
Description Package Dimensions
The MSL-824MW, a white source color device, Units : mm
is made with advanced InGaN on SiC chip.
The package is mixing epoxy and phosphor
within white plastic.
Applications
l LCD backlighting
l Symbol backlighting
l Front panel indicator
l High performance
l Excellent chip to chip consistency
l Uniform radiation pattern
A C
Notes :
1. All dimensions are in millimeters.
2. Tolerance is ± 0.1 mm unless otherwise noted.
3. Lead plating is minimum 80 mirco inch of silver.
Power Dissipation P 100 mW
Continuous Forward Current
Reverse Current (VR=5V) I
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Unity Opto Technology Co., Ltd.
Parameter Symbol
I
F
R
T
opr
T
stg
E
ot
@ TA=25oC
Unit
25 μA
100 μA
-20oC to +85oC
-40oC to +100oC
1000 V
03/29/2002

Optical-Electrical Characteristics
Parameter Test Conditions Symbol Min . Typ . Max . Unit .
Luminous Intensity
Forward Voltage
Reverse Current
Chromaticity x/y 0.33/0.33
Viewing Angle
IF=20mA
IF=20mA
VR=5V
IF=20mA
IF=20mA
2θ
I
V
V
F
I
R
1/2
- 3.5 4.1 V
- - 100
- 110 - deg.
Typical Optical-Electrical Characteristic Curves
@ TA=25
- mcd
µA
o
C
1
0.5
0
Relative power distribution
380 440 500 560 620 680
Wavelength (nm)
FIG.1 RELATIVE LUMINOUS
30
25
(mA)
F
20
15
10
5
0
Forward Current I
0 10 20 30 40 50 60 70 80 90 10
Ambient Temperature (
FIG.3 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
10
30
25
(mA)
F
20
15
10
5
0
Forward Current I
0 1 2 3 4
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
1
0.8
=20mA
F
0.6
0.4
0.2
0
0
o
C)
Normalized at I
Relative Luminous Intensity
0 5 10 15 20 25
Forward Current IF (mA)
FIG.4 RELATIVE LUMINOUS
INTENSITY
0o 10o 20
o
30°
Unity Opto Technology Co., Ltd.
1
0.1
Relative Luminous Intensity
0 20 30 50 70 90
Ambient Temperature (
o
C)
FIG.5 RELATIVELUMINOUS INTENSITY VS.
AMBIENT TEMPERATURE
1.0
0.9
0.8
Relative Luminous Intensity
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 RADIATION DIAGRAM
40°
50°
60°
70°
80°
90°