Datasheet MT3401 Datasheet (Mos-Tech) [ru]

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Page 1

茂钿半導體股份有限公司

Mos-Tech Semiconductor Co.,LTD

P-Channel Enhancement Mode Field Effect Transistor

D S

FEATURES

● Super high dense cell design for low RDS(ON)

● Rugged and reliable

● Simple drive requirement

● SOT-23 package

NOTE：The MT3401 is available

in a lead-free package

S G

PRODUCT SUMMARY

VDSS ID

-30V -5.6A

RDS(ON) (mΩ) Typ

45@ VGS=-10V

65 @ VGS=-4.5V

MT3401

ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）

Parameter Sym bol Limit Unit

Drain-Source Voltage

Gate-Source Voltage VGS ±20 V Drain Current-Continuousª@Tj=125℃

- Pulse

Drain-source Diode Forward Currentª IS -1.5 A Maximum Power Dissipationª PD 1.5 W

Operating Junction and Storage

Temperature Range

DS -30 V

D -5.6 A

IDM -25 A

J,TSTG -55 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to Ambientª Rth JA 90 ℃/W

Page 2

茂钿半導體股份有限公司

ELECTRICAL CHARACTERISTICS (T

Mos-Tech Semiconductor Co.,LTD

Parameter Sym bol Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERITICS

Gate Threshold Voltage VGS(th) V DS=VGS,ID=-250µA -1.2 -2.0 V

Drain-Source On-State Resistance RDS(ON)

A=25℃ unless otherwise noted)

DSS

GSS

GS=0V,ID=-250µA -30 V

DS=-30V,VGS=0V 1 µA

GS=±10V,VDS=0V ±100 nA

GS=-10V,ID=-4.6A 45 50

VGS=-4.5V,ID=-3.0A 65 70

MT3401

mΩ

Forward Transconductance

DAYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISISTICS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

ISS

OSS

RSS

D(ON)

D(OFF)

Qgs

Qgd

GS=-10V,ID=-1.7A 17 S

1226 pF

DS=-15V,VGS=0V

f=1.0MH

187 pF

91 pF

DD=-15V

D=-1.0A,

GEN=-10V

L=15ohm

GEN=6ohm

5.9 ns

6.9 ns

48 ns

16 ns

9.8 nC

DS=-15V,ID=-1.7A

GS=-10V

1.8 nC

4.5 nC

Page 3

茂钿半導體股份有限公司

Mos-Tech Semiconductor Co.,LTD

MT3401

ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)

Parameter Sym bol Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage VSD VGS=0V,IS=-1.25A -0.8 -1.2 V

Notes

a. Surface Mounted on FR4 Board, t≦10sec b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2% c. Guaranteed by design, not subject to production testing.

-ID,Drain Current(A)

-ID, Drain Current (A)

- VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics

VGS=-10V

ID=-1.7A

C,Capacitance(pF)

RDS(ON), On-Resistance(mΩ)

- VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with

Temperature

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茂钿半導體股份有限公司

Mos-Tech Semiconductor Co.,LTD

0.5

0.4

0.3

0.2

0.1

0.0

Vth, Normalized

-0.1

-0.2

Gate-Source Threshold Voltage

ɡFS,Transconductance(S)

-VGS,Gate to Source Voltage

--50 -25 0 25 50 75 1 00 12 5

Tj,. Junction Temperature(℃)

Figure5.Gate Threshold Variation

With Temperature

0 5 10 15 20 25 30

-IDS, Drain-Source Current (A)

Figure7.Transconductance Variation

With Drain Current

VDS=-15V

D=-1.7A

0 1 2 3 4 5 6 7

Qɡ, Total Gate Charge(nC)

Figure9. Gate Charge

ID=-250uA

VGS=-5V

Is-Source Currenti(A)

-Is,Source-drain current(A) 0

0.1

-ID,Drain Current(A)

0.03

TJ=150℃

0.2 0. 4 0. 6 0.8 1. 0 1. 2 1.4 1. 6

TJ=25℃

VSD-Soures-to-Drain Voltage(V)

0.6 0. 8 1. 0 1. 2 1. 4 1. 6

Tj=25℃

-VSD, Body Diode Forward Voltage

Figure8.Body Diode Forward Voltage

Variation with Source Current

0.1 1 10 20 50

-VDS, Drain-Source Voltage(V)

Figure10.Maximum Safe Operating Area

MT3401

Page 5

SOT-23 Std Tape and Reel Data

SOT23-3L Packaging Configuration: F igure 1.0

Cus tomized Lab el

SOT23-3L Packaging Information

Packaging Option

Packaging type

Qty per Reel/Tube/Bag 3,000 10,000

Reel Size

Box Dimension (mm) 193x 183x8 0 355x333 x40

Max qty per Box 15, 000 30, 000

Weight per unit (gm ) 0.0082 0.0082

Weight per Reel (kg) 0. 1175 0.4006

Note/Comments

S tandard

(no flow code)

TN R

7" D ia

D87Z

TN R

13"

ACTR Label



Antis tatic Cover Tape

E mbosse d

Carri er Tape

038I

03 X X

03：PartNO.

