Datasheet MT5C6408F-25L-IT, MT5C6408F-25L-XT, MT5C6408F-35L-883C, MT5C6408F-35L-IT, MT5C6408F-20L-XT Datasheet (AUSTIN)
...Page 1
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\ and CE2
• All inputs and outputs are TTL compatible
OPTIONS MARKING
• Timing
12ns access -12
15ns access -15
20ns access -20
25ns access -2 5
35ns access -3 5
45ns access -4 5
55ns access -55*
70ns access -70*
• Package(s)
Ceramic DIP (300 mil) C No. 108
Ceramic LCC E C No. 204
Ceramic Flatpack F No. 302
• Operating T emperature Ranges
Industrial (-40oC to +85oC) IT
Military (-55oC to +125oC) XT
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the
45ns access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-38294
• MIL-STD-883
28-Pin DIP (C)
(300 MIL)
28-Pin Flat Pack (F)
28-Pin LCC (EC)
GENERAL DESCRIPTION
The MT5C6408, 8K x 8 SRAM, employs high-speed,
low-power CMOS technology, eliminating the need for clocks
or refreshing. These SRAM’s have equal access and cycle
times.
For flexibility in high-speed memory applications,
Austin Semiconductor offers dual chip enables (CE1\, CE2) and
output enable (OE\) capability. These enhancements can place
the outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The device offers a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
8K x 8 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor .com
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
4 3 2 1 28 27 26
12 13 14 15 16 17 18
5
6
7
8
9
10
11
25
24
23
22
21
20
19
A5
A4
A3
A2
A1
A0
DQ0
A8
A9
A11
OE\
A10
CE1\
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
A6A7A12NCVcc
WE\
CE2\
Page 2
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
FUNCTIONAL BLOCK DIA GRAM
TRUTH TABLE
ROW DECODER
65,536-BIT
MEMORY ARRAY
I/O CONTROL
V
CC
Vss
DQ8
DQ1
CE1\
OE\
WE\
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
COLUMN DECODER
A8 A9 A
10 A11
A
12
POWER
DOWN
CE2
MODE CE1\ CE2 WE\ OE\ DQ POWER
STANDBY H X X X HIGH-Z STANDBY
STANDBY X L X X HIGH-Z STANDBY
READ L H H L Q ACTIVE
READ L H H H HIGH-Z ACTIVE
WRITE L H L X D ACTIVE
Page 3
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
ABSOLUTE MAXIMUM RATINGS*
V oltage on any Input or DQ Relative to Vss........-0.5V to +7.0V
V oltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V
Storage Temperature….........................................-65oC to +150oC
Power Dissipation......................................................................1W
Max Junction T emperature..................................................+175°C
Lead T emperature (soldering 10 seconds)........................+260oC
Short Circuit Output Current................................................50mA
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability .
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
CAPACITANCE
DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS NOTES
Input High (Logic 1) Voltage
V
IH
2.2 Vcc+0.5 V 1
Input Low (Logic 0) Voltage
V
IL
-0.5 0.8 V 1, 2
Input Leakage Current
0V ≤ V
IN
≤ Vcc IL
I
-10 10
µA
Output Leakage Current
Output(s) disabled
0V <
V
OUT
< Vcc
IL
O
-10 10
µA
Output High Voltage
I
OH
= -4.0mA V
OH
2.4 V 1
Output Low Voltage
I
OL
= 8.0mA V
OL
0.4 V 1
SYM -12 -15 -20 -25 -35 -45 UNITS NOTES
I
cc
180 170 160 155 155 145 mA 3
I
SBTSP
40 40 40 40 40 40 mA
I
SBTLP
30 30 30 30 30 30 mA
I
SBCSP
20 20 20 20 20 20 mA
I
SBCLP
10 10 10 10 10 10 mA
Power Supply
Current: Standby
MAX
CE\ >
VIH; All Other Inputs
<
VIL or > VIH, VCC = MAX
f = 0 Hz
CE\ >
(V
CC
-0.2); VCC = MAX
All Other Inputs <
0.2V
or >
(VCC - 0.2V), f = 0 Hz
CONDITIONS
CE\ <
VIL; VCC = MAX
f = MAX = 1/t
RC
(MIN)
Output Open
Power Supply
Current: Operating
PARAMETER
DESCRIPTION CONDITIONS SYM MAX
UNITS
NOTES
Input Capacitance
C
I
6pF 4
Output Capacitance
C
O
7pF 4
T
A
= 25oC, f = 1MHz
Vcc = 5V
Page 4
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time
t
RC
12 15 20 25 35 45 ns
Address access time
t
AA
12 15 20 25 35 45 ns
Chip Enable access time
t
ACE
12 15 20 25 35 45 ns
Output hold from address change
t
OH
200033 ns
Chip Enable to output in Low-Z
t
LZCE
200000 ns7
Chip disable to output in High-Z
t
HZCE
7 1015151525ns6, 7
Output Enable access time
t
AOE
8 1215151520ns
Output Enable to output in Low-Z
t
LZOE
000000 ns
Output disable to output in High-Z
t
HZOE
7 1015153040ns6
WRITE CYCLE
WRITE cycle time
t
WC
12 15 20 25 35 45 ns
Chip Enable to end of write
t
CW
10 13 15 20 30 40 ns
Address valid to end of write
t
AW
10 13 15 20 30 40 ns
Address setup time
t
AS
000000 ns
Address hold from end of write
t
AH
000000 ns
WRITE pulse width
t
WP
10 13 15 20 30 40 ns
Data setup time
t
DS
7 1012151520 ns
Data hold time
t
DH
000055 ns
Write disable to output in Low-Z
t
LZWE
200000 ns7
Write Enable to output in High-Z
t
HZWE
0 7 0 10 0 10 0 15 0 15 0 25 ns 6, 7
DESCRIPTION
-12
SYMBOL
-45-35-25-20-15
Page 5
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
NOTES
1 . All voltages referenced to VSS (GND).
