Datasheet MSC2383257A-70BS16, MSC2383257A-60BS16, MSC2383257A-70DS16, MSC2383257A-60DS16 Datasheet (OKI)
Page 1
¡ Semiconductor
MSC2383257A-xxBS16/DS16
¡ Semiconductor
MSC2383257A-xxBS16/DS16
8,388,608-Word ¥ 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
1
DESCRIPTION
The Oki MSC2383257A-xxBS16/DS16 is a fully decoded 8,388,608-word ¥ 32-bit CMOS dynamic
random access memory composed of sixteen 16-Mb DRAMs (4M ¥ 4) in SOJ. The mounting of
sixteen DRAMs together with decoupling capacitors on a 72-pin glass epoxy SIMM Package
supports any application where high density and large capacity of storage memory are required.
FEATURES
• 8,388,608-word ¥ 32-bit organization
• 72-pin SIMM
MSC2383257A-xxBS16 : Gold tab
MSC2383257A-xxDS16 : Solder tab
• Single 5 V supply ±10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 2048 cycles/32 ms
• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Fast Page Mode with EDO capability
PRODUCT FAMILY
Family
MSC2383257A-60BS16/DS16 5500 mW
MSC2383257A-70BS16/DS16 5060 mW
Access Time (Max.)
t
RAC
60 ns 30 ns 15 ns 110 ns
70 ns 35 ns 20 ns 130 ns
t
AA
t
CAC
Cycle Time
(Min.)
Operating (Max.)
Power Dissipation
Standby (Max.)
88 mW
117
Page 2
MSC2383257A-xxBS16/DS16 ¡ Semiconductor
PIN CONFIGURATION
MSC2383257A-xxBS16/DS16
* 1
107.95 ±0.2
3.38 ±0.2
3.18φ
25.4 ±0.2
Typ.
Typ.
10.16
6.35
2.03 Typ.
Pin No.
Pin Name
11631
2 173247
3 183348
4 193449
5 203550
6 213651
7 223752
8 233853
9 243954
10 25 40 55
11 26 41 56
12 27 42 57
13 28 43 58
14 29 44 59
15 30 45 60
1
6.35 Typ.
*1 The common size difference of the board width 12.5 mm of its height is
V
SS
1.27 ±0.1
specified as ±0.2. The value above 12.5 mm is specified as ±0.5.
Pin No.
Pin Name
A4 A8 NC
DQ0 A5 A9 WE
DQ16 A6 RAS3 NC
DQ1 A10 RAS2 DQ8
DQ17 DQ4 NC DQ24
DQ2 DQ20 NC DQ9
DQ18 DQ5 NC DQ25
DQ3 DQ21 NC DQ10
DQ19 DQ6 V
V
CC
DQ22 CAS0 DQ11
NC DQ7 CAS2 DQ27
A0 DQ23 CAS3 DQ12
A1 A7 CAS1 DQ28
A2 NC RAS0 V
A3 V
CC
101.19 Typ.
R1.57
6.35
Pin No.
95.25
1.04 Typ.
Pin Name
Pin No.
Pin Name
46
SS
RAS1 DQ29
DQ26
72
CC
3.7 Min.
1.27
Pin No.
(Unit : mm)
9.30 Max.
+0.1
–0.08
Pin Name
61
62
63
64
65
66
67
68
69
70
71
72
6.2 Min.
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Pin No.
