Datasheet MTN2306AN3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

30V N-CHANNEL Enhancement Mode MOSFET

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 1/ 8

MTN2306AN3

BVDSS 30V

ID 5.5A

Features

Low on-resistance

•

Low gate charge

•

Excellent thermal and electrical capabilities

•

Pb-free package

•

Equivalent Circuit Outline

MTN2306AN3

RDSON(TYP)

VGS=10V, ID=5A

VGS=4.5V, ID=5A

VGS=2.5V, ID=2.6A

SOT-23

D

25mΩ

27mΩ

30mΩ

G：Gate
S：Source
D：Drain

G

S

Absolute Maximum Ratings (Ta=25°C)

Parameter
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V

Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2) IDM 30 A
Maximum Power Dissipation @ TA=25℃

Linear Derating Factor

Thermal Resistance, Junction-to-Ambient (Note 3) Rth,ja 90
Operating Junction and Storage Temperature Tj, Tstg -55~+150

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.

Symbol

ID 5.5 A
ID 4.4 A

P

D

Limits Unit

1.38 W

0.01

W/°C

°C/W

°C

MTN2306AN3 CYStek Product Specification

CYStech Electronics Corp.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BV

BV

V

*R

Dynamic

*t

*t

Source-Drain Diode

30 - - V VGS=0, ID=250μA

DSS

/ΔTj - 0.1 -

DSS

0.5 0.8 1.2 V VDS=VGS, ID=250μA

GS(th)

V/°C Reference to 25°C, ID=1mA

GFS - 11 - S VDS=5V, ID=5A

I

- -

GSS

I

DSS

- - 1 μA VDS=25V, VGS=0

- - 25 μA VDS=20V, VGS=0, Tj=70°C

100

nA

VGS=±12V, VDS=0

±

- 25 30 VGS=10V, ID=5A

DS(ON)

- 27 35 VGS=4.5V, ID=5A

- 30 50

mΩ

VGS=2.5V, ID=2.6A

Ciss - 1021 1050

Coss - 44 -

pF VDS=25V, VGS=0, f=1MHz

Crss - 41 -

- 6 -

d(ON)

*tr - 20 -

- 20 -

d(OFF)

ns

VDS=15V, ID=5A, VGS=10V,
RG=3.3Ω, RD=3Ω

*tf - 3 -

*Qg - 9.7 -

*Qgs - 2.7 -

nC VDS=15V, ID=5A, VGS=4.5V

*Qgd - 4.1 -

*VSD - - 1.2 V VGS=0V, IS=1.2A

*trr - 14 - ns

*Qrr - 7 - nC

=5A, VGS=0V, dI/dt=100A/μs

I

S

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 2/ 8

Ordering Information

Device Package Shipping Marking

MTN2306AN3

SOT-23

(Pb-free)

3000 pcs / Tape & Reel 2306A

MTN2306AN3 CYStek Product Specification

CYStech Electronics Corp.

V=2V

Typical Characteristics

Typical Output Characteristics

30

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 3/ 8

Brekdown Voltage vs Ambient Temperature

46

3V,4V,5V,6V,7V,8V,9V,10V

20

, Drain Current(A)

10

D

I

0

012345678910

VDS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

1000

VGS=1.8V

VGS=2V

VGS=2.5V

100

Resistance(mΩ)

, Static Drain-Source On-State

DS(on)

R

VGS=4.5V

VGS=10V

10

0.01 0.1 1 10 100
, Drain Current(A)

I

D

44

42

40

(V)

DSS

38

BV

36

34

Drain-Source Breakdown Voltage

32

30

-75 -50 -25 0 25 50 75 100 125 150 175

ID=250μA,

=0V

V

GS

Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

1.2

VGS=0V

1

Tj=25°C

0.8

0.6

Tj=150°C

, Source-Drain Voltage(V)

SD

0.4

V

0.2
04812162

, Reverse Drain Current(A)

I

DR

0

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

180

160

ID=5A

140

120

100

80

, Static Drain-Source On-

60

State Resistance(mΩ)

DS(on)

40

R

20

, Static Drain-Source On-State

DS(on)

R

0

024681

V

, Gate-Source Voltage(V)

GS

0

Drain-Source On-State Resistance vs Junction Tempearture

60

55

VGS=4.5V, ID=5A

50

45

VGS=2.5V, ID=2.6A

40

35

30

Resistance(mΩ)

25

20

VGS=10V, ID=5A

15

10

-60 -20 20 60 100 140 180

Tj, Junction Temperature(°C)

MTN2306AN3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 4/ 8

Capacitance vs Drain-to-Source Voltage

10000

1000

Crss

100

Capacitance---(pF)

10

0.1 1 10 100
, Drain-Source Voltage(V)

V

DS

Forward Transfer Admittance vs Drain Current

100

10

C

oss

Ciss

Threshold Voltage vs Junction Tempearture

1.2

1

0.8

0.6

, Threshold Voltage-(V)

GS(th)

0.4

V

ID=250μA

ID=1mA

0.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

Gate Charge Characteristics

10

VDS=15V

=5A

I

D

8

1

0.1

, Forward Transfer Admittance(S)

FS

G

0.01

0.001 0.01 0.1 1 10
I

, Drain Current(A)

D

Maximum Safe Operating Area

100

10

1

, Drain Current(A)

D

I

0.1

TA=25°C, Tj=150°C, VGS=10V
Single Pulse

0.01

0.01 0.1 1 10 100

VDS, Drain-Source Voltage(V)

VDS=5V
Pulsed
Ta=25°C

10μs

100μs

1ms

10ms

100ms

DC

6

4

, Gate-Source Voltage(V)

2

GS

V

0

0 2 4 6 8 101214161820

Qg, Total Gate Charge(nC)

Maximum Drain Current vs JunctionTemperature

7

6

5

4

3

2

, Maximum Drain Current(A)

D

1

I

TA=25°C, VGS=10V

0

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

MTN2306AN3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 5/ 8

Typical Transfer Characteristics

80

VDS= 5V

70

60

50

40

30

, Drain Current(A)

D

20

I

10

0

0246810

, Gate-Source Voltage(V)

V

GS

Transient Thermal Response Curves

1

D=0.5

Power Derating Curve

1.6

1.4

1.2

1

0.8

0.6

, Power Dissipation(W)

D

0.4

P

0.2

0

0 50 100 150 200

TA, Ambient Temperature(℃)

Mounted on FR-4 board
with 1 in² pad area

0.2

0.1

0.1

0.05

0.02

Normalized Transient Thermal Resistance

0.01

Single Pulse

0.01

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t

, Square Wave Pulse Duration(s)

1

JA

1.R

(t)=r(t)*R

θ

2.Duty Factor, D=t1/t

3.TJM-TA=PDM*Z

4.R

θJA

=27

θJA

θ

0°C/W

2

JA

(t)

MTN2306AN3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 6/ 8

Carrier Tape Dimension

MTN2306AN3 CYStek Product Specification

CYStech Electronics Corp.

Recommended temperature profile for IR reflow

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 7/ 8

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (T

− Time (t

L)

L)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

Pb-free devices

260 +0/-5 °C

5 +1/-1 seconds

MTN2306AN3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 8/ 8

A

L

3

S

B

1

V

C

D

G

DIM Inches

2

H

Millimeters Inches Millimeters

Min. Max. Min. Max.

Style: Pin 1.Gate 2.Source 3.Drain

K

J

DIM

Min. Max. Min. Max.

TE

2306A

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

*: Typical

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10

Marking:

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN2306AN3 CYStek Product Specification