2 . -3V for pulse width < 20ns
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f = 1 Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. t
LZCE
, t
LZWE
, t
LZOE
, t
HZCE
, t
HZOE
and t
HZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
t
HZCE
is less than t
LZCE
, and t
HZWE
is less than t
LZWE
and
t
HZOE
is less than t
LZOE
.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11.tRC = Read Cycle Time.
12 . CE2 timing is the same as CE1\ timing. The waveform is
inverted.
13 . Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
2
3
2
3
1234
1234
1234
1234
DON’T CARE
UNDEFINED
LOW Vcc DA T A RETENTION WA VEFORM
DESCRIPTION SYM MIN MAX UNITS NOTES
V
CC
for Retention Data V
DR
2 --- V
Data Retention Current
CE\ >
(VCC - 0.2V)
V
IN
> (VCC - 0.2V)
or <
0.2V
V
CC
= 2V I
CCDR
300 µA
Chip Deselect to Data
Retention Time
t
CDR
0 --- ns 4
Operation Recovery Time
t
R
t
RC
ns 4, 11
CONDITIONS
VTH = 1.73V
Q
167Ω
30pF
VTH = 1.73V
Q
167Ω
5pF
2
3
2
3
23
4
23
4
2
3
2
3
23
4
23
4
DA TA RETENTION MODE
VDR > 2V
4.5V
4.5V
V
DR
t
CDR
t
R
V
IH
V
IL
V
CC
CE\
Page 6
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
tAA
tOH
tRCtRC
PREVIOUS DATA VALID
VALID
DATA VALID
ADDRESS
DQ
READ CYCLE NO. 1
8, 9
t
RC
t
AA
t
OH
23
4
23
4
23
4
DON’T CARE
UNDEFINED
tPD
tPU
tHZCEtACE
tLZCE
tHZOE
tLZOE
tAOE
tRCtRC
DATA VALID
CE\
OE\
DQ
Icc
READ CYCLE NO. 2
7, 8, 10, 12
t
RC
t
AOE
t
LZOE
t
HZOE
t
HZCE
t
LZCE
t
ACE
t
PU
t
PD
Page 7
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
NOTE: Output enable (OE\) is inactive (HIGH).
WRITE CYCLE NO. 2
7, 12, 13
(Write Enabled Controlled)
23
4
23
4
234
5
234
5
DON’T CARE
UNDEFINED
WRITE CYCLE NO. 1
12
(Chip Enabled Controlled)
tDHtDS
tWP1tWP1
tAH
tCW
tAW
tCWtAS
tWCtWC
HIGH Z
DATA VAILD
ADDRESS
CE\
WE\
D
Q
t
WC
t
AW
t
AS
t
CW
t
AH
t
WP
t
DS
t
DH
1
tDH
tWP1tWP1
tAS
tAW
tCW
tAH
tCW
tWCtWC
DATA VALID
ADDRESS
CE\
WE\
D
Q
HIGH-Z
t
DH
t
DS
t
WC
t
AW
t
AH
t
CW
t
AS
t
WP
234567890123456
7
1
1
234567890123456789012
3
DQ
DQ
Page 8
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
MECHANICAL DEFINITIONS*
ASI Case #108 (Package Designator C)
SMD 5962-38294, Case Outline Z
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
S2
A
Q
L
e
b
b2
S1
D
E
MIN MAX
A --- 0.225
b 0.014 0.026
b2 0.045 0.065
c 0.008 0.018
D --- 1.485
E 0.240 0.310
eA
e
L 0.125 0.200
Q 0.015 0.070
S1 0.005 --S2 0.005 ---
SYMBOL
0.100 BSC
SMD SPECIFICATIONS
0.300 BSC
eA
c
Page 9
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
* All measurements are in inches.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD 5962-38294, Case Outline U
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
A
A1
D3
MIN MAX
A 0.060 0.075
A1 0.050 0.065
B1 0.022 0.028
B2
D 0.342 0.358
D1
D2
D3 --- 0.358
E 0.540 0.560
E1
E2
E3 --- 0.558
e
h
L 0.045 0.055
L2 0.075 0.095
SYMBOL
SMD SPECIFICATIONS
0.072 REF
0.200 BSC
0.100 BSC
0.040 REF
0.050 BSC
0.200 BSC
0.400 BSC
E
D
E3
hx45
o
E1
L2
B1
D1
L
e
B2
E2
D2
h x 45
o
Page 10
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
* All measurements are in inches.