67 PD1
68 PD2
118
Pin Name
MSC2383257A
-60BS16/DS16
NC
V
SS
NC69 PD3
MSC2383257A
-70BS16/DS16
NC
V
SS
V
SS
NCNC70 PD4
Page 3
¡ Semiconductor
BLOCK DIAGRAM
MSC2383257A-xxBS16/DS16
A0 - A10
RAS0
CAS0
WE
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
V
V
V
DQ
DQ
DQ
DQ
OE
DQ
DQ
DQ
DQ
OE
DQ
DQ
DQ
DQ
OE
RAS2
1
RAS3
CAS2
DQ0
DQ1
DQ2
DQ3
SS
DQ4
DQ5
DQ6
DQ7
SS
DQ8
DQ9
DQ10
DQ11
SS
DQ
DQ
DQ
DQ
OE
V
DQ
DQ
DQ
DQ
OE
V
DQ
DQ
DQ
DQ
OE
V
SS
SS
SS
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
V
V
V
DQ
DQ
DQ
DQ
OE
DQ
DQ
DQ
DQ
OE
DQ
DQ
DQ
DQ
OE
DQ16
DQ17
DQ18
DQ19
SS
DQ20
DQ21
DQ22
DQ23
SS
DQ24
DQ25
DQ26
DQ27
SS
DQ
DQ
DQ
DQ
OE
V
DQ
DQ
DQ
DQ
OE
V
DQ
DQ
DQ
DQ
OE
V
SS
SS
SS
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
RAS1
CAS1
V
CC
C1 C16
V
SS
A0 - A10
RAS
CAS
WE
V
CC
V
DQ
DQ
DQ
DQ
OE
DQ
V
DQ
DQ
DQ
OE
DQ28
DQ29
DQ30
DQ31
SS
DQ
DQ
DQ
DQ
OE
V
SS
A0 - A10
RAS
CAS
WE
V
CC
DQ12
DQ13
DQ14
DQ15
SS
DQ
DQ
DQ
DQ
OE
V
SS
A0 - A10
RAS
CAS
WE
V
CC
A0 - A10
RAS
CAS
WE
V
CC
CAS3
119
Page 4
MSC2383257A-xxBS16/DS16 ¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
Voltage V
Supply Relative to V
CC
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
SS
SS
Symbol
VIN, V
OUT
V
CC
I
OS
P
D
T
opr
T
stg
Rating Unit
–1.0 to 7.0 V
–1.0 to 7.0 V
50 mA
16 W
0 to 70 °C
–40 to 125 °C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
Typ.
4.5 5.0 5.5 V
000V
2.4 — 6.5 V
–1.0 — 0.8 V
Max.
Unit
Capacitance
Parameter
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Typ.
— 109
Note : Capacitance measured with Boonton Meter.
Max.
(Ta = 25°C, f = 1 MHz)
Unit
pFInput Capacitance (A0 - A10)
pFInput Capacitance (WE) — 125
pFInput Capacitance (RAS0 - RAS3)—35
pFInput Capacitance (CAS0 - CAS3)—35
pFI/O Capacitance (DQ0 - DQ31) — 26
120
Page 5
¡ Semiconductor
MSC2383257A-xxBS16/DS16
DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Average Power
Supply Current
(CAS before RAS Refresh)
Average Power
Supply Current
(Fast Page Mode)
Symbol
I
LI
I
LO
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC6
I
CC7
Condition
0 V £ VI £ 6.5 V;
All other pins not
under test = 0 V
disable
D
OUT
0 V £ V
I
OH
I
OL
£ 5.5 V
O
= –5.0 mA
= 4.2 mA
RAS, CAS cycling,
= Min.
t
RC
RAS, CAS = V
IH
RAS, CAS
≥ V
–0.2 V
CC
RAS cycling,
= Min.
,
IH
CAS = V
t
RC
RAS cycling,
CAS before RAS,
= Min.
t
RC
RAS = V
,
IL
CAS cycling,
= Min.
t
HPC
MSC2383257A
-60BS16/DS16
Min.
–160
–20
2.4
0
—
—
—
—
—
—
Max.
160
20
V
CC
0.4
1000
32
16
1000
1000
1160
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
MSC2383257A
-70BS16/DS16
Min.
–160
–20
2.4
0
—
—
—
—
—
—
Max.
160
20
V
CC
0.4
920
32
16
920
920
1080
Unit
1
µA
µA
V
V
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1
1, 2
1, 2
1, 3
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. Address can be changed once or less while RAS=VIL.
