Datasheet MSC23436C-70DS10, MSC23436C-60BS10, MSC23436C-60DS10, MSC23436C-70BS10 Datasheet (OKI)

Semiconductor

MSC23436C-xxBS10/DS10

4,194,304-wo rd x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE

This vers i on: Apr. 7. 1999

DESCRIPTION

The MSC23436C-xxBS10/DS10 is a 4,194,304-word x 36-bit CMOS dynamic random access memory module
which is composed of ei ght 16Mb(4Mx 4) DRAMs in SO J packages and two 8Mb(4Mx2) DRAMs in S OJ packages
mounted with t en decoupl i ng capaci tor s. Thi s i s a 72-pin si ngle i n-l i ne m em ory m odul e. T hi s modul e supports any
applicat ion where high density and l ar ge c apac ity of stor age memory ar e r equired.

FEATURES

· 4,194,304-word x 36- bit organization

· 72-pin Single In-Li ne M emory Module
MSC23436C-xxBS10 : Gold tab
MSC23436C-xxDS10 : Solder tab

· Singl e 5V power supply, ±10% tolerance

· Input : TTL compatibl e

· Output : TTL compatible, 3-state

· Refresh : 2048cycles/32ms

· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability

· Fast page mode c apability

· Multi-bit t est mode capability

PRODUCT FAMILY

Access Time (Max. ) Power Dissipation (M ax.)

Family

t

RAC

t

AA

t

CAC

Cycle

Time

(Min.)

Operating Standby

MSC23436C-60BS10/DS10 60ns 30ns 15ns 110ns 5720mW
MSC23436C-70BS10/DS10 70ns 35ns 20ns 130ns 5225mW

55mW

Semiconductor MSC23436C

MODULE OUTLINE

1 72

R1.57

6.35

1.04Typ.

1.27±0.1

95.25

2.03Typ.

6.35Typ.

Typ.

6.35

Typ.

10.16

φ

3.18

25.4±0.2

101.19Typ.

107.95±0.2

*1

3.38Typ.

3.17Min.

5.28Max.

+0.1

-0.08

1.27

(Uni t : mm)

MSC23436C-xxBS10/DS10

*1 Tolerance over 14.5mm from bottom edge is ±0.5.

Semiconductor MSC23436C

PIN C ONFIGURATION

Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name

1VSS19 A10 37DQ1755DQ12
2 DQ0 20 DQ4 38DQ3556DQ30
3 DQ1821DQ2239 VSS57 DQ13
4 DQ1 22 DQ5 40 /CAS0 58 DQ31
5 DQ1923DQ2341/CAS259 V

CC

6 DQ2 24 DQ6 42 /CAS3 60 DQ32
7 DQ2025DQ2443/CAS161DQ14
8 DQ3 26 DQ7 44 /RAS0 62 DQ33
9 DQ2127DQ2545 NC 63DQ15

10 V

CC

28 A7 46 NC 64 DQ 34
11 NC 29 NC 47 /WE 65 DQ16
12 A0 30 V

CC

48 NC 66 NC
13 A1 31 A8 49 DQ9 67 PD1
14 A2 32 A9 50 DQ27 68 PD2
15 A3 33 NC 51 DQ 10 69 PD3
16 A4 34 /RAS2 52 DQ28 70 PD4
17 A5 35 DQ26 53 DQ11 71 NC
18 A6 36 DQ8 54 DQ29 72 V

SS

Presence Detect Pins

Pin No. Pin Name -60 -70

67 PD1 V

SS

V

SS

68 PD2 NC NC
69 PD3 NC V

SS

70 PD4 NC NC

Semiconductor MSC23436C

BLOCK DIAGRAM

/WE

/CAS0

/RAS0

A0-A10

/CAS1

DQ0

A0-A10DQDQDQDQ

/OE

V

CC

/RAS

/CAS

/WE

V

SS

DQ1

DQ2

DQ3

DQ8

A0-A10

DQ1

DQ2

/OE

V

CC

/RAS

/CAS1

/WE

V

SS

DQ17

/CAS2

V

CC

VSSC1-C10

A0-A10

DQ

DQ

DQDQ/OE

VCC/RAS

/CAS

/WE

V

SS

DQ4

DQ5

DQ6

DQ7

A0-A10DQDQDQDQ

/OE

V

CC

/RAS

/CAS

/WE

VSSDQ9

DQ10

DQ11

DQ12

A0-A10

DQ

DQ

DQDQ/OE

/RAS

/CAS

/WE

DQ13

DQ14

DQ15

DQ16

DQ18

A0-A10

DQ

DQDQDQ

/OE

/RAS

/CAS

/WE

DQ19

DQ20

DQ21

VCCVSSVCCV

SS

DQ22

A0-A10

DQ

DQ

DQDQ/OE

/RAS

/CAS

/WE

DQ23

DQ24

DQ25

VCCVSSDQ26

A0-A10

DQ1

DQ2

/OE

V

CC

/RAS

/CAS1

/WE

V

SS

DQ35

/CAS2

DQ27

A0-A10

DQ

DQDQDQ

/OE

/RAS

/CAS

/WE

DQ28

DQ29

DQ30

VCCV

SS

DQ31

A0-A10

DQ

DQ

DQDQ/OE

/RAS

/CAS

/WE

DQ32

DQ33

DQ34

VCCVSS/CAS2

/RAS2

/CAS3

Semiconductor MSC23436C

ELECTRICAL CHARAC TERISTICS

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Voltage on Any Pin Relative to V

