Datasheet msd42swt1g Datasheet

Page 1
MSD42SWT1G
NPN Silicon General Purpose High Voltage Transistor
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (T
Rating
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current -- Continuous I
=25C)
A
Symbol Value Unit
(BR)CBO
(BR)CEO
(BR)EBO
C
300 Vdc
300 Vdc
6.0 Vdc
150 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
Junction Temperature T
Storage Temperature Range T
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
D
J
stg
150 mW
150 C
--55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
=1.0mAdc,IB=0)
C
Collector-Base Breakdown Voltage
(I
= 100 mAdc, IE=0)
C
Emitter-Base Breakdown Voltage
(I
= 100 mAdc, IE=0)
E
Collector-Base Cutoff Current
Emitter--Base Cutoff Current
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage
1. Device mountedon a FR-4 glass epoxy printed circuit boardusing the minimum
2. Pulse T est: Pulse Width 300 ms, D.C. 2%.
= 300 Vdc, IE=0)
(V
CB
(V
=6.0Vdc,IB=0)
EB
(V
=10Vdc,IC=1.0mAdc)
CE
=10Vdc,IC=30mAdc)
(V
CE
(Note 2) (I I
=2.0mAdc)
B
recommended footprint.
= 200 mAdc,
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat )
300 -- Vdc
300 -- Vdc
6.0 -- Vdc
-- 0.1 mA
-- 0.1 mA
--
2540200
--
-- 0.5 Vdc
1
BASE
1
2
SC-- 70 (SOT--323)
CASE 419
STYLE 3
2
EMITTER
3
MARKING DIAGRAM
D4 M G
G
1
D4 = Device Code M = Date Code* G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MSD42SWT1G SC- -70/SOT- -323
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
3000/T ape & Reel
†
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 2
1 Publication Order Number:
MSD42SWT1/D
Page 2
0.05 (0.002)
a
D
e1
3
H
E
12
e
A1
MSD42SWT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419 --04
ISSUE N
E
b
A
A2
L
SOLDERING FOOTPRINT*
0.65
0.025
NOTES:
1. DIM ENSIO NING AND TOLER ANCIN G PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIMAMIN NOM MAX MIN
A1 0.00 0.05 0.10 0.000 A2 0.70 REF
b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047
e1
L
H
E
STYLE 3:
c
PIN 1. BASE
MILLIMETERS
0.80 0.90 1.00 0.032
0.65 BSC
0.38
0.20 0.56 0.008 0.022
2.00 2.10 2.40 0.079 0.083 0.095
2. EMITTER
3. COLLE CTOR
0.65
0.025
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.028 REF
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
0.026 BSC
0.015
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MSD425WT1/D
2
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