Datasheet MSK4301HU, MSK4301HD, MSK4301ES, MSK4301U, MSK4301HS Datasheet (MSK)

ISO 9001 CERTIFIED BY DSCC

29 AMP, 75V, 3 PHASE MOSFET

BRIDGE WITH INTELLIGENT

4301

M.S.KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088 [phone]

INTEGRATED GATE DRIVE

FEATURES:

75 Volt Motor Supply Voltage

29 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge

100% Duty Cycle High Side Conduction Capable

Suitable for PWM Applications from DC to 100KHz

Shoot-Through/Cross Conduction Protection

Undervoltage Lockout Protection

Programmable Dead-Time Control

Low Active Enable for Bridge Shutdown Control

Isolated Package Design for High Voltage Isolation Plus Good Thermal Transfer

Available with Three Lead Bend Options

MIL-PRF-38534 QUALIFIED

DESCRIPTION:

The MSK 4301 is a 3 phase MOSFET bridge plus drivers in a convenient isolated hermetic package. The hybrid is

capable of 29 amps of output current and 75 volts of DC bus voltage. It has a full line of protection features, including

undervoltage lockout protection of the bias voltage, cross conduction control and a user programmable dead-time control for

shoot-through elimination. In addition, the bridge may be shut down by using the Enable control. The MSK 4301 provides

good thermal conductivity for the MOSFETs due to the electrically isolated package design that allows direct heat sinking

of the device without insulators.

EQUIVALENT SCHEMATIC

TYPICAL APPLICATIONS

3 Phase Brushless DC

Servo Control

Fin Actuator Control

Gimbal Control

3 Phase AC

Induction Motor Control

HVAC Blower Control

PIN-OUT INFORMATION

BH

1

BL

2

AL

3

AH

4

SWR

5

VBIAS

6

EN

7

CL

8

CH

9

GND

10

1

20

19

18

17

16

15

14

13

12

11

AØ

AØ

V+

V+

BØ

BØ

CØ

CØ

RSENSE

RSENSE

Rev. D 4/01

ABSOLUTE MAXIMUM RATINGS

V+

High Voltage Supply

VBIAS

Bias Supply

VIND

Logic Input Voltages

IOUT

Continuous Output Current

IPK

Peak Output Current

○○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○

○○○○

-0.3V to VBIAS +0.3V

○○○○○○○○○○○

○○○○○○○○○○○○○○○

ELECTRICAL SPECIFICATIONS

75V

16V

29A

41A

θJC

Thermal Resistance

TST

Storage Temperature Range

TLD

Lead Temperature Range

(10 Seconds)

TC

Case Operating Temperature

(4301H/E)

(4301)

TJ

Junction Temperature

○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○○

MMS

○○○○○○○○○○○○○○

-65°C to +150°C

○○○

○○○○○○○○○○

+300°C

-55°C to +125°C

-40°C to +85°C

○○○○○○○○○○○○

+150°C

1°C/W

Parameter

CONTROL SECTION

VBIAS Quiescent Current

VBIAS Operating Current

Undervoltage Threshold (Falling)

Undervoltage Threshold (Rising)

Low Level Input Voltage

High Level Input Voltage

Low Level Input Current

High Level Input Current

OUTPUT BRIDGE

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Drain-Source On Resistance (Each FET)

Drain-Source On Resistance

(Each FET, For Thermal Calculations Only)

SWITCHING CHARACTERISTICS

Rise Time

Fall Time

Turn-On Prop Delay (Lower)

Turn-Off Prop Delay (Lower)

Turn-On Prop Delay (Upper)

Turn-Off Prop Delay (Upper)

Dead Time

Dead Time

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward Voltage

Reverse Recovery Time

1

1

1

1

1

1

1

1

1

f=20KHz, 50% Duty Cycle

1

1

Test Conditions

All Inputs Off

VIN=0V

VIN=5V

ID=25µA, All Inputs Off

VDS=70V

ID=29A

V+=28V, RL=1Ω

ID=29A

SWR Resistor=∞

SWR Resistor=∞

SWR Resistor=∞
SWR Resistor=∞

SWR =∞

SWR=12K

ISD=29A

ISD=29A, di/dt=100A/µS

GroupA 4

Subgroup

1,2,3

1,2,3

1

1

-

-

-

-

-

-

1

-

-

-

4

4

4

4

4

4

-

-

MSK4301H/E

60

-1

70

Typ.

