Datasheet MSC2383257A-70BS16, MSC2383257A-60BS16, MSC2383257A-70DS16, MSC2383257A-60DS16 Datasheet (OKI)

¡ Semiconductor

MSC2383257A-xxBS16/DS16

¡ Semiconductor

MSC2383257A-xxBS16/DS16

8,388,608-Word ¥ 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO

1

DESCRIPTION

The Oki MSC2383257A-xxBS16/DS16 is a fully decoded 8,388,608-word ¥ 32-bit CMOS dynamic
random access memory composed of sixteen 16-Mb DRAMs (4M ¥ 4) in SOJ. The mounting of
sixteen DRAMs together with decoupling capacitors on a 72-pin glass epoxy SIMM Package
supports any application where high density and large capacity of storage memory are required.

FEATURES

• 8,388,608-word ¥ 32-bit organization

• 72-pin SIMM
MSC2383257A-xxBS16 : Gold tab
MSC2383257A-xxDS16 : Solder tab

• Single 5 V supply ±10% tolerance

• Input : TTL compatible

• Output : TTL compatible, 3-state, nonlatch

• Refresh : 2048 cycles/32 ms

• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability

• Multi-bit test mode capability

• Fast Page Mode with EDO capability

PRODUCT FAMILY

Family

MSC2383257A-60BS16/DS16 5500 mW

MSC2383257A-70BS16/DS16 5060 mW

Access Time (Max.)

t

RAC

60 ns 30 ns 15 ns 110 ns

70 ns 35 ns 20 ns 130 ns

t

AA

t

CAC

Cycle Time

(Min.)

Operating (Max.)

Power Dissipation

Standby (Max.)

88 mW

117

MSC2383257A-xxBS16/DS16 ¡ Semiconductor

PIN CONFIGURATION

MSC2383257A-xxBS16/DS16

* 1

107.95 ±0.2

3.38 ±0.2

3.18φ

25.4 ±0.2

Typ.

Typ.

10.16

6.35

2.03 Typ.

Pin No.

Pin Name

11631

2 173247

3 183348

4 193449

5 203550

6 213651

7 223752

8 233853

9 243954

10 25 40 55

11 26 41 56

12 27 42 57

13 28 43 58

14 29 44 59

15 30 45 60

1

6.35 Typ.

*1 The common size difference of the board width 12.5 mm of its height is

V

SS

1.27 ±0.1

specified as ±0.2. The value above 12.5 mm is specified as ±0.5.

Pin No.

Pin Name

A4 A8 NC

DQ0 A5 A9 WE

DQ16 A6 RAS3 NC

DQ1 A10 RAS2 DQ8

DQ17 DQ4 NC DQ24

DQ2 DQ20 NC DQ9

DQ18 DQ5 NC DQ25

DQ3 DQ21 NC DQ10

DQ19 DQ6 V

V

CC

DQ22 CAS0 DQ11
NC DQ7 CAS2 DQ27
A0 DQ23 CAS3 DQ12
A1 A7 CAS1 DQ28
A2 NC RAS0 V

A3 V

CC

101.19 Typ.

R1.57

6.35

Pin No.

95.25

1.04 Typ.

Pin Name

Pin No.

Pin Name

46

SS

RAS1 DQ29

DQ26

72

CC

3.7 Min.

1.27

Pin No.

(Unit : mm)

9.30 Max.

+0.1
–0.08

Pin Name

61

62

63

64

65

66

67

68

69

70

71

72

6.2 Min.

DQ13

DQ30

DQ14

DQ31

DQ15

NC

PD1

PD2

PD3

PD4

NC

V

SS

Presence Detect Pins

Pin No.