Packaging Description:

S OT23- 3L parts ar e shipped i n tape. T he ca rrier tape is made from a di ss ipative ( carbon filled) polyc arbonate res in. T he cove r tape i s a m ultilayer film (H eat Ac tivated Adhes ive in nat ure) pr imarily c omposed of pol yester film, adhes ive l a yer, seal an t, and anti-s tatic s praye d ag ent. Thes e re eled parts in s tandard option ar e s hipped with 3,000 units per 7" or 177mm diamete r reel. The r eels ar e dark blue in color and is made o f polystyrene p las tic (antistatic coated) . O ther option come s in 10, 000 units per 13" or 330c m diameter reel. T his and s ome other options ar e desc ribed in the P a cka ging Information table.

Thes e f ull reels are i ndividually labeled and placed inside a s tandard imme diate box made o f r ecyclable corrugated brown paper w ith a F airc hild logo p rinting. O ne box contains five r eels maxim um. And these immediate boxes are placed ins ide a labe led s hipping box w hich comes in different s izes depending on the number of pa rts s hipped.

038I 038I 038I

SOT23-3L Unit Orientation

MARKING DIAGRAM

X:MonthCode

X:YearCode

B arcode Lab el

B arcode L a bel s ample

XH1 MT3401AACTR

XH2 C97I27K1-038I-K133 M13274DSPEC :

MOS-TECH SEMICONDUCTOR LTD (ACTR)

QT Y: 3000

B L

193m m x 183m m x 80m m

P izza B ox f or S tandard O ption

SOT23-3L Tape Leader and Trailer Configuration: F igure 2.0

C arrier Tape

C over T ape

Tra iler Ta pe 300mm mi nimum or 75 em pty pock ets

C omponents

Leade r T ape 500mm mi nimum or 125 empty pockets

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SOT-23 Std Tape and Reel Data, continued

SOT23-3L Embossed Carrier Tape Configuration: Figure 3.0

D0P0 P2

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOT-23

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movem ent requirements (see sketches A, B, and C).

SOT23-3L Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.15

2.77

8.0

1.55

1.125

1.75

6.25

+/-0.10

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

+/-0.3

+/-0.05

+/-0.125

+/-0.10

3.50

min

+/-0.05

20 deg maximum

Sketch B (T op View)

Component Rotation

W1 Measured at Hub

4.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

4.0 +/-0.1

1.30

0.228 +/-0.013

5.2 +/-0.3

0.5mm maximum

+/-0.10

0.5mm maximum

Sketch C (Top View)

Component la teral movement

0.06 +/-0.02

Dim A

max

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim N

See detail AA

7" Diameter Option

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00 330

1.5

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 - 0.429

7.9 - 10. 9

0.311 - 0.429

7.9 - 10. 9

October 2005, Rev. D1

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MOS-TECH Semiconductor Co.,LTD

  

Notes regarding these materials

1. This document is provided for reference purposes only so that Mos-tech customers may select the appropriate Mos-tech products for their use. Mos-tech neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Mos-tech or any third party with respect to the information in this document.

2. Mos-tech shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.

3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations.

4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Mos-tech products listed in this document, please confirm the latest product information with a Mos-tech sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Mos-tech such as that disclosed through our website. (http://www.mtsemi.com )

5. Mos-tech has used reasonable care in compiling the information included in this document, but Mos-tech assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document.

6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Mos-tech makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Mos-tech products.

7. With the exception of products specified by Mos-tech as suitable for automobile applications, Mos-tech products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Mos-tech sales office beforehand. Mos-tech shall have no liability for damages arising out of the uses set forth above.

8. Notwithstanding the preceding paragraph, you should not use Mos-tech products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Mos-tech shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Mos-tech products in any of the foregoing applications shall indemnify and hold harmless Mos-tech Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications.