SS

VIN, V

OUT

-0.5 to 7.0 V

Voltage on VCC Supply Relative t o V

SS

V

CC

-0.5 to 7.0 V

Short Circuit Out put Current I

OS

50 mA
Power Dissipation PD *10W
Operating Temperature T

OPR

0 to 70 °C

Storage Temperature T

STG

-40 to 125 °C

* Ta = 25° C

Recommended Operating Conditions

( Ta = 0°C t o 70°C )

Parameter Symbol Min. Typ. Max. Unit

V

CC

4.5 5.0 5.5 V

Power Supply Voltage

V

SS

000V

Input High Voltage V

IH

2.4 - VCC + 0.5 V

Input Low Voltage V

IL

-0.5 - 0.8 V

Capacitance

( V

CC

= 5V ± 10% , Ta = 25° C, f = 1 MHz )

Parameter Symbol Typ. Max. Unit

Input Capacit ance (A0 - A10) C

IN1

-70pF

Input Capacit ance (/WE) C

IN2

-80pF

Input Capacitance (/ RAS0, /RAS2) C

IN3

-43pF

Input Capacitance (/ CAS0 - / CAS3) C

IN4

-28pF

I/O Capacitance (DQ0 - DQ35) C

I/O

-16pF

Semiconductor MSC23436C

DC Characteristics

(V

CC

= 5V ± 10% , Ta = 0°C t o 70°C )

-60 -70

Parameter Symbol Condition

Min. Max. Min. Max.

Unit Note

Output High Voltage V

OH

IOH = -5.0mA 2.4 V

CC

2.4 V

CC

V

Output Low Voltage V

OL

IOL = 4.2mA 0 0. 4 0 0. 4 V

Input Leakage Current I

LI

0V ≤ VIN ≤ 6.5V;
All other pins not
under test = 0V

-100 100 -100 100

µ

A

Output Leakage Current I

LO

DQ disable
0V ≤ V

OUT

≤ V

CC

-10 10 -10 10

µ

A

Average Power
Supply Current
(Operating)

I

CC1

/RAS, /CAS cycling,
t

RC

= Min.

- 1040 - 950 mA 1, 2

/RAS, /CAS = V

IH

-20-20mA

Power supply current
(Standby)

I

CC2

/RAS, /CAS

≥

V

CC

-0.2V

-10-10mA

1

Average Power
Supply Current
(/RAS only refresh)

I

CC3

/RAS cycling,
/CAS = V

IH

,

t

RC

= Min.

- 1040 - 950 mA 1, 2

Average Power
Supply Current
(/CAS before /RAS refresh)

I

CC6

/RAS cycling,
/CAS before /RAS

- 1040 - 950 mA 1, 2

Average Power
Supply Current
(Fast Page Mode)

I

CC7

/RAS = VIL,
/CAS cycling,
t

PC

= Min.

- 860 - 770 mA 1, 3

Notes: 1. ICC Max. is specified as ICC for output open conditi on.

2. The address can be changed once or less while /RAS = V

IL

.

3. The address can be changed once or less while /CAS = V

IH

.

Semiconductor MSC23436C

AC Characteristics (1/2)

(V

CC

= 5V ± 10% , Ta = 0° C to 70°C ) Note: 1, 2, 3, 9, 10

-60 -70

Parameter Symbol

Min. Max. Min. Max.

