Datasheet MT5C1008 Datasheet (ASI)

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Austin Semiconductor, Inc.

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

128K x 8 SRAM

WITH DUAL CHIP ENABLE

AVAILABLE AS MILITARY SPECIFICATIONS

•SMD 5962-89598

•MIL-STD-883

FEATURES

• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns

• Battery Backup: 2V data retention

• Low power standby

• High-performance, low-power CMOS process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE1\, CE2, and OE\ options.

• All inputs and outputs are TTL compatible

OPTIONS MARKING

• Timing

12ns access -12 (contact factory) 15ns access -15 20ns access -2 0 25ns access -2 5 35ns access -3 5 45ns access -4 5 55ns access -55* 70ns access -70*

• Package(s)• Ceramic DIP (400 mil) C No. 111 Ceramic DIP (600 mil) CW No. 112 Ceramic LCC EC No. 207 Ceramic LCC ECA No. 208 Ceramic Flatpack F No. 303 Ceramic SOJ DCJ No. 501 Ceramic SOJ SOJ No. 507

• 2V data retention/low power L

*Electrical characteristics identical to those provided for the 45ns access devices.

For more products and information

please visit our web site at

www.austinsemiconductor.com

PIN ASSIGNMENT

(Top View)

32-Pin DIP (C, CW)

32-Pin CSOJ (SOJ)

NC 1 32 A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE\

A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE\ A2 10 23 A10 A1 11 22 CE\

A0 12 21 DQ8 DQ1 13 20 DQ7 DQ2 14 19 DQ6 DQ3 15 18 DQ5

V

16 17 DQ4

SS

V

CC

32-Pin Flat Pack (F)

NC 1 32 A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE\

A7 5 28 A13

A6 6 27 A8

A5 7 26 A9

A4 8 25 A11

A3 9 24 OE\

A2 10 23 A10

A1 11 22 CE\

A0 12 21 DQ8

DQ1 13 20 DQ7 DQ2 14 19 DQ6 DQ3 15 18 DQ5

V

16 17 DQ4

SS

32-Pin LCC (EC)

32-Pin SOJ (DCJ)

NC 1 32 A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE\

A7 5 28 A13

A6 6 27 A8

A5 7 26 A9

A4 8 25 A11

A3 9 24 OE\

A2 10 23 A10

A1 11 22 CE\

A0 12 21 DQ8

DQ1 13 20 DQ7 DQ2 14 19 DQ6 DQ3 15 18 DQ5

V

16 17 DQ4

SS

32-Pin LCC (ECA)

6

CC

NC

V

A12

A14

A10

A15

CE2

29 28 27 26 25 24 23 22 21

SS

V

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ1

A7 A6 A5 A4 A3 A2 A1 A0

5 6 7 8

9 10 11 12 13

4 3 2 1 32 31 30

14 15 16 17 18 19 20

V

CC

V

CC

\

WE A13 A8 A9 A11 OE

\

A10 CE1

\

DQ8

GENERAL DESCRIPTION

The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.

For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1\, CE2) and output enable (OE\). These control pins can place the outputs in High-Z for additional flexibility in system design. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.

Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power requirements.

The “L” version offers a 2V data retention mode, reducing current consumption to 1mA maximum.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

1

Austin Semiconductor, Inc.

FUNCTIONAL BLOCK DIAGRAM

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

V

CC

A A A A A A A A A

ROW DECODER

(LSB)

A A A A A A A A

1,048,576-BIT

MEMORY ARRAY

COLUMN DECODER

GND

I/O CONTROL

(LSB)

DQ8

DQ1

CE1\

CE2

OE\ WE\

POWER

DOWN

NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.

