Page 1
PRELIMINARY
NOTE:
128Mb x16
SDRAM Addendum
‡
SYNCHRONOUS
DRAM
FEATURES
• Supports PC100 and PC133 functionality
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT AUTO
PRECHARGE, and Auto Refres h Modes
• Self Refresh Mode; standard and low power
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• 64ms, 4,096-cycle refresh
OPTION MARKING
• Configuration
8 Meg x 16 (2 Meg x 16 x 4 banks) 8M16
WRITE Recovery (
t
WR = “2 CLK”
•Package
Plastic Package – OCPL
54-pin TSOP II (400 mil) TG
• Timing (Cycle Time)
6.0ns @ CL = 3 -6A
• Self Refresh
Standard None
•Operating Temperature Range
Commercial (0
t
WR)
1
2
o
C to +70oC) None
A2
MT48LC8M16A2 – 2 MEG X 16 X 4 BANKS
For the latest data sheet, please refer to the Micron Web
site: www.micron.com/dramds
ADDENDUM CHANGES
The standard 128Mb SDRAM data sheets also pertain to the x16 device and should be referenced for a
complete description of SDRAM functionality and
operating modes. However, to meet the faster speed
grades, some of the AC timing parameters are slightly
different. This addendum data sheet will concentrate
on the key differences required to support the
enhanced speeds.
The Micron 128Mb data sheet provides full specifications and functionality unless specified herein.
8 MEG X 16
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
KEY TIMING PARAMETERS
SPEED
GRADE
-6A 167 MHz 5.4ns 1.5ns 0.8ns
CLOCK
FREQUENCY
ACCESS
TIME
CL = 3*
SETUP
TIME
HOLD
TIME
1. Refer to Micron Technical Note: TN-48-05.
2. Off-center pa r t ing line.
Part Number:
MT48LC8M16A2TG-6A
x16 Addendum Micron Technology, Inc., reserves the right to ch ange products or specifications without noti ce.
MT48lc8m16a2_addendum.fm - Rev. 7/02
‡
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTI ON DATA SHEET SPECIFICATIONS.
1 ©2002, Micron Technology Inc.
Page 2
PRELIMINARY
128Mb x16
SDRAM Addendum
IDD SPECIFICATIONS AND CONDITIONS
Notes: 1, 5, 6, 11, 13; notes appear in the standard data sheet; VDD/VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION SYMBOL -6A UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
t
RC = tRC (MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active
t
after
RCD met;
No accesses in progress
Operating Current: Burst Mode; Continuous
burst; READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Self Refresh Current:
CKE ≤ 0.2V
t
RFC = tRFC (MIN)
t
RFC = 15.625µs
Standard I
DD1
I
I
DD2
DD3
I
DD4
I
I
DD5
I
DD6
DD7
170 mA 3, 18,
19, 32
2mA32
50 mA 3, 12,
19, 32
165 mA 3, 18,
19, 32
330 mA 3, 12,
3mA
18, 19,
32, 33
2mA4
x16 Addendum Micron Technology, Inc., reserves the right to ch ange products or specifications without noti ce.
MT48lc8m16a2_addendum.fm - Rev 7/02
2 ©2002, Micron Technology Inc.
Page 3
PRELIMINARY
128Mb x16
SDRAM Addendum
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Notes 5, 6, 8, 9,11; Notes appear on in the standard data sheet
AC CHARACTERISTICS -6A
PARAMETER SYMBOL MIN MAX UNITS NOTES
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Tra nsition time
WRITE recovery time
1
Exit SELF REFRESH to ACTIVE command
NOTE:
1. Auto precharge mode only. The precharge timing budget (
executed. May not exceed limit set for precharge mode.
CL = 3
CL = 3
CL = 3
t
RP) begins 6ns for -6A after the first clock delay, after the last WRITE is
t
AC(3)
t
AH
t
AS
t
CH
t
CL
t
CK(3)
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ(3)
t
LZ
t
OH
t
OH
t
RAS
t
RC
t
RCD
t
REF
t
RFC
t
RP
t
RRD
t
T
t
WR
t
XSR
5.4 ns 27
0.8 ns
1.5 ns
2.5 ns
2.5 ns
6ns23
0.8 ns
1.5 ns
0.8 ns
1.5 ns
0.8 ns
1.5 ns
5.4 ns 10
1ns
3ns
N
1.8 ns 28
42 120,000 ns
60 ns
18 ns
64 ms
60 ns
18 ns
12 ns 7
0.3 1.2 ns
1 CLK +
ns
6ns
12 ns 25
67 ns 20
x16 Addendum Micron Technology, Inc., reserves the right to ch ange products or specifications without noti ce.
MT48lc8m16a2_addendum.fm - Rev 7/02
3 ©2002, Micron Technology Inc.
Page 4
PRELIMINARY
128Mb x16
SDRAM Addendum
AC FUNCTIONAL CHARACTERISTICS
Notes appear in the standard data sheet.
PARAMETER SYMBOL -6A SPEED UNITS NOTES
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or
t
CCD
t
CKED
t
PED
t
DQD
t
DQM
t
DQZ
t
DWD
t
DAL
t
DPL
t
BDL
t
CDL
t
RDL
t
MRD
1
1
1
0
0
2
0
5
2
1
1
2
2
REFRESH command
Data-out to high-impedance from PRECHARGE
t
ROH(3)
3
command (CL=3)
NOTE:
1. The Note 21 in the standard data sheet does not apply for this speed grade and should read “Based on
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK 15, 21
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK = 6ns”
17
14
14
17
17
17
17
16, 21
17
17
16, 21
26
17
1
DATA SHEET DESIGNATION
Preliminary: This data she et cont ains initial c haracterization limits that are subject to change upon full
characterization of production devices.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, T el: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micro n.com, Customer Comment Line: 800-932-4992
Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc.
x16 Addendum ©2002, Micron Technology Inc.
MT48lc8m16a2_addendum.fm - Rev 7/02
4
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