67 PD1

68 PD2

118

Pin Name

MSC2383257A

-60BS16/DS16

NC

V

SS

NC69 PD3

MSC2383257A

-70BS16/DS16

NC

V

SS

V

SS

NCNC70 PD4

¡ Semiconductor

BLOCK DIAGRAM

MSC2383257A-xxBS16/DS16

A0 - A10

RAS0

CAS0

WE

A0 - A10

RAS
CAS
WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

V

V

V

DQ
DQ
DQ
DQ

OE

DQ
DQ
DQ
DQ

OE

DQ
DQ
DQ
DQ

OE

RAS2

1

RAS3

CAS2

DQ0
DQ1
DQ2
DQ3

SS

DQ4
DQ5
DQ6
DQ7

SS

DQ8
DQ9
DQ10
DQ11

SS

DQ
DQ
DQ
DQ

OE

V

DQ
DQ
DQ
DQ

OE

V

DQ
DQ
DQ
DQ

OE

V

SS

SS

SS

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

V

V

V

DQ
DQ
DQ
DQ

OE

DQ
DQ
DQ
DQ

OE

DQ
DQ
DQ
DQ

OE

DQ16
DQ17
DQ18
DQ19

SS

DQ20
DQ21
DQ22
DQ23

SS

DQ24
DQ25
DQ26
DQ27

SS

DQ
DQ
DQ
DQ

OE

V

DQ
DQ
DQ
DQ

OE

V

DQ
DQ
DQ
DQ

OE

V

SS

SS

SS

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS

WE

V

CC

RAS1

CAS1

V

CC

C1 C16

V

SS

A0 - A10

RAS
CAS
WE

V

CC

V

DQ
DQ
DQ
DQ

OE

DQ

V

DQ
DQ
DQ

OE

DQ28
DQ29
DQ30
DQ31

SS

DQ
DQ
DQ
DQ

OE

V

SS

A0 - A10

RAS
CAS

WE

V

CC

DQ12
DQ13
DQ14
DQ15

SS

DQ
DQ
DQ
DQ

OE

V

SS

A0 - A10

RAS
CAS

WE

V

CC

A0 - A10

RAS
CAS
WE

V

CC

CAS3

119

MSC2383257A-xxBS16/DS16 ¡ Semiconductor

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Voltage on Any Pin Relative to V

Voltage V

Supply Relative to V

CC

Short Circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

SS

SS

Symbol

VIN, V

OUT

V

CC

I

OS

P

D

T

opr

T

stg

Rating Unit

–1.0 to 7.0 V

–1.0 to 7.0 V

50 mA

16 W

0 to 70 °C

–40 to 125 °C

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.

Recommended Operating Conditions

(Ta = 0°C to 70°C)

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

V

CC

V

SS

V

IH

V

IL

Min.

Typ.

4.5 5.0 5.5 V

000V

2.4 — 6.5 V

–1.0 — 0.8 V

Max.

Unit

Capacitance

Parameter

Symbol

C

IN1

C

IN2

C

IN3

C

IN4

C

DQ

Typ.

— 109

Note : Capacitance measured with Boonton Meter.

Max.

(Ta = 25°C, f = 1 MHz)

Unit

pFInput Capacitance (A0 - A10)
pFInput Capacitance (WE) — 125
pFInput Capacitance (RAS0 - RAS3)—35
pFInput Capacitance (CAS0 - CAS3)—35

pFI/O Capacitance (DQ0 - DQ31) — 26

120

¡ Semiconductor

MSC2383257A-xxBS16/DS16

DC Characteristics

Parameter

Input Leakage Current

Output Leakage Current

Output High Voltage

Output Low Voltage

Average Power

Supply Current

(Operating)

Power Supply

Current (Standby)

Average Power

Supply Current
(RAS-only Refresh)

Average Power

Supply Current
(CAS before RAS Refresh)

Average Power

Supply Current

(Fast Page Mode)

Symbol

I

LI

I

LO

V

OH

V

OL

I

CC1

I

CC2

I

CC3

I

CC6

I

CC7

Condition

0 V £ VI £ 6.5 V;

All other pins not

under test = 0 V

disable

D

OUT

0 V £ V

I

OH

I

OL

£ 5.5 V

O

= –5.0 mA

= 4.2 mA

RAS, CAS cycling,

= Min.

t

RC

RAS, CAS = V

IH

RAS, CAS

≥ V

–0.2 V

CC

RAS cycling,

= Min.

,

IH

CAS = V

t

RC

RAS cycling,
CAS before RAS,

= Min.

t

RC

RAS = V

,

IL

CAS cycling,

= Min.

t

HPC

MSC2383257A

-60BS16/DS16

Min.

–160

–20

2.4

0

—

—

—

—

—

—

Max.

160

20

V

CC

0.4

1000

32

16

1000

1000

1160

(VCC = 5 V ±10%, Ta = 0°C to 70°C)

MSC2383257A

-70BS16/DS16

Min.

–160

–20

2.4

0

—

—

—

—

—

—

Max.

160

20

V

CC

0.4

920

32

16

920

920

1080

Unit

1

µA

µA

V

V

mA

mA

mA

mA

mA

mA

Note

1, 2

1

1

1, 2

1, 2

1, 3

Notes: 1. ICC Max. is specified as ICC for output open condition.

2. Address can be changed once or less while RAS=VIL.

3. Address can be changed once or less while CAS=VIH.

121

MSC2383257A-xxBS16/DS16 ¡ Semiconductor

AC Characteristics (1/2)

Parameter

Random Read or Write Cycle Time

Fast Page Mode Cycle Time t
Access Time from RAS t
Access Time from CAS t

Access Time from Column Address t
Access Time from CAS Precharge t
Output Low Impedance Time from CAS t
Output Hold Time from CAS Low t

CAS to Data Output Buffer Turn-off Delay Time
RAS to Data Output Buffer Turn-off Delay Time
WE to Data Output Buffer Turn-off Delay Time