TRUTH TABLE

MODE OE\ CE1\ CE2 WE\ DQ POWER

STANDBY X H X X HIGH-Z STANDBY STANDBY X X L X HIGH-Z STANDBY READ L L H H Q ACTIVE READ H L H H HIGH-Z ACTIVE WRITE X L H L D ACTIVE

MT5C1008 Rev. 6.5 7/02

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Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage Range (Vcc)...............................-.5V to +6.0V

Storage Temperature ....................................-65°C to +150°C

Short Circuit Output Current (per I/O)….......................20mA

Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V

Max Junction T emperature**.......................................+150°C

Power Dissipation .....................................................................1 W

*Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods will affect reliability. Refer to page 17 of this datasheet for a technical note on this subject. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow , and humidity .

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)

DESCRIPTION CONDITIONS SYM MIN MAX UNITS NOTES

Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current

Output Leakage Current Output High Voltage

Output Low Voltage

0V<

VIN<V

CC

Output(s) disabled

0V<V

OUT<VCC

I

=-4.0mA V

OH

I

=8.0mA V

OL

V

IL

IH

V

IL

I

O

OH OL

2.2

V

+0.5

CC

V1

-0.5 0.8 V 1, 2

-10 10 µA

2.4 V 1

0.4 V 1

PARAMETER

Power Supply Current: Operating

Power Supply Current: Standby

CE\ <

VCC = MAX, f = MAX = 1/tRC (MIN)

CE\=V

CONDITIONS

VIL; OE\, WE\, and CE2>V

Output Open

*L version only

CE2=VIL; Other Inputs at

IH,

VIL, >VIH, VCC = MAX

<

f = 0 Hz

V

CE\ >

V

-0.2V; VCC = MAX

CC

V

< VSS -0.2V

IL

> VCC -0.2V; F = 0 Hz

IH

CAPACITANCE

DESCRIPTION CONDITIONS SYM MAX UNITS NOTES

Input Capacitance (A0-A16) Output Capacitance Input Capacitance (CE\, WE\, OE\)

SYM -12 -15 -20 -25 -35 -45 UNITS NOTES

I

CCSP

IH

I

CCLP *

I

T

= 25oC, f = 1MHz

A

= 5V

V

CC

MAX

250 180 150 140 135 125 mA 3

250 180 140 130 125 115 mA

SBT

SBC

25 25 25 25 25 25 mA

10 10 10 10 10 10 mA

C

I

C

O

C

I

12 pF 4 14 pF 4 20 pF 4

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

3

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

Austin Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)

DESCRIPTION

READ CYCLE

READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z

WRITE CYCLE

WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z

SYMBOL

t

RC

t

AA

t

ACE

t

OH

t

LZCE

t

HZCE

t

AOE

t

LZOE

t

HZOE

t

WC

t

CW

t

AW

t

AS

t

AH

t

WP

t

DS

t

DH

t

LZWE

t

HZWE

MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES

-20

12 15 20 25 35 45 ns

12 15 20 25 35 45 ns 333333 ns 333333 ns4, 6, 7

7 7 8 10 15 20 ns 4, 6, 7 7 7 7 10 15 20 ns 4, 6, 7

000000 ns

7 7 8 10 15 20 ns 4, 6, 7

12 15 20 25 35 45 ns 11 12 15 20 25 35 ns 11 12 15 20 25 35 ns

000000 ns 000005 ns

11 12 15 20 25 35 ns

8 8 10 15 20 20 ns 000000 ns 555555 ns4, 6, 7

7 7 9 10 15 20 ns 4, 6, 7

-25 -35 -45-15-12

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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Austin Semiconductor, Inc.

3

1234

3

4

3

4

3

4

3

4

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

AC TEST CONDITIONS

Input pulse levels ................................... Vss to 3.0V

Input rise and fall times ....................................... 5ns

Input timing reference levels ............................. 1.5V

Output reference levels ..................................... 1.5V

Output load .............................. See Figures 1 and 2

NOTES

1 . All voltages referenced to VSS (GND). 2 . -2V for pulse width < 20ns

3. ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz.

tRC (MIN)

4. This parameter is guaranteed but not tested.

5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted.

