Datasheet msd1819a-rt1-d Datasheet

Page 1

MSD1819A--RT1

General Purpose Amplifier Transistor

NPN Silicon Surface Mount

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

Features

 High h  Low V

, 210 -- 460

CE(sat)

,<0.5V

 Moisture Sensitivity Level 1  ESD Protection: Human Body Model > 4000 V

Machine Model > 400 V

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Rating

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Collector Current -- Continuous I

Collector Current -- Peak I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Power Dissipation (Note 1) P

Junction Temperature T

Storage Temperature Range T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

=25C)

Symbol Value Unit

(BR)CBO

(BR)CEO

(BR)EBO

C(P)

stg

60 Vdc

50 Vdc

7.0 Vdc

100 mAdc

200 mAdc

150 mW

150 C

-- 55 to +150 C

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COLLECTOR

BASE

SC--70 (SOT --323)

CASE 419

STYLE 3

EMITTER

MARKING DIAGRAM

ZR M G

ZR = Device Code M = Date Code* G = Pb--Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

MSD1819A--RT1G SC--70/

SOT--323 (Pb--Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000/Tape & Reel

†

 Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 7

1 Publication Order Number:

MSD1819A--RT1/D

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MSD1819A--RT1

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Max Unit

Collector-Emitter Breakdown Voltage (IC=2.0mAdc,IB=0) V

Collector-Base Breakdown Voltage (IC=10mAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=10mAdc, IE=0)

Collector-Base Cutoff Current (VCB=20Vdc,IE=0) I

Collector-Emitter Cutoff Current (VCE=10Vdc,IB=0) I

DC Current Gain (Note 2)

Collector-Emitter Saturation Voltage (Note 2)

2. Pulse Test: Pulse Width  300 ms, D.C.  2%.

=10Vdc,IC=2.0mAdc)

=2.0Vdc,IC= 100 mAdc)

= 100 mAdc, IB=10mAdc)

(BR)CEO

(BR)CBO

(BR)EBO

CBO

CEO

FE1

FE2

CE(sat)

50 -- Vdc

60 -- Vdc

7.0 -- Vdc

-- 0.1

210

340

-- 0.5 Vdc

250

200

150

100

, POWER DISSIPATION (mW)

450

400

350

300

250

200

150

, DC CURRENT GAIN

100

= 833C/W

TA, AMBIENT TEMPERATURE (C) IC, COLLECTOR CURRENT (A)

Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage

150C(10V)

150C(2V)

25C(10V)

25C(2V)

-- 5 5 C(10V)

-- 5 5 C(2V)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain vs. Collector

Current

150100500-- 5 0

10.10.010.0010.0001

0.30

0.25

0.20

0.15

0.10

, COLLECTOR--EMITTER

SATURATION VOLTAGE (V)

0.05

CE(sat)

0.95

0.85

0.75

0.65

0.55

TION VOLTAGE (V)

0.45

, BASE --EMITTER SATURA-

0.35

BE(sat)

0.25

IC/IB=10

150C

25C

-- 5 5 C

vs. Collector Current

IC/IB=10

-- 5 5 C

25C

150C

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

10.10.010.0010.0001

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MSD1819A--RT1

, BASE--EMITTER TURN ON VOLTAGE (V)

BE(on)

, INPUT CAPACITANCE (pF)

ibo

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

-- 5 5 C

25C

150C

IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)

Figure 5. Base Emitter Turn--On Voltage vs.

Collector Current

8 7

(pF)

ibo

Veb, EMITTER BASE VOLTAGE (V)

Figure 7. Input Capacitance

1.2

1.0

0.8

0.6

0.4

0.2

, COLLECTOR--EMITTER VOLTAGE (V)

10.10.010.0010.0001

500 mA

1mA

10 mA

50 mA

TA=25C

IC= 100 mA

0.010.0010.00010.000010.000001

Figure 6. Collector Saturation Region

6.0

5.5

5.0

4.5

4.0

(pF)

3.5

3.0

2.5

2.0

, OUTPUT CAPACITANCE (pF)

obo

1.5

6543210

1.0

obo

Vcb, COLLECTOR BASE VOLTAGE (V)

40302520151050

Figure 8. Output Capacitance

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0.05 (0.002)

MSD1819A--RT1

PACKAGE DIMENSIONS

SC--70 (SOT--323)

CASE 419--04

ISSUE N

SOLDERING FOOTPRINT*

0.65

0.025

NOTES:

1. DIMENS IONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.70 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 3:

PIN 1. BASE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.38

0.20 0.56

2.00 2.10 2.40 0.079 0.083 0.095

2. EMITTER

3. COLLECTOR

0.65

0.025

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.015

0.008 0.022

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1



inches



*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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MSD1819A--RT1/D