9. You should use the products described herein within the range specified by Mos-tech, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Mos-tech shall have no liability for malfunctions or damages arising out of the use of Mos-tech products beyond such specified ranges.

10. Although Mos-tech endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Mos-tech product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

11. In case Mos-tech products listed in this document are detached from the products to which the Mos-tech products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Mos-tech products may not be easily detached from your products. Mos-techshall have no liability for damages arising out of such detachment.

12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Mos-tech.

13. Please contact a Mos-tech sales office if you have any questions regarding the information contained in this document, Mos-tech semiconductor products, or if you have any other inquiries.

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⊼ᛣ

ᴀ᭛াᰃখ㗗䆥᭛ˈࠡ义᠔䕑㣅᭛⠜“Cautions”݋᳝ℷᓣᬜ࡯Ǆ

݇Ѣ߽⫼ᴀ䌘᭭ᯊⱘ⊼ᛣџ乍

1. ᴀ䌘᭭ᰃЎњ䅽⫼᠋ḍ᥂⫼䗨䗝ᢽড়䗖ⱘᴀ݀ৌѻકⱘখ㗗䌘᭭ˈᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘᡔᴃֵᙃˈᑊ䴲ᛣ ⴔᇍᴀ݀ৌ៪㗙㄀ϝ㗙ⱘⶹ䆚ѻᴗঞ݊Ҫᴗ߽خߎֱ䆕៪ᇍᅲᮑᴗ࡯䖯㸠ⱘᡓ䇎Ǆ

2. ᇍѢ಴Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ǃ⿟ᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟㗠ᓩ䍋ⱘᤳᆇ៪㗙ᇍ㄀ϝ㗙ⱘ ⶹ䆚ѻᴗঞ݊Ҫᴗ߽䗴៤։⢃ˈᴀ݀ৌϡᡓᢙӏԩ䋷ӏǄ

3. ϡ㛑ᇚᴀ䌘᭭᠔䆄䕑ⱘѻકᡔᴃ⫼Ѣ໻㾘῵⸈ണᗻ℺఼ⱘᓔথㄝⳂⱘǃݯџⳂⱘ៪݊Ҫⱘݯ䳔⫼䗨ᮍ䴶Ǆ ঺໪ˈ೼ߎষᯊᖙ乏䙉ᅜ中国ⱘǉ໪∛ঞ໪೑䌌ᯧ⊩Ǌঞ݊ҪߎষⱘⳌ݇⊩Ҹᑊሹ㸠䖭ѯ⊩ҸЁ㾘ᅮⱘᖙ㽕 ᠟㓁Ǆ

4. ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ǃ⿟ᑣǃㅫ⊩ҹঞ݊Ҫᑨ⫼⬉䏃՟ㄝ᠔ֵ᳝ᙃഛЎᴀ䌘᭭থ㸠ᯊⱘݙᆍˈ ᴀ݀ৌ᳝ৃ㛑೼᳾خџܜ䗮ⶹⱘᚙމϟˈᇍᴀ䌘᭭᠔䆄䕑ⱘѻક៪㗙ѻક㾘Ḑ䖯㸠᳈ᬍǄ᠔ҹ೼䌁фՓ⫼ ᴀ݀ৌⱘᇐԧѻકПࠡˈ䇋џܜ৥ᴀ݀ৌⱘ㧹Ϯにষ⹂䅸᳔ᮄⱘֵᙃᑊ㒣ᐌ⬭ᛣᴀ݀ৌ䗮䖛݀ৌЏ义

(http://www.mtsemi.com)ㄝ݀ᓔⱘ᳔ᮄֵᙃǄ

5. ᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘֵᙃˈࠊ԰ᯊ៥Ӏሑ࡯ֱ䆕ߎ⠜ᯊⱘ㊒⹂ᗻˈԚϡᡓᢙ಴ᴀ䌘᭭ⱘভ䗄ϡᔧ㗠㟈Փ乒

ᅶ䙁ফᤳ༅ㄝⱘӏԩⳌ݇䋷ӏǄ

6. ೼Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ㄝ᠔⼎ⱘᡔᴃݙᆍǃ⿟ᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟ᯊˈϡҙ㽕ᇍ᠔ Փ⫼ⱘᡔᴃֵᙃ䖯㸠⣀䆘Ӌˈ䖬㽕ᇍᭈϾ㋏㒳䖯㸠ܙߚⱘ䆘ӋǄ䇋乒ᅶ㞾㸠䋳䋷ˈ䖯㸠ᰃ৺䗖⫼ⱘ߸ᮁǄ ᴀ݀ৌᇍѢᰃ৺䗖⫼ϡ䋳ӏԩ䋷ӏǄ