6.tLZCE, tLZWE, tLZOE, are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant.

t

HZCE, tHZOE and tHZWE

+5V

480

Q

255

Fig. 1 Output Load

Equivalent

30

Q

255

Fig. 2 Output Load

Equivalent

7. At any given temperature and voltage condition,

t

HZCE is less than tLZCE, and tHZWE is less than

t

LZWE and tHZOE is less than tLZOE.

8. WE\ is HIGH for READ cycle.

9. Device is continuously selected. Chip enables and output enables are held in their active state.

10. Address valid prior to, or coincident with, latest occurring chip enable.

11.tRC = Read Cycle Time.

12 . CE2 timing is the same as CE1\ timing. The

waveform is inverted.

13 . Chip enable (CE1\, CE2) and write enable (WE\) can

initiate and terminate a WRITE cycle.

480

5 pF

DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)

DESCRIPTION SYMBOL MIN MAX UNITS NOTES

V

for Retention Data V

CC

CE\ > (VCC - 0.2V)

Data Retention Current

V

Chip Deselect to Data Retention Time

Operation Recovery Time

CONDITIONS

> (VCC - 0.2V)

IN

0.2V, f=0

or <

= 2V I

V

CC

DR

CCDR

t

CDR

t

R

2 --- V

1.0 mA

0 --- ns 4

t

RC

ns 4, 11

LOW Vcc DA T A RETENTION WA VEFORM

DA TA RETENTION MODE

4.5V

VDR > 2V

V

DR

<VSS + 0.2V

5

4.5V

t

R

2

23

2

23

2

23

2

DON’T CARE UNDEFINED

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

MT5C1008 Rev. 6.5 7/02

V

CE1\

CE2

CC

t

CDR

2

23

V

IH

2

23

V

IL

2

23

V

IH

2

23

V

IL

Austin Semiconductor, Inc.

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

ADDRESS

DQ

PREVIOUS DATA VALID

READ CYCLE NO. 1

tRCtRC

VALID

tAA

tOH

READ CYCLE NO. 2

8, 9

DATA VALID

7, 8, 10, 12

CE\

OE\

DQ

Icc

MT5C1008 Rev. 6.5 7/02

tRCtRC

tAOE

tHZOE

tLZOE

tLZCE

tHZCEtACE

DATA VALID

tPU

tPD

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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Austin Semiconductor, Inc.

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

ADDRESS

CE\

WE\

WRITE CYCLE NO. 1

12, 13

(Chip Enabled Controlled)

tWCtWC

tAW

tAH

tCW

tCWtAS

tWP1tWP1

tDHtDS

D

Q

DATA VAILD

HIGH Z

WRITE CYCLE NO. 2

(Write Enabled Controlled)

ADDRESS

CE\

tAS

WE\

D

Q

NOTE: Output enable (OE\) is inactive (HIGH).

tAW

tWCtWC

tCW

tWP1tWP1

HIGH-Z

7, 12, 13

tAH

tDH

DATA VALID

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #111 (Package Designator C)

SMD 5962-89598, Case Outline Z

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

S1

Pin 1

D

S2

Q

L

L1

NOTE

0o to 15

A

Se

E

o

E1

c

b

b1

SMD SPECIFICATIONS

SYMBOL

MIN MAX

A --- 0.232

b 0.014 0.023

b1 0.038 0.065

c 0.008 0.015 D --- 1.700 E 0.350 0.405

E1 0.390 0.420

e

0.100 BSC

L 0.125 0.200

L1 0.150 ---

Q 0.015 0.060

S --- 0.100

S1 0.005 --S2 0.005 ---

NOTE:

Either configuration in detail A is allowed on SMD.

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

8

Austin Semiconductor, Inc.