Unit Note

Random Read or Write Cycle Time t

RC

110 - 130 - ns

Fast Page Mode Cycle Time t

PC

40 - 45 - ns

Access Time from /RAS t

RAC

- 60 - 70 ns 4, 5, 6

Access Time from /CAS t

CAC

- 15 - 20 ns 4, 5

Access Time from Column Address t

AA

- 30 - 35 ns 4, 6

Access Time from /CAS Precharge t

CPA

- 35 - 40 ns 4

Output Low Im pedance Time f rom / C AS t

CLZ

0-0-ns4

/CAS to Data Output Buffer Turn-off Delay Time t

OFF

0 15 0 20 ns 7

Transition Time t

T

3 50 3 50 ns 3

Refresh Period t

REF

-32-32ms

/RAS Precharge Time t

RP

40 - 50 - ns

/RAS Pulse Width t

RAS

60 10K 70 10K ns

/RAS Pulse Widt h (Fast Page M ode) t

RASP

60 100K 70 100K ns

/RAS Hold Time t

RSH

15 - 20 - ns

/CAS Precharge Time (Fast Page Mode) t

CP

10 - 10 - ns

/CAS Pulse Width t

CAS

15 10K 20 10K ns

/CAS Hold Time t

CSH

60 - 70 - ns

/CAS to /RAS Precharge Time t

CRP

10 - 10 - ns

/RAS Hold Time from /CAS Precharge t

RHCP

35 - 40 - ns

/RAS to /CAS Delay Time t

RCD

20 45 20 50 ns 5

/RAS to Column Address Delay Time t

RAD

15 30 15 35 ns 6

Row Address Set-up Time t

ASR

0-0-ns

Row Address Hold Time t

RAH

10 - 10 - ns

Column Address Set-up Time t

ASC

0-0-ns

Column Address Hold Time t

CAH

15 - 15 - ns

Column Address to /RAS Lead Time t

RAL

30 - 35 - ns

Read Command Set-up Time t

RCS

0-0-ns

Read Command Hold Time t

RCH

0-0-ns8

Read Command Hold Time referenced to /R AS t

RRH

0-0-ns8

Semiconductor MSC23436C

AC Characteristics (2/2)

(V

CC

= 5V ± 10% , Ta = 0° C to 70°C ) Note: 1, 2, 3, 9, 10

-60 -70

Parameter Symbol

Min. Max. Min. Max.

Unit Note

Write Command Set-up Time t

WCS

0-0-ns

Write Command Hold Time t

WCH

10 - 15 - ns

Write Command Pulse W i dt h t

WP

10 - 10 - ns

Write Command to /RAS Lead Time t

RWL

15 - 20 - ns

Write Command to /CAS Lead Time t

CWL

15 - 20 - ns

Data-in Set-up Time t

DS

0-0-ns

Data-in Hold Time t

DH

15 - 15 - ns

/CAS Active Delay Time from /RAS Precharge t

RPC

10 - 10 - ns

/RAS to /CAS Set-up Time (/CAS before /RAS) t

CSR

10 - 10 - ns

/RAS to /CAS Hold Time (/CAS before /RAS) t

CHR

20 - 20 - ns

/WE to /RAS Precharge Time (/CAS before /RAS) t

WRP

10 - 10 - ns

/WE Hold Time from /RAS (/CAS before /RAS) t

WRH

10 - 10 - ns

/RAS to /WE Set-up Time (Test Mode) t

WTS

10 - 10 - ns

/RAS to /WE Hold Time (Test Mode) t

WTH

20 - 20 - ns

Semiconductor MSC23436C

Notes: 1. A start-up delay of 200µs is required after power-up, fol lowed by a minimum of eight ini tializ at ion cycles

(/RAS only r efresh or /CAS before /RAS refresh) befor e pr oper devic e oper ation is achieved.

2. The AC characteristic s assume t

T

= 5ns.

3. V

IH

(Min.) and VIL(Max.) are refer enc e levels for measuring input timing signals. Transition times (tT) are

measured between V

IH

and VIL.

4. This parameter is m easured wit h a load circuit equivalent t o 2TTL loads and 100pF.

5. Operation within the t

RCD

(Max.) limit ensures that t

RAC

(Max.) can be met.

t

RCD

(Max.) is specified as a reference point only. If t

RCD

is greater than the specified t

RCD

(Max.) limit, then

the access tim e is controll ed by t

CAC

.

6. Operation within the t

RAD

(Max.) limit ensures that t

RAC

(Max.) can be met.

t

RAD

(Max.) is specified as a reference point only. If t

RAD

is greater than the specified t

RAD

(Max.) limit, then

the access tim e is controll ed by t

AA

.

7. t

OFF

(Max.) defi ne the t i m e at which the out put achi eves the open circui t c ondit i on and is not ref erenc ed

to output voltage levels.

8. t

RCH

or t

RRH

must be satisfi ed for a read cycle.

9. The test mode is initiated by perf orming a /WE and /CAS before /RAS ref resh cycle. This mode is
latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet
is a 4-bit parallel test f unct ion. CA0 and CA1 are not used. I n a read cycle, if all i nt ernal bi ts are equal,
the D Q p in w ill indica t e a hig h level. If a n y intern al bits are not equal, the DQ pin will indicate a low le vel.
The test mode is cl eared and t he mem ory devic e retur ned to i ts norm al operati ng state by a / RAS onl y
refresh or /CAS before /RAS refresh cycle.

10. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified value.
These parameters should be specifi ed in test m ode cycle by adding the abov e v alue t o the specif ied
value in this data sheet.