Transition Time t

Refresh Period t

RAS Precharge Time t
RAS Pulse Width t
RAS Pulse Width (Fast Page Mode) t
RAS Hold Time t
CAS Precharge Time t
CAS Pulse Width t
RAS Low to CAS High Delay Time t
CAS High to RAS Low Delay Time t
RAS Hold Time from CAS Precharge t
RAS to CAS Delay Time t
RAS to Column Address Delay Time t
RAS to Second CAS Delay Time t

Row Address Set-up Time t

Row Address Hold Time t

Column Address Set-up Time t

Column Address Hold Time t
Column Address Hold Time from RAS t
Column Address to RAS Lead Time t

Symbol

t

RC

HPC

RAC

CAC

AA

CPA

CLZ

DOH

t

CEZ

t

REZ

t

WEZ

T

REF

RP

RAS

RASP

RSH

CP

CAS

CSH

CRP

RHCP

RCD

RAD

RSCD

ASR

RAH

ASC

CAH

AR

RAL

(V

= 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3,10,11

CC

MSC2383257A

-60BS16/DS16
Min.

110

25

—

—

—

—

0

0

2

—

40

60

60

15

10

10

40

10

35

20

15

0

10

0

10

40

30

Max.

—

—

60

15

30

35

—

15

50

32

—

10k

100k

—

—

10k

—

—

—

45

30

—

—

—

—

—

—

MSC2383257A

-70BS16/DS16
Min.

130

30

—

—

—

—

0

0

2

—

50

70

70

20

10

10

45

10

40

20

15

0

10

0

15

45

35

Max.

—

—

70

20

35

40

—

20

50

32

—

10k

100k

—

—

10k

—

—

—

50

35

—

—

—

—

—

—

Unit

ns

ns

ns

ns

ns

ns

ns

ns5—5—

ns

ns 7, 8020015

ns 7020015

ns

ms

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns70 —60 —

ns

ns

ns

ns

ns

ns

Note

4, 5, 6

4, 5

4, 6

4

4

7, 8

3

5

6

122

¡ Semiconductor

MSC2383257A-xxBS16/DS16

AC Characteristics (2/2)

Parameter

Read Command Set-up Time

Read Command Hold Time
Read Command Hold Time referenced to RAS

Write Command Set-up Time

Write Command Hold Time
Write Command Hold Time from RAS

Write Command Pulse Width

Write Command Pulse Width (Output Disable)
Write Command to RAS Lead Time
Write Command to CAS Lead Time

Data-in Set-up Time

Data-in Hold Time
Data-in Hold Time from RAS

CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)ns
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)

Symbol

RCS

t

RCH

t

RRH

t

WCS

t

WCH

t

WCR

t

WP

t

WPE

t

RWL

t

CWL

t

DS

t

DH

t

DHR

t

RPC

t

CSR

t

CHR

t

WRP

t

WRH

t

WTS

t

WTH

(V

= 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3,10,11

CC

MSC2383257A

-60BS16/DS16

Min.

0

0

0

0

10

45

10

15

15

0

15

40

10

10

20

Max.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

MSC2383257A

-70BS16/DS16

Min.

0

0

0

0

15

50

10

20

20

0

15

45

10

10

20

Max.

—t

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Unit

ns

ns

ns

ns

ns

ns

ns

ns10 —5—

ns

ns

ns

ns

ns

ns

ns

ns10 —10 —

ns10 —10 —

ns10 —10 —

ns20 —20 —

Note

1

9

9

123

MSC2383257A-xxBS16/DS16 ¡ Semiconductor

Notes: 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight

initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.

2. The AC characteristics assume tT = 5 ns.

3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.

4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.

5. Operation within the t
t

(Max.) is specified as a reference point only. If t

RCD

t

(Max.) limit, access time is controlled by t

RCD

6. Operation within the t
t

(Max.) is specified as a reference point only. If t

RAD

t

(Max.) limit, access time is controlled by tAA.

RAD

7. t

CEZ

(Max.), t

(Max.) and t

REZ

(Max.) limit ensures that t

RCD

(Max.) limit ensures that t

RAD

(Max.) define the time at which the output achieves

WEZ

CAC

(Max.) can be met.

RAC

is greater than the specified

RCD

.

(Max.) can be met.

RAC

is greater than the specified

RAD

the open circuit condition and are not referenced to output voltage levels.

8. t

9. t

CEZ

RCH

and t

or t

must be satisfied for open circuit condition.

REZ

must be satisfied for a read cycle.

RRH

10. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.

This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is an 8-bit parallel test function. CA0, CA1
and CA10 are not used. In a read cycle, if all internal bits are equal, the DQ pin will
indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low
level. The test mode is cleared and the memory device returned to its normal
operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh
cycle.
The 4M ¥ 32 module can be tested as a 512K ¥ 32 module in this test mode.

124

11. In a test mode read cycle, the access time parameters are delayed by 5 ns. The test
mode parameters are obtained by adding 5 ns to the normal read cycle values.

See ADDENDUM I for AC Timing Waveforms