MAX

MECHANICAL DEFINITIONS*

ASI Case #112 (Package Designator CW)

SMD 5962-89598, Case Outline X

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

Pin 1

D

e

E

E1

b2

SMD SPECIFICATIONS

SYMBOL

MIN

A 0.089 0.111

b 0.016 0.020 b1 0.045 0.055 b2 0.009 0.011

D 1.585 1.615

E 0.585 0.605

E1 0.595 0.610

e 0.090 0.110

L 0.040 0.060

L1 0.125 0.175

A

L

L1

b

b1

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

9

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #207 (Package Designator EC)

SMD 5962-89598, Case Outline U

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

E

L1

D

L

e

b

Detail A

L2

b1

SMD SPECIFICATIONS

SYMBOL

MIN MAX

A 0.080 0.100

b 0.022 0.028 b1 0.006 0.022 b2 0.040 ---

D 0.800 0.840 E 0.392 0.408

e

h

0.050 BSC

0.012 REF

L 0.070 0.080 L1 0.090 0.110 L2 0.003 0.015

See Detail A

o

h x 45

A

b2

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

10

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #208 (Package Designator ECA)

SMD 5962-89598, Case Outline M

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

D1

L1

E

D

Detail A

E1

b

b1

e

See Detail A

L

A

b2

SMD SPECIFICATIONS

SYMBOL

MIN MAX

A 0.060 0.120

b 0.022 0.028 b1 0.004 0.014 b2 0.040 ---

D 0.442 0.458

D1

0.300 BSC

E 0.540 0.560

E1

e

0.400 BSC

0.050 BSC

L 0.045 0.055 L1 0.075 0.095

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

11

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #303 (Package Designator F)

SMD 5962-89598, Case Outline T

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

L

S1

E

Pin 1

e

b

S

E1

D

32

17 16

Bottom View

Index

1

T op View

c

E3

E2

A

Q

SYMBOL

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

SMD SPECIFICATIONS

MIN MAX

A 0.097 0.125

b 0.015 0.019

c 0.003 0.009 D --- 0.830 E 0.400 0.420

E1 --- 0.450 E2 0.180 --E3 0.030 ---

e

L 0.250 0.370 Q 0.026 0.045 S --- 0.045

S1 0.000 ---

0.050 BSC

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

12

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #501 (Package Designator DCJ)

SMD 5962-89598, Case Outline 7

A

A2

e

b

SYMBOL

A 0.132 0.144 A2 0.026 0.036 B1 0.030 0.040

b 0.015 0.019

D 0.812 0.828

D1 0.740 0.760

E 0.405 0.415 E1 0.435 0.445 E2 0.360 0.380

e

D1

E

SMD SPECIFICATIONS

MIN MAX

D

B1

0.050 BSC

E2

E1

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

13

Austin Semiconductor, Inc.

5

3

MECHANICAL DEFINITIONS*

ASI Case #507 (Package Designator SOJ)

See Detail A

SMD 5962-89598, Case Outline Y

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

A1

D1

b

e

S

A

j

32

17

E

E1

1

23456789012345678901234

B

B2

D

16

B1

Base Plane

E2

e2

e1

232

A2

B3

Seating Plane

S1

Detail A

SMD SPECIFICATIONS

SYMBOL

MIN MAX

A 0.120 0.165 A1 0.088 0.120 A2

B B1 B2

0.070 REF

0.010 REF

0.030R TYP

0.020 REF

B3 0.025 0.045

b 0.015 0.019

D 0.816 0.838

D1

0.750 REF

E 0.419 0.431 E1 0.430 0.445 E2 0.360 0.380

e

e1

0.050 BSC

0.038 TYP

e2 0.005 ---

j

0.005 TYP

S 0.030 0.040 S1

0.020 TYP

*All measurements are in inches.

