Page 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSD6150/D
3 Anode
Cathode 1
2 Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Peak Forward Recurrent Current I
Peak Forward Surge Current
(Pulse Width = 10 µsec)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Breakdown Voltage
(I
= 100 µAdc)
(BR)
Reverse Current
(VR = 50 Vdc)
Forward Voltage
(IF = 10 mAdc)
Capacitance
(VR = 0)
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, T
R
F
I
FM(surge)
(1)
P
D
(1)
TJ, T
stg
= 25°C unless otherwise noted) (EACH DIODE)
A
70 Vdc
200 mAdc
500 mAdc
625
5.0
–55 to +135 °C
mW
mW/°C
V
(BR)
I
R
V
F
C — 5.0 8.0 pF
t
rr
= –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.
stg
70 — — Vdc
— — 0.1 µAdc
— 0.80 1.0 Vdc
— — 100 ns
1
2
3
CASE 29–04, STYLE 4
TO–92 (TO–226AA)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
Page 2
MSD6150
TYPICAL CHARACTERISTICS
Curves Applicable to Each Cathode
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
TA = 85°C
TA = –40°C
TA = 25°C
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
A)
µ
, REVERSE CURRENT (
R
0.01
I
0.001
10
1.0
0.1
0
10 20 30 40
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward V oltage Figure 2. Leakage Current
1.75
1.5
50
, DIODE CAPACITANCE (pF)
D
C
1.25
1.0
0.75
0
2468
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 3
SEATING
PLANE
MSD6150
P ACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
B
R
P
L
F
K
D
XX
G
J
H
V
1
C
N
SECTION X–X
N
CASE 029–04
(TO–226AA)
ISSUE AD
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
MILLIMETERSINCHES
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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MSD6150
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MSD6150/D
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