3. Address can be changed once or less while CAS=VIH.
121
Page 6
MSC2383257A-xxBS16/DS16 ¡ Semiconductor
AC Characteristics (1/2)
Parameter
Random Read or Write Cycle Time
Fast Page Mode Cycle Time t
Access Time from RAS t
Access Time from CAS t
Access Time from Column Address t
Access Time from CAS Precharge t
Output Low Impedance Time from CAS t
Output Hold Time from CAS Low t
CAS to Data Output Buffer Turn-off Delay Time
RAS to Data Output Buffer Turn-off Delay Time
WE to Data Output Buffer Turn-off Delay Time
Transition Time t
Refresh Period t
RAS Precharge Time t
RAS Pulse Width t
RAS Pulse Width (Fast Page Mode) t
RAS Hold Time t
CAS Precharge Time t
CAS Pulse Width t
RAS Low to CAS High Delay Time t
CAS High to RAS Low Delay Time t
RAS Hold Time from CAS Precharge t
RAS to CAS Delay Time t
RAS to Column Address Delay Time t
RAS to Second CAS Delay Time t
Row Address Set-up Time t
Row Address Hold Time t
Column Address Set-up Time t
Column Address Hold Time t
Column Address Hold Time from RAS t
Column Address to RAS Lead Time t
Symbol
t
RC
HPC
RAC
CAC
AA
CPA
CLZ
DOH
t
CEZ
t
REZ
t
WEZ
T
REF
RP
RAS
RASP
RSH
CP
CAS
CSH
CRP
RHCP
RCD
RAD
RSCD
ASR
RAH
ASC
CAH
AR
RAL
(V
= 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3,10,11
CC
MSC2383257A
-60BS16/DS16
Min.
110
25
—
—
—
—
0
0
2
—
40
60
60
15
10
10
40
10
35
20
15
0
10
0
10
40
30
Max.
—
—
60
15
30
35
—
15
50
32
—
10k
100k
—
—
10k
—
—
—
45
30
—
—
—
—
—
—
MSC2383257A
-70BS16/DS16
Min.
130
30
—
—
—
—
0
0
2
—
50
70
70
20
10
10
45
10
40
20
15
0
10
0
15
45
35
Max.
—
—
70
20
35
40
—
20
50
32
—
10k
100k
—
—
10k
—
—
—
50
35
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns5—5—
ns
ns 7, 8020015
ns 7020015
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns70 —60 —
ns
ns
ns
ns
ns
ns
Note
4, 5, 6
4, 5
4, 6
4
4
7, 8
3
5
6
122
Page 7
¡ Semiconductor
MSC2383257A-xxBS16/DS16
AC Characteristics (2/2)
Parameter
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
Write Command Set-up Time
Write Command Hold Time
Write Command Hold Time from RAS
Write Command Pulse Width
Write Command Pulse Width (Output Disable)
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Set-up Time
Data-in Hold Time
Data-in Hold Time from RAS
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)ns
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
Symbol
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WCR
t
WP
t
WPE
t
RWL
t
CWL
t
DS
t
DH
t
DHR
t
RPC
t
CSR
t
CHR
t
WRP
t
WRH
t
WTS
t
WTH
(V
= 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3,10,11
CC
MSC2383257A
-60BS16/DS16
Min.
0
0
0
0
10
45
10
15
15
0
15
40
10
10
20
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MSC2383257A
-70BS16/DS16
Min.
0
0
0
0
15
50
10
20
20
0
15
45
10
10
20
Max.
—t
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns10 —5—
ns
ns
ns
ns
ns
ns
ns
ns10 —10 —
ns10 —10 —
ns10 —10 —
ns20 —20 —
Note
1
9
9
123
Page 8
MSC2383257A-xxBS16/DS16 ¡ Semiconductor
Notes: 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times (tT) are measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t
t
(Max.) is specified as a reference point only. If t
RCD
t
(Max.) limit, access time is controlled by t
RCD
6. Operation within the t
t
(Max.) is specified as a reference point only. If t
RAD
t
(Max.) limit, access time is controlled by tAA.
RAD
7. t
CEZ
(Max.), t
(Max.) and t
REZ
(Max.) limit ensures that t
RCD
(Max.) limit ensures that t
RAD
(Max.) define the time at which the output achieves
WEZ
CAC
(Max.) can be met.
RAC
is greater than the specified
RCD
.
(Max.) can be met.
RAC
is greater than the specified
RAD
the open circuit condition and are not referenced to output voltage levels.
8. t
9. t
CEZ
RCH
and t
or t
must be satisfied for open circuit condition.
REZ
must be satisfied for a read cycle.
RRH
10. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is an 8-bit parallel test function. CA0, CA1
and CA10 are not used. In a read cycle, if all internal bits are equal, the DQ pin will
indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low
level. The test mode is cleared and the memory device returned to its normal
operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh
cycle.
The 4M ¥ 32 module can be tested as a 512K ¥ 32 module in this test mode.
124
11. In a test mode read cycle, the access time parameters are delayed by 5 ns. The test
mode parameters are obtained by adding 5 ns to the normal read cycle values.
See ADDENDUM I for AC Timing Waveforms
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