7. ᴀ䌘᭭Ё᠔䆄䕑ⱘѻકᑊ䴲䩜ᇍϛϔߎ⦄ᬙ䱰៪ᰃ䫭䇃䖤㸠ህӮ࿕㚕ࠄҎⱘ⫳៪㒭Ҏԧᏺᴹᆇⱘᴎ఼ǃ ㋏㒳བ৘⾡ᅝܼ㺙㕂៪㗙䖤䕧Ѹ䗮⫼ⱘǃ⭫ǃ➗⚻᥻ࠊǃ㟾໽఼ẄǃḌ㛑ǃ⍋ᑩЁ㒻⫼ⱘᴎ఼㋏㒳ㄝ 㗠䆒䅵ࠊ䗴ⱘ⡍߿ᰃᇍѢક䋼ৃ䴴ᗻ㽕∖ᵕ催ⱘᴎ఼㋏㒳ㄝ˄ᇚᴀ݀ৌᣛᅮ⫼Ѣ≑䔺ᮍ䴶ⱘѻક⫼ Ѣ≑䔺ᯊ䰸໪˅Ǆབᵰ㽕⫼ѢϞ䗄ⱘⳂⱘˈ䇋ࡵᖙџܜ৥ᴀ݀ৌⱘ㧹Ϯにষ䆶Ǆ঺໪ˈᇍѢ⫼ѢϞ䗄Ⳃⱘ 㗠䗴៤ⱘᤳ༅ㄝˈᴀ݀ৌὖϡ䋳䋷Ǆ

8. 䰸Ϟ䗄㄀乍ݙᆍ໪ˈϡ㛑ᇚᴀ䌘᭭Ё䆄䕑ⱘѻક⫼Ѣҹϟ⫼䗨Ǆབᵰ⫼Ѣҹϟ⫼䗨㗠䗴៤ⱘᤳ༅ˈᴀ݀ৌ ὖϡ䋳䋷Ǆ

1˅⫳㓈ᣕ㺙㕂Ǆ 2˅ỡඟѢҎԧՓ⫼ⱘ㺙㕂Ǆ 3˅⫼Ѣ⊏⭫˄ߛ䰸ᙷ䚼ǃ㒭㥃ㄝ˅ⱘ㺙㕂Ǆ 4˅݊ҪⳈ᥹ᕅડࠄҎⱘ⫳ⱘ㺙㕂Ǆ

9. ೼Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻકᯊˈᇍѢ᳔໻乱ᅮؐǃᎹ԰⬉⑤⬉ⱘ㣗ೈǃᬒ⛁⡍ᗻǃᅝ㺙ᴵӊঞ݊Ҫᴵӊ䇋 ೼ᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈݙՓ⫼Ǆབᵰ䍙ߎњᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈՓ⫼ᯊˈᇍѢ⬅ℸ㗠䗴៤ⱘᬙ䱰ߎ⦄ ⱘџᬙˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏǄ

10.ᴀ݀ৌϔⳈ㟈࡯Ѣᦤ催ѻકⱘ䋼䞣ৃ䴴ᗻˈԚϔ㠀ᴹ䇈ˈᇐԧѻકᘏӮҹϔᅮⱘὖ⥛থ⫳ᬙ䱰ǃ៪㗙⬅ ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝǄЎњ䙓ܡ಴ᴀ݀ৌⱘѻકথ⫳ᬙ䱰៪㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ☿♒ ៪䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵 ˄ࣙᣀ⹀ӊ䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃ԰Ўᴎ఼㋏㒳ⱘߎֱ䆕Ǆ⡍߿ᰃ⠛ᴎⱘ䕃ӊˈ ⬅Ѣ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖೼乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠Ꮉ԰Ǆ

11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒໛Ϟϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘ䰽Ǆ乒ᅶ೼ᇚᴀ݀ৌѻકᅝ㺙ࠄ 乒ᅶⱘ䆒໛Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵ǄབᵰҢ乒ᅶⱘ䆒໛Ϟ࠹㨑㗠䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏǄ

12.೼᳾ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ៪㗙ܼ䚼䕀䕑៪㗙໡ࠊǄ

13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ៪㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋৥ᴀ݀ৌⱘ㧹Ϯにষ䆶Ǆ

Keep safety first in your circuit designs!

1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

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Datasheet MT3401 Datasheet (Mos-Tech) [ru]

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