2.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

20

6.6

7.1

100

120

81

0.5

0.5

5.0

1.0

1.05

120

Min.

5.75

6.2

2.7

3.0

0.3

3 2

Max.

8

25

7.5

8.0

0.8

-

-

-

-

-

-

5

5

-

135

+1

-

25

0.020

0.013

-

-

2

8

8

2

7.0

1.2

1.30

-

MSK4301

Min.

-

-

5.75

6.2

-

2.7

60

-1

70

-

-

--

-

-

-

-

-

-

3.0

0.3

-

-

Typ.

2.5

20

6.6

7.1

-

-

100

-

-

-

-

-

120

81

0.5

5

5

0.5

5.0

1.0

1.05

120

Max.

8

25

7.5

8.0

0.8

-

135

+1

-

25

0.020

0.013

-

-

3

10

10

3

7.0

1.2

1.30

-

Units

mAmp

mAmp

Volts

Volts

Volts

Volts

µAmp

µAmp

V

µAmp

Ω

Ω

nSec

nSec

µSec

µSec

µSec

µSec

µSec

µSec

Volts

nSec

NOTES:

1 Guaranteed by design but not tested. Typical parameters are representative of actual device

performance but are for reference only.

2 Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.

3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.

4 Subgroups 5 and 6 testing available upon request.

5 Subgroup 1, 4 T

2, 5 T

3, 6 T

A = TC = +25°C

A = TC = +125°C

A = TC = -55°C

2

Rev. D 4/01

APPLICATION NOTES

MSK 4301 PIN DESCRIPTIONS

AL,BL,CL - Are the lowside logic level digital inputs. These

three inputs control the three lowside bridge transistors. If the

highside inputs are low, then the lowside inputs will control

both the lowside and the highside of the bridge, with deadtime

set by the SWR resistor. EN will override these inputs, forcing

all outputs low. These inputs can be driven by logic up to 15V

(less than VBIAS). An internal pullup to VBIAS will hold each

input high if the pins are not driven.

AH,BH,CH - Are the highside logic level digital inputs. These

three inputs control the three highside bridge transistors. Un-

less the deadtime is disabled by connecting SWR to ground,

the lowside input of each phase will override the corresponding

highside input. If SWR is the lowside input of each phase will

override the corresponding highside input. In this condition,

tied to ground, deadtime is disabled and the outputs follow the

inputs. In this condition, shoot-through must be avoided exter-

nally. EN will override all inputs, forcing outputs low.

VBIAS - Is the positive supply for the gate drive. This pin should

be decoupled to ground with at least a 22µF capacitor in parallel

with a 0.1µF ceramic capcitor.

BUS VOLTAGE FILTER CAPACITORS

The size and placement of the capacitors for the main voltage

bus for the motor will have an effect on the noise filtered through-

out the rest of the system. Series RLC tuned circuit is being

created by the inductance of the wire (about 30nH per inch),

the filter capacitance, and all of the resistances (wire resistance

and the capacitor ESR) of the overall power circuit. Voltage

spikes from the back EMF if the motor ride on top of the bus

voltage. All of this must be taken into account when laying out

the system. A first capacitor of high quality and low ESR should

be placed as close to the hybrid circuit as possible. Along with

that, a capacitor of 5x to 10x the first value should be added

(and that second capacitor should have some ESR) and/or a

resistor should be added to help with the damping of the volt-

age spikes. Be careful of the ripple current in all the capacitors.

Excessive ripple current, beyond what the capacitor is rated

for, will destroy the capacitor.

GROUND - Is the return for the VBIAS supply. This pin should

be connected to the return of the lowside MOSFETs or the

bottom of the sense resistor at the bottom of the bridge. The

gate drive current must return through this pin, so trace lengths

should be kept to a minimum. All grounds should be returned

to the bottom of the bridge or sense resistor in a star fashion.

This will eliminate ground loops.

