Source Voltage(V)

V

GS

Transient Thermal Response Curves

1

D=0.5

0.2

Single Pulse Power Rating, Junction to Ambient

50

40

(Note on page 2)

T

J(MAX)

T

A

θ

JA

=150°C

=25°C

=90°C/W

30

Power (W)

20

10

0

0.0001 0.001 0.01 0.1 1 10 100
Pulse Width(s)

(t)= r(t)*R

=90°C/W

θJA

0.1

Resistance

0.01

r(t), Normalized Effective Transient Thermal

0.001

0.1

0.05

0.02

0.01

Single Pulse

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1. E+01 1.E+02 1.E+03

t

, Square Wave Pulse Duration(s)

1

JA

1.R

θ

2.Duty Factor, D=t1/t

3.TJM-TA=PDM*R

θJA

4.R

Recommended Soldering Footprint

2

JA

(t)

θ

MTN2310N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 6/8

Carrier Tape Dimension

MTN2310N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 7/8

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

S min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

MTN2310N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 8/8

Marking:

DIM

A

L

3

S

B

1

V

C

D

G

Inches

2

H

Millimeters Inches Millimeters

Min. Max. Min. Max.

Style: Pin 1.Gate 2.Source 3.Drain

K

J

DIM

Min. Max. Min. Max.

TE

2310

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*: Typical

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177

B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN2310N3 CYStek Product Specification