The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
• Short Heatsink Tab Manufactured – Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
Drain–to–Source VoltageV
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature RangeTJ, T
Single Pulse Drain–to–Source Avalanche Energy – STAR TING TJ = 25°C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/ Locations Not Listed: Motorola Literature Distribution;JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–24473–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
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Motorola TMOS Power MOSFET Transistor Device Data
MTB8N50E/D
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