SWR - Is the pin for controlling the deadtime between the top

and bottom transistors of the bridge. By connecting a pullup

resistor between this pin and VBIAS, various deadtimes can be

obtained. There is and internal 100KΩ pullup resistor connected

internally. By adding additional resistors in externally, reduced

deadtimes can be achieved. By connecting this pin directly to

ground, all deadtime is eliminated. However, care must be taken

to assure that deadtime is being generated by the logic circuitry

driving the inputs. Shoot-through can occur (both the top and

bottom transistors on at the same time for a given phase, caus-

ing a short on the V+ supply to ground) destroying the bridge.

V+ - Is the power connection for the top of the output bridge.

These pins must be bypassed by a capacitor to ground of a least

10µF per amp preferrably 100µF per amp of output current mini

mum, high quality high frequency bypass capacitance to help

suppress switching noise. Connect both pins for proper current

sharing.

A

Ø, BØ, CØ - Are the output pins for the three phases of power

bridge. Connect both pins for proper current sharing.

BIAS SUPPLY BYPASS CAPACITORS

It is recommended that at least 22µF of capacitance for bypass-

ing the VBIAS voltage that supplies the drive circuitry for the

MSK 4301, along with 0.1µF for helping the high frequency

current pulses needed by the gate driver. If an extremely long

risetime is exhibited by the turn on of the FETs, the extra high

frequency capacitance will help.

GENERAL LAYOUT

Good high frequency PC layout techniques are a must. Traces

wide enough for the current delivered, and placement of the big

capacitors close to the MSK 4301 are very important. The path

for the RSENSE connection through any sense resistor back to

the GND pins must be as short as possible. This path is the

gate drive current path for all the FETs on the lower half of each

phase. A short, low inductance path will aid in the switching

time of those FETs.

IN

EN - Is the enabling input for the bridge. This digital input,

when pulled low, will enable the bridge, following the inputs

from AL, BL, CL and AH, BH, CH inputs. When pulled high, it

will override all other inputs and disable the bridge. It is inter-

nally pulled high to VBIAS, and can be driven by logic levels up

to VBIAS.

RSENSE - Are the connections to the bottom of the bridge. All

power flowing through the bridge will flow through this point,

and can be sensed by connecting a sense resistor from here to

ground. The sense resistor will develop a voltage proportional

to the current flowing. Size the value and power rating of the

sense resistor according to the voltage necessary. 3 volts is

the maximum voltage between this point and ground, or dam-

age to the hybrid will result. Connect both pins for proper cur-

rent sharing.

LOW POWER STARTUP

When starting up the circuit utilizing the MSK 4301 for the first

time, it is very important to keep certain things in mind. Be-

cause of the small size of the bridge, there is no internal short

circuit protection and a short circuit will destroy the bridge.

Any required short circuit protection must be built outside the

bridge. Current and voltage limit the power supply feeding the

V+ pins to the bridge, and monitor the current for any signs of

short circuiting, or shoot-through currents. If there are large

current spikes at the beginning of each switching cycle, there

may be shoot through. Try raising the resistor value of the

SWR. This will lengthen the deadtime and stop shoot-through.

3

Rev. D 4/01

TYPICAL APPLICATION SCHEMATIC

TYPICAL PERFORMANCE CURVES

4

Rev. D 4/01

MECHANICAL SPECIFICATIONS

ESD Triangle Indicates Pin 1.

NOTE: ALL DIMENSIONS ARE ±.010 INCHES UNLESS OTHERWISE LABELED.

MSK4301 H U

The above example is a Military grade hybrid with leads bent up.

ORDERING INFORMATION

LEAD CONFIGURATIONS

S= STRAIGHT; U= BENT UP; D= BENT DOWN

SCREENING

BLANK= INDUSTRIAL; E = EXTENDED RELIABILITY;

H = CLASS H

GENERAL PART NUMBER

M.S. Kennedy Corp.

4707 Dey Road, Liverpool, New York 13088

Phone [phone]

FAX [phone]

www.mskennedy.com

The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make

changes to its products or specifications without notice, however, and assumes no liability for the use of its products.

Please visit our website for the most recent revision of this datasheet.

5

Rev. D 4/01