MECHANICAL DEFINITIONS*
ASI Case #302 (Package Designator F)
SMD 5962-38294, Case Outline M
L
c
E2
A
Q
E3
E
MIN MAX
A 0.045 0.115
b 0.015 0.019
c 0.004 0.009
D --- 0.640
E 0.350 0.420
E2 0.180 --E3 0.030 ---
e
L 0.250 0.370
Q 0.026 0.045
S 0.000 ---
SYMBOL
SMD SPECIFICATIONS
0.050 BSC
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
D
e
b
T op View
S
Page 11
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
*AVAILABLE PROCESSES
IT = Industrial T emperature Range -40oC to +85oC
XT = Extended T emperature Range -55oC to +125oC
883C = Full Military Processing -55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
ORDERING INFORMA TION
Device Number
Package
Type
Speed
ns
Options** Process Device Number
Package
Type
Speed
ns
Options** Process
MT5C6408 C -12 L /* MT5C6408 EC -12 L /*
MT5C6408 C -15 L /* MT5C6408 EC -15 L / *
MT5C6408 C -20 L /* MT5C6408 EC -20 L /*
MT5C6408 C -25 L /* MT5C6408 EC -25 L /*
MT5C6408 C -35 L /* MT5C6408 EC -35 L /*
MT5C6408 C -45 L /* MT5C6408 EC -45 L /*
MT5C6408 C -55 L /* MT5C6408 EC -55 L /*
MT5C6408 C -70 L /* MT5C6408 EC -70 L /*
Device Number
Package
Type
Speed
ns
Options** Process
MT5C6408 F -12 L /*
MT5C6408 F -15 L /*
MT5C6408 F -20 L /*
MT5C6408 F -25 L /*
MT5C6408 F -35 L /*
MT5C6408 F -45 L /*
MT5C6408 F -55 L /*
MT5C6408 F -70 L /*
EXAMPLE: MT5C6408C-25L/XT
EXAMPLE: MT5C6408F-55/883C
EXAMPLE: MT5C6408EC-15L/IT
Page 12
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator C
ASI Part # SMD Part #
MT5C6808C-12/883C 5962-3829447MZX
MT5C6808C-12L/883C 5962-3829446MZX
MT5C6808C-20/883C 5962-3829458MZA
MT5C6808C-20L/883C 5962-3829457MZA
MT5C6808C-25/883C 5962-3829456MZA
MT5C6808C-25L/883C 5962-3829455MZA
MT5C6808C-35/883C 5962-3829454MZA
MT5C6808C-35L/883C 5962-3829453MZA
MT5C6808C-45/883C 5962-3829452MZA
MT5C6808C-45L/883C 5962-3829451MZA
MT5C6808C-55/883C 5962-3829450MZA
MT5C6808C-55L/883C 5962-3829449MZA
MT5C6808C-70/883C 5962-3829448MZA
ASI Package Designator EC
ASI Part # SMD Part #
MT5C6808EC-12/883C 5962-3829447MUX
MT5C6808EC-12L/883C 5962-3829446MUX
MT5C6808EC-20/883C 5962-3829458MUA
MT5C6808EC-20L/883C 5962-3829457MUA
MT5C6808EC-25/883C 5962-3829456MUA
MT5C6808EC-25L/883C 5962-3829455MUA
MT5C6808EC-35/883C 5962-3829454MUA
MT5C6808EC-35L/883C 5962-3829453MUA
MT5C6808EC-45/883C 5962-3829452MUA
MT5C6808EC-45L/883C 5962-3829451MUA
MT5C6808EC-55/883C 5962-3829450MUA
MT5C6808EC-55L/883C 5962-3829449MUA
MT5C6808EC-70/883C 5962-3829448MUA
ASI Package Designator F
ASI Part # SMD Part #
MT5C6808F-12/883C 5962-3829447MMX
MT5C6808F-12L/883C 5962-3829446MMX
MT5C6808F-20/883C 5962-3829458MMA
MT5C6808F-20L/883C 5962-3829457MMA
MT5C6808F-25/883C 5962-3829456MMA
MT5C6808F-25L/883C 5962-3829455MMA
MT5C6808F-35/883C 5962-3829454MMA
MT5C6808F-35L/883C 5962-3829453MMA
MT5C6808F-45/883C 5962-3829452MMA
MT5C6808F-45L/883C 5962-3829451MMA
MT5C6808F-55/883C 5962-3829450MMA
MT5C6808F-55L/883C 5962-3829449MMA
MT5C6808C-70/883C 5962-3829448MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
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