MT5C1008 Rev. 6.5 7/02

14

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

yp

ORDERING INFORMATION

EXAMPLE: MT5C1008CW-45/883C EXAMPLE: MT5C1008ECA-25L/XT

Device

Number

MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008

Package

T

e

C CW-12

C CW-15

C CW-20

C CW-25

C CW-35

C CW-45

C CW-55

C CW-70

Speed

ns

-12

-15

-20

-25

-35

-45

-55

-70

Options** Process

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

Device

Number

MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008

Package

T

e

EC

ECA

EC

ECA

EC

ECA

EC

ECA

EC

ECA

EC

ECA

EC

ECA

EC

ECA

Speed

ns

-12

-15

-20

-25

-35

-45

-55

-70

Options** Process

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

EXAMPLE: MT5C1008F-25L/883C EXAMPLE: MT5C1008DCJ-35/IT

e

Speed

ns

Options** Process

Device

Number

MT5C1008 F -12 L /*

MT5C1008 F -15 L /*

MT5C1008 F -20 L /*

MT5C1008 F -25 L /*

MT5C1008 F -35 L /*

MT5C1008 F -45 L /*

MT5C1008 F -55 L /*

MT5C1008 F -70 L /*

Package

T

Device

Number

MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008

Package

T

e

DCJ SOJ DCJ SOJ DCJ SOJ DCJ SOJ DCJ SOJ DCJ SOJ DCJ SOJ DCJ SOJ

Speed

ns

-12

-15

-20

-25

-35

-45

-55

-70

*AVAILABLE PROCESSES

IT = Industrial T emperature Range -40oC to +85oC XT = Extended T emperature Range -55oC to +125oC 883C = Full Military Processing -55oC to +125oC

Options** Process

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

L L /*

/*

MT5C1008 Rev. 6.5 7/02

** OPTIONS

L = 2V Data Retention/Low Power

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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Austin Semiconductor, Inc.

ASI TO DSCC PART NUMBER

CROSS REFERENCE

SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

ASI Package Designator C & CW

ASI Part # SMD Part #

MT5C1008C-20/883C 5962-8959838MZA MT5C1008C-20L/883C 5962-8959821MZA MT5C1008C-25/883C 5962-8959837MZA MT5C1008C-25L/883C 5962-8959820MZA MT5C1008C-35/883C 5962-8959836MZA MT5C1008C-35L/883C 5962-8959819MZA MT5C1008C-45/883C 5962-8959835MZA MT5C1008C-45L/883C 5962-8959818MZA MT5C1008C-55/883C 5962-8959834MZA MT5C1008C-55L/883C 5962-8959817MZA MT5C1008C-70/883C 5962-8959833MZA MT5C1008C-70L/883C 5962-8959816MZA

MT5C1008CW-20/883C 5962-8959838MXA MT5C1008CW-20L/883C 5962-8959821MXA MT5C1008CW-25/883C 5962-8959837MXA MT5C1008CW-25L/883C 5962-8959820MXA MT5C1008CW-35/883C 5962-8959836MXA MT5C1008CW-35L/883C 5962-8959819MXA MT5C1008CW-45/883C 5962-8959835MXA MT5C1008CW-45L/883C 5962-8959818MXA MT5C1008CW-55/883C 5962-8959834MXA MT5C1008CW-55L/883C 5962-8959817MXA MT5C1008CW-70/883C 5962-8959833MXA

MT5C1008CW-70L/883C 5962-8959816MXA

ASI Package Designator EC & ECA

ASI Part # SMD Part #

MT5C1008EC-20/883C 5962-8959838MUA MT5C1008EC-20L/883C 5962-8959821MUA MT5C1008EC-25/883C 5962-8959837MUA MT5C1008EC-25L/883C 5962-8959820MUA MT5C1008EC-35/883C 5962-8959836MUA MT5C1008EC-35L/883C 5962-8959819MUA MT5C1008EC-45/883C 5962-8959835MUA MT5C1008EC-45L/883C 5962-8959818MUA MT5C1008EC-55/883C 5962-8959834MUA MT5C1008EC-55L/883C 5962-8959817MUA MT5C1008EC-70/883C 5962-8959833MUA MT5C1008EC-70L/883C 5962-8959816MUA

MT5C1008ECA-20/883C 5962-8959838MMA MT5C1008ECA-20L/883C 5962-8959821MMA MT5C1008ECA-25/883C 5962-8959837MMA MT5C1008ECA-25L/883C 5962-8959820MMA MT5C1008ECA-35/883C 5962-8959836MMA MT5C1008ECA-35L/883C 5962-8959819MMA MT5C1008ECA-45/883C 5962-8959835MMA MT5C1008ECA-45L/883C 5962-8959818MMA MT5C1008ECA-55/883C 5962-8959834MMA MT5C1008ECA-55L/883C 5962-8959817MMA MT5C1008ECA-70/883C 5962-8959833MMA MT5C1008ECA-70L/883C 5962-8959816MMA

ASI Package Designator F

ASI Part # SMD Part #

MT5C1008F-20/883C 5962-8959838MT A MT5C1008F-20L/883C 5962-8959821MT A MT5C1008F-25/883C 5962-8959837MT A MT5C1008F-25L/883C 5962-8959820MT A MT5C1008F-35/883C 5962-8959836MT A MT5C1008F-35L/883C 5962-8959819MT A MT5C1008F-45/883C 5962-8959835MT A MT5C1008F-45L/883C 5962-8959818MT A MT5C1008F-55/883C 5962-8959834MT A MT5C1008F-55L/883C 5962-8959817MT A MT5C1008F-70/883C 5962-8959833MT A MT5C1008F-70L/883C 5962-8959816MT A

* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.

MT5C1008 Rev. 6.5 7/02

ASI Package Designator DCJ & SOJ

ASI Part # SMD Part #

MT5C1008DCJ-20/883C 5962-8959838M7A MT5C1008DCJ-20L/883C 5962-8959821M7A MT5C1008DCJ-25/883C 5962-8959837M7A MT5C1008DCJ-25L/883C 5962-8959820M7A MT5C1008DCJ-35/883C 5962-8959836M7A MT5C1008DCJ-35L/883C 5962-8959819M7A MT5C1008DCJ-45/883C 5962-8959835M7A MT5C1008DCJ-45L/883C 5962-8959818M7A MT5C1008DCJ-55/883C 5962-8959834M7A MT5C1008DCJ-55L/883C 5962-8959817M7A MT5C1008DCJ-70/883C 5962-8959833M7A MT5C1008DCJ-70L/883C 5962-8959816M7A

MT5C1008SOJ-20/883C 5962-8959838MYA MT5C1008SOJ-20L/883C 5962-8959821MYA MT5C1008SOJ-25/883C 5962-8959837MYA MT5C1008SOJ-25L/883C 5962-8959820MYA MT5C1008SOJ-35/883C 5962-8959836MYA MT5C1008SOJ-35L/883C 5962-8959819MYA MT5C1008SOJ-45/883C 5962-8959835MYA MT5C1008SOJ-45L/883C 5962-8959818MYA MT5C1008SOJ-55/883C 5962-8959834MYA MT5C1008SOJ-55L/883C 5962-8959817MYA MT5C1008SOJ-70/883C 5962-8959833MYA MT5C1008SOJ-70L/883C 5962-8959816MYA

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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SRAMSRAM

SRAM

SRAMSRAM

MT5C1008

Austin Semiconductor, Inc.

DATE: 2/6/01

Technical Note:

128Kx8 SRAM – Maximum Recommended Supply Voltage and Ambient Temperature

Compliance:

This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78.

Specific Product Affected:

Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device T ypes: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100.

Characteristic Identified:

Austin Semiconductor, Inc. has received notification from this die vendor , Alliance Semiconductor Corp., that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause permanent damage to the device.

Recommendation:

During use in system applications and during manufacturing processes, including Burn-In and T est, the devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.

MT5C1008 Rev. 6.5 7/02

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Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.